NVMFS5C420NT1G

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Other names and brands may be claimed as the property of others. MOSFET – Power, Single N-Channel 40 V, 1.1 mW, 268 A NVMFS5C420N Features • • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS5C420NWF − Wettable Flank Option for Enhanced Optical Inspection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 40 V 1.1 mW @ 10 V 268 A MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) D (5,6) Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 268 A Parameter Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current 190 PD TC = 100°C TA = 25°C Steady State S (1,2,3) W 150 ID A 43 PD W 3.8 1.9 IDM 900 A TJ, Tstg −55 to +175 °C IS 125 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 24 A) EAS 1541 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C TA = 25°C, tp = 10 ms Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter MARKING DIAGRAM 30 TA = 100°C Operating Junction and Storage Temperature Range N−CHANNEL MOSFET 75 TA = 100°C TA = 25°C G (4) D 1 DFN5 (SO−8FL) CASE 488AA STYLE 1 S S S G D XXXXXX AYWZZ D D XXXXXX = 5C420N XXXXXX = (NVMFS5C420N) or XXXXXX = 420NWF XXXXXX = (NVMFS5C420NWF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION Symbol Value Unit Junction−to−Case − Steady State RqJC 1.0 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 39 See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2019 September, 2020 − Rev. 0 1 Publication Order Number: NVMFS5C420N/D NVMFS5C420N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 20 VGS = 0 V, VDS = 40 V mV/°C TJ = 25 °C 10 TJ = 125°C 100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 200 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 2.0 4.0 −7.7 VGS = 10 V gFS ID = 50 A VDS = 5 V, ID = 50 A 0.9 V mV/°C 1.1 161 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 5340 VGS = 0 V, f = 1 MHz, VDS = 20 V 3500 pF 140 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 32 V; ID = 50 A Threshold Gate Charge QG(TH) 5.3 Gate−to−Source Charge QGS 21 Gate−to−Drain Charge QGD Plateau Voltage VGP 4.7 td(ON) 22 VGS = 10 V, VDS = 32 V; ID = 50 A 82 nC 23 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 32 V, ID = 50 A, RG = 2.5 W tf 19 ns 54 20 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.8 TJ = 125°C 0.65 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 50 A 1.2 V 113 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 52 ns 61 236 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS5C420N TYPICAL CHARACTERISTICS 500 450 400 ID, DRAIN CURRENT (A) 6.0 V 350 300 250 5.2 V 200 150 4.8 V 100 4.4 V 4.0 V 50 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 0 1 2 350 300 250 200 150 TJ = 25°C 100 0 3 TJ = 125°C 0 1 2 3 TJ = −55°C 4 5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 8 TJ = 25°C ID = 50 A 7 6 5 4 3 2 1 0 400 50 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 500 VGS = 10 V to 8.0 V 450 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 4.0 6 TJ = 25°C 3.5 3.0 2.5 2.0 1.5 VGS = 10 V 1.0 0.5 0 20 60 100 140 180 220 260 300 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.0 TJ = 175°C 100K IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 1M VGS = 10 V ID = 50 A 1.5 1.0 0.5 −50 TJ = 125°C 10K TJ = 85°C 1K 100 TJ = 25°C 10 −25 0 25 50 75 100 125 150 175 1 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NVMFS5C420N TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 10K C, CAPACITANCE (pF) CISS COSS 1K 100 CRSS 10 1 VGS = 0 V TJ = 25°C f = 1 MHz 0 5 10 15 20 25 30 40 35 6 QGD QGS 5 4 3 VDS = 32 V ID = 50 A TJ = 25°C 2 1 0 0 20 10 40 30 50 70 60 Figure 8. Gate−to−Source vs. Total Charge 100 VGS = 0 V IS, SOURCE CURRENT (A) tr td(on) 10 VGS = 10 V VDS = 32 V ID = 50 A 1 90 80 Figure 7. Capacitance Variation 100 t, TIME (ns) 8 7 QG, TOTAL GATE CHARGE (nC) tf 10 10 1 0.1 100 TJ = 125°C TJ = −55°C TJ = 25°C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 1000 TJ(initial) = 25°C 100 100 10 ms 10 1 0.1 IPEAK, (A) ID, DRAIN CURRENT (A) 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) td(off) 1 10 TC = 25°C VGS ≤ 10 V Single Pulse RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 0.5 ms 1 ms 10 ms TJ(initial) = 100°C 10 1 100 1000 0.00001 0.0001 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 0.01 NVMFS5C420N TYPICAL CHARACTERISTICS 100 R(t) (°C/W) 50% Duty Cycle 10 20% 10% 5% 1 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device Marking Package Shipping† NVMFS5C420NT1G 5C420N DFN5 (Pb−Free) 1500 / Tape & Reel NVMFS5C420NWFT1G 420NWF DFN5 (Pb−Free, Wettable Flanks) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NVMFS5C420N PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE M 2X 0.20 C D 2 A B D1 2X 0.20 C 2 2 3 DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q 4X E1 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. q E c A1 4 TOP VIEW C SEATING PLANE DETAIL A 0.10 C A 0.10 C SIDE VIEW 0.10 8X b C A B 0.05 c DETAIL A RECOMMENDED SOLDERING FOOTPRINT* 2X 0.495 e/2 1 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 4.560 2X e L MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.15 5.00 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.15 6.30 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ 1.530 4 K 3.200 PIN 5 (EXPOSED PAD) 4.530 E2 L1 M 1.330 2X G 0.905 D2 1 0.965 BOTTOM VIEW 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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