NVMFS5C680NL
Power MOSFET
60 V, 27.5 mW, 21 A, Single N−Channel
Features
•
•
•
•
•
•
Small Footprint (5 x 6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
NVMFS5C680NLWF − Wettable Flanks Product
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
60 V
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
ID
21
A
Continuous Drain
Current RqJC
(Notes 1, 2, 3, 4)
TC = 25°C
Power Dissipation
RqJC (Notes 1, 2, 3)
Continuous Drain
Current RqJA
(Notes 1 & 3, 4)
Steady
State
TC = 100°C
TC = 25°C
Power Dissipation
RqJA (Notes 1, 3)
Pulsed Drain Current
Steady
State
PD
12
ID
G (4)
A
8.1
S (1, 2, 3)
5.7
PD
W
3.4
TA = 100°C
TA = 25°C, tp = 10 ms
MARKING
DIAGRAM
1.7
IDM
87
A
−55 to
+175
°C
IS
20
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 1.5 A)
EAS
44.6
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Operating Junction and Storage Temperature
Source Current (Body Diode)
N−Channel
D (5 − 8)
W
24
TA = 100°C
TA = 25°C
21 A
43.0 mW @ 4.5 V
15
TC = 100°C
TA = 25°C
ID MAX
27.5 mW @ 10 V
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
RDS(on) MAX
TJ, Tstg
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
D
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
S
S
S
G
D
XXXXXX
AYWZZ
D
D
XXXXXX = 5C680L (NVMFS5C680NL) or
680LWF (NVMFS5C680NLWF)
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
Unit
ORDERING INFORMATION
Junction−to−Case − Steady State (Note 3)
RqJC
6.3
°C/W
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Junction−to−Ambient − Steady State (Note 3)
RqJA
44
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2017
February, 2018 − Rev. 0
1
Publication Order Number:
NVMFS5C680NL/D
NVMFS5C680NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
VGS = 0 V,
VDS = 60 V
V
TJ = 25°C
10
TJ = 125°C
250
100
mA
IGSS
VDS = 0 V, VGS = 20 V
nA
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 13 mA
2.2
V
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 7.5 A
22.9
27.5
mW
VGS = 4.5 V, ID = 7.5 A
35.8
43.0
gFS
VDS = 15 V, ID = 10 A
20
S
Input Capacitance
Ciss
330
pF
Output Capacitance
Coss
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
Reverse Transfer Capacitance
Crss
5
Total Gate Charge
QG(TOT)
5.8
nC
Threshold Gate Charge
QG(TH)
0.8
nC
ON CHARACTERISTICS (Note 5)
Forward Transconductance
1.2
CHARGES AND CAPACITANCES
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 48 V, ID = 7.5 A
172
1.3
0.6
VGS = 4.5 V, VDS = 48 V, ID = 7.5 A
2.7
nC
5
ns
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 10 V, VDS = 48 V,
ID = 7.5 A, RG = 1.0 W
tf
12.5
14
2.5
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.87
TJ = 125°C
0.76
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 7.5 A
18
VGS = 0 V, dlS/dt = 100 A/ms,
IS = 7.5 A
QRR
1.2
V
ns
8.3
9.7
7.5
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVMFS5C680NL
TYPICAL CHARACTERISTICS
30
30
VDS = 10 V
25
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
VGS = 3.8 V to 10 V
3.6 V
20
3.4 V
15
3.2 V
10
3.0 V
2.8 V
2.6 V
5
20
15
10
TJ = 25°C
5
TJ = 125°C
0
TJ = −55°C
0
0
0.5
1.0
1.5
2.0
2.5
0
2
3
4
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
50
TJ = 25°C
ID = 10 A
45
40
35
30
25
20
3
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
25
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
5
50
TJ = 25°C
45
40
35
VGS = 4.5 V
30
25
VGS = 10 V
20
15
5
6
7
8
9
10
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
VGS = 10 V
ID = 7.5 A
TJ = 150°C
1.8
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
10000
2.0
1.6
1.4
1.2
1.0
1000
TJ = 125°C
100
TJ = 85°C
10
0.8
0.6
−50 −25
1
0
25
50
75
100
125
150
175
5
15
25
35
45
55
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVMFS5C680NL
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
CISS
COSS
100
10
VGS = 0 V
TJ = 25°C
f = 1 MHz
1
0
CRSS
10
20
30
40
50
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
1000
8
6
4
QGD
QGS
VDS = 48 V
TJ = 25°C
ID = 7.5 A
2
0
60
0
1
2
3
4
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source vs. Total Charge
100
6
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
8
IS, SOURCE CURRENT (A)
VGS = 0 V
t, TIME (ns)
td(off)
tr
10
td(on)
tf
1
VGS = 10 V
VDS = 48 V
4
2
TJ = 125°C
TJ = 25°C
TJ = −55°C
0
1
21
11
31
41
0.4
0.5
0.6
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
TC = 25°C
VGS ≤ 10 V
Single Pulse
100
10
TJ (initial) = 25°C
IPEAK, (A)
ID, DRAIN CURRENT (A)
6
10
1
1
RDS(on) Limit
Thermal Limit
Package Limit
0.1
0.1
1
10
10 ms
0.5 ms
10 ms
100
TJ (initial) = 100°C
1 ms
0.1
0.00001
1000
0.0001
0.001
VDS (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
0.01
NVMFS5C680NL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
R(t) (°C/W)
10
1
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping†
NVMFS5C680NLT1G
5C680L
DFN5
(Pb−Free)
1500 / Tape & Reel
NVMFS5C680NLWFT1G
680LWF
DFN5
(Pb−Free)
1500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NVMFS5C680NL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
2X
0.20 C
D
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
C
SEATING
PLANE
DETAIL A
0.10 C
A
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.15
6.30
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
0.10 C
SIDE VIEW
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
RECOMMENDED
SOLDERING FOOTPRINT*
DETAIL A
2X
0.10
b
C A B
0.05
c
0.495
8X
4.560
2X
1.530
e/2
e
L
1
4
3.200
K
4.530
E2
PIN 5
(EXPOSED PAD)
L1
M
1.330
2X
0.905
1
G
0.965
D2
4X
BOTTOM VIEW
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NVMFS5C680NL/D
