MOSFET – Power,
N-Channel, Logic Level
100 V, 25 A, 50 mW
NVD6495NL
Features
Low RDS(on)
100% Avalanche Tested
AEC−Q101 Qualified
These Devices are Pb−Free and are RoHS Compliant
http://onsemi.com
V(BR)DSS
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
100
V
Gate−to−Source Voltage − Continuous
VGS
$20
V
ID
25
A
Continuous Drain
Current
Steady
State
Power Dissipation
Steady
State
Pulsed Drain Current
TC = 25°C
TC = 100°C
TC = 25°C
tp = 10 ms
Operating and Storage Temperature Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 Vdc, VGS = 10 Vdc, IL(pk) =
23 A, L = 0.3 mH, RG = 25 W)
Lead Temperature for Soldering
Purposes, 1/8″ from Case for 10 Seconds
18
50 mW @ 10 V
25 A
D
G
PD
83
W
IDM
80
A
TJ, Tstg
−55 to
+175
°C
IS
25
A
EAS
79
mJ
S
TL
260
4
1 2
THERMAL RESISTANCE RATINGS
Symbol
Max
Unit
Junction−to−Case (Drain) − Steady State
RqJC
1.8
°C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
49
1. Surface mounted on FR4 board using 1 sq in pad size,
(Cu Area 1.127 sq in [2 oz] including traces).
3
DPAK
CASE 369AA
STYLE 2
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Parameter
ID MAX
54 mW @ 4.5 V
100 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
RDS(on) MAX
MARKING DIAGRAM
& PIN ASSIGNMENT
4 Drain
YWW
64
95NLG
•
•
•
•
1
Gate
6495NL
Y
WW
G
2
Drain
3
Source
= Device Code
= Year
= Work Week
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 2014
April, 2020 − Rev. 3
1
Publication Order Number:
NVD6495NL/D
NVD6495NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
VGS = 0 V, ID = 250 mA, TJ = −40°C
100
92
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
V
115
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = "20 V
VGS(TH)
VGS = VDS, ID = 250 mA
VGS = 0 V,
VDS = 100 V
TJ = 25°C
mV/°C
1.0
TJ = 125°C
mA
100
"100
nA
2.0
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
1.0
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On−Resistance
RDS(on)
VGS = 4.5 V, ID = 10 A
44
54
VGS = 10 V, ID = 10 A
43
50
gFS
VDS = 5.0 V, ID = 10 A
24
S
1024
pF
Forward Transconductance
4.8
mV/°C
mW
CHARGES, CAPACITANCES AND GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
70
Total Gate Charge
QG(TOT)
20
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
Total Gate Charge
VGS = 0 V, f = 1.0 MHz, VDS = 25 V
VGS = 4.5 V, VDS = 80 V, ID = 23 A
QGD
QG(TOT)
156
nC
1.1
3.1
14
VGS = 10 V, VDS = 80 V, ID = 23 A
35
nC
11
ns
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
td(on)
tr
Turn−Off Delay Time
Fall Time
td(off)
VGS = 4.5 V, VDD = 80 V,
ID = 23 A, RG = 6.1 W
tf
91
40
71
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V, IS = 23 A
TJ = 25°C
0.87
TJ = 125°C
0.74
Reverse Recovery Time
tRR
64
Charge Time
Ta
40
Discharge Time
Tb
Reverse Recovery Charge
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 23 A
QRR
1.2
V
ns
24
152
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
ORDERING INFORMATION
Device
NVD6495NLT4G
Package
Shipping†
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
http://onsemi.com
2
NVD6495NL
45
4V
5V
35
30
3.4 V
25
3.2 V
20
15
3.0 V
10
2.8 V
35
30
25
20
10
5
0
0
1
2
3
4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
5
TJ = 25°C
15
5
0
VDS w 10 V
40
3.6 V
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
40
45
TJ = 25°C
VGS = 10 V
TJ = 125°C
TJ = −55°C
1
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
