NVMFS6H800NWFT1G

DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel V(BR)DSS RDS(ON) MAX ID MAX 80 V 2.1 mW @ 10 V 203 A 80 V, 2.1 mW, 203 A NVMFS6H800N D (5,6) Features • • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H800NWF − Wettable Flank Option for Enhanced Optical Inspection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant G (4) S (1,2,3) N−CHANNEL MOSFET MARKING DIAGRAMS MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V ID 203 A Parameter Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C Pulsed Drain Current PD TC = 100°C TA = 25°C Power Dissipation RqJA (Notes 1, 2) 143 Steady State 100 ID TA = 100°C TA = 25°C W 200 A 28 PD W 3.8 1.9 IDM 900 A TJ, Tstg −55 to +175 °C IS 166 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 16.1 A) EAS 1271 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature Range Source Current (Body Diode) 1 DFNW5 CASE 507BA D S S S G D XXXXXX AYWZZ D D XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability 20 TA = 100°C TA = 25°C, tp = 10 ms DFN5 CASE 506EZ ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case − Steady State Junction−to−Ambient − Steady State (Note 2) Symbol Value Unit RqJC 0.75 °C/W RqJA 39 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2017 August, 2022 − Rev. 3 1 Publication Order Number: NVMFS6H800N/D NVMFS6H800N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 80 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 39 VGS = 0 V, VDS = 80 V mV/°C TJ = 25 °C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 330 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 2.0 4.0 8.0 VGS = 10 V gFS ID = 20 A VDS =15 V, ID = 50 A 1.7 V mV/°C 2.1 138 mW S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 5530 VGS = 0 V, f = 1 MHz, VDS = 40 V 760 pF 27 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 40 V; ID = 50 A Threshold Gate Charge QG(TH) 15 Gate−to−Source Charge QGS 26 Gate−to−Drain Charge QGD Plateau Voltage VGP 4.8 td(ON) 25 VGS = 10 V, VDS = 40 V; ID = 50 A 85 nC 16 V SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 10 V, VDS = 64 V, ID = 50 A, RG = 2.5 W tf 89 ns 97 85 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.8 TJ = 125°C 0.7 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 50 A 1.2 V 76 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 36 ns 40 82 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS6H800N TYPICAL CHARACTERISTICS 350 5.5 V to 10 V 5.0 V 250 200 150 4.5 V 100 50 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 0 250 200 150 1 2 3 5 4 6 7 50 0 8 TJ = 125°C 2 6 Figure 2. Transfer Characteristics 30 25 20 15 10 5 0 4 5 6 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 3.0 TJ = 25°C 2.8 2.6 2.4 2.2 2.0 VGS = 10 V 1.8 1.6 1.4 1.2 1.0 0 100 50 150 200 250 300 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1M 2.4 VGS = 10 V ID = 50 A TJ = 175°C TJ = 150°C 100K IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 5 Figure 1. On−Region Characteristics TJ = 25°C ID = 50 A 2.2 4 VGS, GATE−TO−SOURCE VOLTAGE (V) 35 2.0 3 TJ = −55°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 40 3 TJ = 25°C 100 VGS = 4.0 V 0 VDS = 10 V 300 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 300 ID, DRAIN CURRENT (A) 350 1.8 1.6 1.4 1.2 1.0 0.8 10K TJ = 125°C 1K TJ = 85°C 100 TJ = 25°C 10 0.6 0.4 −50 −25 1 0 25 50 75 100 125 150 175 5 15 25 35 45 55 65 75 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NVMFS6H800N TYPICAL CHARACTERISTICS CISS 1K COSS 100 10 VGS = 0 V TJ = 25°C f = 1 MHz 0 10 CRSS 20 30 40 50 60 70 10 VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 10K 9 8 7 6 QGD QGS 5 4 3 VDS = 40 V TJ = 25°C ID = 50 A 2 1 0 80 10 0 30 20 50 40 60 QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source vs. Total Charge 1K 80 70 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1K IS, SOURCE CURRENT (A) VGS = 0 V td(off) 100 tf VGS = 10 V VDS = 64 V ID = 50 A td(on) 10 1 10 ID, DRAIN CURRENT (A) 0.1 100 TJ = 125°C 1 TJ = −55°C TJ = 25°C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1K 1000 TC = 25°C VGS ≤ 10 V Single Pulse 100 TJ (initial) = 25°C 100 10 ms 10 1 0.1 10 IPEAK, (A) t, TIME (ns) 100 tr RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 10 0.5 ms 1 ms 10 ms 1 1K 100 TJ (initial) = 100°C 0.00001 0.0001 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 0.01 NVMFS6H800N TYPICAL CHARACTERISTICS 100 50% Duty Cycle RqJA(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 0.01 Single Pulse 0.001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 t, PULSE TIME (sec) Figure 13. Thermal Response DEVICE ORDERING INFORMATION Device Case Marking Package Shipping† NVMFS6H800NT1G 506EZ 6H800N DFN5 (Pb−Free) 1500 / Tape & Reel NVMFS6H800NWFT1G 507BA 800NWF DFNW5 (Pb−Free, Wettable Flanks) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NVMFS6H800N PACKAGE DIMENSIONS DFNW5 5x6 (FULL−CUT SO8FL WF) CASE 507BA ISSUE A q q www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 506EZ ISSUE A DATE 25 AUG 2021 1 SCALE 2:1 q q GENERIC MARKING DIAGRAM* 1 XXXXXX AYWZZ XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON24855H DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ADDITIONAL INFORMATION TECHNICAL PUBLICATIONS: Technical Library: www.onsemi.com/design/resources/technical−documentation onsemi Website: www.onsemi.com  ONLINE SUPPORT: www.onsemi.com/support For additional information, please contact your local Sales Representative at www.onsemi.com/support/sales