NVD5C478NL
MOSFET – Power, Single,
N-Channel
40 V, 7.7 mW, 45 A
Features
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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RDS(on)
V(BR)DSS
ID
7.7 m @ 10 V
40 V
11.8 m @ 4.5 V
45 A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain Current RJC (Notes 1 & 3)
Power Dissipation RJC
(Note 1)
Continuous Drain
Current RJA
(Notes 1, 2 & 3)
TC = 25°C
Steady
State
Pulsed Drain Current
Value
Unit
VDSS
40
V
VGS
"20
V
ID
45
A
TC = 100°C
TC = 25°C
Steady
State
PD
ID
Operating Junction and Storage Temperature
Source Current (Body Diode)
A
14
PD
W
3.0
1.5
IDM
220
A
TJ, Tstg
−55 to
175
°C
IS
25
A
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, IL(pk) = 3.4 A)
EAS
98
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case (Drain) (Note 1)
RJC
5.0
°C/W
Junction−to−Ambient − Steady State (Note 2)
RJA
50
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2017
June, 2019 − Rev. 0
S
N−CHANNEL MOSFET
4
9.9
TA = 100°C
TA = 25°C, tp = 10 s
G
W
30
15
TA = 100°C
TA = 25°C
D
32
TC = 100°C
TA = 25°C
Power Dissipation RJA
(Notes 1 & 2)
Symbol
1
1 2
3
DPAK
CASE 369C
STYLE 2
MARKING DIAGRAM
& PIN ASSIGNMENT
4
Drain
AYWW
5C
478NLG
Parameter
2
1 Drain 3
Gate Source
A
= Assembly Location
Y
= Year
WW
= Work Week
5C478NL = Device Code
G
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
Publication Order Number:
NVD5C478NL/D
NVD5C478NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 A
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
19
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25°C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 30 A
A
100
nA
2.2
V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
VGS(TH)/TJ
1.2
4.8
mV/°C
Drain−to−Source On Resistance
RDS(on)
VGS = 4.5 V, ID = 15 A
9.4
11.8
m
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 15 A
6.4
7.7
m
gFS
VDS = 3 V, ID = 15 A
45
S
1100
pF
Forward Transconductance
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
410
VGS = 4.5 V, VDS = 32 V,
ID = 15 A
9.5
nC
nC
25
Total Gate Charge
QG(TOT)
Total Gate Charge
QG(TOT)
20
Threshold Gate Charge
QG(TH)
2.1
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
3.1
V
td(on)
7.0
ns
tr
16
VGS = 10 V, VDS = 32 V,
ID = 15 A
3.6
3.3
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(off)
VGS = 10 V, VDS = 32 V,
ID = 15 A, RG = 2.5
tf
21
3.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
VGS = 0 V,
IS = 15 A
TJ = 25°C
0.88
TJ = 125°C
0.73
tRR
29
Charge Time
ta
13
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, dIs/dt = 100 A/s,
IS = 15 A
QRR
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2
V
ns
15
20
4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
1.2
nC
NVD5C478NL
TYPICAL CHARACTERISTICS
70
70
4.0 V
40
30
3.2 V
20
10
40
30
0
1
2
0
3
TJ = 125°C
1
0
2
TJ = −55°C
3
4
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 15 A
TJ = 25°C
15
10
5
3
TJ = 25°C
20
10
20
0
50
2.8 V
4
5
6
7
8
9
10
20
TJ = 25°C
15
VGS = 4.5 V
10
VGS = 10 V
5
0
5
7
6
10
9
8
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
100K
ID = 15 A
VGS = 10 V
1.5
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (m)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
ID, DRAIN CURRENT (A)
3.6 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (m)
ID, DRAIN CURRENT (A)
VGS = 10 V to 4.5 V
50
0
VDS = 3 V
60
60
1.0
0.5
10K
TJ = 175°C
1K
TJ = 125°C
100
TJ = 85°C
TJ = 150°C
10
1
TJ = 25°C
0.1
0
−50 −25
0
25
50
75
100
125
150
0.01
175
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NVD5C478NL
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
C, CAPACITANCE (pF)
10K
Ciss
1K
Coss
100
TJ = 25°C
VGS = 0 V
f = 1 MHz
10
0
5
Crss
10
15
20
25
30
35
40
10
9
8
7
6
5
Qgs
4
Qgd
3
VDS = 32 V
ID = 15 A
TJ = 25°C
2
1
0
0
2
4
6
8
10
12
14
16
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1K
20
18
100
td(off)
tf
tr
t, TIME (ns)
100
10
td(on)
1
VGS = 10 V
VDS = 32 V
ID = 25 A
0.1
IS, SOURCE CURRENT (A)
VGS = 0 V
1
TJ = 125°C
0.3
0.4
0.7
0.8
0.9
1.0
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
TJ(initial) = 25°C
10 s
IPEAK (A)
10
10
0.1
0.6
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100
1
TJ = −55°C
TJ = 25°C
0.5
RG, GATE RESISTANCE ()
1000
ID, DRAIN CURRENT (A)
1
0.1
100
10
10
TC = 25°C
VGS ≤ 10 V
Single Pulse
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
TJ(initial) = 100°C
1
0.5 ms
1 ms
10 ms
1000
100
0.1
0.00001
0.0001
0.001
0.01
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVD5C478NL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
R(t) (°C/W)
10
1
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Response
ORDERING INFORMATION
Order Number
NVD5C478NLT4G
Package
Shipping†
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK (SINGLE GAUGE)
CASE 369C
ISSUE F
4
1 2
DATE 21 JUL 2015
3
SCALE 1:1
A
E
b3
B
c2
4
L3
Z
D
1
L4
C
A
2
3
NOTE 7
b2
e
c
SIDE VIEW
b
0.005 (0.13)
TOP VIEW
H
DETAIL A
M
BOTTOM VIEW
C
Z
H
L2
GAUGE
PLANE
C
L
L1
DETAIL A
Z
SEATING
PLANE
BOTTOM VIEW
A1
ALTERNATE
CONSTRUCTIONS
ROTATED 905 CW
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 8:
PIN 1. N/C
2. CATHODE
3. ANODE
4. CATHODE
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
STYLE 9:
STYLE 10:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
3. RESISTOR ADJUST
3. CATHODE
4. CATHODE
4. ANODE
SOLDERING FOOTPRINT*
6.20
0.244
2.58
0.102
5.80
0.228
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.028 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.114 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.72
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.90 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
GENERIC
MARKING DIAGRAM*
XXXXXXG
ALYWW
AYWW
XXX
XXXXXG
IC
Discrete
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
6.17
0.243
SCALE 3:1
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
XXXXXX
A
L
Y
WW
G
3.00
0.118
1.60
0.063
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
7. OPTIONAL MOLD FEATURE.
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON10527D
DPAK (SINGLE GAUGE)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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