NVD5803N
Power MOSFET
40 V, 85 A, Single N−Channel, DPAK
Features
•
•
•
•
•
Low RDS(on)
High Current Capability
Avalanche Energy Specified
AEC−Q101 Qualified
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
V(BR)DSS
RDS(on) MAX
ID MAX
40 V
5.7 mW @ 10 V
85 A
Applications
• DC Motor Drive
• Reverse Battery Protection
• Glow Plug
D
G
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage − Continuous
VGS
"20
V
ID
85
A
Continuous Drain
Current (RqJC)
(Note 1)
TC = 25°C
Steady
State
Power Dissipation
(RqJC) (Note 1)
Pulsed Drain Current
TC = 100°C
TC = 25°C
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 40 A, L = 0.3 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
S
N−CHANNEL MOSFET
4
61
1 2
PD
83
W
3
IDM
228
A
TJ, Tstg
−55 to
175
°C
DPAK
CASE 369AA
(Surface Mount)
STYLE 2
IS
85
A
EAS
240
mJ
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
TL
°C
260
AYWW
V58
03NG
Parameter
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
2
1 Drain 3
Gate Source
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case (Drain)
RqJC
1.8
°C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
42
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces.
A
Y
WW
5803N
G
= Assembly Location*
= Year
= Work Week
= Device Code
= Pb−Free Package
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2016
August, 2016 − Rev. 2
1
Publication Order Number:
NVD5803N/D
NVD5803N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
40
IDSS
Gate−to−Source Leakage Current
V
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25°C
1.0
TJ = 150°C
100
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
3.5
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
1.5
−7.4
RDS(on)
gFS
mV/°C
VGS = 10 V, ID = 50 A
4.9
5.7
mW
VGS = 5.0 V, ID = 30 A
6.7
VDS = 15 V, ID = 15 A
13.6
S
3220
pF
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Ciss
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
270
Total Gate Charge
QG(TOT)
51
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
12.7
td(on)
12.6
VGS = 10 V, VDS = 20 V,
ID = 50 A
390
nC
3.8
12.7
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
tr
Turn−Off Delay Time
Fall Time
td(off)
VGS = 10 V, VDD = 32 V,
ID = 50 A, RG = 2.0 W
tf
ns
21.4
28.3
6.6
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 30 A
TJ = 25°C
0.88
TJ = 150°C
0.73
tRR
ta
tb
1.2
27.2
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 30 A
QRR
V
ns
14
13.2
17
nC
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Package
Shipping†
NVD5803NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
SVD5803NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
2
NVD5803N
TYPICAL CHARACTERISTICS
160
160
140
4.8 V
100
4.6 V
80
4.4 V
60
4.2 V
40
4.0 V
20
2
3
4
100
80
60
TJ = 25°C
40
TJ = 125°C
TJ = −55°C
0
5
2
3
4
5
6
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
0.010
ID = 50 A
TJ = 25°C
0.008
0.006
0.004
2
4
6
8
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.008
TJ = 25°C
0.007
VGS = 5 V
0.006
VGS = 10 V
0.005
0.004
5
20
35
50
65
80
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
100000
1.8
1.7
ID = 50 A
1.6
VGS = 10 V
VGS = 0 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
1
120
20
3.8 V
3.6 V
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
ID, DRAIN CURRENT (A)
VGS = 5 V
120
0
VDS ≥ 10 V
140
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
TJ = 25°C
10 V
1.5
1.4
1.3
1.2
1.1
1.0
10000
TJ = 150°C
TJ = 125°C
1000
0.9
0.8
0.7
−55 −35 −15
5
25
45
65
100
85 105 125 145 165
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
3
40
NVD5803N
TYPICAL CHARACTERISTICS
Ciss
C, CAPACITANCE (pF)
3500
VGS, GATE−TO−SOURCE VOLTAGE (V)
15
VGS = 0 V
TJ = 25°C
2500
2000
1500
1000
Coss
500
Crss
0
0
10
20
30
9
6
Qgs
12
Qgd
3
6
0
0
5
10
15
25
20
30
35
45
40
50
0
55
DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
80
VGS = 0 V
TJ = 25°C
IS, SOURCE CURRENT (A)
70
100
t, TIME (ns)
18
VGS
VDS
40
VDD = 32 V
ID = 85 A
VGS = 10 V
td(off)
tr
td(on)
10
tf
1
1
10
100
60
50
40
30
20
10
0
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.1
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
250
VGS = 10 V
Single Pulse
TC = 25°C
100
10 ms
100 ms
10
1 ms
10 ms
dc
RDS(on) Limit
Thermal Limit
Package Limit
0.1
0.1
1
10
EAS, SINGLE PULSE DRAIN−TO−
SOURCE AVALANCHE ENERGY (mJ)
ID, DRAIN CURRENT (A)
24
QT
1000
1
TJ = 25°C
12
3000
30
ID = 50 A
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
4000
100
ID = 85 A
200
150
100
50
0
25
50
75
100
125
150
VDS, DRAISN VOLTAGE (V)
TJ, STARTING JUNCTION TEMPERATURE (°C)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Avalanche Energy vs.
Starting Junction Temperature
www.onsemi.com
4
175
NVD5803N
RqJC(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
TYPICAL CHARACTERISTICS
10
1
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
0.01
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
PULSE TIME (sec)
Figure 13. Thermal Response
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5
0.1
1
10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA−01
ISSUE B
4
1 2
DATE 03 JUN 2010
3
SCALE 1:1
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
2
b2
H
DETAIL A
3
c
b
0.005 (0.13)
e
M
H
C
L2
GAUGE
PLANE
C
L
L1
DETAIL A
A1
ROTATED 905 CW
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
SOLDERING FOOTPRINT*
6.20
0.244
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
GENERIC
MARKING DIAGRAM*
XXXXXXG
ALYWW
YWW
XXX
XXXXXG
IC
Discrete
XXXXXX
A
L
Y
WW
G
6.17
0.243
SCALE 3:1
SEATING
PLANE
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13126D
DPAK (SINGLE GAUGE)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
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