NVTFS5826NL Power MOSFET
Features
60 V, 24 mW, 20 A, Single N−Channel
• • • • •
Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses NV Prefix for Automotive and Other Applications Requiring AEC−Q101 Qualified Site and Change Controls These are Pb−Free Devices
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V(BR)DSS 60 V RDS(on) MAX 24 mW @ 10 V 32 mW @ 4.5 V N−Channel D (5 − 8) ID MAX 20 A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain Current RYJ−mb (Notes 1, 2, 3, 4) Power Dissipation RYJ−mb (Notes 1, 2, 3) Continuous Drain Current RqJA (Notes 1 & 3, 4) Power Dissipation RqJA (Notes 1, 3) Pulsed Drain Current Tmb = 25°C Steady State Tmb = 100°C Tmb = 25°C Tmb = 100°C TA = 25°C Steady State TA = 100°C TA = 25°C TA = 100°C TA = 25°C, tp = 10 ms IDM TJ, Tstg IS EAS PD ID PD Symbol VDSS VGS ID Value 60 ±20 20 14 22 11 7.6 5.4 3.2 1.6 127 −55 to +175 18 20 A °C A mJ W A W Unit V V A
G (4) S (1, 2, 3)
MARKING DIAGRAM
1
Operating Junction and Storage Temperature Source Current (Body Diode) Single Pulse Drain−to−Source Avalanche Energy (TJ = 25°C, VDD = 24 V, VGS = 10 V, IL(pk) = 20 A, L = 0.1 mH, RG = 25 W) Lead Temperature for Soldering Purposes (1/8″ from case for 10 s)
WDFN8 (m8FL) CASE 511AB 5826 A Y WW G
1 S S S G
5826 AYWWG G
D D D D
= Specific Device Code = Assembly Location = Year = Work Week = Pb−Free Package
TL
260
°C
(Note: Microdot may be in either location)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability.
ORDERING INFORMATION
Device NVTFS5826NLTAG Package WDFN8 (Pb−Free) WDFN8 (Pb−Free) Shipping† 1500 / Tape & Reel 5000 / Tape & Reel
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter Junction−to−Mounting Board (top) − Steady State (Note 2 and 3) Junction−to−Ambient − Steady State (Note 3) Symbol RYJ−mb RqJA Value 6.8 47 Unit °C/W
NVTFS5826NLTWG
1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi ( Y ) is used as required per JESD51 − 12 for packages in which substantially less than 100% of the heat flows to single case surface. 3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2011
January, 2011 − Rev. 0
1
Publication Order Number: NVTFS5826NL/D
NVTFS5826NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current V(BR)DSS IDSS IGSS VGS(TH) RDS(on) gFS Ciss Coss Crss QG(TOT) QG(TH) QGS QGD QG(TOT) td(on) tr td(off) tf VSD tRR ta tb QRR VGS = 0 V, dlS/dt = 100 A/ms, IS = 10 A VGS = 0 V, IS = 10 A TJ = 25°C TJ = 125°C VGS = 4.5 V, VDS = 48 V, ID = 10 A VGS = 10 V, VDS = 48 V, ID = 10 A VGS = 4.5 V, VDS = 48 V, ID = 10 A VGS = 0 V, ID = 250 mA VGS = 0 V, VDS = 60 V TJ = 25°C TJ = 125°C 60 1.0 10 "100 nA V mA Symbol Test Condition Min Typ Max Unit
Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Drain−to−Source On Resistance
VDS = 0 V, VGS = "20 V VGS = VDS, ID = 250 mA VGS = 10 V, ID = 10 A VGS = 4.5 V, ID = 10 A VDS = 15 V, ID = 5 A VGS = 0 V, f = 1.0 MHz, VDS = 25 V 1.5 19 25 8
2.5 24 32
V mW
Forward Transconductance CHARGES AND CAPACITANCES Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Threshold Gate Charge Gate−to−Source Charge Gate−to−Drain Charge Total Gate Charge
S
850 85 50 8.3 1 3 4 16
pF
nC nC
nC
SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time 9 29 14 21 ns
DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage 0.8 0.7 18 14 4 17 nC ns 1.2 V
Reverse Recovery Time Charge Time Discharge Time Reverse Recovery Charge
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures.