Figure 1. On−Region Characteristics
0.050
0.050
ID = 23 A
TJ = 25°C
0.048
TJ = 25°C
0.048
0.046
0.046
0.044
VGS = 4.5 V
0.044
0.042
0.040
VGS = 10 V
0.042
2
3
4
5
6
7
8
9
10
0.040
5
VGS, GATE−TO−SOURCE VOLTAGE (V)
20
25
10000
VGS = 0 V
IDSS, LEAKAGE (nA)
ID = 23 A
VGS = 4.5 V
2.0
1.5
1.0
0.5
−50
15
Figure 4. On−Resistance versus Drain
Current and Gate Voltage
3.0
2.5
10
ID, DRAIN CURRENT (A)
Figure 3. On−Region versus Gate Voltage
RDS(on), DRAIN−TO−SOURCE RESISTANCE
(NORMALIZED)
4
2
3
VGS, GATE−TO−SOURCE VOLTAGE (V)
−25
0
25
50
75
100
125
150
175
TJ = 150°C
1000
TJ = 125°C
100
10
20
30
40
50
60
70
80
90 100
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
versus Voltage
http://onsemi.com
3
C, CAPACITANCE (pF)
2500
TJ = 25°C
VGS = 0 V
2000
1500
Ciss
1000
500
0
Crss
0
10
Coss
20
30
40
50
60
70
80
90
VGS, GATE−TO−SOURCE VOLTAGE (V)
NVD6495NL
100
6
Qds
4
Qgs
VDS = 80 V
ID = 23 A
TJ = 25°C
2
0
0
5
10
15
20
25
30
35
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source Voltage and
Drain−to−Source Voltage versus Total Charge
25
IS, SOURCE CURRENT (A)
tr
100
tf
10
td(off)
td(on)
1
100
10
100
TJ = 25°C
VGS = 0 V
20
15
10
5
0
0.50 0.55 0.60 0.65 0.70 0.75 0.80 0.85 0.90 0.95
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
versus Gate Resistance
Figure 10. Diode Forward Voltage versus
Current
125
ID = 23 A
AVALANCHE ENERGY (mJ)
t, TIME (ns)
8
Figure 7. Capacitance Variation
VDS = 80 V
ID = 23 A
VGS = 4.5 V
ID, DRAIN CURRENT (A)
QT
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
1
10
10 ms
10
100 ms
VGS = 10 V
SINGLE PULSE
TC = 25°C
1
1 ms
10 ms
dc
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
100
75
50
25
0
25
50
75
100
125
150
TJ, STARTING JUNCTION TEMPERATURE
175
Figure 12. Maximum Avalanche Energy versus
Starting Junction Temperature
http://onsemi.com
4
RqJC(t) (°C/W) EFFECTIVE TRANSIENT
THERMAL RESISTANCE
NVD6495NL
10
1
Duty Cycle = 0.5
0.2
0.1
0.05
0.1 0.02
0.01
0.01
0.001
SINGLE PULSE
0.000001
0.00001
0.0001
0.001
0.01
t, PULSE TIME (s)
Figure 13. Thermal Response
http://onsemi.com
5
0.1
1
10
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DPAK (SINGLE GUAGE)
CASE 369AA−01
ISSUE B
4
1 2
DATE 03 JUN 2010
3
SCALE 1:1
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
2
b2
H
DETAIL A
3
c
b
0.005 (0.13)
e
M
H
C
L2
GAUGE
PLANE
C
L
L1
DETAIL A
A1
ROTATED 905 CW
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
STYLE 3:
PIN 1. ANODE
2. CATHODE
3. ANODE
4. CATHODE
STYLE 5:
PIN 1. GATE
2. ANODE
3. CATHODE
4. ANODE
STYLE 6:
PIN 1. MT1
2. MT2
3. GATE
4. MT2
STYLE 7:
PIN 1. GATE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
STYLE 4:
PIN 1. CATHODE
2. ANODE
3. GATE
4. ANODE
SOLDERING FOOTPRINT*
6.20
0.244
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
2.58
0.102
5.80
0.228
3.00
0.118
1.60
0.063
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
GENERIC
MARKING DIAGRAM*
XXXXXXG
ALYWW
YWW
XXX
XXXXXG
IC
Discrete
XXXXXX
A
L
Y
WW
G
6.17
0.243
SCALE 3:1
SEATING
PLANE
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
= Device Code
= Assembly Location
= Wafer Lot
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer
to device data sheet for actual part
marking.
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13126D
DPAK (SINGLE GAUGE)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
