NVMFD6H840NLT1G

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. NVMFD6H840NL Power MOSFET 80 V, 6.9 mW, 74 A, Dual N−Channel Features • • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFD6H840NLWF − Wettable Flank Option for Enhanced Optical Inspection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 6.9 m @ 10 V 80 V 74 A 8.8 m @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RJC (Notes 1, 2, 3) TC = 25°C Power Dissipation RJC (Notes 1, 2) Continuous Drain Current RJA (Notes 1, 2, 3) Steady State Pulsed Drain Current Value Unit VDSS 80 V VGS ±20 V ID 74 A TC = 100°C TC = 25°C Steady State PD W 90 ID PD 1.5 D1 D1 TJ, Tstg −55 to +175 °C IS 75 A Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, IL(pk) = 4.7 A) EAS 297 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C A Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter MARKING DIAGRAM W 3.1 336 Source Current (Body Diode) S2 S1 A 14 IDM Operating Junction and Storage Temperature Range G2 10 TA = 100°C TA = 25°C, tp = 10 s D2 G1 45 TA = 100°C TA = 25°C Dual N−Channel D1 52 TC = 100°C TA = 25°C Power Dissipation RJA (Notes 1, 2) Symbol Symbol Value Unit Junction−to−Case − Steady State RJC 1.67 °C/W Junction−to−Ambient − Steady State (Note 2) RJA 48.7 1 DFN8 5x6 (SO8FL) CASE 506BT A Y W ZZ S1 G1 S2 G2 XXXXXX AYWZZ D1 D1 D2 D2 D2 D2 = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2019 April, 2019 − Rev. 0 1 Publication Order Number: NVMFD6H840NL/D NVMFD6H840NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 A 80 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 45.9 VGS = 0 V, VDS = 80 V mV/°C TJ = 25 °C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 96 A 100 A nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 2.0 −4.9 VGS = 10 V ID = 20 A 5.7 6.9 VGS = 4.5 V ID = 20 A 7.0 8.8 gFS VDS = 5 V, ID = 20 A V mV/°C 99 m S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 2002 VGS = 0 V, f = 1 MHz, VDS = 40 V 249 pF 11 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 40 V; ID = 20 A Total Gate Charge QG(TOT) 15 Threshold Gate Charge QG(TH) 3.0 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD 5.3 Plateau Voltage VGP 2.8 td(ON) 15 VGS = 4.5 V, VDS = 40 V; ID = 20 A 32 nC 5.1 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 64 V, ID = 20 A, RG = 2.5  tf 34 ns 52 22 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 20 A TJ = 25°C 0.8 TJ = 125°C 0.7 tRR ta tb 1.2 V 45 VGS = 0 V, dIS/dt = 100 A/s, IS = 20 A QRR 24 ns 22 50 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 s, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFD6H840NL TYPICAL CHARACTERISTICS 3.2 V 10 to 3.4 V 60 50 2.8 V 40 30 2.6 V 20 0 0 1 3 2 4 5 7 6 50 40 30 0 8 TJ = 125°C 0 0.5 1.0 1.5 TJ = −55°C 2.0 2.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 8 6 4 5 4 6 7 8 9 10 4.0 3.5 3.0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID = 20 A TJ = 25°C 3 TJ = 25°C 20 10 10 2 VDS = 10 V 60 VGS = 2.4 V 10 8 TJ = 25°C VGS = 4.5 V 7 6 VGS = 10 V 5 4 10 20 40 30 50 60 70 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.5 1000 ID = 20 A VGS = 10 V TJ = 175°C 100 2.0 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (m) 70 RDS(on), DRAIN−TO−SOURCE RESISTANCE (m) ID, DRAIN CURRENT (A) 70 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 80 3.0 V ID, DRAIN CURRENT (A) 80 1.5 1.0 TJ = 150°C TJ = 125°C 10 TJ = 