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NVTFS5826NL
TYPICAL CHARACTERISTICS
60 50 40 30 20 10 0 50 10 V VGS = 4.5 V TJ = 25°C ID, DRAIN CURRENT (A) 4.0 V 3.8 V 3.6 V 3.4 V 3.2 V 3.0 V 2.8 V 0 1 2 3 4 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 5 40 30 20 10 0 VDS ≥ 10 V
ID, DRAIN CURRENT (A)
TJ = 25°C TJ = 125°C TJ = −55°C
1
2 3 4 VGS, GATE−TO−SOURCE VOLTAGE (V)
5
Figure 1. On−Region Characteristics
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.050 ID = 10 A TJ = 25°C 0.040 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) 0.040
Figure 2. Transfer Characteristics
TJ = 25°C
0.030
VGS = 4.5 V
0.030
0.020
VGS = 10 V
0.020
0.010
2
4
6
8
10
0.010
5
10
15
20
25
30
35
40
VGS, GATE−TO−SOURCE VOLTAGE (V)
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source Voltage
2.40 RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 2.20 2.00 1.80 1.60 1.40 1.20 1.00 0.80 −25 0 25 50 75 100 125 TJ, JUNCTION TEMPERATURE (°C) 150 175 100 ID = 10 A VGS = 10 V IDSS, LEAKAGE (nA) 10000 100000
Figure 4. On−Resistance vs. Drain Current and Gate Voltage
VGS = 0 V
TJ = 150°C 1000 TJ = 125°C
0.60 −50
10
20 30 40 50 VDS, DRAIN−TO−SOURCE VOLTAGE (V)
60
Figure 5. On−Resistance Variation with Temperature
Figure 6. Drain−to−Source Leakage Current vs. Voltage
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NVTFS5826NL
TYPICAL CHARACTERISTICS
1200 1000 C, CAPACITANCE (pF) 800 600 400 200 0 Crss 0 Coss 10 20 30 40 50 DRAIN−TO−SOURCE VOLTAGE (V) 60 Ciss TJ = 25°C VGS, GATE−TO−SOURCE VOLTAGE (V) VGS = 0 V 10 8 6 4 2 0
QT
Qgs
Qgd VDS = 48 V ID = 10 A TJ = 25°C
0
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total Charge
40 IS, SOURCE CURRENT (A) VGS = 0 V TJ = 25°C 30
4 8 12 Qg, TOTAL GATE CHARGE (nC)
16
1000.0 VDD = 48 V ID = 10 A VGS = 4.5 V t, TIME (ns) 100.0 td(off) tr 10.0 tf td(on)
20
10
1.0
1
Figure 9. Resistive Switching Time Variation vs. Gate Resistance
EAS, SINGLE PULSE DRAIN−TO− SOURCE AVALANCHE ENERGY (mJ) 1000 VGS = 10 V Single Pulse TC = 25°C 10 ms 20
10 RG, GATE RESISTANCE (W)
100
0 0.5
Figure 10. Diode Forward Voltage vs. Current
0.6 0.7 0.8 0.9 VSD, SOURCE−TO−DRAIN VOLTAGE (V)
1.0
ID = 20 A 15
ID, DRAIN CURRENT (A)
100
100 ms 10 ms 1 ms
10
10
1
RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 VDS, DRAIN−TO−SOURCE VOLTAGE (V)
5
dc
0.1
100
0 25
50 75 100 125 150 TJ, STARTING JUNCTION TEMPERATURE (°C)
175
Figure 11. Maximum Rated Forward Biased Safe Operating Area
Figure 12. Maximum Avalanche Energy vs. Starting Junction Temperature
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NVTFS5826NL
TYPICAL CHARACTERISTICS
100 RqJA(t) (°C/W) EFFECTIVE TRANSIENT THERMAL RESISTANCE Duty Cycle = 0.5 10 0.2 0.1 0.05 0.02 0.01
1
0.1
Single Pulse
0.01 0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Figure 13. Thermal Response
PULSE TIME (sec)
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NVTFS5826NL
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P CASE 511AB−01 ISSUE B
2X NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH PROTRUSIONS OR GATE BURRS. 2X
0.20 C D D1
8765
A
B
0.20 C E1 E
4X
q
1234
TOP VIEW 0.10 C A 0.10 C SIDE VIEW
8X b CAB
c
A1
6X
C
SEATING PLANE
e
DETAIL A
DETAIL A
DIM A A1 b c D D1 D2 E E1 E2 e G K L L1 M q
MILLIMETERS MIN NOM MAX 0.70 0.75 0.80 0.00 −−− 0.05 0.23 0.30 0.40 0.15 0.20 0.25 3.30 BSC 2.95 3.05 3.15 1.98 2.11 2.24 3.30 BSC 2.95 3.05 3.15 1.47 1.60 1.73 0.65 BSC 0.30 0.41 0.51 0.64 −−− −−− 0.30 0.43 0.56 0.06 0.13 0.20 1.40 1.50 1.60 0_ −−− 12 _
INCHES NOM 0.030 −−− 0.012 0.008 0.130 BSC 0.116 0.120 0.078 0.083 0.130 BSC 0.116 0.120 0.058 0.063 0.026 BSC 0.012 0.016 0.025 −−− 0.012 0.017 0.002 0.005 0.055 0.059 0_ −−− MIN 0.028 0.000 0.009 0.006
MAX 0.031 0.002 0.016 0.010 0.124 0.088 0.124 0.068 0.020 −−− 0.022 0.008 0.063 12 _
SOLDERING FOOTPRINT*
e/2
1 4
0.10 0.05
c
L
0.42 K
PACKAGE OUTLINE
8X
0.65 PITCH
0.66
4X
E2
8 5
M D2 BOTTOM VIEW L1 0.75 0.57 2.30 3.60
G
0.47
2.37 3.46
DIMENSION: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
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NVTFS5826NL/D