NVMFS4C05N
MOSFET – Power, Single
N-Channel, SO-8 FL
30 V, 127 A
Features
•
•
•
•
•
•
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
Optimized Gate Charge to Minimize Switching Losses
NVMFS4C05NWF − Wettable Flanks Option for Enhanced Optical
Inspection
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
www.onsemi.com
V(BR)DSS
RDS(ON) MAX
ID MAX
2.8 mW @ 10 V
30 V
127 A
4.0 mW @ 4.5 V
D (5−8)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
27.2
A
Continuous Drain
Current RqJA
(Notes 1, 2 and 4)
TA = 25°C
Power Dissipation
RqJA (Notes 1, 2
and 4)
TA = 25°C
Continuous Drain
Current RqJC
(Notes 1, 2, 3
and 4)
TC = 25°C
TA = 80°C
ID
PD
21.6
3.61
A
TC = 80°C
Power Dissipation
RqJC (Notes 1, 2, 3
and 4)
TC = 25°C
PD
79
W
TA = 25°C, tp = 10 ms
IDM
174
A
TJ,
TSTG
−55 to
+175
°C
IS
72
A
EAS
42
mJ
TL
260
°C
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (TJ = 25°C, IL = 29 Apk, L = 0.1 mH)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
101
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using 650 mm2, 2 oz Cu pad.
3. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
4. Continuous DC current rating. Maximum current for pulses as long as one
second is higher but dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2016
July, 2019 − Rev. 2
MARKING
DIAGRAM
D
Steady
State
Operating Junction and Storage
Temperature
N−CHANNEL MOSFET
1
Continuous Drain
Current RqJC
(Notes 1, 2, 3
and 4)
Pulsed Drain
Current
S (1,2,3)
W
127
ID
G (4)
1
SO−8 FLAT LEAD
CASE 488AA
STYLE 1
S
S
S
G
D
4C05xx
AYWZZ
D
D
4C05N = Specific Device Code for
NVMFS4C05N
4C05WF= Specific Device Code of
NVMFS4C05NWF
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceabililty
ORDERING INFORMATION
Package
Shipping†
NVMFS4C05NT1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NVMFS4C05NT3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
NVMFS4C05NWFT1G
SO−8 FL
(Pb−Free)
1500 /
Tape & Reel
NVMFS4C05NWFT3G
SO−8 FL
(Pb−Free)
5000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Publication Order Number:
NVMFS4C05N/D
NVMFS4C05N
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Junction−to−Case (Drain)
Parameter
RqJC
1.9
Junction−to−Ambient – Steady State (Note 5)
RqJA
41.6
Unit
°C/W
5. Surface−mounted on FR4 board using 650 mm2, 2 oz Cu pad.
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
V
12
VGS = 0 V,
VDS = 24 V
mV/°C
TJ = 25°C
1.0
TJ = 125°C
10
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
±100
mA
nA
ON CHARACTERISTICS (Note 6)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
1.3
VGS(TH)/TJ
RDS(on)
2.2
−5.1
VGS = 10 V
ID = 30 A
2.3
2.8
VGS = 4.5 V
ID = 30 A
3.3
4.0
Forward Transconductance
gFS
VDS = 1.5 V, ID = 15 A
Gate Resistance
RG
TA = 25°C
68
0.3
1.0
V
mV/°C
mW
S
2.0
W
CHARGES AND CAPACITANCES
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
1972
VGS = 0 V, f = 1 MHz, VDS = 15 V
1215
Capacitance Ratio
CRSS/CISS
Total Gate Charge
QG(TOT)
14
Threshold Gate Charge
QG(TH)
3.3
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Gate Plateau Voltage
VGP
Total Gate Charge
pF
59
VGS = 0 V, VDS = 15 V, f = 1 MHz
VGS = 4.5 V, VDS = 15 V; ID = 30 A
0.030
nC
6.0
5.0
3.1
V
VGS = 10 V, VDS = 15 V; ID = 30 A
30
nC
td(ON)
11
tr
VGS = 4.5 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
32
QG(TOT)
SWITCHING CHARACTERISTICS (Note 7)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(OFF)
tf
7.0
td(ON)
8.0
tr
td(OFF)
VGS = 10 V, VDS = 15 V,
ID = 15 A, RG = 3.0 W
tf
ns
21
26
ns
26
5.0
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.77
TJ = 125°C
0.62
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 10 A
1.1
V
40.2
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 30 A
QRR
20.3
ns
19.9
30.2
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
6. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
7. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NVMFS4C05N
