NTD4804N, NVD4804N
MOSFET – Power, Single,
N-Channel, DPAK/IPAK
30 V, 117 A
Features
www.onsemi.com
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
AEC Q101 Qualified − NVD4804N
These Devices are Pb−Free and are RoHS Compliant
RDS(on) MAX
V(BR)DSS
4.0 mW @ 10 V
30 V
D
• CPU Power Delivery
• DC−DC Converters
• Low Side Switching
N−Channel
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
"20
V
ID
19.6
A
Continuous Drain
Current (RqJA) (Note 1)
TA = 25°C
Power Dissipation
(RqJA) (Note 1)
TA = 25°C
PD
2.66
W
Continuous Drain
Current (RqJA) (Note 2)
TA = 25°C
ID
14.5
A
TA = 85°C
Steady
State
15.2
TA = 85°C
TA = 25°C
PD
1.43
W
Continuous Drain
Current (RqJC)
(Note 1)
TC = 25°C
ID
124
A
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
PD
107
W
TA = 25°C
IDM
230
A
TA = 25°C
IDmaxPkg
45
A
TJ, Tstg
−55 to
175
°C
IS
78
A
tp=10ms
Current Limited by Package
Operating Junction and Storage Temperature
Source Current (Body Diode)
96
Drain to Source dV/dt
dV/dt
6.0
V/ns
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 24 V, VGS = 10 V,
L = 1.0 mH, IL(pk) = 30 A, RG = 25 W)
EAS
450
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
© Semiconductor Components Industries, LLC, 2016
May, 2019 − Rev. 10
4
4
1 2
11
TC = 85°C
S
1
1
3
CASE 369AA
DPAK
(Bent Lead)
STYLE 2
2
3
CASE 369AD
CASE 369D
3 IPAK
IPAK
(Straight Lead) (Straight Lead
DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENTS
4
Drain
4
Drain
AYWW
48
04NG
Value
AYWW
48
04NG
Symbol
Parameter
Pulsed Drain Current
117 A
5.5 mW @ 4.5 V
Applications
Power Dissipation
(RqJA) (Note 2)
ID MAX
4
Drain
AYWW
48
04NG
•
•
•
•
•
2
1 2 3
1 Drain 3
Gate Source Gate Drain Source 1 2 3
Gate Drain Source
A
= Assembly Location
Y
= Year
WW
= Work Week
4804N = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
Publication Order Number:
NTD4804N/D
NTD4804N, NVD4804N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case (Drain)
Parameter
RqJC
1.4
°C/W
Junction−to−TAB (Drain)
RqJC−TAB
3.5
Junction−to−Ambient − Steady State (Note 1)
RqJA
56.4
Junction−to−Ambient − Steady State (Note 2)
RqJA
105
1. Surface−mounted on FR4 board using 1 in sq pad size, 1 oz Cu.
2. Surface−mounted on FR4 board using the minimum recommended pad size.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
26
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = "20 V
VGS(TH)
VGS = VDS, ID = 250 mA
"100
mA
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
gFS
2.5
7.6
VGS = 10 to 11.5 V
VGS = 4.5 V
Forward Transconductance
1.5
ID = 30 A
3.4
ID = 15 A
3.4
ID = 30 A
4.7
ID = 15 A
4.6
VDS = 15 V, ID = 15 A
V
mV/°C
4.0
mW
5.5
23
S
4490
pF
CHARGES AND CAPACITANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
VGS = 0 V, f = 1.0 MHz,
VDS = 12 V
952
556
30
VGS = 4.5 V, VDS = 15 V,
ID = 30 A
40
nC
5.5
13
13
VGS = 11.5 V, VDS = 15 V,
ID = 30 A
73
nC
18
ns
SWITCHING CHARACTERISTICS (Note 4)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
20
24
tf
8
td(on)
10
tr
td(off)
VGS = 11.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
19
35
5
3. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
4. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
ns
NTD4804N, NVD4804N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
TJ = 25°C
0.81
1.2
V
TJ = 125°C
0.72
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Time
VGS = 0 V,
IS = 30 A
34
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 30 A
ns
19
15
QRR
30
nC
Source Inductance
LS
2.49
nH
Drain Inductance, DPAK
LD
0.0164
Drain Inductance, IPAK
LD
Gate Inductance
LG
3.46
Gate Resistance
RG
0.6
PACKAGE PARASITIC VALUES
TA = 25°C
1.88
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
3
NTD4804N, NVD4804N
TYPICAL PERFORMANCE CURVES
240
TJ = 25°C
ID, DRAIN CURRENT (AMPS)
200
4.5 V
160
4V
120
80
3.6 V
40
3.2 V
0
1
2
5
4
3
TJ = 125°C
TJ = 25°C
40
TJ = −55°C
0
1
2
4
3
5
6
7
Figure 2. Transfer Characteristics
ID = 30 A
TJ = 25°C
0.01
TJ = 25°C
0.0075
0.007
0.006
0.005
VGS = 4.5 V
0.005
VGS = 11.5 V
0.0025
0.004
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
80
Figure 1. On−Region Characteristics
0.008
2
4
8
6
10
0
10
20
30
40
50
60
70
80
90 100
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPS)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.7
1.5
120
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
0.009
1.6
160
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
0.010
0.003
VDS ≥ 10 V
200
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
10 V
6V
100,000
VGS = 0 V
ID = 30 A
VGS = 10 V
IDSS, LEAKAGE (nA)
ID, DRAIN CURRENT (AMPS)
240
1.4
TJ = 175°C
10,000
1.3
1.2
1.1
1.0
1000
