DATA SHEET
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MOSFET - Power, Single
N-Channel, SUPERFET) V,
FRFET), TO247-3L
VDSS
RDS(ON) MAX
ID MAX
600 V
40 mW @ 10 V
59 A
D
600 V, 40 mW, 59 A
NVHL040N60S5F
G
Description
The SUPERFET V MOSFET FRFET series has optimized body
diode performance characteristics. This can allow for the removal of
components in the application and improve application performance
and reliability, particularly when soft switching topologies are used.
S
POWER MOSFET
Features
• 650 V @ TJ = 150°C / Typ. RDS(on) = 32 mW
• 100% Avalanche Tested
• Pb−Free, Halogen Free/BFR Free and are RoHS Compliant
Applications
G
• Electric Vehicle On Board Chargers
• EV Main Battery DC/DC Converters
Drain−to−Source Voltage
Gate−to−Source Voltage
DC
Symbol
Value
Unit
VDSS
600
V
VGSS
±30
V
AC (f > 1 Hz)
Continuous Drain Current
TC = 25°C
ID
A
59
37
Power Dissipation
TC = 25°C
PD
347
W
Pulsed Drain Current (Note 1)
TC = 25°C
IDM
209
A
Pulsed Source Current
(Body Diode) (Note 1)
TC = 25°C
ISM
209
A
TJ, TSTG
−55 to
+150
°C
IS
59
A
EAS
574
mJ
Source Current (Body Diode)
Single Pulse Avalanche
Energy
IL = 8.3 A,
RG = 25 W
Avalanche Current
IAS
8.3
A
Repetitive Avalanche Energy (Note 1)
EAR
3.47
mJ
MOSFET dv/dt
dv/dt
120
V/ns
Peak Diode Recovery dv/dt (Note 2)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 seconds)
MARKING DIAGRAM
±30
TC = 100°C
Operating Junction and Storage Temperature
Range
S
TO−247 Long Leads
CASE 340CX
ABSOLUTE MAXIMUM RATINGS (TJ = 25°C, Unless otherwise noted)
Parameter
D
70
TL
260
°C
V040N
60S5F
AYWWZZ
V040N60S5F
A
YWW
ZZ
= Specific Device Code
= Assembly Location
= Date Code (Year & Week)
= Assembly Lot
ORDERING INFORMATION
Device
NVHL040N60S5F
Package
Shipping
TO−247
30 Units / Tube
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Repetitive rating: pulse−width limited by maximum junction temperature.
2. ISD ≤ 29.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C.
© Semiconductor Components Industries, LLC, 2020
May, 2022 − Rev. 1
1
Publication Order Number:
NVHL040N60S5F/D
NVHL040N60S5F
THERMAL CHARACTERISTICS
Parameter
Symbol
Value
Unit
Thermal Resistance, Junction−to−Case, Max.
RqJC
0.36
°C/W
Thermal Resistance, Junction−to−Ambient, Max.
RqJA
40
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 1 mA, TJ = 25_C
600
−
−
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
DV(BR)DSS/
DTJ
ID = 10 mA, Referenced to 25_C
−
630
−
mV/_C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = 600 V, TJ = 25_C
−
−
10
mA
Gate−to−Source Leakage Current
IGSS
VGS = ±30 V, VDS = 0 V
−
−
±100
nA
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 29.5 A, TJ = 25_C
−
32
40
mW
Gate Threshold Voltage
VGS(th)
VGS = VDS, ID = 7.2 mA, TJ = 25_C
3.2
−
4.8
V
gFS
VDS = 20 V, ID = 29.5 A
−
59.5
−
S
VDS = 400 V, VGS = 0 V, f = 250 kHz
−
6318
−
pF
OFF CHARACTERISTICS
ON CHARACTERISTICS
Forward Trans−conductance
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Output Capacitance
CISS
−
98.9
−
Time Related Output Capacitance
COSS(tr.)
ID = Constant, VDS = 0 V to 400 V,
VGS = 0 V
−
1478
−
Energy Related Output Capacitance
COSS(er.)
