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NVMFS6H864NLWFT1G

NVMFS6H864NLWFT1G

  • 厂商:

    ONSEMI(安森美)

  • 封装:

    TDFN8

  • 描述:

    MOSFET N-CH 80V 7A/22A 5DFN

  • 数据手册
  • 价格&库存
NVMFS6H864NLWFT1G 数据手册
MOSFET - Power, Single N-Channel 80 V, 29 mW, 22 A NVMFS6H864NL Features • • • • • • Small Footprint (5x6 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses NVMFS6H864NLWF − Wettable Flank Option for Enhanced Optical Inspection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(ON) MAX ID MAX 29 mW @ 10 V 80 V 22 A 38 mW @ 4.5 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 80 V Gate−to−Source Voltage VGS ±20 V ID 22 A Continuous Drain Current RqJC (Notes 1, 3) TC = 25°C Power Dissipation RqJC (Note 1) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State TC = 100°C TC = 25°C Power Dissipation RqJA (Notes 1, 2) Pulsed Drain Current Steady State PD ID N−CHANNEL MOSFET A 7.0 PD W 3.5 1 1.7 IDM 97 A TJ, Tstg −55 to +175 °C IS 28 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 1.0 A) EAS 68 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Operating Junction and Storage Temperature Range Source Current (Body Diode) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter MARKING DIAGRAM 5 TA = 100°C TA = 25°C, tp = 10 ms S (1,2,3) W 33 17 TA = 100°C TA = 25°C G (4) 15 TC = 100°C TA = 25°C D (5,6) Symbol Value Unit Junction−to−Case − Steady State RqJC 4.6 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 43 DFN5 (SO−8FL) CASE 488AA STYLE 1 D S S S G D XXXXXX AYWZZ D D XXXXXX = 6H864L XXXXXX = (NVMFS6H864NL) or XXXXXX = 864LWF XXXXXX = (NVMFS6H864NLWF) A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2019 March, 2020 − Rev. 0 1 Publication Order Number: NVMFS6H864NL/D NVMFS6H864NL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 80 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 47.8 VGS = 0 V, VDS = 80 V mV/°C TJ = 25 °C 10 TJ = 125°C 100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 20 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.2 2.0 −5.2 V mV/°C VGS = 10 V ID = 5 A 24 29 mW VGS = 4.5 V ID = 5 A 30 38 mW gFS VDS = 8 V, ID = 5 A 24 S CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 431 VGS = 0 V, f = 1 MHz, VDS = 40 V 55 Total Gate Charge QG(TOT) Threshold Gate Charge QG(TH) 1 Gate−to−Source Charge QGS 1.7 Gate−to−Drain Charge QGD Plateau Voltage Total Gate Charge pF 4 VGS = 10 V, VDS = 40 V; ID = 10 A VGS = 4.5 V, VDS = 40 V; ID = 10 A 9 nC 1.4 VGP 3.2 V QG(TOT) 4 nC td(ON) 8 SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time tr td(OFF) VGS = 4.5 V, VDS = 64 V, ID = 10 A, RG = 2.5 W tf 6 ns 12 4 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 5 A TJ = 25°C 0.82 TJ = 125°C 0.69 tRR ta tb 1.2 V 25 VGS = 0 V, dIS/dt = 100 A/ms, IS = 10 A QRR 17 ns 8 16 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFS6H864NL TYPICAL CHARACTERISTICS 20 18 ID, DRAIN CURRENT (A) 3.2 V 16 ID, DRAIN CURRENT (A) 3.4 V 14 3.0 V 12 10 8 2.8 V 6 4 16 14 12 10 8 4 2 0 0 0 1 2 4 3 5 0 1.5 2.0 TJ = −55°C 2.5 48 43 38 33 28 23 6 5 4 7 8 10 9 VGS, GATE−TO−SOURCE VOLTAGE (V) 4.0 3.5 3.0 Figure 2. Transfer Characteristics 53 TJ = 25°C 34 32 VGS = 4.5 V 30 28 26 VGS = 10 V 24 22 20 1 2 5 4 3 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100 2.5 VGS = 10 V ID = 5 A 10 T = 175°C J 2.0 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 1.0 Figure 1. On−Region Characteristics TJ = 