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NVMFD5C466NLWFT1G

NVMFD5C466NLWFT1G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TDFN8

  • 描述:

    MOSFET 2N-CH 40V 52A S08FL

  • 数据手册
  • 价格&库存
NVMFD5C466NLWFT1G 数据手册
NVMFD5C466NL MOSFET – Power, Dual N-Channel 40 V, 7.4 mW, 52 A Features • • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD5C466NLWF − Wettable Flank Option for Enhanced Optical Inspection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX 7.4 m @ 10 V 40 V Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RJC (Notes 1, 2, 3) TC = 25°C Power Dissipation RJC (Notes 1, 2) Continuous Drain Current RJA (Notes 1, 2, 3) Steady State TC = 25°C Power Dissipation RJA (Notes 1, 2) Pulsed Drain Current Value Unit VDSS 40 V VGS ±20 V ID 52 A Steady State PD ID PD D1 D1 W 3.0 1.5 198 A TJ, Tstg −55 to +175 °C IS 31.3 A Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, IL(pk) = 3 A) EAS 72 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Source Current (Body Diode) MARKING DIAGRAM A 15 IDM Operating Junction and Storage Temperature Range S2 S1 W 38 11 TA = 100°C TA = 25°C, tp = 10 s G2 G1 19 TA = 100°C TA = 25°C D2 D1 37 TC = 100°C TA = 25°C Dual N−Channel Symbol TC = 100°C 52 A 12.6 m @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter ID MAX Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 DFN8 5x6 (SO8FL) CASE 506BT A Y W ZZ S1 G1 S2 G2 XXXXXX AYWZZ D1 D1 D2 D2 D2 D2 = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit °C/W Junction−to−Case − Steady State RJC 4 Junction−to−Ambient − Steady State (Note 2) RJA 47.3 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2017 July, 2019 − Rev. 4 1 Publication Order Number: NVMFD5C466NL/D NVMFD5C466NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 A 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 29 VGS = 0 V, VDS = 40 V mV/°C TJ = 25 °C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 30 A 100 A nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 2.2 −4.7 VGS = 10 V ID = 10 A 6.2 7.4 VGS = 4.5 V ID = 10 A 10 12.6 gFS VDS = 15 V, ID = 25 A V mV/°C 33 m S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 997 VGS = 0 V, f = 1 MHz, VDS = 25 V 354 pF 13 Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 32 V; ID = 25 A 7.0 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 32 V; ID = 25 A 16 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Plateau Voltage VGP 3.3 td(ON) 10 1.5 VGS = 4.5 V, VDS = 32 V; ID = 25 A nC 2.3 2.2 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 32 V, ID = 25 A, RG = 1.0  tf 67 ns 26 60 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 10 A TJ = 25°C 0.9 TJ = 125°C 0.7 tRR ta tb 1.2 V 20 VGS = 0 V, dIS/dt = 100 A/s, IS = 25 A QRR 10 ns 10 8 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 s, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFD5C466NL TYPICAL CHARACTERISTICS 100 VGS = 10 to 5 V ID, DRAIN CURRENT (A) 50 3.8 V 40 3.6 V 30 3.4 V 20 3.2 V 10 70 60 50 40 30 TJ = 25°C 20 0.5 1.0 1.5 2.0 2.5 0 3.0 0 TJ = −55°C 2 1 3 4 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 20 15 10 5 4 5 6 7 8 9 10 6 5 VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 10 A TJ = 25°C 3 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (m) 0 25 