NVJS4151PT1G

NVJS4151P MOSFET – Power, Single P-Channel, Trench, SC-88 -20 V, -4.1 A Features • Leading Trench Technology for Low RDS(ON) Extending Battery Life • SC−88 Small Outline (2x2 mm) for Maximum Circuit Board • • • Utilization, Same as SC−70−6 Gate Diodes for ESD Protection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant http://onsemi.com V(BR)DSS RDS(on) Typ ID Max 55 mW @ −4.5 V −20 V −4.1 A 70 mW @ −2.5 V 180 mW @ −1.8 V SC−88 (SOT−363) Applications • High Side Load Switch • Cell Phones, Computing, Digital Cameras, MP3s and PDAs MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS −20 V Gate−to−Source Voltage VGS ±12 V ID −3.2 A Continuous Drain Current (Note 1) Steady State TA = 25 °C TA = 85 °C −2.3 t≤5s TA = 25 °C −4.1 Steady State TA = 25 °C PD 1.2 tp = 10 ms IDM −13 A TJ, TSTG −55 to 150 °C Source Current (Body Diode) IS −0.8 A Lead Temperature for Soldering Purposes (1/8” from case for 10 s) TL 260 °C ESD 4000 V Power Dissipation (Note 1) Pulsed Drain Current Operating Junction and Storage Temperature ESD Human Body Model (HBM) D D 2 5 D G 3 4 S Top View D D S 6 1 VTY M G G SC−88/SOT−363 CASE 419B 1 D VTY M G D G = Device Code = Date Code = Pb−Free Package (Note: Microdot may be in either location) Max Unit Junction−to−Ambient – Steady State RqJA 125 °C/W Junction−to−Ambient − t ≤ 5 s RqJA 75 Junction−to−Lead – Steady State RqJL 45 Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq [1 oz] including traces). July, 2019 − Rev. 1 6 W Symbol © Semiconductor Components Industries, LLC, 2014 1 MARKING DIAGRAM & PIN ASSIGNMENT THERMAL RESISTANCE RATINGS (Note 1) Parameter D 1 ORDERING INFORMATION Device Package Shipping† NVJS4151PT1G SC−88 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NVJS4151P/D NVJS4151P ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise stated) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current IGSS −20 VGS = 0 V, ID = −250 mA VGS = −16 V, VDS = 0 V V −12 mV/°C TJ = 25°C −1.0 TJ = 85°C −5.0 mA VDS = 0 V, VGS = ±4.5 V ±1.5 mA VDS = 0 V, VGS = ±12 V ±10 mA −1.2 V ON CHARACTERISTICS (Note 2) Gate Threshold Voltage VGS(TH) −0.40 Negative Threshold Temperature Coefficient VGS(TH)/TJ VGS = VDS, ID = −250 mA 4.0 Drain−to−Source On Resistance RDS(on) VGS = −4.5 V, ID = −2.9 A 55 67 VGS = −2.5 V, ID = −2.4 A 70 85 VGS = −1.8 V, ID = −1.0 A 180 205 VGS = −10 V, ID = −3.3 A 12 S 850 pF Forward Transconductance gFS mV/°C mW CHARGES AND CAPACITANCES CISS Input Capacitance Output Capacitance COSS Reverse Transfer Capacitance CRSS Total Gate Charge VGS = 0 V, f = 1.0 MHz, VDS = −10 V QG(TOT) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 160 110 nC 10 VGS = −4.5 V, VDS = −10 V, ID = −3.3 A 1.5 2.8 SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time td(ON) 0.85 tr 1.7 td(OFF) Fall Time VGS = −4.5 V, VDD = −10 V, ID = −1.0 A, RG = 6.0 W tf ms 2.7 4.2 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Charge Time Ta Discharge Time Tb Reverse Recovery Charge VGS = 0 V, IS = −1.3 A, TJ = 25°C −0.75 63 VGS = 0 V, dIS/dt = 100 A/ms, IS = −1.3 A QRR −1.2 V ns 9.0 54 0.23 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 3. Switching characteristics are independent of operating junction temperatures. http://onsemi.com 2 NVJS4151P TYPICAL ELECTRICAL CHARACTERISTICS 5 VDS w −10 V VGS = −2.4 V VGS = −2.0 V 3 −ID, DRAIN CURRENT (A) −ID, DRAIN CURRENT (A) 4 VGS = −1.6 V VGS = −2.8 V to 6.0 V . 