NVD5C486NLT4G

NVD5C486NL MOSFET – Power, Single N-Channel 40 V, 16 mW, 24 A Features • • • • Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com RDS(on) V(BR)DSS ID 16 m @ 10 V 40 V 24.5 m @ 4.5 V 24 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RJC (Notes 1 & 3) Power Dissipation RJC (Note 1) Continuous Drain Current RJA (Notes 1, 2 & 3) TC = 25°C Steady State Pulsed Drain Current Value Unit VDSS 40 V VGS "20 V ID 24 A TC = 100°C TC = 25°C Steady State PD W 18 9.0 ID TA = 100°C TA = 25°C PD 2.9 1 2 DPAK CASE 369C STYLE 2 1.4 A TJ, Tstg −55 to 175 °C IS 15 A Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, IL(pk) = 1.7 A) EAS 63 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case (Drain) (Note 1) RJC 8.2 °C/W Junction−to−Ambient − Steady State (Note 2) RJA 52 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2017 June, 2019 − Rev. 0 4 W 110 Source Current (Body Diode) S N−CHANNEL MOSFET A 9.8 IDM Operating Junction and Storage Temperature G 7.0 TA = 100°C TA = 25°C, tp = 10 s D 17 TC = 100°C TA = 25°C Power Dissipation RJA (Notes 1 & 2) Symbol 1 3 MARKING DIAGRAM & PIN ASSIGNMENT 4 Drain AYWW 5C 486NLG Parameter 2 1 Drain 3 Gate Source A = Assembly Location Y = Year WW = Work Week 5C486NL = Device Code G = Pb−Free Package ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: NVD5C486NL/D NVD5C486NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 A 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 17 VGS = 0 V, VDS = 40 V mV/°C TJ = 25°C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 20 A A 100 nA 2.2 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ 1.2 4.6 mV/°C Drain−to−Source On Resistance RDS(on) VGS = 4.5 V, ID = 10 A 19.6 24.5 m Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 10 A 13.3 16 m gFS VDS = 3 V, ID = 10 A 25.5 S 530 pF Forward Transconductance CHARGES, CAPACITANCES AND GATE RESISTANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Ciss Coss Crss VGS = 0 V, f = 1.0 MHz, VDS = 25 V 210 VGS = 4.5 V, VDS = 32 V, ID = 10 A 4.7 nC nC 13 Total Gate Charge QG(TOT) Total Gate Charge QG(TOT) 9.8 Threshold Gate Charge QG(TH) 1.2 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Plateau Voltage VGP 3.2 V td(on) 6.0 ns tr 14 VGS = 10 V, VDS = 32 V, ID = 10 A 2.0 1.5 SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(off) VGS = 10 V, VDS = 32 V, ID = 10 A, RG = 2.5  tf 15 2.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD VGS = 0 V, IS = 10 A TJ = 25°C 0.88 TJ = 125°C 0.77 tRR 19 Charge Time ta 8.0 Discharge Time tb Reverse Recovery Charge VGS = 0 V, dIs/dt = 100 A/s, IS = 10 A QRR www.onsemi.com 2 V ns 10 10 4. Pulse Test: Pulse Width ≤ 300 s, Duty Cycle ≤ 2%. 5. Switching characteristics are independent of operating junction temperatures. 1.2 nC NVD5C486NL TYPICAL CHARACTERISTICS 35 35 4.0 V 20 15 3.2 V 10 2.8 V 5 0 1 2 15 TJ = 25°C 10 0 TJ = 125°C 1 TJ = −55°C 2 3 4 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics ID = 10 A TJ = 25°C 25 20 15 10 3 20 3 30 5 25 5 4 5 6 7 8 9 10 30 TJ = 25°C 25 20 VGS = 4.5 V 15 VGS = 10 V 10 5 7 6 5 8 10 9 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.0 100K ID = 10 A VGS = 10 V TJ = 175°C 10K 1.5 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (m) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) ID, DRAIN CURRENT (A) 3.6 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (m) ID, DRAIN CURRENT (A) VGS = 10 V to 4.5 V 25 0 VDS = 3 V 30 30 1.0 0.5 TJ = 150°C 1K TJ = 125°C 100 TJ = 85°C 10 1 TJ = 25°C 0.1 0.01 0 −50 −25 0 25 50 75 100 125 150 0.001 175 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NVD5C486NL 1K VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS Ciss C, CAPACITANCE (pF) Coss 100 Crss 10 TJ = 25°C VGS = 0 V f = 1 MHz 0 5 10 15 20 25 30 40 7 6 5 Qgs 4 Qgd 3 VDS = 32 V ID = 10 A TJ = 25°C 2 1 0 0 1 2 3 4 7 6 8 10 9 Figure 8. Gate−to−Source Voltage vs. Total Charge 10 VGS = 0 V td(off) tf tr td(on) VGS = 10 V VDS = 32 V ID = 15 A 1 1 0.1 100 10 TJ = 125°C 0.3 0.4 TJ = −55°C TJ = 25°C 0.5 0.6 0.7 0.8 0.9 1.0 1.1 RG, GATE RESISTANCE () VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 100 TJ(initial) = 25°C 100 10 IPEAK (A) 10 s 10 TC = 25°C VGS ≤ 10 V Single Pulse 1 0.1 5 Figure 7. Capacitance Variation 1 ID, DRAIN CURRENT (A) 8 Qg, TOTAL GATE CHARGE (nC) 10 0.1 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 t, TIME (ns) 35 IS, SOURCE CURRENT (A) 1 10 RDS(on) Limit Thermal Limit Package Limit 0.1 1 TJ(initial) = 100°C 1 10 0.5 ms 1 ms 10 ms 1000 100 0.1 0.00001 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NVD5C486NL TYPICAL CHARACTERISTICS R(t) (°C/W) 100 50% Duty Cycle 20% 10 10% 5% 2% 1 1% 0.1 Single Pulse 0.01 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response ORDERING INFORMATION Order Number NVD5C486NLT4G Package Shipping† DPAK (Pb−Free) 2500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (SINGLE GAUGE) CASE 369C ISSUE G 4 1 2 DATE 31 MAY 2023 3 SCALE 1:1 GENERIC MARKING DIAGRAM* STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR STYLE 6: PIN 1. MT1 2. MT2 3. GATE 4. MT2 STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN STYLE 7: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR DOCUMENT NUMBER: DESCRIPTION: STYLE 3: PIN 1. ANODE 2. CATHODE 3. ANODE 4. CATHODE STYLE 8: PIN 1. N/C 2. CATHODE 3. ANODE 4. CATHODE STYLE 4: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE STYLE 5: PIN 1. GATE 2. ANODE 3. CATHODE 4. ANODE STYLE 9: STYLE 10: PIN 1. ANODE PIN 1. CATHODE 2. CATHODE 2. ANODE 3. RESISTOR ADJUST 3. CATHODE 4. CATHODE 4. ANODE 98AON10527D DPAK (SINGLE GAUGE) XXXXXXG ALYWW AYWW XXX XXXXXG IC Discrete XXXXXX A L Y WW G = Device Code = Assembly Location = Wafer Lot = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ADDITIONAL INFORMATION TECHNICAL PUBLICATIONS: Technical Library: www.onsemi.com/design/resources/technical−documentation onsemi Website: www.onsemi.com  ONLINE SUPPORT: www.onsemi.com/support For additional information, please contact your local Sales Representative at www.onsemi.com/support/sales