0 80 10 14 13 TJ = 25°C VGS = 4.5 V 12 11 10 9 8 7 VGS = 10 V 6 5 4 5 10 15 20 25 30 40 35 45 50 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.1 2.0 ID = 10 A 1.9 V GS = 10 V 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 −50 −25 0 100K TJ = 150°C 10K IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) RDS(on), DRAIN−TO−SOURCE RESISTANCE (m) 0 VDS = 10 V 90 4.5 V 60 ID, DRAIN CURRENT (A) 70 TJ = 125°C 1K TJ = 85°C 100 TJ = 25°C 10 25 50 75 100 125 150 1 175 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NVMFD5C466NL TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 10K Ciss 1K Coss 100 Crss 10 1 TJ = 25°C VGS = 0 V f = 1 MHz 0 5 10 15 20 25 30 35 40 5 Qgs 4 10 Qgd 3 2 VDS = 32 V ID = 25 A 1 0 0 10 IS, SOURCE CURRENT (A) t, TIME (ns) TJ = 25°C 6 1 2 3 4 5 6 7 8 9 Figure 8. Gate−to−Source vs. Total Charge td(off) td(on) VGS = 4.5 V VDS = 32 V ID = 25 A 1 10 TJ = 125°C 1 0.1 100 10 VGS = 0 V TJ = 25°C 0.3 0.4 0.5 0.6 TJ = −55°C 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE () VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 TC = 25°C VGS ≤ 10 V Single Pulse TJ(initial) = 25°C 10 IPEAK (A) ID, DRAIN CURRENT (A) 7 Figure 7. Capacitance Variation tf 100 8 Qg, TOTAL GATE CHARGE (nC) 100 tr 1000 QT 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 10 10 s 10 TJ(initial) = 100°C 1 1 0.1 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 0.5 ms 1 ms 10 ms 100 1000 0.1 1.0E−05 1.0E−04 1.0E−03 1.0E−02 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NVMFD5C466NL TYPICAL CHARACTERISTICS 100 50% Duty Cycle R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response DEVICE ORDERING INFORMATION Marking Package Shipping† NVMFD5C466NLT1G 5C466L DFN8 (Pb−Free) 1500 / Tape & Reel NVMFD5C466NLWFT1G 466LWF DFN8 (Pb−Free, Wettable Flanks) 1500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual) CASE 506BT ISSUE F 1 2X SCALE 2:1 0.20 C D A B D1 8 7 6 ÉÉ ÉÉ ÉÉ PIN ONE IDENTIFIER NOTE 7 1 2 2X 0.20 C 5 DATE 23 NOV 2021 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 MM FROM THE TERMINAL TIP. 4. PROFILE TOLERANCE APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY. 7. A VISUAL INDICATOR FOR PIN 1 MUST BE LOCATED IN THIS AREA. E1 E 4X h 3 4 c TOP VIEW A1 0.10 C A DETAIL B 0.10 C NOTE 4 C SIDE VIEW DETAIL A D2 D3 4X e 1 SEATING PLANE NOTE 6 ALTERNATE CONSTRUCTION DETAIL A L K 4 DIM A A1 b b1 c D D1 D2 D3 E E1 E2 e G h K K1 L M N MILLIMETERS NOM MIN MAX −−− 0.90 1.10 −−− −−− 0.05 0.33 0.42 0.51 0.33 0.42 0.51 0.20 −−− 0.33 5.15 BSC 4.70 4.90 5.10 3.90 4.10 4.30 1.50 1.70 1.90 6.15 BSC 5.70 5.90 6.10 3.90 4.15 4.40 1.27 BSC 0.45 0.55 0.65 −−− −−− 12 _ 0.51 −−− −−− 0.56 −−− −−− 0.48 0.61 0.71 3.25 3.50 3.75 1.80 2.00 2.20 SOLDERING FOOTPRINT* DETAIL B 4.56 M 4X b1 N 4X 8 G 5 8X 2X 2X 2.08 8X E2 0.75 0.56 b K1 BOTTOM VIEW 0.10 C A B 0.05 C GENERIC MARKING DIAGRAM* 1 XXXXXX AYWZZ NOTE 3 4.84 4X 6.59 3.70 0.70 4X XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability 1.40 2.30 1.00 1.27 PITCH 5.55 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON50417E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DFN8 5X6, 1.27P DUAL FLAG (SO8FL−DUAL) PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
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