DATA SHEET
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Silicon Carbide (SiC)
MOSFET – 20 mohm,
1200V, M1, TO-247-3L
V(BR)DSS
RDS(on) MAX
ID MAX
1200 V
28 m @ 20 V
103 A
N−CHANNEL MOSFET
NVHL020N120SC1
D
Features
•
•
•
•
•
•
Typ. RDS(on) = 20 m
Ultra Low Gate Charge (typ. QG(tot) = 203 nC)
Low Effective Output Capacitance (typ. Coss = 260 pF)
100% UIL Tested
AEC−Q101 Qualified and PPAP Capable
This Device is Halide Free and RoHS Compliant with exemption 7a,
Pb−Free 2LI (on second level interconnection)
G
S
Typical Applications
• Automotive On Board Charger
• Automotive DC−DC converter for EV/HEV
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Recommended Operation Values of Gate−to−
Source Voltage
TC < 175°C
Continuous Drain
Current RJC
Steady
State
TC = 25°C
Value
Unit
VDSS
1200
V
VGS
−15/+25
V
VGSop
−5/+20
V
ID
103
A
PD
535
W
Steady TC = 100°C
State
ID
73
A
PD
267
W
TA = 25°C
IDM
412
A
IDSC
807
A
TJ, Tstg
−55 to
+175
°C
Power Dissipation RJC
Continuous Drain
Current RJC
G
Symbol
Power Dissipation RJC
Pulsed Drain Current
(Note 2)
Single Pulse Surge Drain TA = 25°C, tp = 10 s,
Current Capability
RG = 4.7
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 23 A, L = 1 mH) (Note 3)
IS
54
A
EAS
264
mJ
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case (Note 1)
RJC
0.28
°C/W
Junction−to−Ambient (Note 1)
RJA
40
°C/W
D
S
TO−247−3LD
CASE 340CX
MARKING DIAGRAM
$Y&Z&3&K
NVHL020
N120SC1
$Y
= onsemi Logo
&Z
= Assembly Plant Code
&3
= Data Code (Year & Week)
&K
= Lot
NVHL020N120SC1 = Specific Device Code
ORDERING INFORMATION
Device
Package
Shipping
NVHL020N120SC1
TO247−3L
30 Units /
Tube
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Repetitive rating, limited by max junction temperature.
3. EAS of 264 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 23 A,
VDD = 120 V, VGS = 18 V.
© Semiconductor Components Industries, LLC, 2018
May, 2022 − Rev. 1
1
Publication Order Number:
NVHL020N120SC1/D
NVHL020N120SC1
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
1200
−
−
V
ID = 1 mA, referenced to 25_C
−
900
−
mV/_C
VGS = 0 V, VDS = 1200 V, TJ = 25_C
−
−
100
A
VGS = 0 V, VDS = 1200 V, TJ = 175_C
−
−
250
VGS = +25/−15 V, VDS = 0 V
−
−
±1
A
1.8
2.7
4.3
V
−5
−
+20
V
VGS = 20 V, ID = 60 A, TJ = 25_C
−
20
28
m
VGS = 20 V, ID = 60 A, TJ = 175_C
−
35
50
VDS = 10 V, ID = 60 A
−
28
−
S
VGS = 0 V, f = 1 MHz, VDS = 800 V
−
2890
−
pF
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
V(BR)DSS
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
IGSS
VGS = 0 V, ID = 1 mA
ON CHARACTERISTICS
Gate Threshold Voltage
VGS(th)
Recommended Gate Voltage
VGOP
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
gFS
VGS = VDS, ID = 20 mA
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
−
260
−
Reverse Transfer Capacitance
CRSS
−
22
−
Total Gate Charge
QG(tot)
−
203
−
Threshold Gate Charge
QG(th)
−
33
−
Gate−to−Source Charge
QGS
−
66
−
Gate−to−Drain Charge
QGD
−
47
−
f = 1 MHz
−
1.81
−
VGS = −5/20 V, VDS = 800 V,
ID = 80 A, RG = 2 ,
Inductive Load
−
25
−
ns
−
57
−
td(off)
−
45
−
tf
−
11
−
Turn-On Switching Loss
EON
−
2718
−
Turn-Off Switching Loss
EOFF
−
326
−
Total Switching Loss
ETOT
−
3040
−
Gate Resistance
RG
VGS = −5/20 V, VDS = 600 V, ID = 80 A
nC
SWITCHING CHARACTERISTICS
Turn-On Delay Time
td(on)
Rise Time
Turn−Off Delay Time
tr
Fall Time
J
DRAIN−SOURCE DIODE CHARACTERISTICS
ISD
VGS = −5 V, TJ = 25_C
−
−
54
A
Pulsed Drain−to−Source Diode
Forward Current (Note 2)
ISDM
VGS = −5 V, TJ = 25_C
−
−
412
A
Forward Diode Voltage
VSD
VGS = −5 V, ISD = 30 A, TJ = 25_C
−
3.7
−
V
Reverse Recovery Time
tRR
−
