MOSFET – Power, Single
N-Channel, Logic Level,
SOT-23
60 V, 155 mW
NVR5198NL
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Features
• Small Footprint Industry Standard Surface Mount SOT−23 Package
• Low RDS(on) for Low Conduction Losses and Improved Efficiency
• NVR Prefix for Automotive and Other Applications Requiring
•
V(BR)DSS
RDS(on) TYP
ID MAX
155 mW @ 10 V
60 V
2.2 A
205 mW @ 4.5 V
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
N−Channel
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
ID
2.2
A
Parameter
Continuous Drain
Current RYJmb
(Notes 1, 2, 3, and 4)
Steady
State
Power Dissipation
RYJmb
(Notes 1 and 3)
Continuous Drain
Current RqJA
(Note 1, 2, 3, and 4)
Tmb = 25°C
Tmb = 100°C
Tmb = 25°C
Power Dissipation
RqJA (Notes 1 and 3)
Pulsed Drain Current
TA = 25°C
PD
ID
PD
A
1.7
0.9
W
0.4
IDM
27
TJ,
Tstg
−55 to
150
°C
Source Current (Body Diode)
IS
1.9
A
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
Operating Junction and Storage Temperature
October, 2019 − Rev. 3
MARKING DIAGRAM/
PIN ASSIGNMENT
Drain
3
1
2
SOT−23
CASE 318
STYLE 21
AAL M G
G
1
Gate
2
Source
A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. The entire application environment impacts the thermal resistance values
shown, they are not constants and are only valid for the particular conditions
noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2011
3
W
1.2
TA = 100°C
TA = 25°C,
tp = 10 ms
1.5
0.6
TA = 100°C
TA = 25°C
S
1.6
Tmb = 100°C
Steady
State
G
1
AAL
M
G
= Device Code
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
ORDERING INFORMATION
Package
Shipping†
NVR5198NLT1G
SOT−23
(Pb−Free)
3000 /
Tape & Reel
NVR5198NLT3G
SOT−23
(Pb−Free)
10000 /
Tape & Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
Publication Order Number:
NVR5198NL/D
NVR5198NL
THERMAL RESISTANCE RATINGS
Symbol
Max
Unit
Junction−to−Lead #3 − Drain (Notes 2 and 3)
Parameter
RYJmb
86
°C/W
Junction−to−Ambient − Steady State (Note 3)
RqJA
139
°C/W
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Conditions
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Reference to 25°C, ID = 250 mA
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
IGSS
VGS = 0 V,
VDS = 60 V
V
70
TJ = 25°C
mV/°C
1.0
TJ = 125°C
mA
10
VDS = 0 V, VGS = "20 V
"100
nA
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On−Resistance
VGS(TH)
VGS = VDS, ID = 250 mA
VGS(TH)/TJ
Reference to 25°C, ID = 250 mA
−6.5
RDS(on)
VGS = 10 V, ID = 1 A
107
155
VGS = 4.5 V, ID = 1 A
142
205
gFS
VDS = 5.0 V, ID = 1 A
3
S
182
pF
Forward Transconductance
1.5
2.5
V
mV/°C
mW
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
VDS = 48 V,
ID = 1 A
25
16
VGS = 4.5 V
2.8
VGS = 10 V
5.1
nC
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
0.3
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
3.1
V
Gate Resistance
RG
8
W
td(on)
5
ns
tr
7
VDS = 48 V, ID = 1 A
VGS = 10 V
0.8
1.5
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(off)
VDS = 30 V, VGS = 10 V,
ID = 1 A, RG = 10 W
tf
13
2
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
trr
Charge Time
ta
Discharge Time
tb
Reverse Recovery Stored Charge
VGS = 0 V,
IS = 1 A
TJ = 25°C
0.8
TJ = 125°C
0.6
12
IS = 1 Adc, VGS = 0 Vdc,
dIS/dt = 100 A/ms
QRR
1.2
V
ns
9
3
6
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVR5198NL
VGS = 10 V
VGS = 6.0 V
VGS = 3.0 V
ID, DRAIN CURRENT (A)
VGS = 5.0 V
VGS = 4.5 V
VGS = 4.0 V
VGS = 3.8 V
VGS = 3.6 V
VGS = 3.4 V
VGS = 3.2 V
0
1
2
3
4
5
