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onsemi and and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or
subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi
product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without
notice. The information herein is provided “as-is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality,
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liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws,
regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/
or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application
by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized
for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for
implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees,
subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative
Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others.
MOSFET - Power, Single
N-Channel
80 V, 7 mW, 71 A
NVTFS007N08HL
Features
•
•
•
•
•
•
Small Footprint (3.3x3.3 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
NVTFWS007N08HL − Wettable Flank Option for Enhanced Optical
Inspection
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
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V(BR)DSS
RDS(on) MAX
ID MAX
80 V
7 mW @ 10 V
71 A
N−Channel
D (5 − 8)
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
80
V
Gate−to−Source Voltage
VGS
±20
V
ID
71
A
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 100°C
TC = 25°C
Power Dissipation
RqJA (Notes 1, 2)
Pulsed Drain Current
Steady
State
PD
W
79
ID
A
14.4
10.2
PD
GS S S
1.6
IDM
347
A
TJ, Tstg
−55 to
+175
°C
IS
66
A
Single Pulse Drain−to−Source Avalanche
Energy (IAS = 3.9 A)
EAS
1433
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State (Note 2)
RqJC
1.9
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
46
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2020
January, 2021 − Rev. 1
Pin 1
W
3.3
TA = 100°C
TA = 25°C, tp = 10 ms
DDD D
40
TA = 100°C
TA = 25°C
S (1, 2, 3)
50
TC = 100°C
TA = 25°C
G (4)
1
WDFN8
(3.3x3.3, 0.65 P)
CASE 511DY
WDFNW8
(3.3x3.3, 0.65 P)
CASE 515AP
MARKING DIAGRAMS
7V08
AYWW
7x08
A
Y
WW
G
7W08
AYWWG
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Publication Order Number:
NVTFS007N08HL/D
NVTFS007N08HL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
80
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
21.6
VGS = 0 V,
VDS = 80 V
mV/°C
TJ = 25°C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 270 mA
mA
100
nA
3.0
V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
1.0
1.5
4.8
mV/°C
VGS = 10 V
ID = 16 A
5.8
7.0
mW
VGS = 4.5 V
ID = 10 A
8.7
10.88
mW
CHARGES AND CAPACITANCES
Ciss
Input Capacitance
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
pF
1810
VGS = 0 V, f = 1.0 MHz,
VDS = 40 V
VGS = 4.5 V, VDS = 40 V, ID = 16 A
227
14.1
Total Gate Charge
QG(TOT)
15.9
nC
Total Gate Charge
QG(TOT)
32.5
nC
Threshold Gate Charge
QG(TH)
3.0
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
5.6
Plateau Voltage
VGP
2.8
V
td(on)
7.0
ns
VGS = 10 V, VDS = 40 V, ID = 16 A
5.2
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = 10 V, VDS = 40 V,
ID = 16 A, RG = 2.5 W
tf
3.7
29.3
2.7
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Reverse Recovery Charge
QRR
VGS = 0 V,
IS = 16 A
TJ = 25°C
0.8
TJ = 125°C
0.67
VGS = 0 V, dlS/dt = 100 A/ms,
IS = 16 A
1.2
V
40
ns
40.3
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NVTFS007N08HL
TYPICAL CHARACTERISTICS
3.4 V
ID, DRAIN CURRENT (A)
75
60
3.0 V
45
30
2.6 V
15
0
1
0.5
1.5
2
2.5
3
3.5
25
TJ = 25°C
TJ = 125°C
0
3
3.5
4
7
6
5
