NVMFS6D1N08H
Power MOSFET
80 V, 5.5 mW, 89 A, Single N−Channel
Features
•
•
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVMFSW6D1N08H − Wettable Flank Option for Enhanced Optical
Inspection
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free, Beryllium Free
and are RoHS Compliant
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V(BR)DSS
RDS(ON) MAX
ID MAX
80 V
5.5 mW @ 10 V
89 A
Typical Applications
•
•
•
•
Synchronous Rectification
AC−DC and DC−DC Power Supplies
AC−DC Adapters (USB PD) SR
Load Switch
D (5,6)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
G (4)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
80
V
S (1,2,3)
Gate−to−Source Voltage
VGS
±20
V
N−CHANNEL MOSFET
ID
89
A
PD
104
W
ID
17
A
Parameter
Continuous Drain
Current RqJC (Note 1)
Power Dissipation
RqJC (Note 1)
TC = 25°C
Steady
State
D
TA = 25°C
Continuous Drain
Current RqJA
(Notes 1, 2)
Steady
State
Power Dissipation
RqJA (Notes 1, 2)
Pulsed Drain Current
MARKING
DIAGRAM
PD
TA = 25°C, tp = 10 ms
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (IAV = 5.9 A)
Lead Temperature Soldering Reflow for Soldering Purposes (1/8″ from case for 10 s)
3.8
W
IDM
468
A
TJ, Tstg
−55 to
+175
°C
IS
87
A
EAS
465
mJ
TL
300
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
S
S
S
G
D
XXXXXX
AYWZZ
D
D
XXXXXX = 6D1N08
XXXXXX = (NVMFS6D1N08H) or
XXXXXX = W6D1N8
XXXXXX = (NVMFSW6D1N08H)
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 6 of this data sheet.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State (Note 1)
RqJC
1.44
°C/W
Junction−to−Ambient − Steady State (Note 1)
RqJA
40
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using 1 in2 pad size, 1 oz. Cu pad.
© Semiconductor Components Industries, LLC, 2018
August, 2018 − Rev. 0
1
Publication Order Number:
NVMFS6D1N08H/D
NVMFS6D1N08H
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
80
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
ID = 250 mA, ref to 25°C
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
VGS = 0 V,
VDS = 80 V
V
43.8
mV/°C
TJ = 25°C
10
TJ = 125°C
100
IGSS
VDS = 0 V, VGS = 20 V
100
mA
nA
ON CHARACTERISTICS (Note 3)
VGS(TH)
VGS = VDS, ID = 120 mA
VGS(TH)/TJ
ID = 250 mA, ref to 25°C
−7.08
RDS(on)
VGS = 10 V, ID = 20 A
4.5
Forward Transconductance
gFS
VDS = 15 V, ID = 20 A
80
S
Gate−Resistance
RG
TA = 25°C
1.0
W
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz, VDS = 40 V
2085
pF
Output Capacitance
COSS
300
Reverse Transfer Capacitance
CRSS
10
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
2.0
4.0
V
mV/°C
5.5
mW
CHARGES & CAPACITANCES
Total Gate Charge
QG(TOT)
VGS = 6 V, VDS = 40 V, ID = 30 A
10
nC
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 40 V, ID = 30 A
32
nC
Gate−to−Source Charge
QGS
10
Gate−to−Drain Charge
QGD
6
Plateau Voltage
VGP
5
V
18
ns
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
VGS = 10 V, VDS = 64 V,
ID = 30 A, RG = 2.5 W
50
td(OFF)
48
tf
39
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Reverse Recovery Charge
QRR
Charge Time
ta
Discharge Time
tb
VGS = 0 V,
IS = 20 A
TJ = 25°C
0.8
TJ = 125°C
0.7
1.2
V
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 20 A
49
ns
60
nC
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 20 A
30
ns
19
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures
4. RqJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 × 1.5 in. board of FR−4 material. RqJC is guaranteed
by design while RqCA is determined by the user’s board design.
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2
NVMFS6D1N08H
a) 53°C/W when mounted on
a 1 in2 pad of 2 oz copper.
b) 125°C/W when mounted on
a minimum pad of 2 oz copper.
