NVH040N65S3F

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MOSFET – Power, N-Channel, SUPERFET) III, FRFET) 650 V, 65 A, 40 mW NVH040N65S3F www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. VDSS RDS(ON) MAX ID MAX 650 V 40 mW @ 10 V 65 A D G Features • • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 33.8 mW Ultra Low Gate Charge (Typ. Qg = 153 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 1333 pF) 100% Avalanche Tested AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant S POWER MOSFET Applications TO−247−3LD CASE 340CK • Automotive On Board Charger HEV−EV • Automotive DC/DC converter for HEV−EV MARKING DIAGRAM AYWWZZ NVH 040N65S3F NVH040N65S3F A YWW ZZ = Specific Device Code = Assembly Plant Code = Data Code (Year & Week) = Lot ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2019 September, 2020 − Rev. 0 1 Publication Order Number: NVH040N65S3F/D NVH040N65S3F ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V − DC ±30 V − AC (f > 1 Hz) ±30 − Continuous (TC = 25°C) 65 − Continuous (TC = 100°C) 45 IDM Drain Current 162.5 A EAS Single Pulsed Avalanche Energy (Note 2) 1009 mJ EAR Repetitive Avalanche Energy (Note 1) 4.46 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 PD − Pulsed (Note 1) A Power Dissipation (TC = 25°C) − Derate Above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds 446 W 3.57 W/°C −55 to +150 °C 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 9 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 32.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter Value Unit RqJC Thermal Resistance, Junction to Case, Max. 0.28 _C/W RqJA Thermal Resistance, Junction to Ambient, Max. 40 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Shipping (Qty / Packing) NVH040N65S3F NVH040N65S3F TO−247 G03 Tube 30 Units / Tube www.onsemi.com 2 NVH040N65S3F ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit VGS = 0 V, ID = 1 mA, TJ = 25_C 650 − − V VGS = 0 V, ID = 10 mA, TJ = 150_C 700 − − V OFF CHARACTERISTICS BVDSS Drain to Source Breakdown Voltage DBVDSS / DTJ Breakdown Voltage Temperature Coefficient ID = 10 mA, Referenced to 25_C − 0.64 − V/_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 10 mA VDS = 520 V, TC = 125_C − 103 − IGSS Gate to Body Leakage Current VGS = ±30 V, VDS = 0 V − − ±100 nA ON CHARACTERISTICS VGS(th) Gate Threshold Voltage VGS = VDS, ID = 2.1 mA 3.0 − 5.0 V RDS(on) Static Drain to Source On Resistance VGS = 10 V, ID = 32.5 A − 33.8 40 mW Forward Transconductance VDS = 20 V, ID = 32.5 A − 40 − S VDS = 400 V, VGS = 0 V, f = 1 MHz − 5875 − pF − 140 − pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 1333 − pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 241 − pF Total Gate Charge at 10 V VDS = 400 V, ID = 32.5 A, VGS = 10 V (Note 4) − 153 − nC − 51 − nC Qg(tot) Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge ESR Equivalent Series Resistance − 61 − nC f = 1 MHz − 1.9 − W VDD = 400 V, ID = 32.5 A, VGS = 10 V Rg = 2.2 W (Note 4) − 41 − ns − 53 − ns SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time − 96 − ns Turn-Off Fall Time − 28 − ns Maximum Continuous Source to Drain Diode Forward Current − − 65 A ISM Maximum Pulsed Source to Drain Diode Forward Current − − 162.5 A VSD Source to Drain Diode Forward Voltage VGS = 0 V, ISD = 32.5 A − − 1.3 V trr Reverse Recovery Time − 159 − ns Qrr Reverse Recovery Charge VGS = 0 V, ISD = 32.5 A, dIF/dt = 100 A/ms − 840 − nC tf SOURCE-DRAIN DIODE CHARACTERISTICS IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NVH040N65S3F TYPICAL CHARACTERISTICS 10 5.5 V 1 200 1 10 Figure 2. On−Region Characteristics 4 5 6 7 8 9 TC = 25°C 0.05 VGS = 10 V 0.04 VGS = 20 V 0.03 0.02 0 CAPACITANCE (pF) IS, REVERSE