NVTFS4C25NTAG

MOSFET - Power, Single N-Channel, m8FL 30 V, 17 mW, 22 A NVTFS4C25N Features • • • • • • Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses NVTFS4C25NWF − Wettable Flanks Product NVT Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant www.onsemi.com V(BR)DSS RDS(on) MAX ID MAX 17 mW @ 10 V 30 V 26.5 mW @ 4.5 V 22 A N−Channel MOSFET D (5−8) MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Symbol Value Unit Drain−to−Source Voltage VDSS 30 V Gate−to−Source Voltage VGS ±20 V ID 10.1 A Continuous Drain Current RqJA (Notes 1, 3, 5) TA = 25°C Steady State Power Dissipation RqJA (Notes 1, 3, 5) Continuous Drain Current RyJC (Notes 1, 2, 4, 5) TA = 25°C TC = 25°C Steady State PD ID TC = 85°C TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, IL = 6.7 Apk, L = 0.5 mH) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) 1 22.1 A 17.1 PD 14.3 W 8.6 IDM 90 A TJ, Tstg −55 to +175 °C IS 14 A EAS 11.2 mJ TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. The entire application environment impacts the thermal resistance values shown; they are not constants and are valid for the specific conditions noted. 2. Psi (y) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to a single case surface. 3. Surface−mounted on FR4 board using 650 mm2, 2 oz. Cu Pad. 4. Assumes heat−sink sufficiently large to maintain constant case temperature independent of device power. 5. Continuous DC current rating. Maximum current for pulses as long as one second is higher but dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2014 September, 2019 − Rev. 2 MARKING DIAGRAM W 3.0 1.8 TC = 85°C TC = 25°C S (1,2,3) 7.8 TA = 85°C Power Dissipation RyJC (Notes 1, 2, 4, 5) Pulsed Drain Current TA = 85°C G (4) 1 WDFN8 (m8FL) CASE 511AB 4C25 25WF A Y WW G 1 S S S G XXXX AYWWG G D D D D = Specific Device Code for NVMTS4C25N = Specific Device Code of NVTFS4C25NWF = Assembly Location = Year = Work Week = Pb−Free Package (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering and shipping information on page 6 of this data sheet. Publication Order Number: NVTFS4C25N/D NVTFS4C25N THERMAL RESISTANCE MAXIMUM RATINGS Symbol Value Junction−to−Case (Drain) (Notes 6, 7 and 9) Parameter YqJC 10.5 Junction−to−Ambient – Steady State (Notes 6 and 8) RqJA 50 Unit °C/W 6. The entire application environment impacts the thermal resistance values shown; they are not constants and are valid for the specific conditions noted. 7. Psi (y) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to a single case surface. 8. Surface−mounted on FR4 board using 650 mm2, 2 oz. Cu Pad. 9. Assumes heat−sink sufficiently large to maintain constant case temperature independent of device power. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Drain−to−Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient V(BR)DSS/ TJ Typ Max Unit OFF CHARACTERISTICS Zero Gate Voltage Drain Current Gate−to−Source Leakage Current IDSS V 15.3 VGS = 0 V, VDS = 24 V mV/°C TJ = 25°C 1.0 TJ = 125°C 10 IGSS VDS = 0 V, VGS = ±20 V VGS(TH) VGS = VDS, ID = 250 mA mA ±100 nA 2.2 V ON CHARACTERISTICS (Note 10) Gate Threshold Voltage Threshold Temperature Coefficient Drain−to−Source On Resistance VGS(TH)/TJ RDS(on) 1.3 −4.5 mV/°C VGS = 10 V ID = 10 A 13 17 VGS = 4.5 V ID = 9 A 21 26.5 mW Forward Transconductance gFS VDS = 1.5 V, ID = 15 A 23 S Gate Resistance RG TA = 25°C 1.0 W CHARGES AND CAPACITANCES Input Capacitance CISS Output Capacitance COSS Reverse Transfer Capacitance CRSS 500 VGS = 0 V, f = 1 MHz, VDS = 15 V 295 Capacitance Ratio CRSS/CISS Total Gate Charge QG(TOT) 5.1 Threshold Gate Charge QG(TH) 0.9 Gate−to−Source Charge QGS Gate−to−Drain Charge QGD Gate Plateau Voltage Total Gate Charge pF 85 VGS = 0 V, VDS = 15 V, f = 1 MHz VGS = 4.5 V, VDS = 15 V; ID = 20 A 0.170 1.7 nC 2.7 VGP QG(TOT) VGS = 10 V, VDS = 15 V; ID = 20 A 3.3 V 10.3 nC SWITCHING CHARACTERISTICS (Note 11) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(ON) tr td(OFF) 8.0 VGS = 4.5 V, VDS = 15 V, ID = 10 A, RG = 3.0 W 32 10 tf 3.0 td(ON) 4.0 tr td(OFF) VGS = 10 V, VDS = 15 V, ID = 15 A, RG = 3.0 W tf 25 13 2.0 10. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 11. