NVH050N65S3F

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MOSFET – Power, N‐Channel, SUPERFET III, FRFET 650 V, 50 mW, 58 A NVH050N65S3F www.onsemi.com Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III FRFET MOSFET’s optimized reverse recovery performance of body diode can remove additional component and improve system reliability. VDSS RDS(ON) MAX ID MAX 650 V 50 mW 58 A D G Features • • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 42 mW Ultra Low Gate Charge (Typ. Qg = 121 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 1119 pF) 100% Avalanche Tested AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant S G D S TO−247−3LD CASE 340CK Applications • Automotive On Board Charger HEV−EV • Automotive DC/DC Converter HEV−EV MARKING DIAGRAM $Y&Z&3&K NVH 050N65S3F $Y &Z &3 &K NVH050N65S3F = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2020 October, 2020 − Rev. 0 1 Publication Order Number: NVH050N65S3F/D NVH050N65S3F ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter VDSS Drain to Source Voltage VGSS Gate to Source Voltage ID Drain Current Value Unit 650 V − DC ±30 V − AC (f > 1 Hz) ±30 − Continuous (TC = 25°C) 58 − Continuous (TC = 100°C) 36 − Pulsed (Note 1) A IDM Drain Current 145 A EAS Single Pulsed Avalanche Energy (Note 2) 830 mJ IAS Avalanche Current (Note 2) 7.5 A EAR Repetitive Avalanche Energy (Note 1) 4.03 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 PD Power Dissipation TJ, TSTG TL (TC = 25°C) 403 W − Derate Above 25°C 3.23 W/°C −55 to +150 °C 300 °C Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 7.5 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 29 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter RqJC Thermal Resistance, Junction to Case, Max. RqJA Thermal Resistance, Junction to Ambient, Max. Value Unit 0.31 _C/W 40 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NVH050N65S3F NVH050N65S3F TO−247 Tube N/A N/A 30 Units www.onsemi.com 2 NVH050N65S3F ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage BVDSS VGS = 0 V, ID = 1 mA, TJ = 25°C 650 V Drain−to−Source Breakdown Voltage BVDSS VGS = 0 V, ID = 1 mA, TJ = 150°C 700 V Breakdown Voltage Temperature Coefficient DBVDSS/ DTJ ID = 10 mA, Referenced to 25_C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 650 V Gate−to−Body Leakage Current IGSS VGS = ±30 V, VDS = 0 V VGS(th) VGS = VDS, ID = 1.7 mA DVGS(th)/DTJ VGS = VDS, ID = 1.7 mA −8 RDS(on) VGS = 10 V, ID = 29 A 42 gFS VDS = 20 V, ID = 29 A 32.8 S 5404 pF 640 mV/_C 10 mA ±100 nA 5.0 V 19 VDS = 520 V, TC = 125_C ON CHARACTERISTICS Gate Threshold Voltage Threshold Temperature Coefficient Static Drain−to−Source On Resistance Forward Transconductance 3.0 mV/_C 50 mW DYNAMIC CHARACTERISTICS Input Capacitance Ciss Output Capacitance Coss VGS = 0 V, VDS = 400 V, f = 1 MHz 110 Reverse Transfer Capacitance Crss Effective Output Capacitance Coss(eff.) VDS = 0 V to 400 V, VGS = 0 V 1119 pF Energy Related Output Capacitance Coss(er.) VDS = 0 V to 400 V, VGS = 0 V 198 pF Total Gate Charge at 10 V QG(TOT) 123 nC Threshold Gate Charge QG(TH) VGS = 10 V, VDS = 400 V, ID = 29 A (Note 4) 22.9 Gate−to−Source Gate Charge QGS Gate−to−Drain “Miller” Charge QGD Equivalent Series Resistance ESR 13 39.5 51.4 f = 1 MHz 1.7 W 38 ns 47 ns 87 ns 6 ns SWITCHING CHARACTERISTICS Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time VGS = 10 V, VDD = 400 V, ID = 29 A, Rg = 2.2 W (Note 4) tf SOURCE−DRAIN DIODE CHARACTERISTICS Maximum Continuous Source−to− Drain Diode Forward Current IS Maximum Pulsed Source−to−Drain Diode Forward Current ISM Source−to−Drain Diode Forward Voltage VSD Reverse Recovery Time trr Charge Time ta Discharge Time tb Reverse Recovery Charge Qrr VGS = 0 V VGS = 0 V VGS = 0 V, ISD = 29 A 133 VGS = 0 V, dIF/dt = 100 A/ms, ISD = 29 A 58 A 145 A 1.3 