NVHL095N65S3HF

DATA SHEET www.onsemi.com MOSFET - Power, N-Channel, SUPERFET III, FRFET VDSS RDS(ON) MAX ID MAX 650 V 95 mW @ 10 V 36 A D 650 V, 95 mW, 36 A NVHL095N65S3HF Description SUPERFET III MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET is very suitable for the various power system for miniaturization and higher efficiency. SUPERFET III HF version provides fast recovery for improved efficiency in high speed switching applications. Features • • • • • • • 700 V @ TJ = 150°C Typ. RDS(on) = 78 mW Ultra Low Gate Charge (Typ. Qg = 66 nC) Low Effective Output Capacitance (Typ. Coss(eff.) = 556 pF) 100% Avalanche Tested NVHL Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant G S G D S TO−247 Long Leads CASE 340CX MARKING DIAGRAM AYWWZZ NVHL095 N65S3HF Applications • Automotive On Board Charger HEV−EV • Automotive DC/DC Converter for HEV−EV A = Assembly Plant Code YWW = Data Code (Year & Week) ZZ = Assembly Lot Code NVHL095N65S3HF = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. © Semiconductor Components Industries, LLC, 2020 April, 2022 − Rev. 0 1 Publication Order Number: NVHL095N65S3HF/D NVHL095N65S3HF ABSOLUTE MAXIMUM RATINGS (TC = 25°C, Unless otherwise noted) Symbol Parameter VDSS Drain−to−Source Voltage VGSS Gate−to−Source Voltage ID Drain Current Value Unit 650 V − DC ±30 V − AC (f > 1 Hz) ±30 − Continuous (TC = 25°C) 36 − Continuous (TC = 100°C) 22.8 IDM Drain Current 90 A EAS Single Pulsed Avalanche Energy (Note 2) 440 mJ IAS Avalanche Current (Note 2) 4.6 A EAR Repetitive Avalanche Energy (Note 1) 2.72 mJ dv/dt MOSFET dv/dt 100 V/ns Peak Diode Recovery dv/dt (Note 3) 50 PD − Pulsed (Note 1) A Power Dissipation (TC = 25°C) 272 W 2.176 W/°C −55 to +150 °C 300 °C − Derate Above 25°C TJ, TSTG TL Operating and Storage Temperature Range Maximum Lead Temperature for Soldering, 1/8″ from Case for 5 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Repetitive rating: pulse−width limited by maximum junction temperature. 2. IAS = 4.6 A, RG = 25 W, starting TJ = 25°C. 3. ISD ≤ 18 A, di/dt ≤ 200 A/ms, VDD ≤ 400 V, starting TJ = 25°C. THERMAL CHARACTERISTICS Symbol Parameter RqJC Thermal Resistance, Junction−to−Case, Max. RqJA Thermal Resistance, Junction−to−Ambient, Max. Value Unit 0.46 _C/W 40 PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NVHL095N65S3HF NVHL095N65S3HF TO−247 Tube N/A N/A 30 Units www.onsemi.com 2 NVHL095N65S3HF ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted) Parameter Test Conditions Min Typ Max Unit Drain−to−Source Breakdown Voltage VGS = 0 V, ID = 1 mA, TJ = 25_C 650 − − V VGS = 0 V, ID = 1 mA, TJ = 150_C 700 − − V Symbol OFF CHARACTERISTICS BVDSS DBVDSS/DTJ Breakdown Voltage Temperature Coefficient ID = 15 mA, Referenced to 25_C − 0.63 − V/_C IDSS Zero Gate Voltage Drain Current VDS = 650 V, VGS = 0 V − − 10 mA VDS = 520 V, TC = 125_C − 11 − IGSS Gate−to−Body Leakage Current VGS = ±30 V, VDS = 0 V − − ±100 nA VGS = VDS, ID = 0.86 mA 3.0 − 5.0 V ON CHARACTERISTICS VGS(th) Gate Threshold Voltage RDS(on) Static