NTD5805N, NVD5805N
Power MOSFET
40 V, 51 A, Single N−Channel, DPAK
Features
•
•
•
•
•
Low RDS(on)
High Current Capability
Avalanche Energy Specified
NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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RDS(on) MAX
V(BR)DSS
16 mW @ 5.0 V
40 V
51 A
9.5 mW @ 10 V
D
Applications
•
•
•
•
ID MAX
LED Backlight Driver
CCFL Backlight
DC Motor Control
Power Supply Secondary Side Synchronous Rectification
N−Channel
G
S
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
4
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage − Continuous
VGS
±20
V
3
Gate−to−Source Voltage
− Non−Repetitive (tp < 10 mS)
VGS
±30
V
ID
51
A
DPAK
CASE 369C
(Surface Mount)
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
Continuous Drain
Current (RqJC)
(Note 1)
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
Steady
State
Pulsed Drain Current
TC = 100°C
TC = 25°C
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 40 A, L = 0.1 mH, VDS = 40 V)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
36
PD
47
W
IDM
85
A
TJ, Tstg
−55 to
175
°C
IS
30
A
EAS
80
mJ
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
°C/W
Junction−to−Case (Drain)
RqJC
3.2
Junction−to−Ambient − Steady State (Note 1)
RqJA
107
1 2
4
Drain
AYWW
58
05NG
Parameter
2
1 Drain 3
Gate Source
A
Y
WW
5805N
G
= Assembly Location*
= Year
= Work Week
= Device Code
= Pb−Free Package
* The Assembly Location Code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package bottom (molding ejecter
pin), the front side assembly code may be blank.
1. Surface−mounted on FR4 board using the minimum recommended pad size.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
April, 2017 − Rev. 6
1
Publication Order Number:
NTD5805N/D
NTD5805N, NVD5805N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
40.8
IDSS
Gate−to−Source Leakage Current
V
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25°C
1.0
TJ = 150°C
100
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
3.5
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
1.5
7.04
RDS(on)
gFS
mV/°C
VGS = 10 V, ID = 15 A
7.6
9.5
mW
VGS = 5.0 V, ID = 10 A
10.9
16
VDS = 15 V, ID = 15 A
8.54
S
1725
pF
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
220
160
Total Gate Charge
QG(TOT)
33
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
9.8
td(on)
10.2
VGS = 10 V, VDS = 32 V,
ID = 30 A
80
nC
2.0
7.2
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = 10 V, VDD = 32 V,
ID = 30 A, RG = 2.5 W
tf
ns
17.9
22.9
4.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 10 A
TJ = 25°C
0.83
TJ = 150°C
0.65
tRR
ta
tb
24.8
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 30 A
QRR
1.2
V
ns
14.6
10.2
15.5
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
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2
NTD5805N, NVD5805N
TYPICAL PERFORMANCE CHARACTERISTICS
5.0 V
70
VGS = 7 V − 5.5 V
60
50
40
4.5 V
30
4.0 V
20
10
3.5 V
0
0.5
1
1.5
2
2.5
50
TJ = 100°C
25
TJ = 25°C
TJ = −55°C
2
4
5
6
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 30 A
TJ = 25°C
0.019
0.017
0.015
0.013
0.011
0.009
4
5
6
7
9
8
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.05
TJ = 25°C
0.04
0.03
VGS = 5 V
0.02
0.01
VGS = 10 V
0
10
15
20
25
30
35
40
45
50
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
1.9
1.8
1.7
1.6
3
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.021
0.007
75
0
3
VGS = 0 V
ID = 51 A
VGS = 10 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
VDS ≥ 10 V
5.2 V
80 TJ = 25°C
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
100
10 V
90
ID, DRAIN CURRENT (A)
100
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50 −25
0
25
50
75
100
125
150
100
10
175
TJ = 150°C
1000
TJ = 100°C
2
12
22
32
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
42
NTD5805N, NVD5805N
TYPICAL PERFORMANCE CHARACTERISTICS
Ciss
2000
20
40
15
30
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
VGS = 0 V
TJ = 25°C
VDS
QT
10
1000
Coss
0
10
5
Vgs
Crss
0
5
10
Vds
15
20
25
30
35
40
Qgs
Qgd
10
ID = 30 A
TJ = 25°C
10
0
30
0
40
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 7. Capacitance Variation
1000
IS, SOURCE CURRENT (A)
30
VDD = 32 V
ID = 30 A
VGS = 10 V
td(off)
tf
tr
100
td(on)
10
1
10
VGS = 0 V
TJ = 25°C
20
10
0
100
0.4
0.6
0.5
0.7
0.8
0.9
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
ID, DRAIN CURRENT (A)
t, TIME (ns)
20
Qg, TOTAL GATE CHARGE (nC)
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
1
20
VGS
5
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
3000
100
10 ms
100 ms
10
1
0.1
0.1
VGS = 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
1 ms
10 ms
dc
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
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4
100
1.0
NTD5805N, NVD5805N
r(t), Effective Transient Thermal Resistance
(°C/W)
TYPICAL PERFORMANCE CHARACTERISTICS
10
D = 0.5
1
0.2
0.1
0.05
0.1
0.02
0.01
Single Pulse
0.01
0.00001
0.0001
0.001
0.01
0.1
1
t, PULSE TIME (s)
Figure 12. Thermal Response
ORDERING INFORMATION
Package
Shipping†
NTD5805NT4G
DPAK
(Pb−Free)
2500 / Tape & Reel
NVD5805NT4G*
DPAK
(Pb−Free)
2500 / Tape & Reel
NVD5805NT4G−VF01
DPAK
(Pb−Free)
2500 / Tape & Reel
Order Number
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
www.onsemi.com
5
NTD5805N, NVD5805N
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
A
E
b3
c2
4
L3
Z
D
1
L4
C
A
B
2
NOTE 7
c
SIDE VIEW
b
TOP VIEW
H
DETAIL A
3
b2
e
0.005 (0.13)
M
GAUGE
PLANE
C
Z
C
L
L1
DETAIL A
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
BOTTOM VIEW
H
L2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
Z
SEATING
PLANE
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
ROTATED 905 CW
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
6.17
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTD5805N/D