VDS = 0 V to 400 V, VGS = 0 V
−
170
−
QG(tot)
VDD = 400 V, ID = 29.5 A, VGS = 10 V
Total Gate Charge
COSS
−
115
−
Gate−to−Source Charge
QGS
−
35.9
−
Gate−to−Drain Charge
QGD
−
32.7
−
Gate Resistance
nC
RG
f = 1 MHz
−
4.5
−
W
td(on)
VGS = 0/10 V, VDD = 400 V,
ID = 29.5 A, RG = 2.2 W
−
49.6
−
ns
SWITCHING CHARACTERISTICS
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
−
85.9
−
td(off)
tr
−
110
−
tf
−
2.5
−
SOURCE-TO−DRAIN DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
VGS = 0 V, ISD = 29.5 A, TJ = 25_C
−
−
1.2
V
Reverse Recovery Time
tRR
−
140
−
ns
Reverse Recovery Charge
QRR
VGS = 0 V, ISD = 29.5 A,
dI/dt = 100 A/ms, VDD = 400 V
−
917
−
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
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2
NVHL040N60S5F
TYPICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
100
80
60
40
VGS=4.5V
VGS=5V
VGS=5.5V
VGS=6V
VGS=7V
VGS=10V
20
0
RDS(on), DRAIN−TO−SOURCE ON−RESISTANCE (W)
1000
TJ=25°C
0
5
0.08
10
15
10
1
20
TJ=−55°C
TJ=25°C
TJ=150°C
3
4
5
6
7
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
1000
TJ=25°C
VGS=0V
0.07
0.06
0.05
0.04
0.03
0.02
0.01
0
VGS=10V
VGS=20V
0
20
40
60
80
100
TJ=150°C
TJ=25°C
TJ=−55°C
0
0.2
0.4
0.6
0.8
1
Figure 3. On−Resistance Variation vs. Drain
Current and Gate Voltage
Figure 4. Diode Forward Voltage vs. Source
Current
VGS, GATE−TO−SOURCE VOLTAGE (V)
102
101
CISS
COSS
CRSS
0
1
VSD, DIODE FORWARD VOLTAGE (V)
103
10−1
10
ID, DRAIN CURRENT (A)
VGS=0V
TJ=25°C
f=250KHz
104
100
100
0.1
120
105
CAPACITANCE (pF)
VDS=20V
100
IS, SOURCE CURRENT (A)
ID, DRAIN CURRENT (A)
120
100
200
300
400
500
600
10
ID=29.5A
8
6
4
2
0
VDD=120V
VDD=360V
VDD=400V
0
20
40
60
80
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 5. Capacitance Characteristics
Figure 6. Gate Charge Characteristics
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3
1.2
120
NVHL040N60S5F
1.2
3
VGS=0V
ID=10mA
1.15
RDS(on), DRAIN−TO−SOURCE
ON−RESISTANCE (Normalized)
BVDSS, DRAIN−TO−SOURCE
BREAKDOWN VOLTAGE (Normalized)
TYPICAL CHARACTERISTICS
1.1
1.05
1
0.95
0.9
0.85
0.8
−75
−50
−25
0
25
50
75
100
125
150
1
0.5
0
25
50
75
100
125 150 175
60
10 ms
1 ms
Operation in this Area
is Limited by RDS(on)
1
10 ms
TC = 25°C
TJ = 150°C
Single Pulse
DC
10
1
1000
100
50
40
30
20
10
0
25
50
75
100
125
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TC, CASE TEMPERATURE (°C)
Figure 9. Maximum Safe Operating Area
Figure 10. Maximum Drain Current vs. Case
Temperature
VGS=0V
TJ=25°C
f=250KHz
15
10
5
EOSS
0
−25
Figure 8. On−Resistance Variation vs.
Temperature
100 ms
0
−50
Figure 7. Breakdown Voltage Variation vs.
Temperature
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
1.5
TJ, JUNCTION TEMPERATURE (°C)
10
20
EOSS (mJ)
2
TJ, JUNCTION TEMPERATURE (°C)
100
25
2.5
0
−75
175
1000
0.1
ID=29.5A
VGS=10V
100
200
300
400
500
600
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. EOSS vs. Drain−to−Source Voltage
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4
150
NVHL040N60S5F
TYPICAL CHARACTERISTICS
ZqJC(t), EFFECTIVE TRANSIENT
THERMAL IMPEDANCE (°C/W)
1
D = 0.5
0.1
0.01
0.001
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
Notes:
ZqJC(t) = 0.36°C/W Max
Duty Cycle, D = t1/t2
TJM = PDM x ZqJC(t) + TC
Single Pulse
0.00001
0.0001
0.001
0.01
t, RECTANGULAR PULSE DURATION (s)
Figure 12. Transient Thermal Impedance
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5
0.1
1
NVHL040N60S5F
VGS
RL
Qg
VDD
VGS
Qgs
Qgd
DUT
IG = Const.
Charge
Figure 13. Gate Charge Test Circuit & Waveform
RL
VDS
VDS
90%
90%
90%
VDD
VGS
RG
VGS
DUT
VGS
10%
td(on)
10%
tr
tf
td(off)
ton
toff
Figure 14. Resistive Switching Test Circuit & Waveforms
L
E AS + 1 @ LI AS
2
VDS
BVDSS
ID
IAS
RG
VDD
DUT
VGS
2
ID(t)
VDD
VDS(t)
tp
tp
Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms
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6
Time
NVHL040N60S5F
+
DUT
VSD
−
ISD
L
Driver
RG
Same Type
as DUT
VGS
− dv/dt controlled by RG
− ISD controlled by pulse period
D+
VGS
(Driver)
VDD
Gate Pulse Width
Gate Pulse Period
10 V
IFM, Body Diode Forward Current
ISD
(DUT)
di/dt
IRM
Body Diode Reverse Current
Body Diode Recovery dv/dt
VDS
(DUT)
VDD
VSD
Body Diode
Forward Voltage Drop
Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms
SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC or its subsidiaries in the United States and/or other
countries.
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7
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
TO−247−3LD
CASE 340CX
ISSUE A
DATE 06 JUL 2020
GENERIC
MARKING DIAGRAM*
XXXXXXXXX
AYWWG
DOCUMENT NUMBER:
DESCRIPTION:
XXXXX
A
Y
WW
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”, may
or may not be present. Some products may
not follow the Generic Marking.
98AON93302G
TO−247−3LD
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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