Drain−to−Source On Resistance VGS = 10 V, ID = 18 A − 78 95 mW Forward Transconductance VDS = 20 V, ID = 18 A − 19 − S VDS = 400 V, VGS = 0 V, f = 1 MHz − 3105 − pF − 65 − pF gFS DYNAMIC CHARACTERISTICS Ciss Input Capacitance Coss Output Capacitance Coss(eff.) Effective Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 556 − pF Coss(er.) Energy Related Output Capacitance VDS = 0 V to 400 V, VGS = 0 V − 107 − pF VDS = 400 V, ID = 18 A, VGS = 10 V (Note 4) − 66 − nC − 22 − nC − 26 − nC f = 1 MHz − 2.4 − W VDD = 400 V, ID = 18 A, VGS = 10 V, Rg = 4.7 W (Note 4) − 29.7 − ns − 24.7 − ns Qg(tot) Total Gate Charge at 10 V Qgs Gate−to−Source Gate Charge Qgd Gate−to−Drain “Miller” Charge ESR Equivalent Series Resistance SWITCHING CHARACTERISTICS td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time − 74.6 − ns Turn-Off Fall Time − 3.2 − ns tf SOURCE-DRAIN DIODE CHARACTERISTICS Maximum Continuous Source−to−Drain Diode Forward Current − − 36 A ISM Maximum Pulsed Source−to−Drain Diode Forward Current − − 90 A VSD Source−to−Drain Diode Forward Voltage VGS = 0 V, ISD = 18 A − − 1.3 V trr Reverse Recovery Time 91 − ns Reverse Recovery Charge VGS = 0 V, ISD = 18 A, dIF/dt = 100 A/ms − Qrr − 363 − nC IS Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Essentially independent of operating temperature typical characteristics. www.onsemi.com 3 NVHL095N65S3HF TYPICAL CHARACTERISTICS 100 VGS = 10 V 8.0 V 7.0 V 6.5 V ID, DRAIN CURRENT (A) 250 ms Pulse Test TC = 25°C 6.0 V 10 5.5 V 1 0.1 0.2 2 ID, DRAIN CURRENT (A) 5.5 V 0.1 TJ = −55°C 4 5 6 7 8 VGS, GATE−TO−SOURCE VOLTAGE (V) 0.20 0.15 VGS = 10 V 0.10 VGS = 20 V 0.05 0 0 20 CAPACITANCE (pF) IS, REVERSE DRAIN CURRENT (A) 10K TJ = 150°C TJ = 25°C 0.1 TJ = −55°C 0.5 1.0 Ciss 1K Coss 100 10 1 0.01 0 80 100K 10 0.001 60 Figure 4. On−Resistance Variation vs. Drain Current and Gate Voltage VDS = 20 V 250 ms Pulse Test 1 40 ID, DRAIN CURRENT (A) Figure 3. Transfer Characteristics 100 10 Figure 2. On−Region Characteristics 1505C TJ = 150°C 1000 1 Figure 1. On−Region Characteristics 255C TJ = 25°C 3 6.0 V 10 VDS, DRAIN−SOURCE VOLTAGE (V) VDS = 18 V 250 ms Pulse Test 1 VGS = 10 V 8.0 V 7.0 V VDS, DRAIN−SOURCE VOLTAGE (V) 100 10 250 ms Pulse Test TC = 150°C 6.5 V 1 20 RDS(on), DRAIN−SOURCE ON−RESISTANCE (W) ID, DRAIN CURRENT (A) 100 VGS = 0 V f = 1 MHz Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 0.1 0.1 1.5 Crss 1 10 100 VSD, BODY DIODE FORWARD VOLTAGE (V) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. Body Diode Forward Voltage Variation vs. Source Current and Temperature Figure 6. Capacitance Characteristics www.onsemi.com 4 NVHL095N65S3HF TYPICAL CHARACTERISTICS ID = 18 A BVDSS, DRAIN−TO−SOURCE BREAKDOWN VOLTAGE (Normalized) VGS, GATE−SOURCE VOLTAGE (V) 10 VDD = 130 V 8 VDD = 400 V 6 4 2 0 0 14 28 42 56 70 VGS = 0 V ID = 10 mA 1.1 1.0 0.9 0.8 −75 −25 25 75 125 175 QG, TOTAL GATE CHARGE (nC) TJ, JUNCTION TEMPERATURE (°C) Figure 7. Gate Charge Characteristics Figure 8. Breakdown Voltage Variation vs. Temperature 3.0 200 