TJ = 125°C
0.9
0.8
0.7
−50 −25
0
25
50
75
100
125
150
175
100
0
5
10
15
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Drain Voltage
www.onsemi.com
4
20
NTD4804N, NVD4804N
6000
VGS , GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES
TJ = 25°C
Ciss
C, CAPACITANCE (pF)
5000
4000
Ciss
3000
Crss
2000
Coss
1000
0
15
VDS = 0 V
VGS = 0 V
5
5
0
VGS
VDS
10
Crss
10
15
20
25
30
5
QT
4
2
1
0
IS, SOURCE CURRENT (AMPS)
t, TIME (ns)
tr
td(off)
tf
1
td(on)
1
0
10
RG, GATE RESISTANCE (OHMS)
15
10
5
1 ms
10 ms
dc
10
1
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
100
EAS, SINGLE PULSE DRAIN−TO−SOURCE
AVALANCHE ENERGY (mJ)
I D, DRAIN CURRENT (AMPS)
100 ms
0.1
0.2
0.4
0.6
1.0
0.8
Figure 10. Diode Forward Voltage vs. Current
100
1
TJ = 25°C
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
10 ms
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
30
20
0
0
100
1000
10
20
15
25
10
QG, TOTAL GATE CHARGE (nC)
VGS = 0 V
25
Figure 9. Resistive Switching Time
Variation vs. Gate Resistance
VGS = 20 V
SINGLE PULSE
TC = 25°C
5
30
VDD = 15 V
ID = 30 A
VGS = 11.5 V
10
ID = 30 A
TJ = 25°C
Figure 8. Gate−To−Source and Drain−To−Source
Voltage vs. Total Charge
Figure 7. Capacitance Variation
100
Q2
3
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1000
Q1
500
ID = 30 A
400
300
200
100
0
25
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
50
75
100
125
150
TJ, JUNCTION TEMPERATURE (°C)
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
www.onsemi.com
5
175
NTD4804N, NVD4804N
TYPICAL PERFORMANCE CURVES
I D, DRAIN CURRENT (AMPS)
100
100°C
125°C
25°C
10
1
1
100
10
PULSE WIDTH (ms)
1000
r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE
(NORMALIZED)
Figure 13. Avalanche Characteristics
1.0
D = 0.5
0.2
0.1
0.1
0.05
P(pk)
0.02
0.01
SINGLE PULSE
0.01
1.0E-05
1.0E-04
t1
t2
DUTY CYCLE, D = t1/t2
1.0E-03
1.0E-02
t, TIME (ms)
RqJC(t) = r(t) RqJC
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) − TC = P(pk) RqJC(t)
1.0E-01
1.0E+00
1.0E+01
Figure 14. Thermal Response
ORDERING INFORMATION
Package
Shipping†
NTD4804NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NTD4804N−35G
IPAK Trimmed Lead
(3.5 " 0.15 mm)
(Pb−Free)
75 Units / Rail
NVD4804NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NVD4804NT4G−VF01
DPAK
(Pb−Free)
2500 / Tape & Reel
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
IPAK
CASE 369D−01
ISSUE C
SCALE 1:1
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
DATE 15 DEC 2010
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
T
MARKING
DIAGRAMS
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
Discrete
YWW
xxxxxxxx
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
xxxxxxxxx
A
lL
Y
WW
DOCUMENT NUMBER:
DESCRIPTION:
98AON10528D
Integrated
Circuits
xxxxx
ALYWW
x
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
IPAK (DPAK INSERTION MOUNT)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA−01
ISSUE B
4
1 2
DATE 03 JUN 2010
3
SCALE 1:1
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
2
b2
H
DETAIL A
3
c
b
0.005 (0.13)
e
M
H
C
L2
GAUGE
PLANE
C
L
L1
DETAIL A
A1
ROTATED 905 CW
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
SOLDERING FOOTPRINT*
6.20
0.244
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
GENERIC
MARKING DIAGRAM*
XXXXXXG
ALYWW
YWW
XXX
XXXXXG
IC
Discrete
XXXXXX
A
L
Y
WW
G
6.17
0.243
SCALE 3:1
SEATING
PLANE
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13126D
DPAK (SINGLE GAUGE)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
3.5 MM IPAK, STRAIGHT LEAD
CASE 369AD
ISSUE B
DATE 18 APR 2013
SCALE 1:1
E
E3
L2
E2
A1
D2
D
L1
L
T
SEATING
PLANE
NOTES:
1.. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2.. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION b APPLIES TO PLATED TERMINAL
AND IS MEASURED BETWEEN 0.15 AND
0.30mm FROM TERMINAL TIP.
4. DIMENSIONS D AND E DO NOT INCLUDE
MOLD GATE OR MOLD FLASH.
A
A1
b1
2X
e
A2
3X
E2
b
0.13
M
T
D2
DIM
A
A1
A2
b
b1
D
D2
E
E2
E3
e
L
L1
L2
MILLIMETERS
MIN
MAX
2.19
2.38
0.46
0.60
0.87
1.10
0.69
0.89
0.77
1.10
5.97
6.22
4.80
−−−
6.35
6.73
4.57
5.45
4.45
5.46
2.28 BSC
3.40
3.60
−−−
2.10
0.89
1.27
GENERIC MARKING
DIAGRAMS*
OPTIONAL
CONSTRUCTION
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
Discrete
AYWW
XXX
XXXXXG
XXXXXX
A
L
Y
WW
G
Integrated
Circuits
XXXXXXG
ALYWW
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
DOCUMENT NUMBER:
DESCRIPTION:
98AON23319D
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
3.5 MM IPAK, STRAIGHT LEAD
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ON Semiconductor and
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