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 ns ns NVTFS4C25N ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter Symbol Test Condition Min Typ Max TJ = 25°C 0.87 1.2 TJ = 125°C 0.75 Unit DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge VSD VGS = 0 V, IS = 10 A tRR ta tb V 18.2 VGS = 0 V, dIS/dt = 100 A/ms, IS = 30 A QRR 9.8 8.4 5.7 10. Pulse Test: pulse width v 300 ms, duty cycle v 2%. 11. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 ns nC NVTFS4C25N TYPICAL CHARACTERISTICS 40 40 4.5 V to 10 V 3.8 V 25 3.6 V 20 3.4 V 15 3.2 V 10 3.0 V 5 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 4.0 V 30 TJ = 25°C 0 1 3 2 4 TJ = 125°C 10 TJ = 25°C 0 5 TJ = −55°C 0 0.022 0.012 2.0 2.5 3.0 3.5 4.0 4.0 5.0 6.0 7.0 8.0 9.0 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 4.5 5.0 TJ = 25°C 0.045 0.035 VGS = 4.5 V 0.025 0.015 0.005 VGS = 10 V 10 20 30 40 50 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. VGS Figure 4. On−Resistance vs. Drain Current and Gate Voltage 1.9 10000 VGS = 0 V ID = 10 A VGS = 10 V TJ = 150°C 1.6 IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 1.5 Figure 2. Transfer Characteristics 0.032 1.7 1.0 Figure 1. On−Region Characteristics 0.042 1.8 0.5 VGS, GATE−TO−SOURCE VOLTAGE (V) ID = 30 A 3.0 20 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 0.052 0.002 30 2.8 V RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) 35 0 VDS = 5 V 4.2 V 1.5 1.4 1.3 1.2 1.1 1.0 1000 TJ = 125°C 100 TJ = 85°C 10 0.9 0.8 0.7 −50 −25 0 25 50 75 100 125 150 175 1 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 4 30 NVTFS4C25N 800 VGS = 0 V TJ = 25°C 700 C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) TYPICAL CHARACTERISTICS Ciss 600 500 Coss 400 300 200 Crss 100 0 0 5 10 15 20 25 30 10 QT 8 6 TJ = 25°C VDD = 15 V VGS = 10 V ID = 20 A 2 0 0 6 8 10 Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 12 20 VGS = 0 V IS, SOURCE CURRENT (A) 18 tr td(off) 10 td(on) tf 1 VDD = 15 V ID = 15 A VGS = 10 V 16 14 12 10 8 TJ = 25°C TJ = 125°C 6 4 2 1 10 0 100 0.4 0.5 0.6 0.7 0.8 0.9 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 ID, DRAIN CURRENT (A) t, TIME (ns) 4 2 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 100 0.1 Qgd Qgs 4 NVTFS4C25N FBSOA TC = 25°C, VGS = 10 V 10 0.01 ms 0.1 ms 1 1 ms 0.1 0.1 dc 1 10 ms 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 11. Maximum Rated Forward Biased Safe Operating Area www.onsemi.com 5 100 1.0 NVTFS4C25N TYPICAL CHARACTERISTICS 100 qJA, 650 mm2, 2 oz Cu Pad, single layer on FR4 R(t) (°C/W) 10 YJC, infinite heat sink assumption @ 1% Duty Cycle @ 2% Duty Cycle @ 5% Duty Cycle @ 10% Duty Cycle @ 20% Duty Cycle @ 50 % Duty Cycle RqJA Single Pulse RYJA Single Pulse 1 0.1 0.000001 0.00001 0.0001 0.001 0.1 0.01 1 10 100 1000 PULSE TIME (sec) Figure 12. Thermal Response 100 30 ID, DRAIN CURRENT (A) 25 GFS (S) 20 15 10 5 0 0 5 10 15 20 25 30 35 TJ(initial) = 25°C 10 TJ(initial) = 85°C 1 1.E−06 40 1.E−05 1.E−04 ID (A) PULSE WIDTH (SECONDS) Figure 13. GFS vs. ID Figure 14. Avalanche Characteristics 1.E−03 ORDERING INFORMATION Marking Package Shipping† NVTFS4C25NTAG 4C25 WDFN8 (Pb−Free) 1500 / Tape & Reel NVTFS4C25NWFTAG 25WF WDFN8 (Pb−Free) 1500 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 6 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS WDFN8 3.3x3.3, 0.65P CASE 511AB ISSUE D 1 SCALE 2:1 DATE 23 APR 2012 2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 0.20 C D A D1 B 2X 0.20 C 8 7 6 5 4X E1 E q c 1 2 3 4 A1 TOP VIEW 0.10 C A e SIDE VIEW 0.10 8X b C A B 0.05 C 4X DETAIL A 8X e/2 1 0.42 4 INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.009 0.012 0.026 BSC 0.012 0.016 0.026 0.032 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006 MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.016 0.020 0.037 0.022 0.008 0.063 12 _ 0.65 PITCH PACKAGE OUTLINE 4X 0.66 M E3 8 5 D2 BOTTOM VIEW 1 3.60 L1 GENERIC MARKING DIAGRAM* XXXXX A Y WW G MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.23 0.30 0.40 0.65 BSC 0.30 0.41 0.51 0.65 0.80 0.95 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _ SOLDERING FOOTPRINT* L G SEATING PLANE DETAIL A K E2 C 6X 0.10 C DIM A A1 b c D D1 D2 E E1 E2 E3 e G K L L1 M q XXXXX AYWWG G 0.75 2.30 0.57 0.47 2.37 3.46 DIMENSION: MILLIMETERS = Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. DOCUMENT NUMBER: DESCRIPTION: 98AON30561E WDFN8 3.3X3.3, 0.65P Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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