ID = 18 A VGS = 10 V 2.5 2.0 1.5 1.0 0.5 0 −75 −25 30 ms 100 ID, DRAIN CURRENT (A) RDS(on), DRAIN−SOURCE ON−RESISTANCE (Normalized) 1.2 25 75 125 100 ms 10 1 ms 10 ms DC 1 0.1 175 Operation in this Area is Limited by RDS(on) TC = 25°C TJ = 150°C Single Pulse 1 10 100 1000 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−SOURCE VOLTAGE (V) Figure 9. On−Resistance Variation vs. Temperature Figure 10. Maximum Safe Operating Area 40 17 13.6 30 25 EOSS (mJ) ID, DRAIN CURRENT (A) 35 20 15 10 6.8 3.4 5 0 10.2 25 50 75 100 125 0 150 0 130 260 390 520 650 TC, CASE TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Drain Current vs. Case Temperature Figure 12. EOSS vs. Drain−to−Source Voltage www.onsemi.com 5 NVHL095N65S3HF TYPICAL CHARACTERISTICS GATE THRESHOLD VOLTAGE (Normalized) RDS(on), ON−RESISTANCE (mW) 300 ID = 18 A 250 200 TJ = 150°C 150 100 0 TJ = 25°C 5 6 7 8 9 10 1.5 ID = 0.86 mA 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 −75 −25 25 75 125 175 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ, JUNCTION TEMPERATURE (°C) Figure 13. RDS(on) vs. Gate Voltage Figure 14. Normalized Gate Threshold Voltage vs. Temperature IAS, AVALANCHE CURRENT (A) 100 If R = 0 tAV = (L)(I AS )/(1.3*RATED BV DSS − VDD ) / 0 If R = tAV = (L/R)ln[(I AS *R)/(1.3*RATED BV DSS − VDD ) +1] Starting TJ = 25°C 10 Starting TJ = 125°C 1 1E−06 1E−05 1E−04 1E−03 1E−01 1E−02 tAV, TIME IN AVALANCHE (ms) NOTE: Refer to Fairchild Application Notes AN7514 and AN7515 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (Normalized) Figure 15. Unclamped Inductive Switching Capability 10 1 Duty Cycle = 0.5 0.2 0.1 0.01 0.1 0.05 0.02 P DM 0.01 t1 Single Pulse 0.001 0.00001 t2 0.0001 0.001 0.01 t, RECTANGULAR PULSE DURATION (sec) Figure 16. Transient Thermal Response www.onsemi.com 6 Notes: ZqJC (t) = r(t) x RqJC RqJC = 0.4°C/W Peak TJ = PDM x ZqJC (t) + TC Duty Cycle, D = t1/t2 0.1 1 NVHL095N65S3HF VGS RL Qg VDS VGS Qgs Qgd DUT IG = Const. Figure 17. Gate Charge Test Circuit & Waveform RL VDS VDS 90% 90% 90% VDD VGS RG VGS DUT VGS 10% td(on) 10% tr td(off) ton tf toff Figure 18. Resistive Switching Test Circuit & Waveforms L E AS + 1 @ LI AS 2 VDS BVDSS ID IAS RG VDD DUT VGS 2 ID(t) VDD VDS(t) tp tp Figure 19. Unclamped Inductive Switching Test Circuit & Waveforms www.onsemi.com 7 Time NVHL095N65S3HF + DUT VSD − ISD L Driver RG Same Type as DUT VGS − dv/dt controlled by RG − ISD controlled by pulse period D+ VGS (Driver) VDD Gate Pulse Width Gate Pulse Period 10 V IFM, Body Diode Forward Current ISD (DUT) di/dt IRM Body Diode Reverse Current Body Diode Recovery dv/dt VDS (DUT) VSD VDD Body Diode Forward Voltage Drop Figure 20. Peak Diode Recovery dv/dt Test Circuit & Waveforms SUPERFET and FRFET are a registered trademarks of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 8 NVHL095N65S3HF PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A www.onsemi.com 9 NVHL095N65S3HF onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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