NVHL065N65S3F

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Other names and brands may be claimed as the property of others. MOSFET – Single N-Channel, SUPERFET) III, FRFET) 650 V, 46 A, 65 mW NVHL065N65S3F Features • • • • www.onsemi.com Ultra Low Gate Charge & Low Effective Output Capacitance Lower FOM (RDS(on) max. x Qg typ. & RDS(on) max. x EOSS) AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant VDSS RDS(ON) MAX ID MAX 650 V 65 mW @ 10 V 46 A MAXIMUM RATINGS (TC = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage D Symbol Value Unit VDSS 650 V Gate−to−Source Voltage − DC VGSS ±30 V Gate−to−Source Voltage − AC (f > 1 Hz) VGSS ±30 V Drain Current − Continuous (TC = 25°C) ID 46 A Drain Current − Continuous (TC = 100°C) ID 30 A Drain Current − Pulsed (Note 3) IDM 115 Power Dissipation (TC = 25°C) PD 337 W Power Dissipation − Derate Above 25°C PD 2.7 W/°C TJ, TSTG −55 to +150 °C Single Pulsed Avalanche Energy (Note 4) EAS 635 mJ Repetitive Avalanche Energy (Note 3) EAR 3.37 mJ MOSFET dv/dt dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 5) dv/dt 50 V/ns TL 300 °C Symbol Value Unit Thermal Resistance, Junction−to−Case, Max. (Notes 1, 2) RqJC 0.37 °C/W Thermal Resistance, Junction−to−Ambient, Max. (Notes 1, 2) RqJA 40 Operating Junction and Storage Temperature Range Max. Lead Temperature for Soldering Purposes (1/8″ from case for 5 s) G S POWER MOSFET A TO−247−3LD CASE 340CH MARKING DIAGRAM THERMAL CHARACTERISTICS Parameter Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown. They are not constants and are only valid for the particular conditions noted. 2. Assembled to an infinite heatsink with perfect heat transfer from the case (assumes 0 K/W thermal interface). 3. Repetitive rating: pulse−width limited by maximum junction temperature. 4. IAS = 9 A, RG = 25 W, starting TJ = 25°C. 5. ISD ≤ 32.5 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. $Y&Z&3&K NVHL 065N65S3F $Y &Z &3 &K NVHL065N65S3F ORDERING INFORMATION Device NVHL065N65S3F © Semiconductor Components Industries, LLC, 2020 August, 2020 − Rev. 0 1 = ON Semiconductor Logo = Assembly Plant Code = Data Code (Year & Week) = Lot = Specific Device Code Package Shipping TO−247−4LD 30 Units / Tube (Pb−Free) Publication Order Number: NVHL065N65S3F/D NVHL065N65S3F ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage BVDSS VGS = 0 V, ID = 1 mA, TJ = 25°C 650 V Drain−to−Source Breakdown Voltage BVDSS VGS = 0 V, ID = 10 mA, TJ = 150°C 700 V Breakdown Voltage Temperature Coefficient DBVDSS/ DTJ ID = 15 mA, Referenced to 25_C Zero Gate Voltage Drain Current IDSS VGS = 0 V, VDS = 650 V Gate−to−Body Leakage Current IGSS VGS = ±30 V, VDS = 0 V VGS(th) VGS = VDS, ID = 1.3 mA DVGS(th)/DTJ VGS = VDS, ID = 1.3 mA −8.6 RDS(on) VGS = 10 V, ID = 23 A 54 gFS VDS = 20 V, ID = 23 A 31 S 4075 pF 630 mV/_C 10 mA ±100 nA 5.0 V 153 VDS = 520 V, TC = 125_C ON CHARACTERISTICS Gate Threshold Voltage Threshold Temperature Coefficient Static Drain−to−Source On Resistance Forward Transconductance 3.0 mV/_C 65 mW DYNAMIC CHARACTERISTICS Input Capacitance Ciss Output Capacitance Coss VGS = 0 V, VDS = 400 V, f = 1 MHz 95 Reverse Transfer Capacitance Crss Effective Output Capacitance Coss(eff.) VDS = 0 V to 400 V, VGS = 0 V 876 pF Energy Related Output Capacitance Coss(er.) VDS = 0 V to 400 V, VGS = 0 V 160 pF Total Gate Charge at 10 V QG(TOT) 98 nC Gate−to−Source Gate Charge QGS Gate−to−Drain “Miller” Charge QGD Equivalent Series Resistance ESR 11 VGS = 10 V, VDS = 400 V, ID = 23 A (Note 6) 30 f = 1 MHz 1.5 W 34 ns 31 ns 78 ns 16 ns 38 SWITCHING CHARACTERISTICS Turn-On Delay Time td(on) Turn-On Rise Time tr Turn-Off Delay Time td(off) Turn-Off Fall Time VGS = 10 V, VDD = 400 V, ID = 23 A, Rg = 2.7 W (Note 6) tf SOURCE−DRAIN DIODE CHARACTERISTICS Maximum