NVD5807NT4G-VF01

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NTD5807N, NVD5807N Power MOSFET 40 V, 23 A, Single N−Channel, DPAK/IPAK Features Low RDS(on) High Current Capability Avalanche Energy Specified AEC−Q101 Qualified and PPAP Capable − NVD5807N These Devices are Pb−Free and are RoHS Compliant www.onsemi.com 40 V Applications CCFL Backlight DC Motor Control Class D Amplifier Power Supply Secondary Side Synchronous Rectification Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage − Continuous VGS "20 V Gate−to−Source Voltage − Non−Repetitive (tp < 10 mS) VGS "30 V ID 23 A Power Dissipation (RqJC) (Note 1) TC = 25°C Steady State Pulsed Drain Current TC = 100°C TC = 25°C tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (VDD = 50 V, VGS = 10 V, RG = 25 W, IL(pk) = 14 A, L = 0.3 mH, VDS = 40 V) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 16 23 A S N−CHANNEL MOSFET 4 4 1 2 3 DPAK CASE 369AA (Surface Mount) STYLE 2 1 2 3 IPAK CASE 369D (Straight Lead DPAK) PD 33 W IDM 45 A TJ, Tstg −55 to 175 °C MARKING DIAGRAMS & PIN ASSIGNMENT IS 23 A EAS 29.4 mJ 4 Drain TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter 31 mW @ 10 V G Symbol Continuous Drain Current (RqJC) (Note 1) 16 A D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter ID MAX Symbol Value Unit Junction−to−Case (Drain) RqJC 4.5 °C/W Junction−to−Ambient − Steady State (Note 1) RqJA 107 1. Surface−mounted on FR4 board using the minimum recommended pad size. 4 Drain AYWW 58 07NG • • • • RDS(on) MAX 37 mW @ 4.5 V V(BR)DSS AYWW 58 07NG • • • • • 2 1 Drain 3 Gate Source A Y WW 5807N G 1 2 3 Gate Drain Source = Assembly Location* = Year = Work Week = Device Code = Pb−Free Package * The Assembly Location Code (A) is front side optional. In cases where the Assembly Location is stamped in the package bottom (molding ejecter pin), the front side assembly code may be blank. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2014 April, 2017 − Rev. 6 1 Publication Order Number: NTD5807N/D NTD5807N, NVD5807N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current 38 IDSS Gate−to−Source Leakage Current V VGS = 0 V, VDS = 40 V mV/°C TJ = 25°C 1.0 TJ = 150°C 100 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.5 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance 1.4 −5.8 RDS(on) gFS mV/°C VGS = 10 V, ID = 5.0 A 20 31 mW VGS = 4.5 V, ID = 4.0 A 29 37 VDS = 10 V, ID = 15 A 8.1 S 603 pF CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VGS = 0 V, f = 1.0 MHz, VDS = 25 V 96 73 Total Gate Charge QG(TOT) 12.6 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 3.1 td(on) 11.2 VGS = 10 V, VDS = 20 V, ID = 5.0 A 20 nC 0.76 2.2 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(off) VGS = 4.5 V, VDD = 20 V, ID = 30 A, RG = 2.5 W 111 11.2 tf 3.2 td(on) 6.7 tr td(off) VGS = 10 V, VDD = 20 V, ID = 30 A, RG = 2.5 W tf ns ns 20.4 15.6 2.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.91 TJ = 150°C 0.76 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 10 A 15.7 VGS = 0 V, dIs/dt = 100 A/ms, IS = 30 A QRR www.onsemi.com 2 V ns 10.75 5.0 6.1 2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. 