DATA SHEET
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MOSFET - Power,
DUAL COOL) N-Channel
DFN8 5x6
V(BR)DSS
RDS(ON) MAX
1.5 mW @ 10 V
60 V
2.3 mW @ 4.5 V
60 V, 1.5 mW, 224 A
ID MAX
224 A
N−Channel MOSFET
NVMFSC1D6N06CL
Features
•
•
•
•
Advanced Dual−sided Cooled Packaging
Ulra Low RDS(on)
MSL1 Robust Packaging Design
AEC−Q101 Qualified
Typical Applications
• Orring FET/Load Switching
• Synchronous Rectifier
• DC−DC Conversion
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
TC = 25°C
ID
224
A
TC = 100°C
ID
158.6
A
TC = 25°C
PD
166
W
TC = 100°C
PD
83
W
TA = 25°C
ID
35
A
TA = 100°C
ID
24.8
A
TA = 25°C
PD
4.1
W
Continuous Drain
Current RqJC (Note 2)
Steady
State
Power Dissipation
RqJC (Note 2)
Steady
State
Continuous Drain
Current RqJA
(Notes 1, 2)
Steady
State
Power Dissipation
RqJA (Notes 1, 2)
Steady
State
TA = 100°C
PD
2
W
Pulsed Drain Current
TA = 25°C, tp = 10 ms
IDM
900
A
TJ, Tstg
−55 to
+175
°C
IS
164
A
EAS
451
mJ
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 17 A)
Lead Temperature Soldering Reflow for Soldering Purposes (1/8″ from case for 10 s)
TL
DFN8 (SO8FL)
CASES 506EG
MARKING DIAGRAM
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
4HAYWZ
4H
A
Y
W
Z
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
ORDERING INFORMATION
300
°C
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State (Note 2)
RqJC
0.9
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
37
1. Surface−mounted on FR4 board using a 1 in2 pad size, 1 oz Cu pad.
2. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
© Semiconductor Components Industries, LLC, 2019
March, 2023 − Rev. 7
1
Publication Order Number:
NVMFSC1D6N06CL/D
NVMFSC1D6N06CL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
ID = 250 mA, ref to 25°C
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
IDSS
VGS = 0 V,
VDS = 60 V
V
12.7
mV/°C
TJ = 25°C
10
TJ = 125°C
100
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
VGS(TH)/TJ
ID = 250 mA, ref to 25°C
100
mA
nA
ON CHARACTERISTICS (Note 3)
Gate Threshold Voltage
Negative Threshold Temperature Coefficient
Drain−to−Source On Resistance
Gate−Resistance
RDS(on)
1.2
2.0
−5.8
V
mV/°C
VGS = 10 V
ID = 50 A
1.25
1.5
VGS = 4.5 V
ID = 50 A
1.65
2.3
mW
RG
TA = 25°C
2
W
Input Capacitance
CISS
VGS = 0 V, f = 1 MHz, VDS = 25 V
6660
pF
Output Capacitance
COSS
3000
Reverse Transfer Capacitance
CRSS
45
CHARGES & CAPACITANCES
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 30 V, ID = 50 A
41
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 30 V, ID = 50 A
91
nC
Gate−to−Source Charge
QGS
17
Gate−to−Drain Charge
QGD
9
Plateau Voltage
VGP
2.9
V
14.5
ns
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
VGS = 10 V, VDS = 48 V,
ID = 50 A, RG = 1 W
55.6
td(OFF)
47.5
tf
14.1
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Reverse Recovery Charge
QRR
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.78
TJ = 125°C
0.66
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
1.2
V
76
ns
130
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Switching characteristics are independent of operating junction temperatures.
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NVMFSC1D6N06CL
TYPICAL CHARACTERISTICS
200
200
VGS = 10 V to 3.4 V
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
160
3.2 V
140
120
3.0 V
100
2.8 V
80
60
40
20
0
0
0.5
1.0
1.5
VDS ≤ 10 V
180
2.0
2.5
160
140
120
100
80
3.0
TJ = 25°C
60
40
20
0
TJ = 125°C
TJ = −55°C
0
1.0
1.5
2.0
2.5
3.0
3.5
VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
2.1
2.0
1.9
TJ = 25°C
ID = 50 A
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10
VGS, GATE VOLTAGE (V)
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
2.2
4.0
TJ = 25°C
VGS = 4.5 V
VGS = 10 V
10
30
50
70
90
110 130
150 170 190
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
1,000,000
2.0
VGS = 10 V
ID = 40 A
1.8
100,000
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
0.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
180
1.6
1.4
1.2
1.0
TJ = 150°C
TJ = 125°C
10,000
TJ = 85°C
1000
100
0.8
0.6
−50 −25
0
25
50
75
100
125
150
175
10
5
15
25
35
45
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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55
NVMFSC1D6N06CL
C, CAPACITANCE (pF)
CISS
1000
COSS
100
10
1
CRSS
VGS = 0 V
TJ = 25°C
f = 1 MHz
0
10
20
30
40
50
60
10
30
QT
25
8
20
6
15
4
QGD
QGS
2
0
0
10
VDS = 48 V
TJ = 25°C
ID = 50 A
10
20
30
40
50
60
5
80
70
90
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
10,000
VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS
VGS = 4.5 V
VDD = 30 V
ID = 50 A
td(off)
tf
100
t, TIME (ns)
IS, SOURCE CURRENT (A)
1000
tr
td(on)
10
1
1
10
1
100
TJ = 125°C
0.3
0.4
0.6
0.7
0.8
0.9
1.0
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
TJ(initial) = 25°C
TC = 25°C
Single Pulse
VGS ≤ 10 V
1
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
IPEAK (A)
10 ms
0.1
0.5
TJ = −55°C
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100
10
TJ = 25°C
RG, GATE RESISTANCE (W)
1000
ID, DRAIN CURRENT (A)
10
0.5 ms
1 ms
10 ms
100
1000
TJ(initial) = 100°C
10
1
1E−04
1E−03
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
1E−02
NVMFSC1D6N06CL
TYPICAL CHARACTERISTICS
100
50% Duty Cycle
20%
10%
5%
2%
1
R(t) (°C/W)
10
0.1
1%
0.01
0.001
0.0001
Single Pulse
0.0000001
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
ORDERING INFORMATION
Device
NVMFSC1D6N06CL
Device Marking
Package
Shipping†
4H
DFN8 5x6
(Pb−Free/Halogen Free)
3000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
DUAL COOL is a registered trademark of Semiconductor Components Industries, LLC (SCILLC) or its subsidiaries in the United States
and/or other countries.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
DFN8 5x6.15, 1.27P, DUAL COOL
CASE 506EG
ISSUE D
DATE 25 AUG 2020
GENERIC
MARKING DIAGRAM*
AYWWZZ
XXXXXX
ÉÉÉ
ÉÉÉ
ÉÉÉ
ÉÉÉ
DOCUMENT NUMBER:
DESCRIPTION:
XXXX
A
Y
WW
ZZ
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Assembly Lot Code
98AON84257G
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DFN8 5x6.15, 1.27P, DUAL COOL
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