DRAIN CURRENT (A) TJ = 25°C 0.01 TJ = −55°C 0.5 120 150 180 ID, DRAIN CURRENT (A) Ciss 10K 1K f = 1 MHz VGS = 0 V 100 1.0 1.5 1 2.0 Coss Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 0 90 100K 1 0.001 60 1M TJ = 150°C 0.1 30 Figure 4. On−Resistance Variation vs. Drain Current and Gate Voltage 250 ms Pulse Test VGS = 0 V 10 20 0.06 Figure 3. Transfer Characteristics 100 10 Figure 1. On−Region Characteristics VGS, GATE−TO−SOURCE VOLTAGE (V) 1000 1 VDS, DRAIN−SOURCE VOLTAGE (V) TJ = −55°C 3 0.1 VDS, DRAIN−SOURCE VOLTAGE (V) TJ = 150°C 1 5.5 V 10 1 TJ = 25°C 10 7.0 V 6.0 V 20 250 ms Pulse Test VDS = 20 V 100 VGS = 10 V 8.0 V 6.5 V 250 ms Pulse Test TC = 25°C 0.2 250 ms Pulse Test TC = 150°C 100 RDS(ON), DRAIN−SOURCE ON−RESISTANCE (W) ID, DRAIN CURRENT (A) 7.0 V 6.5 V 6.0 V 0.1 ID, DRAIN CURRENT (A) 200 8.0 V VGS = 10 V ID, DRAIN CURRENT (A) 200 100 10−1 100 101 Crss 102 VSD, BODY DIODE FORWARD VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 6. Capacitance Characteristics www.onsemi.com 4 103 NVH040N65S3F VDD = 130 V ID = 32.5 A VDD = 400 V 8 6 4 2 0 0 60 120 180 1.2 VGS = 0 V ID = 10 mA 1.1 1.0 0.9 0.8 −75 25 75 125 175 TJ, JUNCTION TEMPERATURE (°C) Figure 7. Gate Charge Characteristics Figure 8. Breakdown Voltage Variation vs. Temperature 300 3.0 VGS = 10 V ID = 32.5 A 2.0 1.5 1.0 0.5 0 −75 −25 25 75 125 10 ms Operation in this Area is Limited by RDS(ON) DC 1 0.1 175 100 ms 1 ms 10 TC = 25°C TJ = 150°C Single Pulse 1 10 100 1K TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−SOURCE VOLTAGE (V) Figure 9. On−Resistance Variation vs. Temperature Figure 10. Maximum Safe Operating Area 80 40 70 35 60 30 50 25 40 30 20 15 20 10 10 5 25 30 ms 100 ID, DRAIN CURRENT (A) 2.5 0 −25 Qg, TOTAL GATE CHARGECHARGE (nC) Eoss (mJ) ID, DRAIN CURRENT (A) RDS(ON), DRAIN−SOURCE ON−RESISTANCE (Normalized) VGS, GATE−SOURCE VOLTAGE (V) 10 BVDSS, DRAIN−SOURCE BREAKDOWN VOLTAGE (Normalized) TYPICAL CHARACTERISTICS 50 75 100 125 0 150 0 130 260 390 520 650 TC, CASE TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Drain Current vs. Case Temperature Figure 12. EOSS vs. Drain−to−Source Voltage www.onsemi.com 5 NVH040N65S3F 200 1.2 NRMALIZED GATE THRESHOLD VOLTAGE 180 160 140 120 100 TA = 150°C 80 60 Pulse Duration = 250 ms Duty Cycle = 0.5% Max ID = 32.5 A 40 20 0 r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE RDS(ON), DRAIN−SOURCE ON−RESISTANCE (mW) TYPICAL CHARACTERISTICS 4 5 6 TA = 25°C 7 8 9 VGS = VDS ID = 2.1 mA 1.0 0.8 0.6 −80 10 −40 0 40 80 120 160 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 13. RDS(ON) vs. Gate Voltage Figure 14. Normalized Gate Threshold Voltage vs. Temperature 10 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 PDM 0.01 0.01 0.001 t1 Single Pulse 0.00001 0.0001 0.001 t2 0.01 t, RECTANGULAR PULSE DURATION (s) Figure 15. Transient Thermal Response Curve www.onsemi.com 6 ZqJC(t) = r(t) x RqJC RqJC = 0.28°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 0.1 1 NVH040N65S3F VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Charge Figure 16. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr td(off) ton tf toff Figure 17. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 18. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time NVH040N65S3F + DUT VDS − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VDD VSD Body Diode Forward Voltage Drop Figure 19. Peak Diode Recovery dv/dt Test Circuit & Waveforms www.onsemi.com 8 NVH040N65S3F PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S www.onsemi.com 9 MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 NVH040N65S3F SUPERFET is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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