4
6
5
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
4.5
TJ = 25°C
9
8
VGS = 4.5 V
7
6
VGS = 10 V
5
4
20
60
40
100
80
ID, DRAIN CURRENT (A)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.5
100K
VGS = 10 V
ID = 16 A
IDSS, LEAKAGE (nA)
10K
1.9
1.7
1.5
1.3
1.1
TJ = 150°C
TJ = 125°C
1K
TJ = 85°C
100
TJ = 25°C
10
0.9
0.7
0.5
−50 −25
0
25
50
75
100
125
150
5
10
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
2.5
Figure 2. Transfer Characteristics
8
2.1
2
1.5
1
Figure 1. On−Region Characteristics
9
2.3
0.5
TJ = −55°C
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
ID = 16 A
3
50
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
10
4
75
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
VGS = 4.5 V − 10 V
ID, DRAIN CURRENT (A)
90
175
1
5
15
25
35
45
55
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NVTFS007N08HL
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
10K
CISS
C, CAPACITANCE (pF)
1K
COSS
100
CRSS
10
10
0
1000
20
30
40
50
60
70
7
6
5
QGS
4
QGD
3
VDS = 40 V
ID = 16 A
TJ = 25°C
2
1
0
0
10
5
20
15
25
30
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
35
100
VGS = 10 V
VDS = 40 V
ID = 16 A
VGS = 0 V
td(off)
tf
td(on)
10
1
10
10
1
TJ = 125°C
TJ = 25°C
0.1
0.3
0.4
0.5
0.6
100
TJ = −55°C
0.7
0.8
0.9
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
100
10
10 ms
IPEAK (A)
ID, DRAIN CURRENT(A)
8
QG, TOTAL GATE CHARGE (nC)
tr
1
9
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
t, TIME (ns)
80
IS, SOURCE CURRENT (A)
10
VGS = 0 V
TJ = 25°C
f = 1 MHz
10
10
1
0.1
VGS ≤ 10 V
Single Pulse
TC = 25°C
TJ(initial) = 100°C
1
RDS(on) Limit
Thermal Limit
Package Limit
0.1
TJ(initial) = 25°C
1
10
0.5 ms
1 ms
10 ms
100
1000
0.1
0.0001
0.001
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
0.01
NVTFS007N08HL
TYPICAL CHARACTERISTICS
100
Duty Cycle = 0.5
R(t) (°C/W)
10
1
0.2
0.1
0.05
0.02
0.01
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Marking
Package
Shipping†
NVTFS007N08HLTAG
7V08
WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFWS007N08HLTAG
7W08
WDFNW8
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
www.onsemi.com
5
NVTFS007N08HL
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DY
ISSUE A
B
0.20 C
D
0.10
2X
e/2
8
C A B
D2
A
5
5
8
L1
G
E
E1
0.10
PIN 1
AREA
1
4
M
E3
E2
C A B
L
2X
0.20 C
b
K
G1
4
1
(8X)
e
0.10
0.05
TOP VIEW
C A B
C
BOTTOM VIEW
SIDE VIEW
NOTES:
(4X)
D1
Ө
1. CONTROLLING DIMENSION: MILLIMETERS
2. DIMENSIONS D1 & E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS NOR GATE BURRS.
A
0.10 C
c
A1
(8X)
0.10 C
DIM
C
SEATING PLANE
A
A1
b
c
D
D1
D2
END VIEW
3.46
8
2.38
5
E
E1
E2
E3
e
G
G1
K
L
L1
M
0.78 (4X)
0.75
2.51
4.10
0.57
1.00
0.60 (3X)
0.65
1
4
Ө
0.43 (8X)
RECOMMENDED LAND PATTERN
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6
MILLIMETERS
MIN NOM MAX
0.70 0.75 0.80
0.00
0.05
−
0.23 0.33 0.43
0.15 0.20 0.25
3.20 3.30 3.40
2.95 3.13 3.30
1.98
2.20 2.40
3.20 3.30 3.40
2.80 3.00 3.15
1.40 1.60 1.80
0.15 0.25 0.40
0.30
0.25
0.55
0.35
0.06
1.35
0
0.65 BSC
0.43 0.55
0.35 0.45
0.75 0.95
0.52 0.65
0.15 0.30
1.50 1.60
−
12
NVTFS007N08HL
PACKAGE DIMENSIONS
WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL Fused WF)
CASE 515AP
ISSUE O
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7
NVTFS007N08HL
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent
coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer
application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT:
Email Requests to: orderlit@onsemi.com
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8
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