NVMTS0D6N04CLTXG

NTAT6H406N MOSFET – N-Channel 80 V, 2.9 mΩ, 175 A Features • • • • • Low On−Resistance High Current Capability 100% Avalanche Tested ATPAK Package is Pin−compatible with DPAK (TO−252) Pb−Free, Halogen Free and RoHS Compliance www.onsemi.com Typical Applications VDSS RDS (on) Max ID Max 80 V 2.9 mΩ @ 10V 175 A ELECTRICAL CONNECTION N−Channel • Multi Lib Protection • Motor Control 2.4 Specifications Table 1. ABSOLUTE MAXIMUM RATING at TA = 25°C Parameter Symbol Value Unit Drain to Source Voltage VDSS 80 V Gate to Source Voltage VGSS ±20 V Drain Current (DC) ID 175 A Drain Current (Pulse) PW ≤ 10 ms, Duty Cycle ≤ 1% IDP 600 A Power Dissipation TC = 25°C PD 90 W TJ, TSTG −55 to +150 _C EAS 151 mJ TL 260 _C Operating Junction and Storage Temperature Single Pulse Drain to Source Avalanche Energy (L = 0.1 mH, IL(pk) = 55 A) Lead Temperature for Soldering Purposes, 3 mm from Case for 10 seconds Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1 3 1: Gate 2: Drain 3: Source 4: Drain DPAK / ATPAK CASE 369AM MARKING DIAGRAM ATP406 LOT No. Table 2. THERMAL RESISTANCE RATINGS Parameter Symbol Value Unit Junction to Case Steady State (TC = 25_C) RθJC 1.38 _C/W Junction to Ambient (Note 1) RθJA 77.2 _C/W 1. Surface mounted on FR4 board using a 130 mm2, © Semiconductor Components Industries, LLC, 2016 May, 2019 − Rev. 0 ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. 1 oz. Cu pad. 1 Publication Order Number: NTAT6H406N/D NTAT6H406N Table 3. ELECTRICAL CHARACTERISTICS at TA = 25°C Value Parameter Symbol Conditions min typ max Drain to Source Breakdown Voltage V(BR)DSS ID = 1 mA, VGS = 0 V 80 Zero−Gate Voltage Drain Current IDSS VDS = 80 V, VGS = 0 V 10 μA Gate to Source Leakage Current IGSS VGS = ±20 V, VDS = 0 V ±100 nA Gate Threshold Voltage VGS(th) VDS = 10 V, ID = 1 mA 4.0 V 2.9 mΩ Unit V 2.0 Forward Transconductance gFS VDS = 10 V, ID = 50 A 185 Static Drain to Source On−State Resistance RDS(on) ID = 50 A, VGS = 10 V 2.2 VDS = 40 V, f = 1 MHz S Input Capacitance CISS 8040 pF Output Capacitance COSS 1120 pF Reverse Transfer Capacitance CRSS 40 pF Turn−ON Delay Time td(on) 77 ns Rise Time tr 420 ns Turn−OFF Delay Time td(off) 310 ns VGS = 10 V, VDS = 48 V, ID = 50 A, RG = 50 Ω, Fall Time tf Total Gate Charge QG Gate to Source Charge QGS Gate to Drain “Miller” Charge QGD Forward Diode Voltage VSD IS = 100 A, VGS = 0 V 0.9 Reverse Recovery Time tRR 90 ns Reverse Recovery Charge QRR IS = 50 A, VGS = 0 V, dI/dt = 100 A/μs 126 nC VDS = 48 V, VGS = 10 V, ID = 50 A 155 ns 110 nC 32.4 nC 31.8 nC 1.5 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. www.onsemi.com 2 NTAT6H406N TYPICAL CHARACTERISTICS 250 350 TC = 25°C Single Pulse Drain Current, ID−A Drain Current, ID−A 300 6V 200 10 V 150 5.5 V 100 50 250 200 0 0.2 0.4 0.6 0.8 1 1.2 TC = 125°C 150 TC = 25°C 100 TC = −55°C 50 VGS = 5 V 0 VDS = 10 V 8V 0 1.4 0 2 Drain to Source Voltage, VDS − V Figure 1. On−Region Characteristics 8 5,0 9 Static Drain to Source On−State Resistance, RDS(on) − mΩ Static Drain to Source On−State Resistance, RDS(on) − mΩ 6 Figure 2. Transfer Characteristics 10 Single Pulse ID = 50 A TC = 25°C 8 7 6 5 4 3 2 1 4,5 Single Pulse ID = 50 A VGS = 10 V 4,0 3,5 3,0 2,5 2,0 1,5 1,0 0,5 0,0 0 4 5 6 7 8 9 10 11 −50 12 Gate to Source Voltage, VGS − V −25 0 25 50 75 100 125 150 Case Temperature, TC − °C Figure 3. On−Resistance vs. Gate to Source Voltage Figure 4. On−Resistance vs. Case Temperature 10000 1 000 VGS = 0 V Single Pulse Switching Time, SW Time − ns Forward Drain Current, IS − A 4 Gate to Source Voltage, VGS − V 100 TC = 125°C TC = −55°C 10 TC = 25°C 1 0.0 VDS = 48 V VGS = 10 V 1000 td(off) 100 td(on) 10 0.2 0.4 0.6 0.8 1.0 1.2 tr tf 1.4 Forward Diode Voltage VSD −V 0,1 1 10 Drain Current, ID − A Figure 5. Diode Forward Voltage vs. Current Figure 6. Switching Time vs. Drain Current www.onsemi.com 3 100 NTAT6H406N TYPICAL CHARACTERISTICS (continued) 10 100000 CISS 10000 COSS 1000 Crss CRSS 100 10 0 5 10 15 20 25 30 35 VDS = 48 V ID = 50 A 9 Gate to Source Voltage, VGS − V CISS, COSS, CRSS − pF f=1MHz f = 1 MHz 8 7 6 5 4 3 2 1 0 40 0 20 Drain to Source Voltage, VDS − V Figure 7. Capacitance Variation 1000 40 60 80 100 120 Total Gate Charge, QG − nC Figure 8. Gate to Source Voltage vs. Total Charge IDP = 600 A (PW ≤ 10 μs) 100 100 μs Drain Current,ID − A 100 10 Power Dissipation, PD − W 90 ID =175 A 10 ms Operation in this area is limited by RDS(on). 1 ms DC operation 1 TC = 25°C Single pulse 0,1 0.1 80 70 60 50 40 30 20 10 1 10 0 100 0 25 50 75 100 125 150 175 Case Temperature, TC − °C Drain to Source Voltage,VDS − V Figure 9. Safe Operating Area Figure 10. Power Dissipation vs. Case Temperature Thermal Resistance [°C/W] 10 RθJC = 1.38°C/W Duty Cycle = 0.5 1 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 1E−05 0.0001 0.001 0.01 PULSE TIME [sec] Figure 11. Thermal Response www.onsemi.com 4 0.1 1 10 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS DPAK (Single Gauge) / ATPAK CASE 369AM ISSUE O DATE 29 FEB 2012 ４ ２ ３ １ DOCUMENT NUMBER: DESCRIPTION: 98AON67243E Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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