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onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all
liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET – Power, Single
N-Channel
40 V, 1.0 mW, 277 A
NVMFS5C420NL
Features
•
•
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFS5C420NLWF − Wettable Flank Option for Enhanced Optical
Inspection
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
RDS(ON) MAX
1.0 mW @ 10 V
40 V
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
D (5,6)
Pulsed Drain Current
Value
Unit
VDSS
40
V
VGS
±20
V
ID
277
A
TC = 25°C
Steady
State
PD
S (1,2,3)
W
146
ID
PD
W
3.8
1.9
IDM
900
A
TJ, Tstg
−55 to
+175
°C
IS
121.4
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 24 A)
EAS
1541
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
D
S
S
S
G
D
XXXXXX
AYWZZ
D
D
XXXXXX = 5C420L
XXXXXX = (NVMFS5C420NL) or
XXXXXX = 420LWF
XXXXXX = (NVMFS5C420NLWF)
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
MARKING
DIAGRAM
A
45
32
TA = 100°C
TA = 25°C, tp = 10 ms
N−CHANNEL MOSFET
73
TA = 100°C
TA = 25°C
G (4)
196
TC = 100°C
TA = 25°C
Power Dissipation
RqJA (Notes 1, 2)
Symbol
TC = 100°C
277 A
1.4 mW @ 4.5 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
ID MAX
Symbol
Value
Unit
Junction−to−Case − Steady State
RqJC
1.0
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
39
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
September, 2019 − Rev. 0
1
Publication Order Number:
NVMFS5C420NL/D
NVMFS5C420NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
18.5
VGS = 0 V,
VDS = 40 V
mV/°C
TJ = 25°C
10
TJ = 125°C
100
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 200 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
1.2
2.2
−5.4
V
mV/°C
Drain−to−Source On Resistance
RDS(on)
VGS = 4.5 V
ID = 50 A
1.2
1.4
mW
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V
ID = 50 A
0.8
1.0
mW
Forward Transconductance
gFS
VDS = 5 V, ID = 50 A
180
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
Reverse Transfer Capacitance
CRSS
7020
VGS = 0 V, f = 1 MHz, VDS = 20 V
3130
pF
95
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 32 V; ID = 50 A
47
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 32 V; ID = 50 A
100
Threshold Gate Charge
QG(TH)
8.7
Gate−to−Source Charge
QGS
16
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
2.8
td(ON)
37
VGS = 10 V, VDS = 32 V; ID = 50 A
nC
nC
14
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 32 V,
ID = 50 A, RG = 2.5 W
tf
46
ns
76
31
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
Charge Time
Discharge Time
Reverse Recovery Charge
VSD
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.8
TJ = 125°C
0.65
tRR
ta
tb
1.2
V
75
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
QRR
37
ns
38
96
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NVMFS5C420NL
TYPICAL CHARACTERISTICS
400
350
3.6 V
300
250
200
3.2 V
150
100
2.8 V
50
0
1
2
250
200
150
TJ = 25°C
100
0
3
TJ = 125°C
0
4
7
6
5
4
3
2
1
0
3
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
6
5
Figure 2. Transfer Characteristics
8
3.0
TJ = 25°C
2.5
2.0
1.5
VGS = 4.5 V
1.0
VGS = 10 V
0.5
0
20
60
100
140
180
220
260
300
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
3.0
1M
TJ = 175°C
VGS = 10 V
ID = 50 A
100K
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
3
Figure 1. On−Region Characteristics
TJ = 25°C
ID = 50 A
2.0
1.5
1.0
TJ = 125°C
10K
TJ = 85°C
1K
100
TJ = 25°C
10
0.5
0
−50
TJ = −55°C
2
VGS, GATE−TO−SOURCE VOLTAGE (V)
9
2.5
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
10
2
300
50
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
350
ID, DRAIN CURRENT (A)
400
VGS = 10 V to 4.0 V
−25
0
25
50
75
100
125
150
175
1
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NVMFS5C420NL
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
10K
C, CAPACITANCE (pF)
CISS
COSS
1K
100
CRSS
10
1
VGS = 0 V
TJ = 25°C
f = 1 MHz
5
0
10
15
20
25
35
30
40
6
5
4
QGD
QGS
3
VDS = 32 V
ID = 50 A
TJ = 25°C
2
1
0
10
0
20
30
40
50
60
70
80
90
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
VGS = 0 V
IS, SOURCE CURRENT (A)
td(on)
10
VGS = 4.5 V
VDS = 32 V
ID = 50 A
1
100
100
100
t, TIME (ns)
8
7
QG, TOTAL GATE CHARGE (nC)
tf
tr
10
10
1
0.1
100
TJ = 125°C
TJ = −55°C
TJ = 25°C
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
1000
1000
TJ(initial) = 25°C
100
100
10 ms
10
1
0.1
IPEAK, (A)
ID, DRAIN CURRENT (A)
9
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
td(off)
1
10
TC = 25°C
VGS ≤ 10 V
Single Pulse
0.5 ms
1 ms
10 ms
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
TJ(initial) = 100°C
10
1
100
1000
0.00001
0.0001
0.001
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
0.01
NVMFS5C420NL
TYPICAL CHARACTERISTICS
100
R(t) (°C/W)
50% Duty Cycle
10
20%
10%
5%
1
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping†
NVMFS5C420NLT1G
5C420L
DFN5
(Pb−Free)
1500 / Tape & Reel
NVMFS5C420NLWFT1G
420LWF
DFN5
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NVMFS5C420NL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
2X
0.20 C
D
2
A
B
D1
2X
0.20 C
3
q
E
2
2
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
4X
E1
1
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
c
A1
4
TOP VIEW
C
DETAIL A
0.10 C
SEATING
PLANE
A
0.10 C
SIDE VIEW
RECOMMENDED
SOLDERING FOOTPRINT*
DETAIL A
2X
0.10
b
C A B
0.05
c
0.495
8X
4.560
1.530
e/2
e
1
4
3.200
K
G
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
2X
L
PIN 5
(EXPOSED PAD)
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.30
5.15
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
E2
L1
4.530
M
1.330
2X
0.905
1
0.965
D2
4X
1.000
4X 0.750
BOTTOM VIEW
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
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