NVH4L018N075SC1

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 13.5 mohm, 750V, M2, TO-247-4L V(BR)DSS RDS(ON) MAX ID MAX 750 V 18 m @ 18 V 140 A D NVH4L018N075SC1 Features • Typ. RDS(on) = 13.5 m @ VGS = 18 V • • • • • G Typ. RDS(on) = 18 m @ VGS = 15 V Ultra Low Gate Charge (QG(tot) = 262 nC) High Speed Switching with Low Capacitance (Coss = 365 pF) 100% Avalanche Tested AEC−Q101 Qualified and PPAP Capable This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications TO247−4L CASE 340CJ MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol MARKING DIAGRAM Value Unit Drain−to−Source Voltage VDSS 750 V Gate−to−Source Voltage VGS −8/+22 V Recommended Operation Values of Gate−to−Source Voltage TC < 175°C VGSop −5/+18 V Steady State TC = 25°C ID 140 A PD 500 W ID 99 A PD 250 W IDM 483 A IDSC 807 A TJ, Tstg −55 to +175 °C IS 108 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 18 A, L = 1 mH) (Note 3) EAS 162 mJ Maximum Lead Temperature for Soldering (1/8″ from case for 5 s) TL 300 °C Continuous Drain Current (Note 1) Power Dissipation (Note 1) Continuous Drain Current (Note 1) Steady State TC = 100°C Power Dissipation (Notes 1) Pulsed Drain Current (Note 2) TC = 25°C Single Pulse Surge TA = 25°C, tp = 10 s, Drain Current Capability RG = 4.7  Operating Junction and Storage Temperature Range Source Current (Body Diode) N−CHANNEL MOSFET D S2 S1 G • Automotive On Board Charger • Automotive DC-DC Converter for EV/HEV • Automotive Traction Inverter Parameter S2 S1 S1: Driver Source S2: Power Source H4L018 N075SC AYWWZZ H4L018N075SC = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability ORDERING INFORMATION Device Package Shipping NVH4L018N075SC1 TO247−4L 30 Units / Tube Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Repetitive rating, limited by max junction temperature. 3. EAS of 162 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 18 A, VDD = 50 V, VGS = 18 V. © Semiconductor Components Industries, LLC, 2021 May, 2022 − Rev. 4 1 Publication Order Number: NVH4L018N075SC1/D NVH4L018N075SC1 Table 1. THERMAL RESISTANCE MAXIMUM RATINGS Symbol Max Unit Junction−to−Case − Steady State (Note 4) Parameter RJC 0.3 °C/W Junction−to−Ambient − Steady State (Notes 4) RJA 40 4. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit 750 − − V ID = 1 mA, referenced to 25°C − 0.06 − V/°C VGS = 0 V, VDS = 750 V TJ = 25°C − − 10 A TJ = 175°C − − 1 mA VGS = +18/−5 V, VDS = 0 V − − 250 nA VGS = VDS, ID = 22 mA 1.8 2.7 4.3 V −5 − +18 V VGS = 15 V, ID = 66 A, TJ = 25°C − 18 VGS = 18 V, ID = 66 A, TJ = 25°C − 13.5 OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS IGSS VGS = 0 V, ID = 1 mA ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Recommended Gate Voltage Drain−to−Source On Resistance VGS(TH) VGOP RDS(on) VGS = 18 V, ID = 66 A, TJ = 175°C Forward Transconductance gFS m 18 19 VDS = 10 V, ID = 66 A − 40 − S VGS = 0 V, f = 1 MHz, VDS = 375 V − 5010 − pF CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS − 365 − Reverse Transfer Capacitance CRSS − 31 − − 262 − − 75 − − 72 − f = 1 MHz − 1.6 −  VGS = −5/18 V, VDS = 400 V, ID = 66 A, RG = 2.2  Inductive load − 24 − ns − 24 − Total Gate Charge QG(TOT) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Gate−Resistance RG VGS = −5/18 V, VDS = 600 V, ID = 66 A nC SWITCHING CHARACTERISTICS, VGS = 10 V Turn−On Delay Time Rise Time Turn−Off Delay Time td(ON) tr td(OFF) − 46 − tf − 9.6 − Turn−On Switching Loss EON − 144 − Turn−Off Switching Loss EOFF − 207 − Etot − 351 − − − 108 − − 483 − 4.5 − Fall Time Total Switching Loss J SOURCE−DRAIN DIODE CHARACTERISTICS Continuous Source−Drain Diode Forward Current ISD Pulsed Drain−Source Diode Forward Current (Note 2) ISDM Forward Diode Voltage VSD VGS = −5 V, TJ = 25°C VGS = −5 V, ISD = 66 A, TJ = 25°C www.onsemi.com 2 A V NVH4L018N075SC1 Table 2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter Symbol Test Condition Min Typ Max Unit − 28 − ns − 221 − nC SOURCE−DRAIN DIODE CHARACTERISTICS Reverse Recovery Time tRR VGS = −5/18 V, ISD = 66 A, dIS/dt = 1000 A/s Reverse Recovery Charge QRR Reverse Recovery Energy EREC − 19 − J Peak Reverse Recovery Current IRRM − 16 − A Charge Time Ta − 17 − ns Discharge Time Tb − 11 − ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NVH4L018N075SC1 TYPICAL CHARACTERISTICS 280 15 V 200 RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE 240 ID, DRAIN CURRENT (A) 4 VGS = 18 V 12 V 160 120 10 V 80 9V 40 8V 0 0 2 4 6 8 15 V 1 18 V 0 40 80 120 160 200 VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 150 RDS(on), ON−RESISTANCE (m) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE ID = 66 A VGS = 18 V 1.4 1.2 1.0 −75 −50 −25 0 25 50 75 120 90 60 30 100 125 150 175 TJ = 150°C TJ = 25°C 3 6 9 12 15 TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance Variation with Temperature Figure 4. On−Resistance vs. Gate−to−Source Voltage 18 280 IS, REVERSE DRAIN CURRENT (A) VDS = 10 V 240 200 160 120 TJ = 175°C TJ = 25°C 80 TJ = −55°C 40 0 ID = 66 A 0 280 ID, DRAIN CURRENT (A) VGS = 12 V 2 0 10 1.6 0.8 3 0 4 8 12 16 VGS = −5 V 100 TJ = 175°C TJ = 25°C 10 TJ = −55°C 1 2 4 6 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Diode Forward Voltage vs. Current www.onsemi.com 4 8 NVH4L018N075SC1 20 10000 ID = 66 A Ciss VDD = 450 V 15 VDD = 750 V CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS (continued) 10 VDD = 600 V 5 0 −5 0 50 100 150 200 250 100 10 0.1 300 Crss 1 10 100 Qg, GATE CHARGE (nC) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Gate−to−Source Voltage vs. Total Charge Figure 8. Capacitance vs. Drain−to−Source Voltage 750 150 ID, DRAIN CURRENT (A) 120 10 0.01 0.1 30 25 50 75 100 125 150 TC, CASE TEMPERATURE (°C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature 100 100 s 10 1 ms Single Pulse TJ = Max Rated RJC = 0.3°C/W TC = 25°C 0.1 60 tAV, TIME IN AVALANCHE (ms) 10 s 0.1 90 0 1 1000 1 VGS = 18 V RJC = 0.30°C/W 1 0.001 10 ms DC 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) P(PK), PEAK TRANSIENT POWER (w) IAS, AVALANCHE CURRENT (A) Coss f = 1 MHz VGS = 0 V 100 ID, DRAIN CURRENT (A) 1000 1000 100000 Single Pulse RJC = 0.30°C/W TC = 25°C 10000 1000 100 0.00001 0.0001 0.001 0.01 0.1 t, PULSE WIDTH (sec) Figure 11. Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 175 1 NVH4L018N075SC1 TYPICAL CHARACTERISTICS (continued) ZJC(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 50% Duty Cycle 0.1 20% 10% 5% 0.01 2% 1% Notes: RJC = 0.30°C/W Duty Cycle, D = t1/t2 P DM Single Pulse t1 t2 0.001 0.00001 0.0001 0.001 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction−to−Case Thermal Response www.onsemi.com 6 0.01 0.1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−4LD CASE 340CJ ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13852G TO−247−4LD DATE 16 SEP 2019 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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