NVMTS0D6N04CTXG

DATA SHEET www.onsemi.com MOSFET – Power, Single N-Channel 40 V, 0.48 mW, 533 A V(BR)DSS RDS(ON) MAX ID MAX 40 V 0.48 mW @ 10 V 533 A NVMTS0D6N04C D (5−8) Features • • • • • • Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses Wettable Flank Plated for Enhanced Optical Inspection AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant G (1) S (2−4) N−CHANNEL MOSFET MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 533 A Parameter Continuous Drain Current RqJC (Note 2) Steady State Power Dissipation RqJC (Note 2) Steady State Continuous Drain Current RqJA (Notes 1, 2) Steady State Power Dissipation RqJA (Notes 1, 2) Steady State Pulsed Drain Current TA = 25°C, tp = 10 ms TC = 25°C TC = 100°C TC = 25°C 377 PD TC = 100°C TA = 25°C W 245 122.7 ID TA = 100°C TA = 25°C A 76 PD 0D6N04C AWLYWW W 5.0 2.5 IDM 900 A TJ, Tstg −55 to +175 °C IS 204.5 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 53 A) EAS 2035 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Source Current (Body Diode) MARKING DIAGRAM 54 TA = 100°C Operating Junction and Storage Temperature TDFNW8 CASE 507AP Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. A WL Y WW = Assembly Location = 2−digit Wafer Lot Code = Year Code = Work Week Code ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Case − Steady State (Note 2) Junction−to−Ambient − Steady State (Note 2) Symbol Value Unit RqJC 0.61 °C/W RqJA 30.2 in2 1. Surface−mounted on FR4 board using a 1 pad size, 1 oz. Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. © Semiconductor Components Industries, LLC, 2018 August, 2021 − Rev. 3 1 Publication Order Number: NVMTS0D6N04C/D NVMTS0D6N04C ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 40 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ ID = 250 mA, ref to 25°C Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V, VDS = 40 V V 13.19 mV/°C TJ = 25°C 10 TJ = 125°C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 250 mA VGS(TH)/TJ ID = 250 mA, ref to 25°C 100 mA nA ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On Resistance RDS(on) VGS = 10 V ID = 50 A 2.0 4.0 −8.28 0.39 V mV/°C 0.48 mW Forward Transconductance gFS VDS =5 V, ID = 50 A 233 S Gate Resistance RG TA = 25°C 1.0 W CHARGES, CAPACITANCES & GATE RESISTANCE Input Capacitance CISS Output Capacitance COSS 11800 Reverse Transfer Capacitance CRSS 199 Total Gate Charge QG(TOT) 187 Threshold Gate Charge QG(TH) Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = 0 V, f = 1 MHz, VDS = 20 V VGS = 10 V, VDS = 20 V; ID = 50 A 7030 pF 29.7 nC 46.6 38.2 SWITCHING CHARACTERISTICS, VGS = 10 V (Note 4) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 33.6 VGS = 10 V, VDS = 20 V, ID = 50 A, RG = 2.5 W tf 27.9 ns 86.0 32.3 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.76 TJ = 125°C 0.6 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 50 A 1.2 V 105 VGS = 0 V, dIS/dt = 100 A/ms, IS = 50 A QRR 60 ns 45 274 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 4. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVMTS0D6N04C TYPICAL CHARACTERISTICS 400 280 4.5 V 240 200 160 120 80 4.0 V 40 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 320 2 1 4 3 400 300 TJ = 25°C 200 5 TJ = 125°C 2 2.0 1.5 1.0 0.5 7 6 5 7 8 9 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 1.0 TJ = 25°C 0.9 0.8 0.7 0.6 0.5 VGS = 10 V 0.4 0.3 0.2 0.1 0 5 15 1E+06 IDSS, LEAKAGE CURRENT (nA) 0.8 85 75 95 TJ = 125°C TJ = 85°C 1E+03 1.0 65 TJ = 150°C 1E+04 1.2 55 TJ = 175°C 1E+05 1.4 45 Figure 4. On−Resistance vs. Drain Current and Gate Voltage 2.0 VGS = 10 V ID = 50 A 35 25 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 6 Figure 2. Transfer Characteristics 2.5 1E+02 0.6 0.4 TJ = 25°C 1E+01 0.2 0 −55 5 Figure 1. On−Region Characteristics 3.0 1.6 TJ = −55°C 4 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 50 A 1.8 3 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 3.5 4 500 0 4.0 0 600 100 3.6 V 0 VDS = 10 V 700 4.8 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 800 VGS = 6 V to 10 V 360 −25 0 25 50 75 100 125 150 175 1E+00 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NVMTS0D6N04C TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 100K C, CAPACITANCE (pF) COSS 10K CISS VGS = 0 V TJ = 25°C f = 1 MHz 1K CRSS 100 0 10 30 20 8 7 6 QGS 5 QGD 4 3 VDS = 20 V TJ = 25°C ID = 50 A 2 1 0 40 20 0 60 40 100 80 120 VDS, DRAIN−TO−SOURCE VOLTAGE (V) QG, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge 1E−06 VGS = 0 V IS, SOURCE CURRENT (A) t, SWITCHING TIME (s) VGS = 10 V VDS = 20 V ID = 50 A td(off) tf 1E−07 td(on) tr 1E−08 TJ = 175°C TJ = 150°C 1 TJ = 25°C 3 1 5 7 9 0.1 0 0.2 0.3 0.4 0.5 0.7 0.8 0.9 1 VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 10 ms TC = 25°C Single Pulse VGS ≤ 10 V 1 IPEAK (A) 100 0.1 0.6 RG, GATE RESISTANCE (W) 100 10 TJ = −55°C TJ = 125°C 0.1 1000 ID, DRAIN CURRENT(A) 10 0.5 ms 1 ms TJ(initial) = 25°C TJ(initial) = 100°C 10 10 ms RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 100 1000 1 0.0001 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Maximum Rated Forward Biased Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 0.01 NVMTS0D6N04C TYPICAL CHARACTERISTICS 100 Duty Cycle = 0.5 R(t) (°C/W) 10 0.2 0.1 0.05 1 0.02 0.01 0.1 0.01 0.001 Single Pulse 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device NVMTS0D6N04CTXG Marking Package Shipping† 0D6N04C DFNW8 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TDFNW8 8.3x8.4, 2.0P, SINGLE COOL CASE 507AP ISSUE D DATE 29 MAR 2021 GENERIC MARKING DIAGRAM* XXXX A WL Y WW = Specific Device Code = Assembly Location = Wafer Lot Code = Year Code = Work Week Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON80534G Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. TDFNW8 8.3x8.4, 2.0P, SINGLE COOL PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. 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