31
−
ns
Reverse Recovery Charge
QRR
VGS = −5/20 V, ISD = 80 A,
dIS/dt = 1000 A/s
−
240
−
nC
Reverse Recovery Energy
EREC
−
10
−
J
Peak Reverse Recovery Current
IRRM
−
15
−
A
Continuous Drain−to−Source Diode
Forward Current
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NVHL020N120SC1
TYPICAL CHARACTERISTICS
2.5
VGS = 20 V
RDS(on), NORMALIZED DRAIN−TO−
SOURCE ON−RESISTANCE
ID, DRAIN CURRENT (A)
250
16 V
200
19 V
150
18 V
17 V
100
50
0
0
4
2
6
8
10
18 V
19 V
1.5
VGS = 20 V
1.0
0.5
0
100
50
200
150
250
ID, DRAIN CURRENT (A)
Figure 1. On−Region Characteristics
Figure 2. Normalized On−Resistance vs. Drain
Current and Gate Voltage
160
RDS(on), ON−RESISTANCE (m)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
ID = 60 A
VGS = 20 V
1.7
1.5
1.3
1.1
0.9
0.7
−75 −50 −25
0
25
50
75
ID = 60 A
120
80
100 125 150 175
TJ = 150°C
40
0
TJ = 25°C
5
10
20
15
TJ, JUNCTION TEMPERATURE (°C)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 3. On−Resistance Variation with
Temperature
Figure 4. On−Resistance vs. Gate−to−Source
Voltage
120
IS, REVERSE DRAIN CURRENT (A)
300
VDS = 20 V
ID, DRAIN CURRENT (A)
17 V
2.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1.9
100
80
60
40
TJ = 25°C
TJ = 175°C
20
0
VGS = 16 V
TJ = −55°C
2
4
6
8
10
12
14
16
VGS = −5 V
TJ = 25°C
30
3
TJ = −55°C
TJ = 175°C
1
2
3
4
5
6
7
VGS, GATE−TO−SOURCE VOLTAGE (V)
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics
Figure 6. Diode Forward Voltage vs. Current
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3
8
NVHL020N120SC1
100K
20
VDD = 400 V
ID = 80 A
VDD = 800 V
15
10
10K
CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS (continued)
VDD = 600 V
5
0
50
100
150
200
1
10
100
Figure 8. Capacitance vs. Drain−to−Source
Voltage
800
120
ID, DRAIN CURRENT (A)
TJ = 150°C
10
Typical performance based
on characterization data
0.001
0.01
0.1
1
100
10
100
80
VGS = 20 V
60
40
20
0
RJC = 0.28°C/W
25
50
75
100
TC, CASE TEMPERATURE (°C)
Figure 9. Unclamped Inductive Switching
Capability
Figure 10. Maximum Continuous Drain
Current vs. Case Temperature
100K
100
10 s
This area is
limited by RDS(on)
10
Single Pulse
TJ = Max Rated
RJC = 0.28°C/W
TC = 25°C
0.1
150
125
tAV, TIME IN AVALANCHE (ms)
P(PK), PEAK TRANSIENT POWER (w)
IAS, AVALANCHE CURRENT (A)
0.1
Figure 7. Gate−to−Source Voltage vs. Total
Charge
1000
ID, DRAIN CURRENT (A)
f = 1 MHz
VGS = 0 V
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TJ = 25°C
0.1
Crss
Qg, GATE CHARGE (nC)
100
1
Coss
100
1
250
1000
1
1K
10
0
−5
Ciss
1
100 s
1 ms
Curve bent to
measured data
10
100
10 ms
100 ms
1K
5K
Single Pulse
RJC = 0.28°C/W
TC = 25°C
10K
1K
100
0.00001
0.0001
0.001
0.01
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
t, PULSE WIDTH (sec)
Figure 11. Safe Operating Area
Figure 12. Single Pulse Maximum Power
Dissipation
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4
175
0.1
NVHL020N120SC1
r(t). NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W)
TYPICAL CHARACTERISTICS (continued)
2
1
50% Duty Cycle
20%
10%
0.1 5%
2%
1%
0.01
P DM
Single Pulse
t1
t2
0.001
0.00001
0.0001
0.001
t, RECTANGULAR PULSE DURATION (sec)
Figure 13. Junction−to−Ambient Thermal Response
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5
Notes:
ZJC (t) = r(t) x RJC
RJC = 0.28°C/W
Peak TJ = PDM x ZJC (t) + TC
Duty Cycle, D = t1/t2
0.01
0.1
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
DOCUMENT NUMBER:
DESCRIPTION:
XXXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
98AON93302G
TO−247−3LD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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