NVHL160N120SC1

MOSFET - SiC Power, Single N-Channel 1200 V, 160 mW, 17 A NVHL160N120SC1 Features • • • • • • Typ. RDS(on) = 160 m Ultra Low Gate Charge (typ. QG(tot) = 34 nC) Low Effective Output Capacitance (typ. Coss = 50 pF) 100% UIL Tested Qualified According to AEC−Q101 These Devices are RoHS Compliant www.onsemi.com V(BR)DSS RDS(on) MAX ID MAX 1200 V 224 m @ 20 V 17 A N−CHANNEL MOSFET Typical Applications • Automotive On Board Charger • Automotive DC/DC Converter for EV/HEV D MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Parameter Value Unit Drain−to−Source Voltage VDSS 1200 V Gate−to−Source Voltage VGS −15/+25 V VGSop −5/+20 V ID 17 A PD 119 W ID 12 A PD 59 W IDM 69 A IDSC 140 A TJ, Tstg −55 to +175 °C IS 11 A EAS 128 mJ Recommended Operation Values of Gate−to− Source Voltage TC < 175°C Continuous Drain Current Steady State TC = 25°C Power Dissipation Steady TC = 100°C State Continuous Drain Current Power Dissipation Pulsed Drain Current (Note 2) TA = 25°C Single Pulse Surge Drain TA = 25°C, tp = 10 s, Current Capability RG = 4.7  Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 23 A, L = 1 mH) (Note 3) G S G D S TO−247−3LD CASE 340CX MARKING DIAGRAM &Z&3&K NVHL160 N120SC1 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL CHARATERISTICS Parameter Symbol Value Unit Junction−to−Case (Note 1) RJC 1.3 °C/W Junction−to−Ambient (Note 1) RJA 40 °C/W 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Repetitive rating, limited by max junction temperature. 3. EAS of 128 mJ is based on starting TJ = 25°C; L = 1 mH, IAS = 16 A, VDD = 120 V, VGS = 18 V. © Semiconductor Components Industries, LLC, 2019 February, 2021 − Rev. 1 1 &Z = Assembly Plant Code &3 = Date Code (Year & Week) &K = Lot NVHL160N120SC1 = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 2 of this data sheet. Publication Order Number: NVHL160N120SC1/D NVHL160N120SC1 ELECTRICAL CHARACTERISTICS (TJ = 25_C unless otherwise stated) Symbol Test Conditions Min Typ Max Unit Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 1 mA 1200 − − V Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ ID = 1 mA, referenced to 25_C − 600 − mV/_C IDSS VGS = 0 V, VDS = 1200 V, TJ = 25_C − − 100 A VGS = 0 V, VDS = 1200 V, TJ = 175_C − − 250 IGSS VGS = +25/−15 V, VDS = 0 V − − ±1 A Gate Threshold Voltage VGS(th) VGS = VDS, ID = 2.5 mA 1.8 3.1 4.3 V Recommended Gate Voltage VGOP −5 − +20 V VGS = 20 V, ID = 12 A, TJ = 25_C − 162 224 m VGS = 20 V, ID = 12 A, TJ = 175_C − 271 377 VDS = 10 V, ID = 12 A − 3 − S VGS = 0 V, f = 1 MHz, VDS = 800 V − 665 − pF Parameter OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS Drain−to−Source On Resistance Forward Transconductance RDS(on) gFS CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS − 50 − Reverse Transfer Capacitance CRSS − 5 − Total Gate Charge QG(tot) − 34 − Threshold Gate Charge QG(th) − 6 − Gate−to−Source Charge QGS − 12.5 − Gate−to−Drain Charge QGD − 9.6 − Gate Resistance VGS = −5/20 V, VDS = 600 V, ID = 16 A nC RG f = 1 MHz − 1.4 −  td(on) VGS = −5/20 V, VDS = 800 V, ID = 16 A, RG = 6 , Inductive Load − 11 − ns − 19 − td(off) − 15 − tf − 8 − Turn-On Switching Loss EON − 200 − Turn-Off Switching Loss EOFF − 34 − Total Switching Loss ETOT − 234 − SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn−Off Delay Time tr Fall Time J DRAIN−SOURCE DIODE CHARACTERISTICS Continuous Drain−to−Source Diode Forward Current ISD VGS = −5 V, TJ = 25_C − − 11 A Pulsed Drain−to−Source Diode Forward Current (Note 2) ISDM VGS = −5 V, TJ = 25_C − − 69 A Forward Diode Voltage VSD VGS = −5 V, ISD = 6 A, TJ = 25_C − 4 10 V Reverse Recovery