NVHL025N65S3
MOSFET – Power,
N-Channel, Automotive
SUPERFET) III, Easy-drive
650 V, 75 A, 25 mW
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Description
SuperFET III MOSFET is ON Semiconductor’s brand−new high
voltage super−junction (SJ) MOSFET family that is utilizing charge
balance technology for outstanding low on−resistance and lower gate
charge performance. This advanced technology is tailored to minimize
conduction loss provide superior switching performance, and with−
stand extreme dv/dt rate. Consequently, SuperFET III MOSFET
Easy−drive series helps manage EMI issues and allows for easier
design implementation.
RDS(on) MAX
ID MAX
650 V
25 mΩ V
75 A
D
G
Features
•
•
•
•
•
•
•
BVDSS
AEC−Q101 Qualified
Max Junction Temperature 150°C
Typ. RDS(on) = 19.9 mΩ
Ultra Low Gate Charge (Typ. QG = 236 nC)
Low Effective Output Capacitance (Typ. COSS(eff.) = 2062 pF)
100% Avalanche Tested
These Devices are Pb−Free and are RoHS Compliant
S
N-Channel MOSFET
Typical Applications
• Automotive PHEV−BEV DC−DC Converter
• Automotive Onboard Charger for PHEV−BEV
TO−247−3LD
CASE 340CX
MARKING DIAGRAM
$Y&Z&3&K
NVHL
025N65S3
$Y
&Z
&3
&K
NVHL025N65S3
= ON Semiconductor Logo
= Assembly Plant Code
= Numeric Date Code
= Lot Code
= Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 2 of
this data sheet.
© Semiconductor Components Industries, LLC, 2018
July, 2019 − Rev. 2
1
Publication Order Number:
NVHL025N65S3/D
NVHL025N65S3
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise specified)
Symbol
Parameter
VDSS
Drain to Source Voltage
VGSS
Gate to Source Voltage
ID
Drain Current
Value
Unit
650
V
DC Positive
30
V
AC Positive, (f > 1 Hz)
30
V
AC Negative, (f > 1 Hz)
−20
V
Continuous (Tc = 25°C)
75
A
Continuous (Tc = 100°C)
65.8
A
Pulsed (Note 1)
187.5
A
IDM
Pulsed Drain Current
EAS
Single Pulsed Avalanche Energy (Note 2)
2025
mJ
EAR
Repetitive Avalanche (Note 1)
5.95
mJ
dv/dt
MOSFET dv/dt
100
V/ns
Peak Diode Recovery dv/dt (Note 3)
20
V/ns
PD
TJ,TSTG
TL
Power Dissipation
(Tc = 25°C)
595
W
Derate Above 25°C
4.76
W/°C
−55 to +150
°C
300
°C
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering, 1/8” from Case for 5 Seconds
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. IAS = 15 A, RG = 25 Ω, starting TJ = 25°C.
3. ISD < 75 A, di/dt ≤ 200 A/ms, VDD ≤ BVDSS, starting TJ = 25°C.
4. Essentially independent of operating temperature typical characteristics.
THERMAL CHARACTERISTICS
Symbol
Parameter
Value
Unit
RθJ C
Thermal Resistance, Junction to Case, Max
0.21
°C/W
RθJ A
Thermal Resistance, Junction to Ambient, Max
40
°C/W
PACKAGE MARKING AND ORDERING INFORMATION
Part Number
Top Marking
Package
Packing Method
Shipping (Qty / Packing)
NVHL025N65S3
NVHL025N65S3
TO−247−3LD
Tube
30 Units / Tube
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2
NVHL025N65S3
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
VGS = 0 V, ID = 1 mA, TJ = 25°C
650
713
−
V
VGS = 0 V, ID = 1 mA, TJ = 150°C
650
755
−
V
OFF CHARACTERISTICS
BVDSS
Drain−to−Source Breakdown Voltage
ΔBVDSS / ΔTJ
Breakdown Voltage Temperature
Coefficient
ID = 1 mA, Referenced to 25°C
−
0.34
−
V/°C
IDSS
Zero Gate Voltage Drain Current
VDS = 650 V, VGS = 0 V
−
0.30
1
μA
VDS = 520 V, VGS = 0 V, Tc = 125°C
−
7.92
−
IGSS
Gate to Body Leakage Current
VGS = +30 V, VDS = 0 V
−
5.27
+100
nA
VGS = −20 V, VDS = 0 V
−
2.65
−100
nA
2.5
3.56
4.5
V
ON CHARACTERISTICS
VGS(th)
Gate to Source Threshold Voltage
VGS = VDS, ID = 3.0 mA
RDS(on)
Static Drain to Source On Resistance
VGS = 10 V, ID = 37.5 A, TJ = 25°C
−
19.9
25
mΩ
VGS = 10 V, ID = 37.5 A, TJ = 100°C
−
34.6
−
mΩ
VDS = 20 V, ID = 75 A
−
78.5
−
S
VDS = 400 V, VGS = 0 V, f = 1 MHz
−
7330
−
pF
gFS
Forward Transconductance
DYNAMIC CHARACTERISTICS
Ciss
Input Capacitance
Coss
Output Capacitance
−
197
−
pF
Crss
Reverse Transfer Capacitance
−
33.6
−
pF
Coss(eff.)