5. Pulse Test: pulse width < 300 ms, duty cycle < 2%.
6. EAS of 465 mJ is based on started TJ = 25°C, IAS = 5.9 A, VDD = 80 V, VGS = 10 V. 100% test at IAS = 8.4 A.
7. As an N−ch device, the negative Vgs rating is for low duty cycle pulse occurrence only. No continuous rating is implied.
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3
NVMFS6D1N08H
5.5 V
90
6.0 V
5.0 V
4.5 V
0.5
1.0
1.5
2.0
2.5
3.0
4.0
3.5
VDS = 10 V
80
70
60
50
40
30
TJ = 25°C
20
10
4.0 V
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
100
VGS = 6.5 V to 10 V
ID, DRAIN CURRENT (A)
150
140
130
120
110
100
90
80
70
60
50
40
30
20
10
0
TJ = 125°C
0
4.5
0
1
2
TJ = −55°C
3
4
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
TYPICAL CHARACTERISTICS
6
0.010
20
18
TJ = 25°C
ID = 20 A
16
TJ = 25°C
0.008
14
0.006
12
10
8
VGS = 10 V
0.004
6
0.002
4
2
0
4
6
5
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
0
10
20
25
30
35
40
50
45
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10K
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
2.5
2.3
VGS = 10 V
ID = 20 A
2.1
1.9
1.7
1.5
1.3
1.1
0.9
0.7
0.5
0.3
0.1
−0.1
−50 −25
0
15
IDSS, LEAKAGE (nA)
TJ = 150°C
1K
TJ = 85°C
100
TJ = 25°C
10
1
25
50
75
100
125
150
175
5
15
25
35
45
55
65
75
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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4
NVMFS6D1N08H
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
10K
C, CAPACITANCE (pF)
CISS
1K
COSS
100
10
CRSS
VGS = 0 V
TJ = 25°C
f = 1 MHz
1
10
0
20
30
50
40
QGS
6
QGD
4
VDS = 40 V
TJ = 25°C
ID = 30 A
2
0
10
5
20
15
30
25
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
100
VGS = 0 V
td(off)
100
IS, SOURCE CURRENT (A)
t, TIME (ns)
8
0
VGS = 10 V
VDS = 64 V
ID = 30 A
tr
tf
td(on)
10
1
TJ = 125°C
0.1
10
1
10
0.4
100
0.5
0.6
TJ = 25°C TJ = −55°C
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
TC = 25°C
Single Pulse
VGS ≤ 10 V
TJ(initial) = 25°C
IPEAK (A)
ID, DRAIN CURRENT(A)
10
60
1000
100
12
10
10
TJ(initial) = 100°C
10 ms
1
RDS(on) Limit
Thermal Limit
Package Limit
0.1
0.1
1
10
0.5 ms
1 ms
10 ms
1
100
1000
1E−05
1E−04
1E−03
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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5
1E−02
NVMFS6D1N08H
TYPICAL CHARACTERISTICS
100
Duty Cycle = 0.5
R(t) (°C/W)
10
0.2
0.1
0.05
1 0.02
0.01
0.1
0.01
Single Pulse
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Marking
Package
Shipping†
NVMFS6D1N08HT1G
6D1N08
DFN5
(Pb−Free)
1500 / Tape & Reel
NVMFSW6D1N08HT1G
W6D1N8
DFN5
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE N
1
DATE 25 JUN 2018
SCALE 2:1
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
A1
4
TOP VIEW
C
DETAIL A
0.10 C
SEATING
PLANE
A
0.10 C
SIDE VIEW
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
GENERIC
MARKING DIAGRAM*
DETAIL A
1
0.10
b
C A B
0.05
c
8X
XXXXXX
AYWZZ
e/2
e
L
1
4
K
RECOMMENDED
SOLDERING FOOTPRINT*
E2
PIN 5
(EXPOSED PAD)
L1
M
2X
0.495
4.560
2X
1.530
G
D2
2X
BOTTOM VIEW
XXXXXX = Specific Device Code
A
= Assembly Location
Y
= Year
W
= Work Week
ZZ
= Lot Traceability
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
0.475
3.200
4.530
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
1.330
STYLE 2:
2X
PIN 1. ANODE
0.905
2. ANODE
3. ANODE
4. NO CONNECT
0.965
5. CATHODE
1
4X
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
DOCUMENT NUMBER:
DESCRIPTION:
98AON14036D
DFN5 5x6, 1.27P (SO−8FL)
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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