NVMFS2D3P04M8LT1G

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MOSFET - Power, Single P-Channel -40 V, 2.2 mW, -222 A NVMFS2D3P04M8L Features • • • • • • Low RDS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified NVMFWS2D3P04M8L − Wettable Flanks Product NVM Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com Parameter Symbol Value Unit VDSS −40 V Gate−to−Source Voltage VGS "20 V ID −222 A Continuous Drain Current RqJC (Notes 1, 2, 3) Power Dissipation RqJC (Notes 1, 2) Continuous Drain Current RqJA (Notes 1, 2, 3) Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current TC = 25°C Steady State TC = 100°C TC = 25°C Steady State PD S (1, 2, 3) ID W 205 D PD 1 W 3.8 1.9 DFN5/DFNW5 CASES 506EZ/507AZ S S S G XXXXXX AYWZZ D D D −900 A TJ, Tstg −55 to +175 °C IS −171 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 40 A) EAS 1516 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Source Current (Body Diode) MARKING DIAGRAM A −31 IDM Operating Junction and Storage Temperature Range P−Channel D (5, 6) −22 TA = 100°C TA = 25°C, tp = 10 ms G (4) 103 TA = 100°C TA = 25°C −222 A 3.3 mW @ −4.5 V −157 TC = 100°C TA = 25°C ID 2.2 mW @ −10 V −40 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Drain−to−Source Voltage RDS(on) V(BR)DSS A Y W ZZ = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information on page 5 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State (Drain) (Note 2) RqJC 0.7 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 39 °C/W 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2017 March, 2021 − Rev. 6 1 Publication Order Number: NVMFS2D3P04M8L/D NVMFS2D3P04M8L ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = −250 mA −40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/TJ Parameter Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 9 VGS = 0 V, VDS = −40 V mV/°C TJ = 25°C −1.0 TJ = 125°C −100 IGSS VDS = 0 V, VGS = "20 V VGS(TH) VGS = VDS, ID = −2.7 mA mA "100 nA −2.4 V ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Negative Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance RDS(on) −0.7 −4.6 mV/°C VGS = −10 V, ID = −30 A 1.6 2.2 VGS = −4.5 V, ID = −10 A 2.1 3.3 gFS VDS = −24 V, ID = −75 A 250 S Input Capacitance Ciss 5985 pF Output Capacitance Coss VGS = 0 V, f = 1.0 MHz, VDS = −20 V Reverse Transfer Capacitance Crss Froward Transconductance mW CHARGES AND CAPACITANCES Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Plateau Voltage VGP 4228 88 VDS = −20 V, ID = −50 A VGS = −4.5 V VGS = −10 V nC 73.5 157 13.9 VGS = −10 V, VDS = −20 V, ID = −50 A 26.2 17.8 2.53 V td(on) 16.3 ns tr 57.4 SWITCHING CHARACTERISTICS (Notes 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(off) VGS = −4.5 V, VDS = −20 V, ID = −50 A, RG = 2.5 W tf 508 373 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD VGS = 0 V, IS = −15 A TJ = 25°C −0.72 TJ = 125°C −0.57 tRR 159 Charge Time ta 94.6 Discharge Time tb Reverse Recovery Charge VGS = 0 V, dls/dt = 100 A/ms, Is = −50 A QRR −1.2 V ns 81.7 536 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. www.onsemi.com 2 NVMFS2D3P04M8L TYPICAL CHARACTERISTICS 400 4 V to 10 V 3.4 V −ID, DRAIN CURRENT (A) 300 300 3.2 V 250 200 150 2.8 V 100 2.6 V 50 2.4 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 0 0.4 0.8 1.2 1.6 2.0 2.8 2.4 120 TJ = 25°C 60 TJ = 125°C 4 3 5 Figure 2. Transfer Characteristics 6 4 2 1 2 4 3 5 6 7 8 9 10 VGS, GATE VOLTAGE (V) 4.0 3.5 3.0 VGS = 4.5 V 2.5 2.0 VGS = 10 V 1.5 1.0 0.5 0 0 50 100 150 1.E−03 VGS = 10 V ID = 30 A −IDSS, LEAKAGE (A) 1.2 1.0 0.8 300 350 400 TJ = 175°C 1.E−04 1.4 250 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.0 1.6 200 −ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), NORMALIZED DRAIN−TO− SOURCE ON−RESISTANCE 2 Figure 1. On−Region Characteristics 8 1.8 1 0 TJ = −55°C −VGS, GATE−TO−SOURCE VOLTAGE (V) 10 0 180 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 30 A 0 VDS = 3 V 240 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) −ID, DRAIN CURRENT (A) 350 TJ = 150°C TJ = 125°C 1.E−05 TJ = 85°C 1.E−06 1.E−07 TJ = 25°C 1.E−08 1.E−09 0.6 0.4 −50 −25 0 25 50 75 100 125 1.E−10 150 175 0 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) −VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NVMFS2D3P04M8L TYPICAL CHARACTERISTICS C, CAPACITANCE (pF) 10K −VGS, GATE−TO−SOURCE VOLTAGE (V) 100K CISS COSS 1K 100 10 VGS = 0 V TJ = 25°C f = 1 MHz CRSS 1 0.1 100 10 10 VDS = −20 V ID = −50 A TJ = 25°C 9 8 7 6 5 4 QGS 3 QGD 2 1 0 20 0 40 60 80 100 120 140 −VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Gate Charge 160 50 10K 1K IS, SOURCE CURRENT (A) t, SWITCHING TIME (ns) VGS = 0 V td(off) tf 100 tr td(on) 10 1 1 10 TJ = 25°C 10 50 TJ = 125°C 0.2 0.4 TJ = −55°C 0.6 0.8 1.0 1.2 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 TJ(initial) = 25°C 10 ms 0.5 ms 1 ms TC = 25°C Single Pulse VGS ≤ 10 V 1 100 IPEAK (A) ID, DRAIN CURRENT (A) 20 RG, GATE RESISTANCE (W) 100 0.1 30 0 1000 10 40 10 ms TJ(initial) = 100°C 10 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 1 1000 100 0.00001 0.0001 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 0.01 NVMFS2D3P04M8L TYPICAL CHARACTERISTICS 100 R(t) (°C/W) 50% Duty Cycle 10 20% 10% 5% 1 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 TIME (s) Figure 13. Thermal Response DEVICE ORDERING INFORMATION Marking Package Shipping† NVMFS2D3P04M8LT1G 2D3P04 CASE 506EZ, DFN5 (Pb−Free) 1500 / Tape & Reel NVMFWS2D3P04M8LT1G 2D3P4W CASE 507AZ, DFNW5 (Pb−Free) 1500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NVMFS2D3P04M8L PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 506EZ ISSUE O q q www.onsemi.com 6 NVMFS2D3P04M8L PACKAGE DIMENSIONS DFNW5 5x6 (SO8FL HE WF) CASE 507AZ ISSUE O q q www.onsemi.com 7 NVMFS2D3P04M8L ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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