Time tRR − 15 − ns Reverse Recovery Charge QRR VGS = −5/20 V, ISD = 16 A, dIS/dt = 1000 A/s − 45 − nC Reverse Recovery Energy EREC − 3.9 − J Peak Reverse Recovery Current IRRM − 6.2 − A Charge Time Ta − 7.4 − ns Discharge Time Tb − 7 − ns Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NVHL160N120SC1 TYPICAL CHARACTERISTICS 50 19 V ID, DRAIN CURRENT (A) 40 RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE 4.0 VGS = 20 V 18 V 17 V 30 16 V 15 V 20 12 V 10 0 10 V 0 6 4 2 8 10 15 V 16 V 3.0 17 V 2.5 18 V 19 V 2.0 1.5 VGS = 20 V 1.0 0.5 0 10 30 20 40 ID, DRAIN CURRENT (A) Figure 1. On−Region Characteristics Figure 2. Normalized On−Resistance vs. Drain Current and Gate Voltage 700 RDS(on), ON−RESISTANCE (m) RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE ID = 12 A VGS = 20 V 1.7 1.5 1.3 1.1 0.9 0.7 −75 −50 −25 0 25 50 75 ID = 12 A 600 500 400 300 TJ = 150°C 200 TJ = 25°C 100 0 100 125 150 175 9 10 11 12 13 14 15 16 17 18 19 TJ, JUNCTION TEMPERATURE (°C) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 3. On−Resistance Variation with Temperature Figure 4. On−Resistance vs. Gate−to−Source Voltage 20 100 IS, REVERSE DRAIN CURRENT (A) 25 VDS = 20 V ID, DRAIN CURRENT (A) VGS = 12 V 3.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1.9 20 15 TJ = 25°C 10 5 TJ = 175°C 0 10 V 2 4 TJ = −55°C 6 8 10 12 14 16 VGS = −5 V 1 TJ = 25°C TJ = 175°C 10 TJ = −55°C 2 3 4 5 6 7 8 VGS, GATE−TO−SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Diode Forward Voltage vs. Current www.onsemi.com 3 9 NVHL160N120SC1 20 10K VDD = 400 V ID = 16 A 15 VDD = 800 V 10 CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS VDD = 600 V 5 0 −5 0 10 20 0.1 1 10 100 800 20 ID, DRAIN CURRENT (A) IAS, AVALANCHE CURRENT (A) Crss f = 1 MHz VGS = 0 V Figure 8. Capacitance vs. Drain−to−Source Voltage TJ = 150°C 0.001 0.01 0.1 1 10 VGS = 20 V 16 12 8 4 0 RJC = 1.3°C/W 25 75 50 100 Figure 9. Unclamped Inductive Switching Capability Figure 10. Maximum Continuous Drain Current vs. Case Temperature P(PK), PEAK TRANSIENT POWER (w) 10 s 10 100 s This area is limited by RDS(on) 1 ms 10 ms 100 ms Single Pulse TJ = Max Rated RJC = 1.3°C/W TC = 25°C 0.1 150 TC, CASE TEMPERATURE (°C) 100K 1 125 tAV, TIME IN AVALANCHE (ms) 100 ID, DRAIN CURRENT (A) 10 Figure 7. Gate−to−Source Voltage vs. Total Charge 10 0.01 Coss VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ = 25°C 0.1 100 Qg, GATE CHARGE (nC) 50 1 Ciss 1 40 30 1K 1 10 100 1K 5K Single Pulse RJC = 1.3°C/W TC = 25°C 10K 1K 100 10 0.00001 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) t, PULSE WIDTH (sec) Figure 11. Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 4 175 0.1 NVHL160N120SC1 r(t). NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE (°C/W) TYPICAL CHARACTERISTICS 2 1 50% Duty Cycle 20% 10% 0.1 5% 2% 1% 0.01 Notes: ZJC (t) = r(t) x RJC RJC = 1.3°C/W Peak TJ = PDM x ZJC (t) + TC Duty Cycle, D = t1/t2 P DM Single Pulse t1 t2 0.001 0.00001 0.0001 0.001 0.01 0.1 t, RECTANGULAR PULSE DURATION (sec) Figure 13. Junction−to−Ambient Thermal Response PACKAGE MARKING AND ORDERING INFORMATION Part Number Top Marking Package Packing Method Reel Size Tape Width Quantity NVHL160N120SC1 NVHL160N120SC1 TO−247 Long Lead Tube N/A N/A 30 Units www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO−247−3LD CASE 340CX ISSUE A DATE 06 JUL 2020 GENERIC MARKING DIAGRAM* XXXXXXXXX AYWWG DOCUMENT NUMBER: DESCRIPTION: XXXXX A Y WW G = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 98AON93302G TO−247−3LD Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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