NVH4L020N120SC1

MOSFET - SiC Power, Single N-Channel, TO247-4L 1200 V, 20 mW, 102 A NVH4L020N120SC1 Features • • • • • • Typ. RDS(on) = 20 m Ultra Low Gate Charge (QG(tot) = 220 nC) High Speed Switching with Low Capacitance (Coss = 258 pF) 100% Avalanche Tested AEC−Q101 Qualified and PPAP Capable This Device is Pb−Free and is RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 1200 V 28 m @ 20 V 102 A D Typical Applications • Automotive On Board Charger • Automotive DC/DC Converter for EV/HEV • Automotive Traction Inverter G S1: Kelvin Source S2: Power Source MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit S1 S2 Drain−to−Source Voltage VDSS 1200 V N−CHANNEL MOSFET Gate−to−Source Voltage VGS −15/+25 V Parameter Recommended Operation Values of Gate−to−Source Voltage TC < 175°C VGSop −5/+20 V Steady State TC = 25°C ID 102 A PD 510 W ID 84 A PD 255 W IDM 408 A IDSC 807 A TJ, Tstg −55 to +175 °C Continuous Drain Current (Note 2) Power Dissipation (Note 2) Continuous Drain Current (Notes 1, 2) Steady State TC = 100°C Power Dissipation (Notes 1, 2) Pulsed Drain Current (Note 3) TA = 25°C Single Pulse Surge TA = 25°C, tp = 10 s, Drain Current Capability RG = 4.7  Operating Junction and Storage Temperature Range Source Current (Body Diode) IS 46 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 23 A, L = 1 mH) (Note 4) EAS 264 mJ Maximum Lead Temperature for Soldering (1/8″ from case for 5 s) TL 300 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. JA is constant value to follow guide table of LV/HV discrete final datasheet generation. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 3. Repetitive rating, limited by max junction temperature. 4. EAS of 264 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 23 A, VDD = 120 V, VGS = 18 V. © Semiconductor Components Industries, LLC, 2019 May, 2021 − Rev. 3 1 D S2 S1 G TO247−4L CASE 340CJ MARKING DIAGRAM AYWWZZ NVH4L020 N120SC1 A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability NVH4L020N120SC1 = Specific Device Code ORDERING INFORMATION Device Package Shipping NVH4L020N120SC1 TO247−4L 30 ea / Tube Publication Order Number: NVH4L020N120SC1/D NVH4L020N120SC1 THERMAL RESISTANCE MAXIMUM RATINGS Symbol Max Unit Junction−to−Case − Steady State (Note 2) Parameter RJC 0.3 °C/W Junction−to−Ambient − Steady State (Notes 1, 2) RJA 40 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit 1200 − − V ID = 1 mA, referenced to 25°C − 0.5 − V/°C VGS = 0 V, VDS = 1200 V TJ = 25°C − − 100 A TJ = 175°C − − 1 mA VGS = +25/−15 V, VDS = 0 V − − ±1 A VGS = VDS, ID = 20 mA 1.8 2.7 4.3 V −5 − +20 V VGS = 20 V, ID = 60 A, TJ = 25°C − 20 28 m VGS = 20 V, ID = 60 A, TJ = 175°C − 37 50 VDS = 20 V, ID = 60 A − 36 − S VGS = 0 V, f = 1 MHz, VDS = 800 V − 2943 − pF − 258 − − 24 − − 220 − − 33 − OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS IGSS VGS = 0 V, ID = 1 mA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Recommended Gate Voltage Drain−to−Source On Resistance Forward Transconductance VGS(TH) VGOP RDS(on) gFS CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS VGS = −5/20 V, VDS = 600 V, ID = 80 A nC Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS − 66 − Gate−to−Drain Charge QGD − 63 − Gate−Resistance RG f = 1 MHz − 1.6 −  VGS = −5/20 V, VDS = 800 V, ID = 80 A, RG = 2  inductive load − 21.6 35 ns − 21 34 − 41 66 tf − 10 20 Turn−On Switching Loss EON − 494 − Turn−Off Switching Loss EOFF − 397 − Etot − 891 − − − 46 − − 408 − 3.7 − SWITCHING CHARACTERISTICS, VGS = 10 V Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Total Switching Loss td(ON) tr td(OFF) J DRAIN−SOURCE DIODE CHARACTERISTICS Continuous Drain−Source Diode Forward Current ISD Pulsed Drain−Source Diode Forward Current (Note 3) ISDM Forward Diode Voltage VSD VGS = −5 V, TJ = 25°C VGS = −5 V, ISD = 30 A, TJ = 25°C www.onsemi.com 2 A V NVH4L020N120SC1 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter Symbol Test Condition Min Typ Max Unit − 30 − ns − 225 − nC DRAIN−SOURCE DIODE CHARACTERISTICS Reverse Recovery Time tRR VGS = −5/20 V, ISD = 80 A, dIS/dt = 1000 A/s Reverse Recovery Charge QRR Reverse Recovery Energy EREC − 16 − J Peak Reverse Recovery Current IRRM − 15 − A Charge time Ta − 16 − ns Discharge time Tb − 15 − ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NVH4L020N120SC1 TYPICAL CHARACTERISTICS 2.5 VGS = 20 V RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE ID, DRAIN CURRENT (A) 250 16 V 200 19 V 150 18 V 17 V 100 50 0 0 4 2 6 8 10 17 V 19 V 1.5 20 V 1.0 0.5 0 100 50 150 200 250 ID, DRAIN CURRENT (A) Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 160 RDS(on), ON−RESISTANCE (m) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE ID = 60 A VGS = 20 V 1.7 1.5 1.3 1.1 0.9 0.7 −75 −50 −25 0 25 50 75 ID = 60 A 120 80 100 125 150 175 TJ = 150°C 40 0 TJ = 25°C 5 10 20 15 TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance Variation with Temperature Figure 4. On−Resistance vs. Gate−to−Source Voltage 120 IS, REVERSE DRAIN CURRENT (A) 300 VDS = 20 V ID, DRAIN CURRENT (A) 2.0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.9 100 80 60 40 TJ = 25°C 20 0 VGS = 16 V 18 V TJ = 175°C 2 4 TJ = −55°C 6 8 10 12 14 16 VGS = −5 V TJ = 25°C 30 TJ = 175°C 3 TJ = −55°C 1 2 3 4 5 6 7 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Diode Forward Voltage vs. Current www.onsemi.com 4 8 NVH4L020N120SC1 20 100K VDD = 400 V ID = 80 A 10K VDD = 800 V 15 10 CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS VDD = 600 V 5 50 0 100 150 200 1 10 100 Figure 8. Capacitance vs. Drain−to−Source Voltage 800 120 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) 0.1 Figure 7. Gate−to−Source Voltage vs. Total Charge TJ = 150°C 0.001 0.01 0.1 1 100 80 10 VGS = 20 V 60 40 20 0 RJC = 0.30°C/W 75 50 25 100 150 TC, CASE TEMPERATURE (°C) Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature P(PK), PEAK TRANSIENT POWER (w) 100K 100 10 s 10 100 s 1 ms 10 ms 100 ms 1 Single Pulse TJ = Max Rated RJC = 0.3°C/W TC = 25°C 0.1 125 tAV, TIME IN AVALANCHE (ms) 1000 ID, DRAIN CURRENT (A) f = 1 MHz VGS = 0 V VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10 0.01 Crss Qg, GATE CHARGE (nC) TJ = 25°C 0.1 Coss 100 1 250 100 1 1K 10 0 −5 Ciss 1 10 100 1K 5K Single Pulse RJC = 0.30°C/W TC = 25°C 10K 1K 100 0.00001 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 175 0.1 NVH4L020N120SC1 r(t). NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) TYPICAL CHARACTERISTICS 2 1 50% Duty Cycle 20% 10% 0.1 5% 2% 1% 0.01 Single Pulse P DM t1 t2 0.001 0.00001 0.0001 0.001 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction−to−Ambient Thermal Response www.onsemi.com 6 Notes: ZJC (t) = r(t) x RJC RJC = 0.30°C/W Peak TJ = PDM x ZJC (t) + TC Duty Cycle, D = t1/t2 0.01 0.1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−4LD CASE 340CJ ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13852G TO−247−4LD DATE 16 SEP 2019 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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