NVTFS010N10MCLTAG

DATA SHEET www.onsemi.com MOSFET - Power, Single N-Channel V(BR)DSS RDS(on) MAX ID MAX 10.6 mW @ 10 V 100 V 57.8 A 15.9 mW @ 4.5 V 100 V, 10.6 mW, 57.8 A N−Channel NVTFS010N10MCL D (5 − 8) Features       Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NVTFWS010N10MCLTAG − Wettable Flanks Product AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant G (4) S (1, 2, 3) 8 7 6 5 DDD D MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RqJC (Notes 1, 2, 3) TC = 25C Power Dissipation RqJC (Notes 1, 2) Continuous Drain Current RqJA (Notes 1, 2, 3) Steady State Value Unit VDSS 100 V 1 2 3 4 VGS 20 V Top ID 57.8 A TC = 100C TC = 25C 40.8 PD TC = 100C TA = 25C Power Dissipation RqJA (Notes 1, 2) Symbol Steady State ID A 11.7 8.3 3.2 IDM 232 A IS 64.8 A TJ, Tstg −55 to +175 C Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 2.9 A) EAS 526 mJ Lead Temperature for Soldering Purposes (1/8 from case for 10 s) TL TA = 100C TC = 25C, tp = 10 ms Source Current Operating Junction and Storage Temperature Range W 1.6 260 C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter WDFN8 (3.3x3.3, 0.65 P) CASE 511DY 38.9 PD Pulsed Drain Current GS S S Pin 1 Bottom W 77.8 TA = 100C TA = 25C Pin 1 Symbol Value Unit Junction−to−Case − Steady State (Note 2) RqJC 1.93 C/W Junction−to−Ambient − Steady State (Note 2) RqJA 46.6 WDFNW8 (Full−Cut m8FL Fused WF) CASE 515AP MARKING DIAGRAM N10x AYWW N10x = Specific Device Code x = L or W A = Assembly Location Y = Year Code WW = Work Week Code ORDERING INFORMATION See detailed ordering, marking and shipping information on page 5 of this data sheet. 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 3. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.  Semiconductor Components Industries, LLC, 2018 September, 2022 − Rev. 1 1 Publication Order Number: NVTFS010N10MCL/D NVTFS010N10MCL ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 100 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current V 64 VGS = 0 V, VDS = 80 V mV/C TJ = 25C 1.0 TJ = 125C 250 IGSS VDS = 0 V, VGS = 20 V VGS(TH) VGS = VDS, ID = 85 mA 100 mA nA ON CHARACTERISTICS (Note 4) Gate Threshold Voltage Threshold Temperature Coefficient VGS(TH)/TJ Drain−to−Source On Resistance Forward Transconductance RDS(on) 1.0 1.5 3.0 −5.3 VGS = 10 V ID = 15 A 9.1 10.6 VGS = 4.5 V ID = 12 A 13.5 15.9 gFS VDS =5 V, ID = 15 A V mV/C 54 mW S CHARGES AND CAPACITANCES Input Capacitance CISS 1530 2150 Output Capacitance COSS 625 875 Reverse Transfer Capacitance CRSS 10 18 VGS = 0 V, f = 1 MHz, VDS = 50 V Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 50 V; ID = 15 A 10 Total Gate Charge QG(TOT) VGS = 10 V, VDS = 50 V; ID = 15 A 22 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD VGS = 10 V, VDS = 50 V; ID = 15 A 30 4.0 pF nC nC 3.0 SWITCHING CHARACTERISTICS (Note 5) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 9.0 VGS = 10 V, VDS = 50 V, ID = 15 A, RG = 6 W tf 3.0 ns 28 5.0 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage VSD Reverse Recovery Time tRR Reverse Recovery Charge QRR Reverse Recovery Time tRR Reverse Recovery Charge QRR VGS = 0 V, IS = 15 A IF = 8 A, di/dt = 300 A/ms IF = 8 A, di/dt = 1000 A/ms 0.8 1.3 V 22 36 ns 35 56 nC 17 30 ns 79 126 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 4. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 5. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVTFS010N10MCL TYPICAL CHARACTERISTICS (TJ = 25C UNLESS OTHERWISE NOTED) 80 VGS = 10 V VDS = 5 V VGS = 8 V 120 90 VGS = 6 V ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 150 VGS = 4.5 V 60 VGS = 3.5 V 30 0 VGS = 3 V 0 1 2 3 4 60 40 20 0 5 TJ = 150 oC TJ = −55oC 1 Figure 1. On Region Characteristics 4 60 40 20 VGS = 4.5 V 20 10 VGS = 10 V 2 3 0 4 5 6 7 8 9 10 VGS, GATE TO SOURCE VOLTAGE (V) 0 30 60 90 120 150 ID, DRAIN CURRENT (A) Figure 3. On-Resistance vs. Gate to Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage IDSS , REVERSE LEAKAGE CURRENT (mA) 2.2 2.0 6 30 TJ = 25 oC 0 5 40 ID = 15 A R