NVMTS4D3N15MC

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Other names and brands may be claimed as the property of others. MOSFET – Power, Single N-Channel, DFNW8 150 V, 4.45 mW, 165 A NVMTS4D3N15MC Features • • • • • Small Footprint (8x8 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low QG and Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant Parameter Value Unit VDSS Drain−to−Source Voltage 150 V VGS Gate−to−Source Voltage ±20 V 165 A ID Continuous Drain Current RqJC (Note 2) PD Power Dissipation RqJC (Note 2) ID Continuous Drain Current RqJC (Note 2) PD Power Dissipation RqJC (Note 2) ID Continuous Drain Current RqJA (Notes 1, 2) PD Power Dissipation RqJA (Notes 1, 2) ID Continuous Drain Current RqJA (Notes 1, 2) PD Power Dissipation RqJA (Notes 1, 2) IDM Pulsed Drain Current TJ, Tstg IS EAS TL Steady State Steady State Steady State TC = 25°C TC = 100°C TA = 25°C 292 W 117 A 146 W 21 A 15 A 2.4 W 900 A −55 to +175 °C Source Current (Body Diode) 243 A Single Pulse Drain−to−Source Avalanche Energy (IL = 14.1 A) 3390 mJ Lead Temperature Soldering Reflow for Soldering Purposes (1/8″ from case for 10 s) 260 °C TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 in2 pad size, 1 oz Cu pad. 2. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted © Semiconductor Components Industries, LLC, 2020 December, 2020 − Rev. 0 ID MAX 150 V 4.45 mW @ 10 V 165 A G (1) N−CHANNEL MOSFET Top W TA = 100°C RDS(ON) MAX S (2, 3, 4) 5 Steady State V(BR)DSS D (5, 6, 7, 8) MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Symbol www.onsemi.com 1 Bottom DFNW8 CASE 507AP MARKING DIAGRAM 4D3N15MC AWLYWW 4D3N15MC A WL Y WW = Specific Device Code = Assembly Location = Wafer Lot Code = Year Code = Work Week Code ORDERING INFORMATION Device Package Shipping† NVMTS4D3N15MC DFNW8 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. Publication Order Number: NVMTS4D3N15MC/D NVMTS4D3N15MC THERMAL RESISTANCE RATINGS Symbol Parameter Max Unit °C/W RqJC Junction−to−Case – Steady State (Note 2) 0.5 RqJA Junction−to−Ambient – Steady State (Note 2) 31.4 ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min Typ Max Unit OFF CHARACTERISTICS V(BR)DSS Drain−to−Source Breakdown Voltage VGS = 0 V, ID = 250 mA 150 − − V V(BR)DSS / TJ Drain−to−Source Breakdown Voltage Temperature Coefficient ID = 250 mA, ref to 25°C − 49.84 − mV/°C Zero Gate Voltage Drain Current VGS = 0 V, VDS = 120 V TJ = 25°C − − 1 mA TJ = 125°C − − 10 mA VDS = 0 V, VGS = ±20 V − − ±100 nA Gate Threshold Voltage VGS = VDS, ID = 521 mA 2.5 3.6 4.5 V IDSS IGSS Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) VGS(TH) VGS(TH) / TJ Negative Threshold Temperature Coefficient ID = 250 mA, ref to 25°C − −9.93 − mV/°C Drain−to−Source On Resistance VGS = 10 V, ID = 95 A − 3.4 4.45 mW gFS Forward Transconductance VDS = 5 V, ID = 95 A − 177 − S RG Gate−Resistance TA = 25°C − 1.1 − W VGS = 0 V, f = 1 MHz, VDS = 75V − 6514 − pF − 1750 − − 12.5 − − 79 − − 21 − − 36 − RDS(on) CHARGES & CAPACITANCES CISS Input Capacitance COSS Output Capacitance CRSS Reverse Transfer Capacitance VGS = 10 V, VDS = 75 V, ID = 95 A VGS = 10 V, VDS = 75 V, ID = 95 A QG(TOT) Total Gate Charge QG(TH) Threshold Gate Charge QGS Gate−to−Source Charge QGD Gate−to−Drain Charge − 11 − VGP Plateau Voltage − 5.8 − − 38 − − 11 − Turn−Off Delay Time − 48 − Fall Time − 8 − TJ = 25°C − 0.86 1.2 TJ = 125°C − 0.80 − VGS = 0 V, dIS/dt = 100 A/ms, IS = 95 A − 85 − − 58 − nC SWITCHING CHARACTERISTICS, VGS = 10 V (Note 3) td(ON) tr td(OFF) tf Turn−On Delay Time Rise Time VGS = 10 V, VDS=75 V, ID = 95 A, RG = 6 W ns DRAIN−SOURCE DIODE CHARACTERISTICS VSD tRR Forward Diode Voltage Reverse Recovery Time VGS = 0 V, IS = 95 A ta Charge Time tb Discharge Time − 38 − Reverse Recovery Charge − 194 − QRR V ns nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Switching characteristics are independent of operating junction temperatures www.onsemi.com 2 NVMTS4D3N15MC TYPICAL CHARACTERISTICS 176 ID, DRAIN CURRENT (A) 128 112 96 80 64 5.5 V 48 32 5.0 V 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 128 112 96 80 64 TJ = 25°C 48 32 TJ = 175°C 3 4 TJ = −55°C 5 6 7 9 8 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 18 16 14 12 10 8 6 4 2 5.5 6.0 6.5 7.0 7.5 8.0 8.5 9.0 9.5 10 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C 5 4 VGS = 10 V 3 2 1 0 60 90 120 150 180 210 ID, DRAIN CURRENT (A) 1M IDSS, LEAKAGE (nA) 2.0 1.5 1.0 0 30 Figure 4. On−Resistance vs. Drain Current and Gate Voltage VGS = 10 V ID = 95 A 0.5 −50 −25 10 6 Figure 3. On−Resistance vs. Gate−to−Source Voltage RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 2 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 95 A 2.5 1 0 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 20 0 VDS = 5 V 144 16 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 160 6.0 V 144 16 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) 176 VGS = 10 V to 6.5 V 160 25 50 75 100 125 150 175 100K TJ = 175°C TJ = 150°C 10K TJ = 125°C 1K 100 0 30 60 90 120 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 150 NVMTS4D3N15MC TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) 10K CISS C, CAPACITANCE (pF) 1K COSS 100 10 0 1K 25 50 100 125 150 6 5 4 3 VDS = 75 V ID = 95 A TJ = 25°C 2 1 0 10 0 20 30 40 50 60 70 Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 1K VGS = 10 V VDS = 75 V ID = 95 A tr td(off) tf 1 10 80 VGS = 0 V 100 10 TJ = 175°C 1 0.1 100 TJ = 150°C TJ = 25°C 0.2 0.3 0.4 0.5 0.6 TJ = −55°C 0.7 0.8 0.9 1.0 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 1000 100 IPEAK, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) QGD QGS 7 Figure 7. Capacitance Variation 10 10 ms 100 10 1 8 QG, TOTAL GATE CHARGE (nC) td(on) 1 QG(TOT) 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 t, TIME (ns) 75 IS, SOURCE CURRENT (A) 1 CRSS VGS = 0 V TJ = 25°C f = 1 MHz 10 TC = 25°C Single Pulse VGS ≤ 10 V 0.1 0.1 0.5 ms 1 ms 10 ms RDS(on) Limit Thermal Limit Package Limit 1 10 100 1000 TJ(initial) = 25°C 10 1 0.0001 TJ(initial) = 125°C 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (sec) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 0.01 NVMTS4D3N15MC TYPICAL CHARACTERISTICS 100 50% Duty Cycle 20% 10% 5% 1 2% 1% RqJC (°C/W) 10 0.1 0.01 0.001 Single Pulse 0.0001 0.0000001 0.000001 0.00001 0.0001 0.001 0.01 0.1 PULSE TIME (sec) Figure 13. Thermal Characteristics www.onsemi.com 5 1 10 100 1000 NVMTS4D3N15MC PACKAGE DIMENSIONS DFNW8 8.3x8.4, 2P CASE 507AP ISSUE A www.onsemi.com 6 NVMTS4D3N15MC ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. 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