NVF6P02T3G

NTF6P02, NVF6P02 MOSFET – Power, P-Channel, SOT-223 -10 A, -20 V Features • • • • • • www.onsemi.com Low RDS(on) Logic Level Gate Drive Diode Exhibits High Speed, Soft Recovery Avalanche Energy Specified NVF Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable* These Devices are Pb−Free and are RoHS Compliant −10 AMPERES −20 VOLTS RDS(on) = 44 mW (Typ.) S G Typical Applications • Power Management in Portables and Battery−Powered Products, i.e.: Cellular and Cordless Telephones and PCMCIA Cards D P−Channel MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Rating Symbol Value Unit Drain−to−Source Voltage VDSS −20 Vdc Gate−to−Source Voltage VGS ±8.0 Vdc ID ID Adc IDM −10 −8.4 −35 Total Power Dissipation @ TA = 25°C PD 8.3 W TJ, Tstg −55 to +150 °C EAS 150 mJ RqJL RqJA RqJA 15 71.4 160 TL 260 Single Pulse Drain−to−Source Avalanche Energy − Starting TJ = 25°C (VDD = −20 Vdc, VGS = −5.0 Vdc, IL(pk) = −10 A, L = 3.0 mH, RG = 25W) Thermal Resistance − Junction to Lead (Note 1) − Junction to Ambient (Note 2) − Junction to Ambient (Note 3) Maximum Lead Temperature for Soldering Purposes, 1/8″ from case for 10 seconds Apk °C/W °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Steady State. 2. When surface mounted to an FR4 board using 1” pad size, (Cu. Area 1.127 sq in), Steady State. 3. When surface mounted to an FR4 board using minimum recommended pad size, (Cu. Area 0.412 sq in), Steady State. © Semiconductor Components Industries, LLC, 2013 May, 2019 − Rev. 7 1 Drain 4 4 1 Drain Current (Note 1) − Continuous @ TA = 25°C − Continuous @ TA = 70°C − Single Pulse (tp = 10 ms) Operating and Storage Temperature Range MARKING DIAGRAM & PIN ASSIGNMENT 2 3 AYW F6P02G G SOT−223 CASE 318E STYLE 3 1 Gate 2 3 Drain Source A = Assembly Location Y = Year W = Work Week F6P02 = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION Package Shipping† NTF6P02T3G SOT−223 (Pb−Free) 4000 / Tape & Reel NVF6P02T3G* SOT−223 (Pb−Free) 4000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NTF6P02T3/D NTF6P02, NVF6P02 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit −20 − −25 −11 − − − − − − −1.0 −10 − − ± 100 −0.4 − −0.7 2.6 −1.0 − − − − 44 57 57 50 70 − gfs − 12 − Mhos pF OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 4) (VGS = 0 Vdc, ID = −250 mAdc) Temperature Coefficient (Positive) V(BR)DSS Zero Gate Voltage Drain Current (VDS = −20 Vdc, VGS = 0 Vdc) (VDS = −20 Vdc, VGS = 0 Vdc, TJ = 125°C) IDSS Gate−Body Leakage Current (VGS = ± 8.0 Vdc, VDS = 0 Vdc) IGSS Vdc mV/°C mAdc nAdc ON CHARACTERISTICS (Note 4) Gate Threshold Voltage (Note 4) (VDS = VGS, ID = −250 mAdc) Threshold Temperature Coefficient (Negative) VGS(th) Static Drain−to−Source On−Resistance (Note 4) (VGS = −4.5 Vdc, ID = −6.0 Adc) (VGS = −2.5 Vdc, ID = −4.0 Adc) (VGS = −2.5 Vdc, ID = −3.0 Adc) RDS(on) Forward Transconductance (Note 4) (VDS = −10 Vdc, ID = −6.0 Adc) Vdc mV/°C mW DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance (VDS = −16 Vdc, VGS = 0 V, f = 1.0 MHz) Transfer Capacitance Input Capacitance Output Capacitance Ciss − 900 1200 Coss − 350 500 Crss − 90 150 Ciss − 940 − Coss − 410 − Crss − 110 − (VDD = −5.0 Vdc, ID = −1.0 Adc, VGS = −4.5 Vdc, RG = 6.0 W) td(on) − 7.0 12 tr − 25 45 td(off) − 75 125 tf − 50 85 (VDD = −16 Vdc, ID = −6.0 Adc, VGS = −4.5 Vdc, RG = 2.5 W) td(on) − 8.0 − (VDS = −10 Vdc, VGS = 0 V, f = 1.0 MHz) Transfer Capacitance pF SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Gate Charge tr − 30 − td(off) − 60 − tf − 60 − ns ns QT − 15 20 Qgs − 1.7 − Qgd − 6.0 − (IS = −3.0 Adc, VGS = 0 Vdc) (Note 4) (IS = −2.1 Adc, VGS = 0 Vdc) (IS = −3.0 Adc, VGS = 0 Vdc, TJ = 125°C) VSD − − − −0.82 −0.74 −0.68 −1.2 − − Vdc (IS = −3.0 Adc, VGS = 0 Vdc, dIS/dt = 100 A/ms) (Note 4) trr − 42 − ns ta − 17 − tb − 25 − QRR − 0.036 − (VDS = −16 Vdc, ID = −6.0 Adc, VGS = −4.5 Vdc) (Note 4) nC SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage