DATA SHEET
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MOSFET - Power, Single
N-Channel
V(BR)DSS
RDS(ON) MAX
ID MAX
40 V
0.7 mW @ 10 V
378 A
40 V, 0.7 mW, 378 A
NVMFS5C404N
D (5,6)
Features
•
•
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFS5C404NWF − Wettable Flank Option for Enhanced Optical
Inspection
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
G (4)
S (1,2,3)
N−CHANNEL MOSFET
MARKING
DIAGRAMS
DFN5
CASE 488AA
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
378
A
Parameter
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 100°C
TC = 25°C
Pulsed Drain Current
PD
TC = 100°C
TA = 25°C
Power Dissipation
RqJA (Notes 1, 2)
267
Steady
State
100
ID
TA = 100°C
TA = 25°C
W
200
PD
W
3.9
1.9
900
A
TJ, Tstg
−55 to
+175
°C
IS
191
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 38 A)
EAS
907
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Source Current (Body Diode)
D
D
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
A
53
IDM
Operating Junction and Storage Temperature
Range
DFNW5
CASE 507BA
D
XXXXXX
AYWZZ
37
TA = 100°C
TA = 25°C, tp = 10 ms
1
D
S
S
S
G
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State
RqJC
0.75
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
39
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2015
October, 2021 − Rev. 6
1
Publication Order Number:
NVMFS5C404N/D
NVMFS5C404N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
19.7
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25 °C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
2.0
4.0
−6.2
VGS = 10 V
gFS
ID = 50 A
VDS =15 V, ID = 50 A
0.57
V
mV/°C
0.7
210
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
8400
VGS = 0 V, f = 1 MHz, VDS = 25 V
4600
pF
120
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 20 V; ID = 50 A
Threshold Gate Charge
QG(TH)
22
Gate−to−Source Charge
QGS
35
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
4.3
td(ON)
16
VGS = 10 V, VDS = 20 V; ID = 50 A
128
nC
26
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 10 V, VDS = 20 V,
ID = 50 A, RG = 2.5 W
tf
113
ns
77
109
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.76
TJ = 125°C
0.63
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 50 A
1.2
V
96
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
QRR
49
ns
47
189
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVMFS5C404N
TYPICAL CHARACTERISTICS
600
10 V
700 8 V
7V
600
VDS = 10 V
6.5 V
5.8 V
500
5.6 V
400
5.4 V
300
5.2 V
5.0 V
200
4.8 V
4.6 V
4.4 V
100
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
0
ID, DRAIN CURRENT (A)
6V
0
0.5
1.0
2.0
1.5
2.5
300
TJ = 25°C
200
TJ = 125°C
100
Figure 2. Transfer Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
4
5
6
7
8
9
10
VGS, GATE VOLTAGE (V)
0.64
0.62
0.60
0.58
0.56
0.54
0.52
0.50
0
100
200
300
400
500
600
700
800
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1.E−03
2.1
VGS = 10 V
ID = 50 A
1.7
IDSS, LEAKAGE (A)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
6.0
5.0
Figure 1. On−Region Characteristics
4.0
1.9
TJ = −55°C
4.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
IDS = 25 A
3
400
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
4.5
0.0
500
0
3.0
3.0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
800
1.5
1.3
1.1
1.E−04
TJ = 150°C
1.E−05
TJ = 125°C
1.E−06
0.9
TJ = 85°C
0.7
−50 −25
0
25
50
75
100
125
150
175
1.E−07
0
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NVMFS5C404N
TYPICAL CHARACTERISTICS
CISS
COSS
1E+3
1E+2
CRSS
1E+1
VGS = 0 V
TJ = 25°C
f = 1 MHz
5
0
10
15
20
25
30
35
QGD
4
VDS = 20 V
ID = 50 A
TJ = 25°C
2
0
10 20 30 40 50 60 70 80 90 100 110 120 130
0
tf
tr
td(on)
1
10
10
5
TJ = 150°C
1
100
TJ = 125°C
0.3
0.4
0.5
0.6
TJ = 25°C
0.7
0.8
TJ = −55°C
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
100
10 ms
TC = 25°C
Single Pulse
VGS ≤ 10 V
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
100
TJ(initial) = 25°C
IPEAK (A)
IDS, DRAIN CURRENT (A)
QGS
50
td(off)
1000
0.1
6
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
10
1
8
Figure 7. Capacitance Variation
100
10
QT
QG, TOTAL GATE CHARGE (nC)
VGS = 10 V
VDS = 20 V
ID = 50 A
1
10
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
1000
t, TIME (ns)
40
IS, SOURCE CURRENT (A)
C, CAPACITANCE (pF)
1E+4
1E+0
VGS, GATE−TO−SOURCE VOLTAGE (V)
1E+5
0.5 ms
1 ms
10 ms
TJ(initial) = 100°C
10
100
1000
1
1E−04
1E−03
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
1E−02
NVMFS5C404N
100
RqJA(t) (°C/W)
50% Duty Cycle
10
20%
10%
5%
1
2%
1%
NVMFS5C404N 650 mm2, 2 oz., Cu Single Layer Pad
0.1
Single Pulse
0.01
1E−06
1E−05
1E−04
1E−03
1E−02
1E−01
1E+00
1E+01
1E+02
1E+03
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Case
Marking
Package
Shipping†
488AA
5C404N
DFN5
(Pb−Free)
1500 / Tape & Reel
488A
404NWF
DFN5
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
NVMFS5C404NT3G
488AA
5C404N
DFN5
(Pb−Free)
5000 / Tape & Reel
NVMFS5C404NWFT3G
488AA
404NWF
DFN5
(Pb−Free, Wettable Flanks)
5000 / Tape & Reel
NVMFS5C404NAFT1G
488AA
5C404N
DFN5
(Pb−Free)
1500 / Tape & Reel
NVMFS5C404NWFAFT1G
488AA
404NWF
DFN5
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
NVMFS5C404NWFET1G
507BA
404NWF
DFN5W
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
NVMFS5C404NWFET3G
507BA
404NWF
DFN5W
(Pb−Free, Wettable Flanks)
5000 / Tape & Reel
Device
NVMFS5C404NT1G
NVMFS5C404NWFT1G
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
DATE 25 JUN 2018
SCALE 2:1
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
A1
4
TOP VIEW
C
DETAIL A
0.10 C
SEATING
PLANE
A
0.10 C
SIDE VIEW
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
GENERIC
MARKING DIAGRAM*
DETAIL A
1
0.10
b
C A B
0.05
c
8X
XXXXXX
AYWZZ
e/2
e
L
1
4
K
RECOMMENDED
SOLDERING FOOTPRINT*
E2
PIN 5
(EXPOSED PAD)
L1
M
2X
0.495
4.560
2X
1.530
G
D2
2X
BOTTOM VIEW
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
0.475
3.200
4.530
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
1.330
STYLE 2:
2X
PIN 1. ANODE
0.905
2. ANODE
3. ANODE
4. NO CONNECT
0.965
5. CATHODE
1
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFNW5 5x6 (FULL−CUT SO8FL WF)
CASE 507BA
ISSUE A
DATE 03 FEB 2021
q
q
GENERIC
MARKING DIAGRAM*
1
XXXXXX
AYWZZ
XXXXXX
A
Y
W
ZZ
= Specific Device Code *This information is generic. Please refer to
= Assembly Location
device data sheet for actual part marking.
= Year
Pb−Free indicator, “G” or microdot “ G”,
= Work Week
may or may not be present. Some products
= Lot Traceability
may not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON26450H
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DFNW5 5x6 (FULL−CUT SO8FL WF)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
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