NVMFS6H864NLT1G

DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel V(BR)DSS RDS(ON) MAX ID MAX 29 mW @ 10 V 80 V 22 A 38 mW @ 4.5 V 80 V, 29 mW, 22 A NVMFS6H864NL D (5,6) Features • • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H864NLWF − Wettable Flank Option for Enhanced Optical Inspection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant G (4) S (1,2,3) N−CHANNEL MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V ID 22 A Parameter Continuous Drain Current RqJC (Notes 1, 3) Steady State Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) TC = 100°C TC = 25°C Power Dissipation RqJA (Notes 1, 2) TA = 25°C PD ID Operating Junction and Storage Temperature Range Source Current (Body Diode) A 7.0 5 PD TA = 100°C TA = 25°C, tp = 10 ms W 33 DFNW5 (FULL−CUT SO8FL WF) CASE 507BA MARKING DIAGRAM 17 TA = 100°C TA = 25°C DFN5 (SO−8FL) CASE 488AA STYLE 1 15 TC = 100°C Steady State Pulsed Drain Current TC = 25°C 1 W 3.5 D S S S G D XXXXXX AYWZZ D D 1.7 IDM 97 A TJ, Tstg −55 to +175 °C IS 28 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 1.0 A) EAS 68 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. XXXXXX = 6H864L XXXXXX = (NVMFS6H864NL) or XXXXXX = 864LWF XXXXXX = (NVMFS6H864NLWF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 4.6 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 43 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2019 April, 2022 − Rev. 1 1 Publication Order Number: NVMFS6H864NL/D NVMFS6H864NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage V(BR)DSS Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current 80 VGS = 0 V, ID = 250 mA V 47.8 VGS = 0 V, VDS = 80 V IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 20 mA mV/°C TJ = 25 °C 10 TJ = 125°C 100 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient 1.2 VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) gFS 2.0 −5.2 V mV/°C VGS = 10 V ID = 5 A 24 29 mW VGS = 4.5 V ID = 5 A 30 38 mW VDS = 8 V, ID = 5 A 24 S VGS = 0 V, f = 1 MHz, VDS = 40 V 431 pF CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS 55 Reverse Transfer Capacitance CRSS 4 nC Total Gate Charge QG(TOT) VGS = 10 V, VDS = 40 V; ID = 10 A 9 Threshold Gate Charge QG(TH) VGS = 4.5 V, VDS = 40 V; ID = 10 A 1 Gate−to−Source Charge QGS 1.7 Gate−to−Drain Charge QGD 1.4 VGP 3.2 V QG(TOT) 4 nC 8 ns Plateau Voltage Total Gate Charge SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr VGS = 4.5 V, VDS = 64 V, ID = 10 A, RG = 2.5 W 6 td(OFF) 12 tf 4 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD tRR ta VGS = 0 V, IS = 5 A TJ = 25°C 0.82 TJ = 125°C 0.69 VGS = 0 V, dIS/dt = 100 A/ms, IS = 10 A 25 1.2 V ns 17 tb 8 QRR 16 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS6H864NL TYPICAL CHARACTERISTICS 20 18 ID, DRAIN CURRENT (A) 3.2 V 16 ID, DRAIN CURRENT (A) 3.4 V 14 3.0 V 12 10 8 2.8 V 6 4 16 14 12 10 8 4 2 0 0 0 1 2 4 3 5 0 1.5 2.0 TJ = −55°C 2.5 3.0 48 43 38 33 28 23 6 5 4 7 8 10 9 VGS, GATE−TO−SOURCE VOLTAGE (V) 4.0 3.5 Figure 2. Transfer Characteristics 53 TJ = 25°C 34 32 VGS = 4.5 V 30 28 26 VGS = 10 V 24 22 20 1 2 5 4 3 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100 2.5 VGS = 10 V ID = 5 A 10 T = 175°C J 2.0 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 1.0 Figure 1. On−Region Characteristics TJ = 25°C ID = 5 A 1.5 1.0 TJ = 150°C 1 TJ = 125°C 0.1 TJ = 85°C 0.01 TJ = 25°C 0.001 0.5 −50 0.5 VGS, GATE−TO−SOURCE VOLTAGE (V) 58 3 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 63 18 13 TJ = 25°C 6 2 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 20 VGS = 10 V to 3.6 V 18 −25 0 25 50 75 100 125 150 175 0.0001 5 15 25 35 45 55 65 75 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NVMFS6H864NL 10K C, CAPACITANCE (pF) 1K CISS 100 COSS 10 1 VGS = 0 V TJ = 25°C f = 1 MHz 0 10 CRSS 20 30 40 50 60 70 80 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS (Continued) QGD 3 VDS = 40 V ID = 10 A TJ = 25°C 2 1 0 2 1 0 3 4 7 6 td(on) VGS = 4.5 V VDS = 64 V ID = 10 A 1 10 10 9 8 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge tf VGS = 0 V TJ = −55°C TJ = 125°C TJ = 25°C 1 0.3 50 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 TA = 25°C Single Pulse VGS ≤ 10 V TJ(initial) = 25°C IPEAK (A) 10 10 TJ(initial) = 100°C 1 1 0.1 5 IS, SOURCE CURRENT (A) t, TIME (ns) QGS 4 Figure 7. Capacitance Variation tr ID, DRAIN CURRENT (A) 6 5 QG, TOTAL GATE CHARGE (nC) td(off) 100 8 7 5 10 1000 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 1 10 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 10 ms 1 ms 0.5 ms 10 ms 100 1000 0.1 0.00001 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NVMFS6H864NL TYPICAL CHARACTERISTICS (Continued) 100 50% Duty Cycle R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 1 0.1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response DEVICE ORDERING INFORMATION Device Marking Package Shipping† NVMFS6H864NLT1G 6H864L DFN5 (Pb−Free) 1500 / Tape & Reel NVMFS6H864NLWFT1G 864LWF DFNW5 (Pb−Free, Wettable Flanks) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D 2 A B D1 2X 0.20 C 4X E1 2 1 2 3 q E c A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K PIN 5 (EXPOSED PAD) RECOMMENDED SOLDERING FOOTPRINT* E2 L1 M 2X 0.495 4.560 2X 1.530 G D2 BOTTOM VIEW 2X XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFNW5 5x6 (FULL−CUT SO8FL WF) CASE 507BA ISSUE A DATE 03 FEB 2021 q q GENERIC MARKING DIAGRAM* 1 XXXXXX AYWZZ XXXXXX A Y W ZZ = Specific Device Code *This information is generic. Please refer to = Assembly Location device data sheet for actual part marking. = Year Pb−Free indicator, “G” or microdot “ G”, = Work Week may or may not be present. Some products = Lot Traceability may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON26450H Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. DFNW5 5x6 (FULL−CUT SO8FL WF) PAGE 1 OF 1 onsemi and are trademarks of Semiconductor Components Industries, LLC dba onsemi or its subsidiaries in the United States and/or other countries. onsemi reserves the right to make changes without further notice to any products herein. onsemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. onsemi does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. ADDITIONAL INFORMATION TECHNICAL PUBLICATIONS: Technical Library: www.onsemi.com/design/resources/technical−documentation onsemi Website: www.onsemi.com  ONLINE SUPPORT: www.onsemi.com/support For additional information, please contact your local Sales Representative at www.onsemi.com/support/sales