TJ = 25°C
TJ = 150°C
TJ = −55°C
3
5
4
Figure 2. Transfer Characteristics
ID = 1 A
TJ = 25°C
0.40
0.35
0.30
0.25
0.20
0.15
0.10
5
4
6
7
8
9
10
VGS, GATE VOLTAGE (V)
0.50
TJ = 25°C
0.45
0.35
0.30
0.25
VGS = 10 V
0.20
0.15
0.10
0.05
0
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
1
2
3
4
5
6
7
8
9 10 11 12 13 14 15
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
ID = 1 A
VGS = 10 V
−25
VGS = 4.5 V
0.40
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
2.0
1.9
1.8
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
−50
2
1
Figure 1. On−Region Characteristics
0.45
3
VDS = 5 V
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.50
0.05
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
15
14
13
12
11
10
9
8
7
6
5
4
3
2
1
0
150
BVDSS, NORMALIZED BREAKDOWN VOLTAGE
RDS(on), DRAIN−TO−SOURCE RESISTANCE (Normalized)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (A)
TYPICAL CHARACTERISTICS
1.150
1.125
ID = 250 mA
1.100
1.075
1.050
1.025
1.000
0.975
0.950
0.925
0.900
−50
Figure 5. On−Resistance Variation with
Temperature
−25
0
25
50
75
100
125
TJ, JUNCTION TEMPERATURE (°C)
Figure 6. Breakdown Voltage Variation with
Temperature
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3
150
NVR5198NL
1.20
1.15
10,000
ID = 250 mA
TJ = 150°C
IDSS, LEAKAGE (nA)
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0
−25
25
50
75
100
TJ = 85°C
10
100
125
225
20
12
11
10
9
TJ = 25°C
f = 1 MHz
VGS = 0 V
125
100
75
COSS
25
CRSS
0
0 5 10 15
25
30
35 40
45
50 55 60
20
25
30 35
40
45 50
55
60
60
55
50
45
QT
8
7
VDS
40
35
VGS
30
6
5
4
3
2
1
0
QGS
0
QGD
VDS = 48 V
ID = 1 A
TJ = 25°C
25
20
15
10
5
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 9. Capacitance Variation
Figure 10. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
100
10
10
VDD = 30 V
ID = 1 A
VGS = 10 V
IS, SOURCE CURRENT (A)
td(off)
tr
td(on)
tf
1
1
10 15
Figure 8. Drain−to−Source Leakage Current
vs. Voltage
150
0.1
5
Figure 7. Threshold Voltage Variation with
Temperature
175
50
0
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
CISS
200
1
150
TJ, JUNCTION TEMPERATURE (°C)
250
t, TIME (ns)
TJ = 125°C
10
TJ = 125°C
TJ = 100°C
TJ = 85°C
1
0.1
100
TJ = 150°C
TJ = 25°C
0.4
0.5
0.6
0.7
0.8
TJ = −55°C
0.9
1.0
1.1
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 11. Resistive Switching Time Variation
vs. Gate Resistance
Figure 12. Diode Forward Voltage vs. Current
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4
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.65
0.60
−50
275
C, CAPACITANCE (pF)
1000
0.70
VGS, GATE−TO−SOURCE VOLTAGE (V)
VGS(th), NORMALIZED THRESHOLD VOLTAGE
TYPICAL CHARACTERISTICS
NVR5198NL
TYPICAL CHARACTERISTICS
ID, DRAIN CURRENT (A)
100
10
10 mS
100 mS
1
1 mS
10 mS
0.1
0.01
R(t), EFFECTIVE TRANSIENT THERMAL RESPONSE (°C/W)
VGS ≤ 10 V
Single Pulse
TA = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.1
dc
1
10
100
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 13. Maximum Rated Forward Biased
Safe Operating Area
1000
100 50% Duty Cycle
20%
10%
RqJA Steady State = 139°C/W
10 5%
2%
1%
1
0.000001
Single Pulse
0.00001
0.0001
0.001
0.01
0.1
1
t, TIME (sec)
Figure 14. Thermal Impedance (Junction−to−Ambient)
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5
10
100
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SOT−23 (TO−236)
CASE 318−08
ISSUE AS
DATE 30 JAN 2018
SCALE 4:1
D
0.25
3
E
1
2
T
HE
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH.
MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF
THE BASE MATERIAL.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS.
DIM
A
A1
b
c
D
E
e
L
L1
HE
T
L
3X b
L1
VIEW C
e
TOP VIEW
A
A1
SIDE VIEW
SEE VIEW C
c
MIN
0.89
0.01
0.37
0.08
2.80
1.20
1.78
0.30
0.35
2.10
0°
MILLIMETERS
NOM
MAX
1.00
1.11
0.06
0.10
0.44
0.50
0.14
0.20
2.90
3.04
1.30
1.40
1.90
2.04
0.43
0.55
0.54
0.69
2.40
2.64
−−−
10 °
MIN
0.035
0.000
0.015
0.003
0.110
0.047
0.070
0.012
0.014
0.083
0°
INCHES
NOM
0.039
0.002
0.017
0.006
0.114
0.051
0.075
0.017
0.021
0.094
−−−
MAX
0.044
0.004
0.020
0.008
0.120
0.055
0.080
0.022
0.027
0.104
10°
GENERIC
MARKING DIAGRAM*
END VIEW
RECOMMENDED
SOLDERING FOOTPRINT
XXXMG
G
1
3X
2.90
3X
XXX = Specific Device Code
M = Date Code
G
= Pb−Free Package
0.90
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
0.95
PITCH
0.80
DIMENSIONS: MILLIMETERS
STYLE 1 THRU 5:
CANCELLED
STYLE 6:
PIN 1. BASE
2. EMITTER
3. COLLECTOR
STYLE 7:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
STYLE 9:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 10:
PIN 1. DRAIN
2. SOURCE
3. GATE
STYLE 11:
STYLE 12:
PIN 1. ANODE
PIN 1. CATHODE
2. CATHODE
2. CATHODE
3. CATHODE−ANODE
3. ANODE
STYLE 15:
PIN 1. GATE
2. CATHODE
3. ANODE
STYLE 16:
PIN 1. ANODE
2. CATHODE
3. CATHODE
STYLE 17:
PIN 1. NO CONNECTION
2. ANODE
3. CATHODE
STYLE 18:
STYLE 19:
STYLE 20:
PIN 1. NO CONNECTION PIN 1. CATHODE
PIN 1. CATHODE
2. CATHODE
2. ANODE
2. ANODE
3. GATE
3. ANODE
3. CATHODE−ANODE
STYLE 21:
PIN 1. GATE
2. SOURCE
3. DRAIN
STYLE 22:
PIN 1. RETURN
2. OUTPUT
3. INPUT
STYLE 23:
PIN 1. ANODE
2. ANODE
3. CATHODE
STYLE 24:
PIN 1. GATE
2. DRAIN
3. SOURCE
STYLE 27:
PIN 1. CATHODE
2. CATHODE
3. CATHODE
STYLE 28:
PIN 1. ANODE
2. ANODE
3. ANODE
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42226B
SOT−23 (TO−236)
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
STYLE 13:
PIN 1. SOURCE
2. DRAIN
3. GATE
STYLE 25:
PIN 1. ANODE
2. CATHODE
3. GATE
STYLE 14:
PIN 1. CATHODE
2. GATE
3. ANODE
STYLE 26:
PIN 1. CATHODE
2. ANODE
3. NO CONNECTION
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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