1.2 nC NTD5807N, NVD5807N TYPICAL PERFORMANCE CHARACTERISTICS 45 10 V 4.2 V 25 4.0 V 20 3.8 V 15 3.4 V 10 3.0 V 0 1 2 3 4 5 6 30 TJ = 25°C 20 TJ = 150°C 10 TJ = −55°C 2 3 4 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.025 VGS = 10 V 0.023 0.021 TJ = 25°C 0.019 0.017 0.015 40 0 5 10 15 20 25 ID, DRAIN CURRENT (A) 0.040 0.038 0.036 0.034 0.032 VGS = 4.5 V 0.030 0.028 0.026 0.024 0.022 0.020 0.018 0.016 VGS = 10 V 5 1.6 VGS = 10 V 15 20 25 30 35 40 45 ID, DRAIN CURRENT (A) 10,000 ID = 5 A 10 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.8 1.7 6 TJ = 25°C Figure 3. On−Resistance vs. Drain Current VGS = 0 V TJ = 150°C 1,000 1.5 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 30 5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) VDS ≥ 10 V 4.5 V 35 0 50 TJ = 25°C VGS = 5 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 40 1.4 1.3 1.2 1.1 1.0 100 10 TJ = 25°C 1.0 0.9 0.8 0.7 −50 −25 0 25 50 75 100 125 150 0.1 175 2 12 22 32 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 42 NTD5807N, NVD5807N TYPICAL PERFORMANCE CHARACTERISTICS TJ = 25°C 1000 Ciss 750 500 Crss Coss 250 10 5 Vgs 0 5 10 Vds 15 20 25 30 35 40 VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 1250 0 24 12 VGS = 0 V QT 9 12 3 0 Qgd Qgs 1 10 0 2 6 4 8 10 12 14 0 Qg, TOTAL GATE CHARGE (nC) Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge IS, SOURCE CURRENT (A) t, TIME (ns) 6 TJ = 25°C VGS = 0 V tf 10 5 0 100 TJ = 25°C 15 0.4 0.6 0.8 1.0 1.2 1.4 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 ID, DRAIN CURRENT (A) 1 ID = 5 A 20 td(on) td(off) tr 10 VGS 6 Figure 7. Capacitance Variation VDD = 32 V ID = 30 A VGS = 10 V 18 VDS GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V) 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1500 100 10 ms 10 1 0.1 0.1 100 ms VGS = 10 V Single Pulse TC = 25°C RDS(on) Limit Thermal Limit Package Limit 1 ms 10 ms dc 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 4 100 NTD5807N, NVD5807N r(t), Effective Transient Thermal Resistance (°C/W) TYPICAL PERFORMANCE CHARACTERISTICS 10 D = 0.5 1 0.2 0.1 0.05 0.02 0.01 Single Pulse 0.1 0.00001 0.0001 0.001 0.01 0.1 1 t, PULSE TIME (s) Figure 12. Thermal Response ORDERING INFORMATION Package Shipping† IPAK (Straight Lead DPAK) (Pb−Free) 75 Units / Rail NTD5807NT4G DPAK (Pb−Free) 2500 / Tape & Reel NVD5807NT4G DPAK (Pb−Free) 2500 / Tape & Reel NVD5807NT4G−VF01 DPAK (Pb−Free) 2500 / Tape & Reel Order Number NTD5807NG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NTD5807N, NVD5807N PACKAGE DIMENSIONS DPAK (SINGLE GUAGE) CASE 369AA−01 ISSUE B A E b3 c2 B Z D 1 L4 A 4 L3 b2 e 2 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: INCHES. 3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.006 INCHES PER SIDE. 5. DIMENSIONS D AND E ARE DETERMINED AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY. 6. DATUMS A AND B ARE DETERMINED AT DATUM PLANE H. C H DETAIL A 3 DIM A A1 b b2 b3 c c2 D E e H L L1 L2 L3 L4 Z c b 0.005 (0.13) M H C L2 GAUGE PLANE C L SEATING PLANE A1 L1 DETAIL A ROTATED 905 CW SOLDERING FOOTPRINT* 6.20 0.244 2.58 0.102 5.80 0.228 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN 3.00 0.118 1.60 0.063 INCHES MIN MAX 0.086 0.094 0.000 0.005 0.025 0.035 0.030 0.045 0.180 0.215 0.018 0.024 0.018 0.024 0.235 0.245 0.250 0.265 0.090 BSC 0.370 0.410 0.055 0.070 0.108 REF 0.020 BSC 0.035 0.050 −−− 0.040 0.155 −−− 6.17 0.243 SCALE 3:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. www.onsemi.com 6 MILLIMETERS MIN MAX 2.18 2.38 0.00 0.13 0.63 0.89 0.76 1.14 4.57 5.46 0.46 0.61 0.46 0.61 5.97 6.22 6.35 6.73 2.29 BSC 9.40 10.41 1.40 1.78 2.74 REF 0.51 BSC 0.89 1.27 −−− 1.01 3.93 −−− NTD5807N, NVD5807N PACKAGE DIMENSIONS IPAK CASE 369D−01 ISSUE C C B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. E R 4 Z A S 1 2 3 −T− SEATING PLANE K J F D G H 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 −−− MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 −−− STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN T ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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