V ns 106 27 603 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NVH050N65S3F TYPICAL CHARACTERISTICS 200 200 VGS = 10 V 8.0 V 5.5 V 10 200 5.5 V 10 1 0.2 VDS, DRAIN−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. On−Region Characteristics TJ = 150°C 10 TJ = −55°C 3 4 5 6 7 8 VGS, GATE−TO−SOURCE VOLTAGE (V) 80 TC = 25°C 60 VGS = 10 V 40 20 VGS = 20 V 0 40 60 80 100 120 140 160 180 Figure 4. On−Resistance Variation vs. Drain Current and Gate Voltage 100K 1000 250 ms Pulse Test 100 VGS = 0 V 10 10K CAPACITANCE (pF) IS, REVERSE DRAIN CURRENT (A) 20 ID, DRAIN CURRENT (A) Figure 3. Transfer Characteristics TJ = 150°C 1 TJ = 25°C 0.1 Ciss 1K Coss 100 10 0.01 0.001 20 2.0 VDS, DRAIN−SOURCE VOLTAGE (V) TJ = 25°C 1 6.0 V 20 2.0 VGS = 10 V 8.0 V 7.0 V 6.5 V 250 ms Pulse Test TC = 25°C 250 ms Pulse Test VDS = 20 V 100 ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 6.0 V 1 0.2 250 ms Pulse Test TC = 150°C 100 7.0 V 6.5 V RDS(ON), DRAIN−SOURCE ON−RESISTANCE (W) ID, DRAIN CURRENT (A) 100 TJ = −55°C 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 1 2.0 f = 1 MHz VGS = 0 V 0.1 Crss 1 10 100 VSD, BODY DIODE FORWARD VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 6. Capacitance Characteristics www.onsemi.com 4 NVH050N65S3F VDD = 130 V ID = 29 A 8 VDD = 400 V 6 4 2 0 0 3.0 52 26 104 78 130 1.1 1.0 0.9 0.8 −75 −50 −25 0 25 50 100 125 150 175 75 Figure 7. Gate Charge Characteristics Figure 8. Breakdown Voltage Variation vs. Temperature 200 100 2.0 1.5 1.0 0.5 0 −75 −50 −25 0 25 50 75 100 125 150 100 ms 10 1 ms 10 ms Operation in this Area is Limited by RDS(ON) 1 100 ms 0.1 0.01 175 TC = 25°C TJ = 150°C Single Pulse 1 10 100 1K TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−SOURCE VOLTAGE (V) Figure 9. On−Resistance Variation vs. Temperature Figure 10. Maximum Safe Operating Area 70 30 60 24 50 Eoss (mJ) ID, DRAIN CURRENT (A) VGS = 0 V ID = 10 mA TJ, JUNCTION TEMPERATURE (°C) VGS = 10 V ID = 29 A 2.5 1.2 Qg, TOTAL GATE CHARGE (nC) ID, DRAIN CURRENT (A) RDS(ON), DRAIN−SOURCE ON−RESISTANCE (Normalized) VGS, GATE−SOURCE VOLTAGE (V) 10 BVDSS, DRAIN−SOURCE BREAKDOWN VOLTAGE (Normalized) TYPICAL CHARACTERISTICS 40 30 18 12 20 6 10 0 25 50 75 100 125 0 150 0 100 200 300 400 500 600 TC, CASE TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Drain Current vs. Case Temperature Figure 12. EOSS vs. Drain−to−Source Voltage www.onsemi.com 5 NVH050N65S3F 250 1.2 NORMALIZED GATE THRESHOLD VOLTAGE RDS(ON), DRAIN−SOURCE ON−RESISTANCE (mW) TYPICAL CHARACTERISTICS 200 150 TA = 150°C 100 50 0 TA = 25°C Pulse Duration = 250 ms Duty Cycle = 0.5% Max ID = 29 A 5 6 7 8 9 VGS = VDS ID = 1.7 mA 1.0 0.8 0.6 −80 10 −40 0 40 80 120 160 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 13. RDS(ON) vs. Gate Voltage Figure 14. Normalized Gate Threshold Voltage vs. Temperature IAS AVALANCHE CURRENT (A) 100 10 TJ(initial) = 25°C TJ(initial) = 100°C 1 1E−06 1E−05 1E−04 1E−03 1E−02 1E−01 1E+00 tAV, TIME IN AVALANCHE (sec) r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE Figure 15. Unclamped Inductive Switching Capability 10 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 PDM 0.01 0.01 t1 Single Pulse 0.001 0.00001 0.0001 0.001 t2 0.01 t, RECTANGULAR PULSE DURATION (s) Figure 16. Transient Thermal Response Curve SUPERFET and FRFET are registered trademarks of Semiconductor Components Industries, LLC. www.onsemi.com 6 ZqJC(t) = r(t) x RqJC RqJC = 0.31°C/W Peak TJ = PDM x ZqJC(t) + TC Duty Cycle, D = t1 / t2 0.1 1 NVH050N65S3F PACKAGE DIMENSIONS TO−247−3LD SHORT LEAD CASE 340CK ISSUE A A A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S www.onsemi.com 7 MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 NVH050N65S3F ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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