NVMFSC1D6N06CL

DATA SHEET www.onsemi.com MOSFET - Power, DUAL COOL) N-Channel DFN8 5x6 V(BR)DSS RDS(ON) MAX 1.5 mW @ 10 V 60 V 2.3 mW @ 4.5 V 60 V, 1.5 mW, 224 A ID MAX 224 A N−Channel MOSFET NVMFSC1D6N06CL Features • • • • Advanced Dual−sided Cooled Packaging Ulra Low RDS(on) MSL1 Robust Packaging Design AEC−Q101 Qualified Typical Applications • Orring FET/Load Switching • Synchronous Rectifier • DC−DC Conversion MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 60 V Gate−to−Source Voltage VGS ±20 V TC = 25°C ID 224 A TC = 100°C ID 158.6 A TC = 25°C PD 166 W TC = 100°C PD 83 W TA = 25°C ID 35 A TA = 100°C ID 24.8 A TA = 25°C PD 4.1 W Continuous Drain Current RqJC (Note 2) Steady State Power Dissipation RqJC (Note 2) Steady State Continuous Drain Current RqJA (Notes 1, 2) Steady State Power Dissipation RqJA (Notes 1, 2) Steady State TA = 100°C PD 2 W Pulsed Drain Current TA = 25°C, tp = 10 ms IDM 900 A TJ, Tstg −55 to +175 °C IS 164 A EAS 451 mJ Operating Junction and Storage Temperature Range Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 17 A) Lead Temperature Soldering Reflow for Soldering Purposes (1/8″ from case for 10 s) TL DFN8 (SO8FL) CASES 506EG MARKING DIAGRAM ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 4HAYWZ 4H A Y W Z = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code ORDERING INFORMATION 300 °C See detailed ordering, marking and shipping information on page 5 of this data sheet. Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State (Note 2) RqJC 0.9 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 37 1. Surface−mounted on FR4 board using a 1 in2 pad size, 1 oz Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. © Semiconductor Components Industries, LLC, 2019 March, 2023 − Rev. 7 1 Publication Order Number: NVMFSC1D6N06CL/D NVMFSC1D6N06CL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 60 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 mA, ref to 25°C Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS VGS = 0 V, VDS = 60 V V 12.7 mV/°C TJ = 25°C 10 TJ = 125°C 100 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA VGS(TH)/TJ ID = 250 mA, ref to 25°C 100 mA nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance Gate−Resistance RDS(on) 1.2 2.0 −5.8 V mV/°C VGS = 10 V ID = 50 A 1.25 1.5 VGS = 4.5 V ID = 50 A 1.65 2.3 mW RG TA = 25°C 2 W Input Capacitance CISS VGS = 0 V, f = 1 MHz, VDS = 25 V 6660 pF Output Capacitance COSS 3000 Reverse Transfer Capacitance CRSS 45 CHARGES & CAPACITANCES Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 30 V, ID = 50 A 41 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 30 V, ID = 50 A 91 nC Gate−to−Source Charge QGS 17 Gate−to−Drain Charge QGD 9 Plateau Voltage VGP 2.9 V 14.5 ns SWITCHING CHARACTERISTICS (Note 3) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr VGS = 10 V, VDS = 48 V, ID = 50 A, RG = 1 W 55.6 td(OFF) 47.5 tf 14.1 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 50 A TJ = 25°C 0.78 TJ = 125°C 0.66 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A 1.2 V 76 ns 130 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMFSC1D6N06CL TYPICAL CHARACTERISTICS 200 200 VGS = 10 V to 3.4 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 160 3.2 V 140 120 3.0 V 100 2.8 V 80 60 40 20 0 0 0.5 1.0 1.5 VDS ≤ 10 V 180 2.0 2.5 160 140 120 100 80 3.0 TJ = 25°C 60 40 20 0 TJ = 125°C TJ = −55°C 0 1.0 1.5 2.0 2.5 3.0 3.5 VGS, GATE−TO−SOURCE VOLTAGE (V) Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 2.1 2.0 1.9 TJ = 25°C ID = 50 A 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10 VGS, GATE VOLTAGE (V) 2.0 1.9 1.8 1.7 1.6 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 2.2 4.0 TJ = 25°C VGS = 4.5 V VGS = 10 V 10 30 50 70 90 110 130 150 170 190 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1,000,000 2.0 VGS = 10 V ID = 40 A 1.8 100,000 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 0.5 VDS, DRAIN−TO−SOURCE VOLTAGE (V) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 180 1.6 1.4 1.2 1.0 TJ = 150°C TJ = 125°C 10,000 TJ = 85°C 1000 100 0.8 0.6 −50 −25 0 25 50 75 100 125 150 175 10 5 15 25 35 45 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 55 NVMFSC1D6N06CL C, CAPACITANCE (pF) CISS 1000 COSS 100 10 1 CRSS VGS = 0 V TJ = 25°C f = 1 MHz 0 10 20 30 40 50 60 10 30 QT 25 8 20 6 15 4 QGD QGS 2 0 0 10 VDS = 48 V TJ = 25°C ID = 50 A 10 20 30 40 50 60 5 80 70 90 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge VDS, DRAIN−TO−SOURCE VOLTAGE (V) 10,000 VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS VGS = 4.5 V VDD = 30 V ID = 50 A td(off) tf 100 t, TIME (ns) IS, SOURCE CURRENT (A) 1000 tr td(on) 10 1 1 10 1 100 TJ = 125°C 0.3 0.4 0.6 0.7 0.8 0.9 1.0 Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 TJ(initial) = 25°C TC = 25°C Single Pulse VGS ≤ 10 V 1 RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 IPEAK (A) 10 ms 0.1 0.5 TJ = −55°C VSD, SOURCE−TO−DRAIN VOLTAGE (V) 100 10 TJ = 25°C RG, GATE RESISTANCE (W) 1000 ID, DRAIN CURRENT (A) 10 0.5 ms 1 ms 10 ms 100 1000 TJ(initial) = 100°C 10 1 1E−04 1E−03 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 1E−02 NVMFSC1D6N06CL TYPICAL CHARACTERISTICS 100 50% Duty Cycle 20% 10% 5% 2% 1 R(t) (°C/W) 10 0.1 1% 0.01 0.001 0.0001 Single Pulse 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics ORDERING INFORMATION Device NVMFSC1D6N06CL Device Marking Package Shipping† 4H DFN8 5x6 (Pb−Free/Halogen Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. DUAL COOL is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States and/or other countries. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DFN8 5x6.15, 1.27P, DUAL COOL CASE 506EG ISSUE D DATE 25 AUG 2020 GENERIC MARKING DIAGRAM* AYWWZZ XXXXXX ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ DOCUMENT NUMBER: DESCRIPTION: XXXX A Y WW ZZ = Specific Device Code = Assembly Location = Year = Work Week = Assembly Lot Code 98AON84257G *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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