Effective Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
−
2062
−
pF
Coss(er.)
Energy Related Output Capacitance
VDS = 0 V to 400 V, VGS = 0 V
−
285
−
pF
VDS = 400 V, VGS = 10 V, ID = 75 A
(Note 4)
−
236
−
nC
−
59.3
−
nC
−
97.3
−
nC
f = 1 MHz
−
0.818
−
mΩ
VDD = 400 V, ID = 75 A, VGS = 10 V,
RG = 2 Ω (Note 4)
−
43.3
−
ns
−
109
−
ns
Qg(tot)
Total Gate Charge
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
RG
Gate Resistance
SWITCHING CHARACTERISTICS
td(on)
Turn−On Delay Time
tr
Turn−On Rise Time
td(off)
Turn−Off Delay Time
−
120
−
ns
Fall Time
−
107
−
ns
Maximum Continuous Drain to Source Diode Forward Current
−
−
75
A
ISM
Maximum Plused Drain to Source Diode Forward Current
−
−
300
A
VSD
Drain to Source Diode Forward
Voltage
VGS = 0 V, ISD = 37.5 A
−
0.88
1.2
V
trr
Reverse Recovery Time
VGS = 0 V, ISD = 75 A dIF/dt = 100 A/μs
−
714
−
nS
Qrr
Reverse Recovery Charge
−
26.4
−
μC
tf
DRAIN−SOURCE DIODE CHARACTERISTICS
IS
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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3
NVHL025N65S3
TYPICAL CHARACTERISTICS
120
CURRENT LIMITED
BY SILICON
CURRENT LIMITED
BY PACKAGE
ID, Drain Current (A)
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
90
60
30
0
150
25
50
TC, Case Temperature (°C)
Normalized Thermal Impedance, ZθJC
75
100
125
Figure 2. Maximum Continuous Drain Current
vs. Case Temperature
10
DUTY CYCLE − DESCENDING ORDER
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
0.01
0.001
PDM
t1
t2
SINGLE PULSE
−5
NOTES:
DUTY FACTOR: D = t1/t2
PEAK TJ = PDM x Z JC x RJC + TC
−4
10
−3
10
−2
10
−1
10
0
10
10
t, Rectangular Pulse Duration (s)
Figure 3. Normalized Maximum Transient Thermal Impedance
5000
T C = 25 o C
VGS = 10 V
FOR TEMPERATURES
ABOVE 25o C DERATE PEAK
CURRENT AS FOLLOWS:
1000
150 − TC
I = I 25
125
100
10
−5
10
SINGLE PULSE
−4
10
150
TC, Case Temperature (°C)
Figure 1. Normalized Power Dissipation vs. Case
Temperature
IDM, Peak Current (A)
Power Dissipation Multiplier
1.2
−3
10
−2
10
−1
10
t, Rectangular Pulse Duration (s)
Figure 4. Peak Current Capability
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4
0
10
1
10
NVHL025N65S3
TYPICAL CHARACTERISTICS (continued)
1000
300
10
Operation in this area
may be limited by RDS(on)
1
0.01
1
10 ms 1 ms
DC
DC
Rds(on)−limit
10 us
Single Pulse
TJ = Max Rated
TC = 25°C
0.1
IAS, Avalanche Current (A)
ID, Drain Current (A)
30 us
100 us
100
10
100
VDS, Drain−Source Voltage (V)
If R = 0
tAV = (L)(IAS) / (1.3 × RATED BVDSS − VDD)
IfR≠0
tAV = (L/R)ln[(IAS × R) / (1.3 × RATED BVDSS − VDD) + 1]
100
Starting TJ = 25°C
10
Starting TJ = 125°C
1
0.001
1000
IS, Reverse Drain Current (A)
ID, Drain Current (A)
100
TJ = 25°C
10
TJ = 150°C
TJ = −55°C
4
5
6
TJ = 150°C
10
0.1
7
0.0
0.4
0.6
0.8
1.0
1.2
Figure 8. Forward Diode Characteristics
100
ID, Drain Current (A)
ID, Drain Current (Α)
50
0.2