85°C 1 0.1 TJ = 25°C 0.01 0.5 −50 −25 0 25 50 75 100 125 150 0.001 175 5 15 25 35 45 55 65 75 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NVMFD6H840NL TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 10K C, CAPACITANCE (pF) Ciss 1K Coss 100 1 Crss TJ = 25°C VGS = 0 V f = 1 MHz 0 1000 10 20 30 40 50 60 80 6 5 4 QGS QGD 3 2 1 0 10 5 0 15 20 25 Figure 8. Gate−to−Source vs. Total Charge VGS = 4.5 V VDS = 64 V ID = 20 A 30 VGS = 0 V td(off) tf tr 1 10 10 1 100 TJ = 125°C 0.3 0.4 TJ = 25°C 0.5 0.6 TJ = −55°C 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE () VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 100 IPEAK, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 7 Figure 7. Capacitance Variation 10 100 10 TC = 25°C VGS ≤ 10 V Single Pulse 1 0.1 8 QG, TOTAL GATE CHARGE (nC) td(on) 1 VDS = 40 V ID = 20 A TJ = 25°C 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 t, TIME (ns) 70 IS, SOURCE CURRENT (A) 10 10 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 10 s 0.5 ms 1 ms 10 ms 100 1000 TJ(initial) = 25°C 10 TJ(initial) = 100°C 1 0.00001 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TAV, TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NVMFD6H840NL TYPICAL CHARACTERISTICS 100 50% Duty Cycle R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 0.01 Single Pulse 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response DEVICE ORDERING INFORMATION Marking Package Shipping† NVMFD6H840NLT1G 6H840L DFN8 (Pb−Free) 1500 / Tape & Reel NVMFD6H840NLWFT1G 840LWF DFN8 (Pb−Free, Wettable Flanks) 1500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual) CASE 506BT ISSUE E DATE 26 FEB 2013 1 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.30 MM FROM THE TERMINAL TIP. 4. PROFILE TOLERANCE APPLIES TO THE EXPOSED PAD AS WELL AS THE TERMINALS. 5. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 6. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY. 7. A VISUAL INDICATOR FOR PIN 1 MUST BE LOCATED IN THIS AREA. 0.20 C D A B D1 8 7 6 ÉÉ ÉÉ PIN ONE IDENTIFIER NOTE 7 1 2 2X 0.20 C 5 E1 E 4X c 3 GENERIC MARKING DIAGRAM* h A1 4 1 XXXXXX AYWZZ TOP VIEW 0.10 C DETAIL A A 0.10 C NOTE 4 C SIDE VIEW DETAIL A D2 D3 4X e 1 L K 4 DETAIL B 4X b1 N 4X G *This information is generic. Please refer to device data sheet for actual part marking. MILLIMETERS MAX MIN MAX −−− 0.90 1.10 −−− −−− 0.05 0.33 0.42 0.51 0.33 0.42 0.51 0.20 −−− 0.33 5.15 BSC 4.70 4.90 5.10 3.90 4.10 4.30 1.50 1.70 1.90 6.15 BSC 5.70 5.90 6.10 3.90 4.15 4.40 1.27 BSC 0.45 0.55 0.65 −−− −−− 12 _ 0.51 −−− −−− 0.56 −−− −−− 0.48 0.61 0.71 3.25 3.50 3.75 1.80 2.00 2.20 ALTERNATE CONSTRUCTION DETAIL B M XXXXXX= Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability SEATING PLANE NOTE 6 DIM A A1 b b1 c D D1 D2 D3 E E1 E2 e G h K K1 L M N 8 5 8X SOLDERING FOOTPRINT* E2 4.56 0.75 b K1 BOTTOM VIEW 2X 0.10 C A B 0.05 C 2X 2.08 8X 0.56 NOTE 3 4.84 4X 1.40 2.30 6.59 3.70 0.70 4X 1.00 1.27 PITCH 5.55 DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON50417E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DFN8 5X6, 1.27P DUAL FLAG (SO8FL−DUAL) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2019 www.onsemi.com ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com ON Semiconductor Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 www.onsemi.com 1 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative