NVMFS6H864NLWFT1G

MOSFET - Power, Single N-Channel 80 V, 29 mW, 22 A NVMFS6H864NL Features • • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H864NLWF − Wettable Flank Option for Enhanced Optical Inspection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 29 mW @ 10 V 80 V 22 A 38 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V ID 22 A Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current Steady State PD ID N−CHANNEL MOSFET A 7.0 PD W 3.5 1 1.7 IDM 97 A TJ, Tstg −55 to +175 °C IS 28 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 1.0 A) EAS 68 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature Range Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter MARKING DIAGRAM 5 TA = 100°C TA = 25°C, tp = 10 ms S (1,2,3) W 33 17 TA = 100°C TA = 25°C G (4) 15 TC = 100°C TA = 25°C D (5,6) Symbol Value Unit Junction−to−Case − Steady State RqJC 4.6 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 43 DFN5 (SO−8FL) CASE 488AA STYLE 1 D S S S G D XXXXXX AYWZZ D D XXXXXX = 6H864L XXXXXX = (NVMFS6H864NL) or XXXXXX = 864LWF XXXXXX = (NVMFS6H864NLWF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2019 March, 2020 − Rev. 0 1 Publication Order Number: NVMFS6H864NL/D NVMFS6H864NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 80 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 47.8 VGS = 0 V, VDS = 80 V mV/°C TJ = 25 °C 10 TJ = 125°C 100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 20 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 2.0 −5.2 V mV/°C VGS = 10 V ID = 5 A 24 29 mW VGS = 4.5 V ID = 5 A 30 38 mW gFS VDS = 8 V, ID = 5 A 24 S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 431 VGS = 0 V, f = 1 MHz, VDS = 40 V 55 Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) 1 Gate−to−Source Charge QGS 1.7 Gate−to−Drain Charge QGD Plateau Voltage Total Gate Charge pF 4 VGS = 10 V, VDS = 40 V; ID = 10 A VGS = 4.5 V, VDS = 40 V; ID = 10 A 9 nC 1.4 VGP 3.2 V QG(TOT) 4 nC td(ON) 8 SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 64 V, ID = 10 A, RG = 2.5 W tf 6 ns 12 4 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 5 A TJ = 25°C 0.82 TJ = 125°C 0.69 tRR ta tb 1.2 V 25 VGS = 0 V, dIS/dt = 100 A/ms, IS = 10 A QRR 17 ns 8 16 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS6H864NL TYPICAL CHARACTERISTICS 20 18 ID, DRAIN CURRENT (A) 3.2 V 16 ID, DRAIN CURRENT (A) 3.4 V 14 3.0 V 12 10 8 2.8 V 6 4 16 14 12 10 8 4 2 0 0 0 1 2 4 3 5 0 1.5 2.0 TJ = −55°C 2.5 48 43 38 33 28 23 6 5 4 7 8 10 9 VGS, GATE−TO−SOURCE VOLTAGE (V) 4.0 3.5 3.0 Figure 2. Transfer Characteristics 53 TJ = 25°C 34 32 VGS = 4.5 V 30 28 26 VGS = 10 V 24 22 20 1 2 5 4 3 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100 2.5 VGS = 10 V ID = 5 A 10 T = 175°C J 2.0 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 1.0 Figure 1. On−Region Characteristics TJ = 25°C ID = 5 A 1.5 1.0 TJ = 150°C 1 TJ = 125°C 0.1 TJ = 85°C 0.01 TJ = 25°C 0.001 0.5 −50 0.5 VGS, GATE−TO−SOURCE VOLTAGE (V) 58 3 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 63 18 13 TJ = 25°C 6 2 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 20 VGS = 10 V to 3.6 V 18 −25 0 25 50 75 100 125 150 175 0.0001 5 15 25 35 45 55 65 75 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NVMFS6H864NL 10K C, CAPACITANCE (pF) 1K CISS 100 COSS 10 1 VGS = 0 V TJ = 25°C f = 1 MHz 0 10 CRSS 20 30 40 50 60 70 80 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS QGD 3 VDS = 40 V ID = 10 A TJ = 25°C 2 1 0 1 0 2 3 4 7 6 9 8 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge td(on) tf VGS = 4.5 V VDS = 64 V ID = 10 A 1 10 10 VGS = 0 V TJ = −55°C TJ = 125°C TJ = 25°C 1 0.3 50 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 TA = 25°C Single Pulse VGS ≤ 10 V TJ(initial) = 25°C IPEAK (A) 10 10 TJ(initial) = 100°C 1 1 0.1 5 IS, SOURCE CURRENT (A) t, TIME (ns) QGS 4 Figure 7. Capacitance Variation tr ID, DRAIN CURRENT (A) 6 5 QG, TOTAL GATE CHARGE (nC) td(off) 100 8 7 5 10 1000 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 1 10 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 10 ms 1 ms 0.5 ms 10 ms 100 1000 0.1 0.00001 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NVMFS6H864NL TYPICAL CHARACTERISTICS 100 50% Duty Cycle R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 1 0.1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response DEVICE ORDERING INFORMATION Device Marking Package Shipping† NVMFS6H864NLT1G 6H864L DFN5 (Pb−Free) 1500 / Tape & Reel NVMFS6H864NLWFT1G 864LWF DFN5 (Pb−Free, Wettable Flanks) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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