NVH4L045N065SC1

DATA SHEET www.onsemi.com Silicon Carbide (SiC) MOSFET – 33 mohm, 650V,M2, TO-247-4L V(BR)DSS RDS(ON) MAX ID MAX 650 V 50 m @ 18 V 55 A D NVH4L045N065SC1 Features G • Typ. RDS(on) = 33 m @ VGS = 18 V • • • • • Typ. RDS(on) = 45 m @ VGS = 15 V Ultra Low Gate Charge (QG(tot) = 105 nC) High Speed Switching with Low Capacitance (Coss = 162 pF) 100% Avalanche Tested AEC−Q101 Qualified and PPAP Capable This Device is Halide Free and RoHS Compliant with exemption 7a, Pb−Free 2LI (on second level interconnection) Typical Applications S1: Kelvin Source S2: Power Source S1 S2 N−CHANNEL MOSFET D S2 S1 G • Automotive On Board Charger • Automotive DC−DC Converter for EV/HEV TO247−4L CASE 340CJ MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Symbol Value Unit VDSS 650 V VGS −8/+22 V Recommended Operation Values of Gate−to−Source Voltage TC < 175°C VGSop −5/+18 V Steady State TC = 25°C ID 55 A PD 187 W ID 39 A PD 94 W IDM 197 A IDSC 315 A TJ, Tstg −55 to +175 °C IS 45 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 12 A, L = 1 mH) (Note 4) EAS 72 mJ Maximum Lead Temperature for Soldering (1/8″ from case for 5 s) TL 300 °C Continuous Drain Current (Note 2) Power Dissipation (Note 2) Continuous Drain Current (Notes 1, 2) Steady State TC = 100°C Power Dissipation (Notes 1, 2) Pulsed Drain Current (Note 3) TC = 25°C Single Pulse Surge TA = 25°C, tp = 10 s, Drain Current Capability RG = 4.7  Operating Junction and Storage Temperature Range Source Current (Body Diode) MARKING DIAGRAM H4L045 065SC1 AYWWZZ H4L045065SC1 = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Lot Traceability ORDERING INFORMATION Device Package Shipping NVH4L045N065SC1 TO247−4L 30 Units / Tube Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. JA is constant value to follow guide table of LV/HV discrete final datasheet generation. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 3. Repetitive rating, limited by max junction temperature. 4. EAS of 72 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 12 A, VDD = 50 V, VGS = 18 V. © Semiconductor Components Industries, LLC, 2021 April, 2022 − Rev. 1 1 Publication Order Number: NVH4L045N065SC1/D NVH4L045N065SC1 THERMAL RESISTANCE MAXIMUM RATINGS Symbol Max Unit Junction−to−Case − Steady State (Note 2) Parameter RJC 0.8 °C/W Junction−to−Ambient − Steady State (Notes 1, 2) RJA 40 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit 650 − − V ID = 20 mA, referenced to 25°C − 0.15 − V/°C VGS = 0 V, VDS = 650 V TJ = 25°C − − 10 A TJ = 175°C − − 1 mA − − 250 nA 1.8 2.8 4.3 V −5 − +18 V VGS = 15 V, ID = 25 A, TJ = 25°C − 45 − m VGS = 18 V, ID = 25 A, TJ = 25°C − 33 50 VGS = 18 V, ID = 25 A, TJ = 175°C − 41 − VDS = 10 V, ID = 25 A − 16 − S VGS = 0 V, f = 1 MHz, VDS = 325 V − 1870 − pF OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS IGSS VGS = 0 V, ID = 1 mA VGS = +18/−5 V, VDS = 0 V ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Recommended Gate Voltage Drain−to−Source On Resistance Forward Transconductance VGS(TH) VGS = VDS, ID = 8 mA VGOP RDS(on) gFS CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS − 162 − Reverse Transfer Capacitance CRSS − 14 − − 105 − − 27 − − 30 − f = 1 MHz − 3.1 −  VGS = −5/18 V, VDS = 400 V, ID = 25 A, RG = 2.2  inductive load − 13 − ns − 14 − − 26 − tf − 7 − Turn−On Switching Loss EON − 47 − Turn−Off Switching Loss EOFF − 33 − Etot − 80 − − − 45 − − 197 − 4.4 − Total Gate Charge QG(TOT) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Gate−Resistance RG VGS = −5/18 V, VDS = 520 V, ID = 25 A nC SWITCHING CHARACTERISTICS, VGS = 10 V Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Total Switching Loss td(ON) tr td(OFF) J DRAIN−SOURCE DIODE CHARACTERISTICS Continuous Drain−Source Diode Forward Current ISD Pulsed Drain−Source Diode Forward Current (Note 3) ISDM Forward Diode Voltage VSD VGS = −5 V, TJ = 25°C VGS = −5 V, ISD = 25 A, TJ = 25°C www.onsemi.com 2 A V NVH4L045N065SC1 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) (continued) Parameter Symbol Test Condition Min Typ Max Unit − 20 − ns − 108 − nC DRAIN−SOURCE DIODE CHARACTERISTICS VGS = −5/18 V, ISD = 25 A, dIS/dt = 1000 A/s Reverse Recovery Time tRR Reverse Recovery Charge QRR Reverse Recovery Energy EREC − 4.5 − J Peak Reverse Recovery Current IRRM − 11 − A Charge Time Ta − 11 − ns Discharge Time Tb − 8.5 − ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 3 NVH4L045N065SC1 TYPICAL CHARACTERISTICS 4 VGS = 18 V RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE ID, DRAIN CURRENT (A) 120 15 V 100 80 12 V 60 40 10 V 9V 20 0 8V 0 1 2 3 4 5 6 7 8 9 0 10 20 30 40 50 60 70 Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 80 140 RDS(on), ON−RESISTANCE (m) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 18 V 1 ID, DRAIN CURRENT (A) 1.2 1.1 1 0.9 −75 −50 −25 0 25 50 75 100 TJ = 25°C 80 TJ = 150°C 60 40 20 7 8 9 10 11 12 13 14 15 16 17 TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance Variation with Temperature Figure 4. On−Resistance vs. Gate−to−Source Voltage IS, REVERSE DRAIN CURRENT (A) VDS = 10 V 100 80 TJ = 25°C 60 TJ = 175°C 40 20 TJ = −55°C 3 ID = 25 A 120 0 100 125 150 175 120 ID, DRAIN CURRENT (A) 15 V VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID = 25 A VGS = 18 V 1.3 0 VGS = 12 V 2 0 10 1.4 0.8 3 6 9 12 15 120 100 VGS = −5 V TJ = 175°C TJ = 25°C 10 TJ = −55°C 1 2 3 4 5 6 7 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Diode Forward Voltage vs. Current www.onsemi.com 4 18 8 NVH4L045N065SC1 20 10000 ID = 25 A VDD = 390 V Ciss 15 CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS (continued) VDD = 520 V 10 VDD = 650 V 5 0 −5 0 20 40 60 80 100 1000 Coss 100 Crss 10 1 0.1 120 Qg, GATE CHARGE (nC) 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 7. Gate−to−Source Voltage vs. Total Charge Figure 8. Capacitance vs. Drain−to−Source Voltage VGS = 18 V ID, DRAIN CURRENT (A) TJ = 25°C 10 50 40 30 20 10 RJC = 0.8°C/W 1 0.001 0.01 0.1 tAV, TIME IN AVALANCHE (ms) 0 1 25 50 10 s 100 100 s 1 ms 1 0.1 Single Pulse TJ = 175°C RJC = 0.8°C/W TC = 25°C 0.1 100 125 150 175 10 ms DC 1 10 100 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 10. Maximum Continuous Drain Current vs. Case Temperature P(PK), PEAK TRANSIENT POWER (W) 300 10 75 TC, CASE TEMPERATURE (°C) Figure 9. Unclamped Inductive Switching Capability ID, DRAIN CURRENT (A) 650 60 100 IAS, AVALANCHE CURRENT (A) f = 1 MHz VGS = 0 V 1000 20000 Single Pulse RJC = 0.8°C/W TC = 25°C 10000 1000 100 0.00001 0.0001 0.001 0.01 0.1 t, PULSE WIDTH (sec) Figure 11. Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 5 1 NVH4L045N065SC1 TYPICAL CHARACTERISTICS (continued) 1 ZJC(t). EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) 0.5 Duty Cycle 0.2 0.1 0.1 0.05 0.02 0.01 0.01 Notes: RJC = 0.8°C/W Duty Cycle, D = t1/t2 P DM Single Pulse t1 t2 0.001 0.00001 0.0001 0.001 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction−to−Case Thermal Response www.onsemi.com 6 0.01 0.1 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−4LD CASE 340CJ ISSUE A DOCUMENT NUMBER: DESCRIPTION: 98AON13852G TO−247−4LD DATE 16 SEP 2019 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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