25°C ID = 5 A 1.5 1.0 TJ = 150°C 1 TJ = 125°C 0.1 TJ = 85°C 0.01 TJ = 25°C 0.001 0.5 −50 0.5 VGS, GATE−TO−SOURCE VOLTAGE (V) 58 3 TJ = 125°C VDS, DRAIN−TO−SOURCE VOLTAGE (V) 63 18 13 TJ = 25°C 6 2 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 20 VGS = 10 V to 3.6 V 18 −25 0 25 50 75 100 125 150 175 0.0001 5 15 25 35 45 55 65 75 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NVMFS6H864NL 10K C, CAPACITANCE (pF) 1K CISS 100 COSS 10 1 VGS = 0 V TJ = 25°C f = 1 MHz 0 10 CRSS 20 30 40 50 60 70 80 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS QGD 3 VDS = 40 V ID = 10 A TJ = 25°C 2 1 0 1 0 2 3 4 7 6 9 8 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge td(on) tf VGS = 4.5 V VDS = 64 V ID = 10 A 1 10 10 VGS = 0 V TJ = −55°C TJ = 125°C TJ = 25°C 1 0.3 50 0.4 0.5 0.6 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 TA = 25°C Single Pulse VGS ≤ 10 V TJ(initial) = 25°C IPEAK (A) 10 10 TJ(initial) = 100°C 1 1 0.1 5 IS, SOURCE CURRENT (A) t, TIME (ns) QGS 4 Figure 7. Capacitance Variation tr ID, DRAIN CURRENT (A) 6 5 QG, TOTAL GATE CHARGE (nC) td(off) 100 8 7 5 10 1000 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 1 10 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 10 ms 1 ms 0.5 ms 10 ms 100 1000 0.1 0.00001 0.0001 0.001 0.01 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. Maximum Drain Current vs. Time in Avalanche www.onsemi.com 4 NVMFS6H864NL TYPICAL CHARACTERISTICS 100 50% Duty Cycle R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 1 0.1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Response DEVICE ORDERING INFORMATION Device Marking Package Shipping† NVMFS6H864NLT1G 6H864L DFN5 (Pb−Free) 1500 / Tape & Reel NVMFS6H864NLWFT1G 864LWF DFN5 (Pb−Free, Wettable Flanks) 1500 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN5 5x6, 1.27P (SO−8FL) CASE 488AA ISSUE N 1 DATE 25 JUN 2018 SCALE 2:1 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A 2 B D1 2X 0.20 C 4X E1 2 q E c 1 2 3 A1 4 TOP VIEW C DETAIL A 0.10 C SEATING PLANE A 0.10 C SIDE VIEW MILLIMETERS MIN NOM MAX 0.90 1.00 1.10 0.00 −−− 0.05 0.33 0.41 0.51 0.23 0.28 0.33 5.00 5.15 5.30 4.70 4.90 5.10 3.80 4.00 4.20 6.00 6.30 6.15 5.70 5.90 6.10 3.45 3.65 3.85 1.27 BSC 0.51 0.575 0.71 1.20 1.35 1.50 0.51 0.575 0.71 0.125 REF 3.00 3.40 3.80 0_ −−− 12 _ DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q GENERIC MARKING DIAGRAM* DETAIL A 1 0.10 b C A B 0.05 c 8X XXXXXX AYWZZ e/2 e L 1 4 K RECOMMENDED SOLDERING FOOTPRINT* E2 PIN 5 (EXPOSED PAD) L1 M 2X 0.495 4.560 2X 1.530 G D2 2X BOTTOM VIEW XXXXXX = Specific Device Code A = Assembly Location Y = Year W = Work Week ZZ = Lot Traceability *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 0.475 3.200 4.530 STYLE 1: PIN 1. SOURCE 2. SOURCE 3. SOURCE 4. GATE 5. DRAIN 1.330 STYLE 2: 2X PIN 1. ANODE 0.905 2. ANODE 3. ANODE 4. NO CONNECT 0.965 5. CATHODE 1 4X 1.000 4X 0.750 1.270 PITCH DIMENSIONS: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. DOCUMENT NUMBER: DESCRIPTION: 98AON14036D DFN5 5x6, 1.27P (SO−8FL) Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative
NVMFS6H864NLWFT1G 价格&库存

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NVMFS6H864NLWFT1G
  •  国内价格 香港价格
  • 1+12.485191+1.54879
  • 10+8.4547010+1.04880
  • 100+5.92786100+0.73535
  • 500+4.79982500+0.59542

库存:1480

NVMFS6H864NLWFT1G
  •  国内价格 香港价格
  • 1500+4.241221500+0.52612
  • 3000+4.078943000+0.50599

库存:1480