DS(on), ON−RESISTANCE (mW) rDS(on), DRAIN TO 3 Figure 2. Transfer Characteristics 80 SOURCE ON−RESISTANCE (mW) 2 VGS, GATE TO SOURCE VOLTAGE (V) VDS, DRAIN TO SOURCE VOLTAGE (V) NORMALIZED DRAIN TO SOURCE ON−RESISTANCE TJ = 25 oC ID = 15 A VGS = 10 V 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0 25 50 75 100 125 150 175 −75 −50 −25 TJ, JUNCTION TEMPERATUREo(C) 1.0E−01 1.0E−02 1.0E−03 1.0E−04 TJ = 175 oC TJ = 150 oC TJ = 125 oC TJ = 85 oC 1.0E−05 1.0E−06 TJ = 25 oC 1.0E−07 1.0E−08 10 20 30 40 50 60 70 80 VDS , DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. Normalized On Resistance vs. Junction Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 NVTFS010N10MCL TYPICAL CHARACTERISTICS (TJ = 25C UNLESS OTHERWISE NOTED) 10000 10 1000 Coss 100 Crss 10 f = 1 MHz VGS = 0 V 1 0.1 1 QTOT VGS, GATE TO SOURCE VOLTAGE (V) CAPACITANCE (pF) Ciss 10 8 6 QGS 4 QGD 2 0 100 VDS = 50 V ID = 15 A 0 5 VDS, DRAIN TO SOURCE VOLTAGE (V) VGS = 10 V IS, REVERSE DRAIN CURRENT (A) t SW , SWITCHING TIME (nS) 100 Tf VDS = 50 V Tr 10 1 Td(on) 0 5 10 15 20 25 30 35 40 20 25 Figure 8. Gate Charge Characteristics Td(off) ID = 15 A 15 Qg, GATE CHARGE (nC) Figure 7. Capacitance vs. Drain to Source Voltage 200 10 45 150 100 VGS = 0 V 10 1 TJ = 150 oC TJ = 25 oC 0.1 0.01 TJ = −55oC 0.001 0.0 50 0.2 0.4 0.6 0.8 1.0 RG , GATE RESISTANCE ( W ) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Source to Drain Diode Forward Voltage vs. Source Current 300 1.2 100 10 m s 10 10 THIS AREA IS LIMITED BY r DS(on) 100 m s 1 1 0.1 1 ms 10 ms 100 ms/DC CURVE BENT TO MEASURED DATA 0.1 1 10 100 TJ (initial) = 25 oC Ipeak (A) ID, DRAIN CURRENT (A) 100 0.1 0.00001 300 TJ (initial) = 100 oC 0.0001 0.001 tAV, TIME IN AVALANCHE (s) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Unclamped Inductive Switching Capability www.onsemi.com 4 0.01 NVTFS010N10MCL TYPICAL CHARACTERISTICS (CONTINUED) 100 R(t) (C/W) 10 1 D = 0.5 0.2 0.1 0.05 0.02 0.01 0.1 SINGLE PULSE 0.01 −6 10 10 −5 10 −4 10 −3 10 −2 10 −1 1 10 100 1000 PULSE TIME (sec) Figure 13. Junction−to−Case Transient Thermal Response Curve DEVICE ORDERING INFORMATION Marking Package Shipping† NVTFS010N10MCLTAG N10L WDFN8 (Pb−Free) 1500 / Tape & Reel NVTFWS010N10MCLTAG N10W WDFNW8 (Pb−Free, Wettable Flanks) 1500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511DY ISSUE A DATE 21 AUG 2018 GENERIC MARKING DIAGRAM* XXXX AYWW XXXX A Y WW = Specific Device Code = Assembly Location = Year Code = Work Week Code *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON90827G WDFN8 3.3x3.3, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL Fused WF) CASE 515AP ISSUE O GENERIC MARKING DIAGRAM* XXXX AYWWG G DOCUMENT NUMBER: DESCRIPTION: DATE 25 AUG 2020 XXXX = Specific Device Code *This information is generic. Please refer to A = Assembly Location device data sheet for actual part marking. Y = Year Pb−Free indicator, “G” or microdot “G”, may or may not be present. Some products may WW = Work Week not follow the Generic Marking. G = Pb−Free Package (Note: Microdot may be in either location) 98AON24557H Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL Fused WF) PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the rights of others. © Semiconductor Components Industries, LLC, 2018 www.onsemi.com onsemi, , and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using onsemi products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by onsemi. “Typical” parameters which may be provided in onsemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license under any of its intellectual property rights nor the rights of others. onsemi products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Email Requests to: orderlit@onsemi.com onsemi Website: www.onsemi.com ◊ TECHNICAL SUPPORT North American Technical Support: Voice Mail: 1 800−282−9855 Toll Free USA/Canada Phone: 011 421 33 790 2910 Europe, Middle East and Africa Technical Support: Phone: 00421 33 790 2910 For additional information, please contact your local Sales Representative