2 VGS = −1.4 V 1 VGS = −1.0 V 0 2 4 6 2 1 0 1 2 3 4 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. On−Region Characteristics ID = −3.3 A TJ = 25°C 0.4 0.3 0.2 0.1 0 0 2 4 6 0.6 TJ = 25°C 0.5 0.4 VGS = −1.8 V 0.3 0.2 0.1 VGS = −2.5 V VGS = −4.5 V 0 1 2 3 4 5 −VGS, GATE−TO−SOURCE VOLTAGE (V) −ID, DRAIN CURRENT (A) Figure 3. On−Resistance versus Gate−to−Source Voltage Figure 4. On−Resistance versus Drain Current and Gate Voltage 100000 1.7 VGS = −4.5 V ID = −2.9 A VGS = 0 V −IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 3 0 8 0.5 1.5 4 VGS = −1.2 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) TJ = 25°C VGS = −1.8 V TJ = 150°C 10000 1.3 1.1 0.9 1000 100 0.7 −50 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 0 4 8 12 16 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current versus Voltage http://onsemi.com 3 20 NVJS4151P VGS = 0 V TJ = 25°C 1000 CISS 750 500 250 0 0 4 8 12 16 5 15 QT 4 VGS VDS 3 12 9 2 6 Qgs Qgd ID = −3.3 A TJ = 25°C 1 0 0 20 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 1250 −VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS 2 4 6 8 10 3 0 12 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage versus Total Charge 10000 3 −IS, SOURCE CURRENT (A) tf t, TIME (ns) td(off) tr 1000 td(on) 100 1 10 100 VGS = 0 V TJ = 25°C 2.5 2 1.5 1 0.5 0 0.4 0.5 0.6 0.7 0.8 −VSD, SOURCE−TO−DRAIN VOLTAGE (V) RG, GATE RESISTANCE (W) Figure 9. Resistive Switching Time Variation Gate Resistance Figure 10. Diode Forward Voltage versus Current http://onsemi.com 4 0.9 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y 1 SCALE 2:1 DATE 11 DEC 2012 2X aaa H D D H A D 6 5 GAGE PLANE 4 1 2 L L2 E1 E DETAIL A 3 aaa C 2X bbb H D 2X 3 TIPS e B 6X b ddd TOP VIEW C A-B D M A2 DETAIL A A 6X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END. 4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF THE PLASTIC BODY AND DATUM H. 5. DATUMS A AND B ARE DETERMINED AT DATUM H. 6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP. 7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION. ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER RADIUS OF THE FOOT. ccc C A1 SIDE VIEW C SEATING PLANE END VIEW c RECOMMENDED SOLDERING FOOTPRINT* 6X DIM A A1 A2 b C D E E1 e L L2 aaa bbb ccc ddd MILLIMETERS MIN NOM MAX −−− −−− 1.10 0.00 −−− 0.10 0.70 0.90 1.00 0.15 0.20 0.25 0.08 0.15 0.22 1.80 2.00 2.20 2.00 2.10 2.20 1.15 1.25 1.35 0.65 BSC 0.26 0.36 0.46 0.15 BSC 0.15 0.30 0.10 0.10 GENERIC MARKING DIAGRAM* 6 XXXMG G 6X 0.30 INCHES NOM MAX −−− 0.043 −−− 0.004 0.035 0.039 0.008 0.010 0.006 0.009 0.078 0.086 0.082 0.086 0.049 0.053 0.026 BSC 0.010 0.014 0.018 0.006 BSC 0.006 0.012 0.004 0.004 MIN −−− 0.000 0.027 0.006 0.003 0.070 0.078 0.045 0.66 1 2.50 0.65 PITCH XXX = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *Date Code orientation and/or position may vary depending upon manufacturing location. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. STYLES ON PAGE 2 DOCUMENT NUMBER: DESCRIPTION: 98ASB42985B SC−88/SC70−6/SOT−363 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com SC−88/SC70−6/SOT−363 CASE 419B−02 ISSUE Y DATE 11 DEC 2012 STYLE 1: PIN 1. EMITTER 2 2. BASE 2 3. COLLECTOR 1 4. EMITTER 1 5. BASE 1 6. COLLECTOR 2 STYLE 2: CANCELLED STYLE 3: CANCELLED STYLE 4: PIN 1. CATHODE 2. CATHODE 3. COLLECTOR 4. EMITTER 5. BASE 6. ANODE STYLE 5: PIN 1. ANODE 2. ANODE 3. COLLECTOR 4. EMITTER 5. BASE 6. CATHODE STYLE 6: PIN 1. ANODE 2 2. N/C 3. CATHODE 1 4. ANODE 1 5. N/C 6. CATHODE 2 STYLE 7: PIN 1. SOURCE 2 2. DRAIN 2 3. GATE 1 4. SOURCE 1 5. DRAIN 1 6. GATE 2 STYLE 8: CANCELLED STYLE 9: PIN 1. EMITTER 2 2. EMITTER 1 3. COLLECTOR 1 4. BASE 1 5. BASE 2 6. COLLECTOR 2 STYLE 10: PIN 1. SOURCE 2 2. SOURCE 1 3. GATE 1 4. DRAIN 1 5. DRAIN 2 6. GATE 2 STYLE 11: PIN 1. CATHODE 2 2. CATHODE 2 3. ANODE 1 4. CATHODE 1 5. CATHODE 1 6. ANODE 2 STYLE 12: PIN 1. ANODE 2 2. ANODE 2 3. CATHODE 1 4. ANODE 1 5. ANODE 1 6. CATHODE 2 STYLE 13: PIN 1. ANODE 2. N/C 3. COLLECTOR 4. EMITTER 5. BASE 6. CATHODE STYLE 14: PIN 1. VREF 2. GND 3. GND 4. IOUT 5. VEN 6. VCC STYLE 15: PIN 1. ANODE 1 2. ANODE 2 3. ANODE 3 4. CATHODE 3 5. CATHODE 2 6. CATHODE 1 STYLE 16: PIN 1. BASE 1 2. EMITTER 2 3. COLLECTOR 2 4. BASE 2 5. EMITTER 1 6. COLLECTOR 1 STYLE 17: PIN 1. BASE 1 2. EMITTER 1 3. COLLECTOR 2 4. BASE 2 5. EMITTER 2 6. COLLECTOR 1 STYLE 18: PIN 1. VIN1 2. VCC 3. VOUT2 4. VIN2 5. GND 6. VOUT1 STYLE 19: PIN 1. I OUT 2. GND 3. GND 4. V CC 5. V EN 6. V REF STYLE 20: PIN 1. COLLECTOR 2. COLLECTOR 3. BASE 4. EMITTER 5. COLLECTOR 6. COLLECTOR STYLE 21: PIN 1. ANODE 1 2. N/C 3. ANODE 2 4. CATHODE 2 5. N/C 6. CATHODE 1 STYLE 22: PIN 1. D1 (i) 2. GND 3. D2 (i) 4. D2 (c) 5. VBUS 6. D1 (c) STYLE 23: PIN 1. Vn 2. CH1 3. Vp 4. N/C 5. CH2 6. N/C STYLE 24: PIN 1. CATHODE 2. ANODE 3. CATHODE 4. CATHODE 5. CATHODE 6. CATHODE STYLE 25: PIN 1. BASE 1 2. CATHODE 3. COLLECTOR 2 4. BASE 2 5. EMITTER 6. COLLECTOR 1 STYLE 26: PIN 1. SOURCE 1 2. GATE 1 3. DRAIN 2 4. SOURCE 2 5. GATE 2 6. DRAIN 1 STYLE 27: PIN 1. BASE 2 2. BASE 1 3. COLLECTOR 1 4. EMITTER 1 5. EMITTER 2 6. COLLECTOR 2 STYLE 28: PIN 1. DRAIN 2. DRAIN 3. GATE 4. SOURCE 5. DRAIN 6. DRAIN STYLE 29: PIN 1. ANODE 2. ANODE 3. COLLECTOR 4. EMITTER 5. BASE/ANODE 6. CATHODE STYLE 30: PIN 1. SOURCE 1 2. DRAIN 2 3. DRAIN 2 4. SOURCE 2 5. GATE 1 6. DRAIN 1 Note: Please refer to datasheet for style callout. If style type is not called out in the datasheet refer to the device datasheet pinout or pin assignment. DOCUMENT NUMBER: DESCRIPTION: 98ASB42985B SC−88/SC70−6/SOT−363 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 2 OF 2 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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