NVD2955T4G

NTD2955, NVD2955 MOSFET – Power, P-Channel, DPAK -60 V, -12 A This Power MOSFET is designed to withstand high energy in the avalanche and commutation modes. Designed for low−voltage, high− speed switching applications in power supplies, converters, and power motor controls. These devices are particularly well suited for bridge circuits where diode speed and commutating safe operating areas are critical and offer an additional safety margin against unexpected voltage transients. www.onsemi.com V(BR)DSS RDS(on) TYP ID MAX −60 V 155 mW @ −10 V, 6 A −12 A D Features • to Withstand High Energy in the Avalanche and Commutation Modes NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant Symbol Value Unit Drain−to−Source Voltage VDSS −60 Vdc Gate−to−Source Voltage − Continuous − Non−repetitive (tp ≤ 10 ms) VGS VGSM ± 20 ± 25 Vdc Vpk Drain Current Dr− Continuous @ Ta = 25°C Dr− Single Pulse (tp ≤ 10 ms) ID IDM −12 −18 Adc Apk Total Power Dissipation @ Ta = 25°C PD 55 W Operating and Storage Temperature Range TJ, Tstg −55 to 175 °C EAS 216 mJ Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = 25 Vdc, VGS = 10 Vdc, Peak IL = 12 Apk, L = 3.0 mH, RG = 25 W) Thermal Resistance − Junction−to−Case − Junction−to−Ambient (Note 1) − Junction−to−Ambient (Note 2) Maximum Lead Temperature for Soldering Purposes, 1/8 in. from case for 10 seconds RqJC RqJA RqJA 2.73 71.4 100 °C/W TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. When surface mounted to an FR4 board using 1 in pad size (Cu area = 1.127 in2). 2. When surface mounted to an FR4 board using the minimum recommended pad size (Cu area = 0.412 in2). © Semiconductor Components Industries, LLC, 2017 May, 2019 − Rev. 16 4 4 1 2 MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating S 1 1 3 2 3 IPAK CASE 369D STYLE 2 DPAK CASE 369C STYLE 2 MARKING DIAGRAMS & PIN ASSIGNMENTS 4 Drain 4 Drain AYWW NT 2955G • P−Channel G AYWW NT 2955G • Avalanche Energy Specified • IDSS and VDS(on) Specified at Elevated Temperature • Designed for Low−Voltage, High−Speed Switching Applications and 2 1 3 Drain Gate Source A NT2955/NV2955 NT2955 Y WW G 1 2 3 Gate Drain Source = Assembly Location* = Specific Device Code (DPAK) = Specific Device Code (IPAK) = Year = Work Week = Pb−Free Package * The Assembly Location code (A) is front side optional. In cases where the Assembly Location is stamped in the package, the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. Publication Order Number: NTD2955/D NTD2955, NVD2955 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Characteristic Min Typ Max Unit −60 − − 67 − − − − − − −10 −100 − − −100 −2.0 − −2.8 4.5 −4.0 − − 0.155 0.180 −1.86 − −2.6 −2.0 8.0 − Mhos pF OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 3) (VGS = 0 Vdc, ID = −0.25 mA) (Positive Temperature Coefficient) V(BR)DSS Zero Gate Voltage Drain Current (VGS = 0 Vdc, VDS = −60 Vdc, TJ = 25°C) (VGS = 0 Vdc, VDS = −60 Vdc, TJ = 150°C) IDSS Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc ON CHARACTERISTICS (Note 3) Gate Threshold Voltage (VDS = VGS, ID = −250 mAdc) (Negative Temperature Coefficient) VGS(th) Static Drain−Source On−State Resistance (VGS = −10 Vdc, ID = −6.0 Adc) RDS(on) Drain−to−Source On−Voltage (VGS = −10 Vdc, ID = −12 Adc) (VGS = −10 Vdc, ID = −6.0 Adc, TJ = 150°C) VDS(on) Forward Transconductance (VDS = 10 Vdc, ID = 6.0 Adc) gFS Vdc mV/°C W Vdc DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = −25 Vdc, VGS = 0 Vdc, F = 1.0 MHz) Reverse Transfer Capacitance Ciss − 500 750 Coss − 150 250 Crss − 50 100 td(on) − 10 20 tr − 45 85 td(off) − 26 40 SWITCHING CHARACTERISTICS (Notes 3 and 4) Turn−On Delay Time Rise Time Turn−Off Delay Time (VDD = −30 Vdc, ID = −12 A, VGS = −10 V, RG = 9.1 W) Fall Time Gate Charge (VDS = −48 Vdc, VGS = −10 Vdc, ID = −12 A) tf − 48 90 QT − 15 30 QGS − 4.0 − QGD − 7.0 − − − −1.6 −1.3 −2.5 − trr − 50 ta − 40 − tb − 10 − QRR − 0.10 − ns nC DRAIN−SOURCE DIODE CHARACTERISTICS (Note 3) VSD Diode Forward On−Voltage (IS = 12 Adc, VGS = 0 V) (IS = 12 Adc, VGS = 0 V, TJ = 150°C) Reverse Recovery Time (IS = 12 A, dIS/dt = 100 A/ms ,VGS = 0 V) Reverse Recovery Stored Charge Vdc ns mC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Indicates Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 4. Switching characteristics are independent of operating junction temperature. www.onsemi.com 2 NTD2955, NVD2955 TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted) VGS = -10 V TJ = 25°C -9 V -8 V -9.5 V 20 −ID, DRAIN CURRENT (A) −ID, DRAIN CURRENT (A) 25 -7 V -6.5 V 15 -6 V 10 -5.5 V -5 V 5 0 0 1 2 3 4 5 6 7 8 9 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 24 22 20 25°C 12 10 8 6 4 2 2 4 6 8 3 5 7 9 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) 0.35 TJ = 125°C 0.25 25°C 0.15 -55°C 0.10 0.05 0 0 3 9 18 6 15 12 −ID, DRAIN CURRENT (AMPS) 21 24 RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω) 0.40 0.250 TJ = 25°C 0.225 0.200 VGS = −10 V 0.175 0.150 -15 V 0.125 0.100 0.075 0.050 0 Figure 3. On−Resistance versus Drain Current and Temperature 1000 2.0 1.8 1.6 3 9 18 6 12 15 -ID, DRAIN CURRENT (AMPS) 21 24 Figure 4. On−Resistance versus Drain Current and Gate Voltage VGS = 0 V VGS = −10 V ID = −6 A −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (Ω) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VGS = −10 V 0.20 10 Figure 2. Transfer Characteristics 0.50 0.30 125°C 16 14 Figure 1. On−Region Characteristics 0.45 TJ = -55°C 18 0 10 VDS ≥ −10 V 1.4 1.2 1.0 0.8 0.6 0.4 100 TJ = 125°C 10 100°C 0.2 0 -50 -25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 1 175 5 Figure 5. On−Resistance Variation with Temperature 10 15 20 25 30 35 40 45 50 55 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 6. Drain−To−Source Leakage Current versus Voltage www.onsemi.com 3 60 C, CAPACITANCE (pF) 1000 VDS = 0 V VGS = 0 V TJ = 25°C Ciss 600 Ciss 400 Coss 200 Crss 0 10 5 0 5 -VGS 10 15 20 25 ID = 12 A TJ = 25°C VDS 12.5 Crss 800 15 QT 10 60 50 40 VGS 7.5 30 QGD QGS 5 20 2.5 10 0 0 2 4 6 8 10 12 0 16 14 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1200 −VGS, GATE−TO−SOURCE VOLTAGE (V) NTD2955, NVD2955 QT, TOTAL GATE CHARGE (nC) -VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge Figure 7. Capacitance Variation 15 VDD = −30 V ID = −12 A VGS = −10 V TJ = 25°C −IS, SOURCE CURRENT (AMPS) t, TIME (ns) 1000 100 tf tr td(off) td(on) 10 1 1 10 VGS = 0 V TJ = 25°C 10 5 0 100 RG, GATE RESISTANCE (W) 0 0.5 0.25 1 0.75 1.25 1.5 1.75 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 10. Diode Forward Voltage versus Current Figure 9. Resistive Switching Time Variation versus Gate Resistance ID, DRAIN CURRENT (AMPS) 100 VGS = −15 V SINGLE PULSE TC = 25°C 10 di/dt 100 ms IS 1 ms 0.1 0.1 trr 10 ms 1 dc ta RDS(on) LIMIT THERMAL LIMIT PACKAGE LIMIT 1 tb TIME 0.25 IS tp 10 100 IS −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 12. Diode Reverse Recovery Waveform Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 NTD2955, NVD2955 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1.0 D = 0.5 0.2 0.1 P(pk) 0.1 0.05 0.02 t1 0.01 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 1.0E-05 1.0E-04 1.0E-03 1.0E-02 t, TIME (s) 1.0E-01 RqJC(t) = r(t) RqJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RqJC(t) 1.0E+00 1.0E+01 Figure 13. Thermal Response ORDERING INFORMATION Package Shipping† NTD2955G DPAK (Pb−Free) 75 Units / Rail NTD2955−1G IPAK (Pb−Free) 75 Units / Rail NTD2955T4G DPAK (Pb−Free) 2500 / Tape & Reel NVD2955T4G* DPAK (Pb−Free) 2500 / Tape & Reel SVD2955T4G* DPAK (Pb−Free) 2500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. *NVD and SVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable. www.onsemi.com 5 NTD2955, NVD2955 PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE F A E b3 c2 4 L3 Z D 1 L4 C A B 2 NOTE 7 c SIDE VIEW b TOP VIEW H DETAIL A 3 b2 e 0.005 (0.13) M GAUGE PLANE C Z C L L1 DETAIL A DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z BOTTOM VIEW H L2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. 7. OPTIONAL MOLD FEATURE. Z SEATING PLANE BOTTOM VIEW A1 ALTERNATE CONSTRUCTIONS STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN ROTATED 905 CW SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 3.00 0.118 1.60 0.063 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 6 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.028 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.114 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.72 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.90 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− NTD2955, NVD2955 PACKAGE DIMENSIONS IPAK CASE 369D ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. 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