Continuous Source−to− Drain Diode Forward Current IS Maximum Pulsed Source−to−Drain Diode Forward Current ISM Source−to−Drain Diode Forward Voltage VSD Reverse Recovery Time trr Charge Time ta Discharge Time tb Reverse Recovery Charge Qrr VGS = 0 V VGS = 0 V VGS = 0 V, ISD = 23 A 116 VGS = 0 V, dIF/dt = 100 A/ms, ISD = 23 A 46 A 115 A 1.3 V ns 90 24 488 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 6. Essentially independent of operating temperature typical characteristics. www.onsemi.com 2 NVHL065N65S3F TYPICAL PERFORMANCE CHARACTERISTICS 200 10 1 150°C 10 Notes: 1. 250 ms Pulse Test 2. TC = 25°C 1 1 10 2 20 4 6 8 10 VDS, Drain−Source Voltage [V] VGS, Gate−Source Voltage [V] Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.08 1000 Note: TC = 25°C IS, Reverse Drain Current [A] RDS(ON), Drain−Source On−Resistance [W] 25°C −55°C 0.1 0.2 Notes: 1. VDS = 20 V 2. 250 ms Pulse Test 100 ID Drain Current [A] ID Drain Current [A] 300 VGS = 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 100 0.07 VGS = 10 V 0.06 VGS = 20 V 0.05 0.04 0 20 40 60 80 100 Notes: 1. VGS = 0 V 2. 250 ms Pulse Test 100 10 150°C 1 25°C 0.1 −55°C 0.01 0.001 120 0.0 ID, Drain Current [A] 0.5 1.0 1.5 2.0 VSD, Body Diode Forward Voltage [V] Figure 3. On−Resistance Variation vs. Drain Current and Gate Voltage Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 10 100000 Capacitance [pF] VGS, Gate−Source Voltage [V] Note: ID = 23 A Ciss 10000 1000 Coss 100 10 1 0.1 Notes: 1. VGS = 0 V 2. f = 1 MHz ciss = cgs + cgd (cds = shorted) coss = cds + cgd crss = cgd 0.1 1 10 Crss 100 8 VDS = 400 V 6 4 2 0 1000 VDS = 130 V 0 20 40 60 80 100 VDS, Drain−Source Voltage [V] Qg, Total Gate Charge [V] Figure 5. Capacitance Characteristics Figure 6. Gate Charge Characteristics www.onsemi.com 3 NVHL065N65S3F TYPICAL PERFORMANCE CHARACTERISTICS (Continued) 2.5 Notes: 1. VGS = 0 V 2. ID = 15 mA 1.1 RDS(ON), [Normalized] Drain−Source On−Resistance BVDSS, [Normalized] Drain−Source Breakdown Voltage 1.2 1.0 0.9 Notes: 1. VGS = 10 V 2. ID = 23 A 2.0 1.5 1.0 0.5 0.0 0.8 −50 0 50 100 150 −50 TJ, Junction Temperature [5C] 100 150 Figure 8. On−Resistance Variation vs. Temperature 50 500 30 ms 40 ID, Drain Current [A] 100 ID, Drain Current [A] 50 TJ, Junction Temperature [5C] Figure 7. Breakdown Voltage Variation vs. Temperature 100 ms 1 ms 10 Operation in This Area is Limited by RDS(on) 10 ms DC Notes: 1. TC = 25°C 2. TJ = 150°C 3. Single Pulse 1 1 30 20 10 0 0.1 10 100 25 1000 50 75 100 125 150 VDS, Drain−Source Voltage TC, Case Temperature [5C] Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current vs. Case Temperature 25 20 EOSS [mJ] 0 15 10 5 0 0 130 260 390 520 650 VDS, Drain to Source Voltage Figure 11. Eoss vs. Drain to Source Voltage www.onsemi.com 4 NVHL065N65S3F TYPICAL PERFORMANCE CHARACTERISTICS (Continued) r(t), Normalized Effective Transient Thermal Resistance 2 DUTY CYCLE−DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 PDM t1 t2 Notes: ZqJC(t) = r(t) × RqJC RqJC = 0.37°C/W Peak TJ = PDM × ZqJC(t) + TC Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 −5 10 −4 10 −3 10 −2 −1 10 10 10 0 t, Rectangular Pulse Duration (sec) Figure 12. Transient Thermal Response Curve www.onsemi.com 5 10 1 10 2 NVHL065N65S3F Figure 13. Gate Charge Test Circuit & Waveform Figure 14. Resistive Switching Test Circuit & Waveforms Figure 15. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 6 NVHL065N65S3F Figure 16. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET and FRFET are registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 7 NVHL065N65S3F PACKAGE DIMENSIONS TO−247−4LD CASE 340CH ISSUE A www.onsemi.com 8 NVHL065N65S3F ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 9 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative