MMBF2201N, NVF2201N
Power MOSFET
300 mAmps, 20 Volts
N−Channel SC−70/SOT−323
These miniature surface mount MOSFETs low RDS(on) assure
minimal power loss and conserve energy, making these devices ideal
for use in small power management circuitry. Typical applications are
d c −d c c o n v e r t e r s , p o w e r m a n a g e m e n t i n p o r t a b l e a n d
battery−powered products such as computers, printers, PCMCIA
cards, cellular and cordless telephones.
http://onsemi.com
300 mAMPS, 20 VOLTS
RDS(on) = 1 W
N−Channel
3
Features
• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SC−70/SOT−323 Surface Mount Package Saves
•
•
Board Space
NVF Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
These Devices are Pb−Free and are RoHS Compliant
1
2
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Rating
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
20
Vdc
Gate−to−Source Voltage − Continuous
VGS
± 20
Vdc
Drain Current
− Continuous @ TA = 25°C
− Continuous @ TA = 70°C
− Pulsed Drain Current (tp ≤ 10 ms)
ID
ID
300
240
750
Total Power Dissipation @ TA = 25°C
(Note 1)
Derate above 25°C
IDM
PD
mAdc
150
1.2
mW
mW/°C
Operating and Storage Temperature Range
TJ, Tstg
− 55 to 150
°C
Thermal Resistance, Junction−to−Ambient
RqJA
833
°C/W
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Mounted on G10/FR4 glass epoxy board using minimum recommended
footprint.
MARKING DIAGRAM
AND PIN ASSIGNMENT
3
1
2
3
Drain
SC−70/SOT−323
CASE 419
STYLE 8
N1 M G
G
1
2
Gate Source
N1 = Device Code
M = Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Device
Package
Shipping†
MMBF2201NT1G
SOT−323
(Pb−Free)
3000 / Tape &
Reel
NVF2201NT1G*
SOT−323
(Pb−Free)
3000 / Tape &
Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2013
August, 2013 − Rev. 7
1
Publication Order Number:
MMBF2201NT1/D
MMBF2201N, NVF2201N
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
V(BR)DSS
20
−
−
Vdc
−
−
−
−
1.0
10
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 10 mA)
Zero Gate Voltage Drain Current
(VDS = 16 Vdc, VGS = 0 Vdc)
(VDS = 16 Vdc, VGS = 0 Vdc, TJ = 125°C)
IDSS
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
−
−
±100
nAdc
Gate Threshold Voltage
(VDS = VGS, ID = 250 mAdc)
VGS(th)
1.0
1.7
2.4
Vdc
Static Drain−to−Source On−Resistance
(VGS = 10 Vdc, ID = 300 mAdc)
(VGS = 4.5 Vdc, ID = 100 mAdc)
rDS(on)
−
−
0.75
1.0
1.0
1.4
gFS
−
450
−
mMhos
pF
mAdc
ON CHARACTERISTICS (Note 2)
Forward Transconductance (VDS = 10 Vdc, ID = 200 mAdc)
W
DYNAMIC CHARACTERISTICS
Input Capacitance
(VDS = 5.0 V)
Ciss
−
45
−
Output Capacitance
(VDS = 5.0 V)
Coss
−
25
−
Transfer Capacitance
(VDG = 5.0 V)
Crss
−
5.0
−
td(on)
−
2.5
−
tr
−
2.5
−
td(off)
−
15
−
tf
−
0.8
−
QT
−
1400
−
pC
A
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
(VDD = 15 Vdc, ID = 300 mAdc,
RL = 50 W)
Fall Time
Gate Charge (See Figure 5)
ns
SOURCE−DRAIN DIODE CHARACTERISTICS
Continuous Current
IS
−
−
0.3
Pulsed Current
ISM
−
−
0.75
Forward Voltage (Note 3)
VSD
−
0.85
−
V
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
TYPICAL CHARACTERISTICS
1.0
1.6
1.4
VGS = 4 V
0.8
RDS , ON RESISTANCE (OHMS)
ID , DRAIN CURRENT (AMPS)
0.9
0.7
0.6
VGS = 3.5 V
0.5
0.4
VGS = 3 V
0.3
0.2
VGS = 2.5 V
0.1
1
2
3
4
5
6
7
8
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
9
VGS = 4.5 V
1.0
ID = 100 mA
0.8
VGS = 10 V
0.6
ID = 300 mA
0.4
0.2
0
0
1.2
0
-60 -40 -20
10
Figure 1. Typical Drain Characteristics
0
20 40 60 80
TEMPERATURE (°C)
100 120 140 160
Figure 2. On Resistance versus Temperature
http://onsemi.com
2
MMBF2201N, NVF2201N
TYPICAL CHARACTERISTICS
1.2
RDS , ON RESISTANCE (OHMS)
RDS , ON RESISTANCE (OHMS)
10
ID = 300 mA
8
6
4
2
0
VGS = 4.5 V
1.0
0.8
0.6
VGS = 10 V
0.4
0.2
0
0
1
2
3
4
5
6
7
8
GATE-SOURCE VOLTAGE (VOLTS)
9
10
0
Figure 3. On Resistance versus Gate −Source
Voltage
0.1
0.2
0.3
0.4
0.5
0.6
ID, DRAIN CURRENT (AMPS)
0.8
Figure 4. On Resistance versus Drain Current
1.0
45
VGS = 0 V
F = 1 mHz
40
35
C, CAPACITANCE (pF)
I S , SOURCE CURRENT (AMPS)
0.7
0.1
0.01
30
25
20
Ciss
15
Coss
10
Crss
5
0.001
0
0.2 0.3 0.4
0.5 0.6
0.7 0.8 0.9
0.1
VSD, SOURCE-DRAIN FORWARD VOLTAGE (VOLTS)
1.0
0
Figure 5. Source −Drain Forward Voltage
2
6
10
14
4
8
12
16
VDS, DRAIN-SOURCE VOLTAGE (VOLTS)
Figure 6. Capacitance Variation
1.0
0.9
I D , DRAIN CURRENT (AMPS)
0
0.8
-55
0.7
25
150
0.6
0.5
0.4
0.3
0.2
0.1
0
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
VGS, GATE-SOURCE VOLTAGE (VOLTS)
Figure 7. Transfer Characteristics
http://onsemi.com
3
4.0
4.5
18
20
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419
ISSUE R
DATE 11 OCT 2022
SCALE 4:1
GENERIC
MARKING DIAGRAM
XX MG
G
1
XX
M
G
= Specific Device Code
= Date Code
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLE 1:
CANCELLED
STYLE 6:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
DOCUMENT NUMBER:
DESCRIPTION:
STYLE 2:
PIN 1. ANODE
2. N.C.
3. CATHODE
STYLE 3:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. ANODE
STYLE 5:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 7:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 8:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 9:
PIN 1. ANODE
2. CATHODE
3. CATHODE-ANODE
STYLE 10:
PIN 1. CATHODE
2. ANODE
3. ANODE-CATHODE
98ASB42819B
SC−70 (SOT−323)
STYLE 11:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
onsemi and
are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves
the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation
special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