VSD, Body Diode Forward Voltage (V)
250 μs Pulse Width
TJ = 25°C
VGS
10 V Top
8V
7V
6.5 V
6V
5.5 V
5 V Bottom
100
TJ = 25°C
1
Figure 7. Transfer Characteristic
150
100
VGS = 0 V
100
VGS, Gate to Source Voltage (V)
200
10
300
Pulse Duration = 250 μs
Duty Cycle = 0.5% Max
VDD = 20 V
3
1
Figure 6. Unclamped Inductive Switching
Capability
1000
2
0.1
tAV, Time in Avalanche (ms)
NOTES: Refer to ON Semiconductor Application
Notes AN7514 and AN7515
Figure 5. Forward Bias Safe Operating Area
1
0.01
0
VGS
10 V Top
8V
7V
6.5 V
6V
5.5 V
5 V Bottom
80
60
40
250 μs Pulse Width
TJ = 150°C
20
0
0
1
2
3
4
5
0
VDS, Drain to Source Voltage (V)
1
2
3
4
VDS, Drain to Source Voltage (V)
Figure 9. Saturation Characteristics
Figure 10. Saturation Characteristics
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5
5
NVHL025N65S3
TYPICAL CHARACTERISTICS (continued)
3.0
Pulse Duration = 250 μs
Duty Cycle = 0.5% Max
ID = 75 A
100
80
Normalized Drain to Source
ON−Resistance
RDS(ON), Drain to Source On
Resistance (mΩ)
120
TJ = 150°C
60
40
20
TJ = 25°C
0
7
8
9
0.5
−80
−40
0
40
80
120
160
Figure 11. RDSON vs. Gate Voltage
Figure 12. Normalized RDSON vs. Junction
Temperature
1.2
VGS = VDS
ID = 3 mA
0.8
0.6
0.4
−80
−40
0
40
80
120
ID = 10 mA
1.1
1.0
0.9
0.8
−80
160
−40
0
40
80
120
160
TJ, Junction Temperature (°C)
TJ, Junction Temperature (°C)
Figure 13. Normalized Gate Threshold Voltage
vs. Temperature
Figure 14. Normalized Drain to Source
Breakdown Voltage vs. Junction Temperature
10
1.E+05
Coss
1.E+04
C iss
VGS, Gate to Source Voltage (V)
1.E+06
Capacitance (pF)
ID = 75 A
VGS = 10 V
1.0
TJ, Junction Temperature (°C)
1.0
1.E+03
1.E+02
Crss
1.E+01
1.E−01
1.5
VGS, Gate to Source Voltage (V)
1.2
1.E+00
2.0
0.0
10
Normalized Drain to Source
Breakdown Voltage
Normalized Gate Threshold Voltage
6
Pulse Duration = 250 μs
Duty Cycle = 0.5% Max
2.5
f = 1 MHz
VGS = 0 V
0,1
1
10
100
ID = 75 A
VDS, Drain to Source Voltage (V)
VDD = 260 V
6
VDD = 390 V
4
2
0
1000
VDD = 325 V
8
0
50
100
150
200
250
QG, Gate Charge (nC)
Figure 15. Capacitance vs. Drain to Source Volatage
Figure 16. Gate Charge vs. Gate to Source Voltage
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6
NVHL025N65S3
TYPICAL CHARACTERISTICS (continued)
50
45
0.04
RSDS)ON), Drain−Source
On−Resistance (Ω)
40
EOSS (μJ)
35
30
25
20
15
10
5
0
0
130
260
390
520
VGS = 10 V
0.03
VGS = 20 V
0.02
0.01
0
650
VDS, Drain to Source Voltage (V)
TC = 25°C
60
120
180
240
300
ID, Drain Current (A)
Figure 17. EOSS vs. Drain to Source Voltage
Figure 18. On−Resistance Variation vs. Drain
Current and Gate Voltage
SUPERFET is registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
DOCUMENT NUMBER:
DESCRIPTION:
XXXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
98AON93302G
TO−247−3LD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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