10 V
TJ = 25°C
4.5 V
3.8 V
3.6 V
4.2 V
ID, DRAIN CURRENT (A)
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
4V
3.4 V
3.2 V
3.0 V
2.8 V
2.6 V
0
1
2
3
5
4
ID = 30 A
TJ = 25°C
2.0
2.5
3.0
3.5
4.0
9
8
7
6
5
4
3
2
4.0
5.0
6.0
7.0
8.0
9.0
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
4.5
12
TJ = 25°C
11
10
9
8
7
6
5
4
VGS = 4.5 V
3
VGS = 10 V
2
1
0
20
40
60
80
100
120
140
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. VGS
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.8
10000
VGS = 0 V
ID = 30 A
VGS = 10 V
TJ = 150°C
1.5
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
TJ = −55°C
1.5
Figure 2. Transfer Characteristics
10
1.6
TJ = 25°C
Figure 1. On−Region Characteristics
11
1.7
TJ = 125°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
12
1
3.0
140
130 VDS = 5 V
120
110
100
90
80
70
60
50
40
30
20
10
0
0
0.5 1.0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
TYPICAL CHARACTERISTICS
1.4
1.3
1.2
1.1
1.0
1000
TJ = 125°C
100
TJ = 85°C
0.9
0.8
0.7
−50
−25
0
25
50
75
100
125
150
175
10
5
10
15
20
25
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
www.onsemi.com
3
30
NVMFS4C05N
TYPICAL CHARACTERISTICS
VGS = 0 V
TJ = 25°C
2750
2500
C, CAPACITANCE (pF)
VGS, GATE−TO−SOURCE VOLTAGE (V)
3000
2250
Ciss
2000
1750
1500
1250
1000
Coss
750
500
250
0
Crss
0
5
10
15
20
25
30
QT
8
6
4
Qgd
Qgs
TJ = 25°C
VDD = 15 V
VGS = 10 V
ID = 30 A
2
0
0
4
8
12
16
24
28
Qg, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
20
VDD = 15 V
ID = 15 A
VGS = 10 V
IS, SOURCE CURRENT (A)
18
td(off)
td(on)
100
tr
tf
10
1
10
16
14
12
10
8
6
4
0
0.4
100
TJ = 125°C
TJ = 25°C
0.5
0.6
0.7
0.8
0.9
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
ID, DRAIN CURRENT (A)
100
10 ms
10
100 ms
1
1 ms
0.1
0.01
0.001
0.0001
10 ms
0 V < VGS < 10 V
Single Pulse
TC = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.1
dc
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
www.onsemi.com
4
32
VGS = 0 V
2
1
20
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
t, TIME (ns)
10
100
1.0
NVMFS4C05N
TYPICAL CHARACTERISTICS
100
R(t) (°C/W)
Duty Cycle = 50%
10 20%
10%
5%
2%
1
1%
0.1
0.01
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 12. Thermal Response
1000
120
ID, DRAIN CURRENT (A)
100
GFS (S)
80
60
40
20
0
0
10
20
30
40
50
60
70
100
TA = 25°C
10
1
1.E−06
80
TA = 85°C
1.E−05
1.E−04
ID (A)
PULSE WIDTH (SECONDS)
Figure 13. GFS vs. ID
Figure 14. Avalanche Characteristics
www.onsemi.com
5
1.E−03
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
DATE 25 JUN 2018
SCALE 2:1
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
A1
4
TOP VIEW
C
DETAIL A
0.10 C
SEATING
PLANE
A
0.10 C
SIDE VIEW
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
GENERIC
MARKING DIAGRAM*
DETAIL A
1
0.10
b
C A B
0.05
c
8X
XXXXXX
AYWZZ
e/2
e
L
1
4
K
RECOMMENDED
SOLDERING FOOTPRINT*
E2
PIN 5
(EXPOSED PAD)
L1
M
2X
0.495
4.560
2X
1.530
G
D2
2X
BOTTOM VIEW
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
0.475
3.200
4.530
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
1.330
STYLE 2:
2X
PIN 1. ANODE
0.905
2. ANODE
3. ANODE
4. NO CONNECT
0.965
5. CATHODE
1
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products
and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information
provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may
vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems
or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should
Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal
Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
onsemi Website: www.onsemi.com
◊
TECHNICAL SUPPORT
North American Technical Support:
Voice Mail: 1 800−282−9855 Toll Free USA/Canada
Phone: 011 421 33 790 2910
Europe, Middle East and Africa Technical Support:
Phone: 00421 33 790 2910
For additional information, please contact your local Sales Representative