Reverse Recovery Time Reverse Recovery Stored Charge 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2.0%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 mC NTF6P02, NVF6P02 12 −10 V −7.0 V −5.0 V 9 −2.2 V −2.0 V −2.4 V −3.2 V −4.4 V 12 TJ = 25°C −ID, DRAIN CURRENT (AMPS) −ID, DRAIN CURRENT (AMPS) TYPICAL ELECTRICAL CHARACTERISTICS −1.8 V 6 −1.6 V 3 −1.4 V VGS = −1.2 V 0 0 1 2 4 3 5 6 7 8 9 VDS ≥ −10 V 10 8 6 4 TJ = −55°C 2 0 10 TJ = 25°C 0 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) 0.5 0.1 0.05 2 1 3 5 4 6 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID = −6.0 A TJ = 25°C 0 2.5 3 TJ = 25°C 0.07 VGS = −2.5 V 0.06 0.05 VGS = −4.5 V 0.04 0.03 0.02 4 2 6 8 10 12 14 −ID, DRAIN CURRENT (AMPS) Figure 4. On−Resistance versus Drain Current and Gate Voltage 1.6 10,000 ID = −6.0 A VGS = −4.5 V VGS = 0 V TJ = 150°C −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 2 0.08 Figure 3. On−Resistance versus Gate−to−Source Voltage 1.4 1.5 Figure 2. Transfer Characteristics 0.2 0 1 −VGS, GATE−TO−SOURCE VOLTAGE (VOLTS) Figure 1. On−Region Characteristics 0.15 TJ = 100°C 1.2 1000 1.0 0.8 0.6 −50 −25 0 25 50 75 100 125 150 TJ = 100°C 100 2 4 6 8 10 12 14 16 18 −VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (°C) Figure 6. Drain−to−Source Leakage Current versus Voltage Figure 5. On−Resistance Variation with Temperature www.onsemi.com 3 20 NTF6P02, NVF6P02 VDS = 0 V VGS = 0 V TJ = 25°C C, CAPACITANCE (pF) Ciss 2400 1800 Crss 1200 Ciss 600 Coss Crss 0 10 10 15 20 −VDS 16 −VGS 3 12 Qgs Qgd 2 8 ID = −6.0 A TJ = 25°C 1 4 0 0 0 4 8 12 16 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 7 −IS, SOURCE CURRENT (AMPS) VDD = −16 V ID = −3.0 A VGS = −4.5 V td(off) 100 tf tr 10 1 4 20 QT GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) 1000 t, TIME (ns) 5 −VGS 0 −VDS 5 5 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) 3000 −VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS td(on) VGS = 0 V TJ = 25°C 6 5 4 3 2 1 0 1 10 RG, GATE RESISTANCE (W) 100 Figure 9. Resistive Switching Time Variation versus Gate Resistance 0.3 0.6 1.2 0.9 −VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS) Figure 10. Diode Forward Voltage versus Current www.onsemi.com 4 NTF6P02, NVF6P02 TYPICAL ELECTRICAL CHARACTERISTICS RTHJA(t), EFFECTIVE TRANSIENT THERMAL RESPONSE 1 D = 0.5 0.2 NORMALIZED TO RqJA AT STEADY STATE (1″ PAD) 0.1 0.1 0.05 0.0175 W CHIP JUNCTION 0.0154 F 0.02 0.0710 W 0.2706 W 0.5779 W 0.7086 W 0.0854 F 0.3074 F 1.7891 F 107.55 F 0.01 AMBIENT SINGLE PULSE 0.01 1.0E-03 1.0E-02 1.0E-01 1.0E+00 t, TIME (s) 1.0E+01 Figure 11. FET Thermal Response www.onsemi.com 5 1.0E+02 1.0E+03 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SOT−223 (TO−261) CASE 318E−04 ISSUE R DATE 02 OCT 2018 SCALE 1:1 q q DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com SOT−223 (TO−261) CASE 318E−04 ISSUE R STYLE 1: PIN 1. 2. 3. 4. BASE COLLECTOR EMITTER COLLECTOR STYLE 2: PIN 1. 2. 3. 4. ANODE CATHODE NC CATHODE STYLE 6: PIN 1. 2. 3. 4. RETURN INPUT OUTPUT INPUT STYLE 7: PIN 1. 2. 3. 4. ANODE 1 CATHODE ANODE 2 CATHODE STYLE 11: PIN 1. MT 1 2. MT 2 3. GATE 4. MT 2 STYLE 3: PIN 1. 2. 3. 4. GATE DRAIN SOURCE DRAIN STYLE 8: STYLE 12: PIN 1. INPUT 2. OUTPUT 3. NC 4. OUTPUT CANCELLED DATE 02 OCT 2018 STYLE 4: PIN 1. 2. 3. 4. SOURCE DRAIN GATE DRAIN STYLE 5: PIN 1. 2. 3. 4. STYLE 9: PIN 1. 2. 3. 4. INPUT GROUND LOGIC GROUND STYLE 10: PIN 1. CATHODE 2. ANODE 3. GATE 4. ANODE DRAIN GATE SOURCE GATE STYLE 13: PIN 1. GATE 2. COLLECTOR 3. EMITTER 4. COLLECTOR GENERIC MARKING DIAGRAM* AYW XXXXXG G 1 A = Assembly Location Y = Year W = Work Week XXXXX = Specific Device Code G = Pb−Free Package (Note: Microdot may be in either location) *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98ASB42680B SOT−223 (TO−261) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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