NVTFS002N04C
MOSFET – Power, Single
N-Channel
40 V, 2.4 mW, 136 A
Features
•
•
•
•
•
•
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Small Footprint (3.3 x 3.3 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
NVTFWS002N04C − Wettable Flanks Product
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free and are RoHS Compliant
V(BR)DSS
RDS(on) MAX
ID MAX
40 V
2.4 mW @ 10 V
136 A
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Parameter
N−Channel
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage
VGS
±20
V
ID
136
A
Continuous Drain
Current RqJC
(Notes 1, 2, 3, 4)
TC = 25°C
Power Dissipation
RqJC (Notes 1, 2, 3)
Continuous Drain
Current RqJA
(Notes 1, 3, 4)
Steady
State
TC = 100°C
TC = 25°C
Power Dissipation
RqJA (Notes 1, 3)
Pulsed Drain Current
Steady
State
PD
27
ID
19
PD
1
W
3.2
1.6
IDM
676
A
TJ, Tstg
−55 to
+175
°C
IS
70.4
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 10.2 A)
EAS
268
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
MARKING DIAGRAM
A
27
TA = 100°C
TA = 25°C, tp = 10 ms
S (1, 2, 3)
W
85
TA = 100°C
TA = 25°C
G (4)
77
TC = 100°C
TA = 25°C
D (5 − 8)
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
WDFN8
(m8FL)
CASE 511DY
1
S
S
S
G
XXXX
AYWWG
G
D
D
D
D
XXXX = Specific Device Code
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Parameter
Symbol
Value
Unit
Junction−to−Case − Steady State (Note 3)
RqJC
1.8
°C/W
Junction−to−Ambient − Steady State (Note 3)
RqJA
46.5
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Psi (Y) is used as required per JESD51−12 for packages in which
substantially less than 100% of the heat flows to single case surface.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
© Semiconductor Components Industries, LLC, 2019
July, 2019 − Rev. 0
1
Publication Order Number:
NVTFS002N04C/D
NVTFS002N04C
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
VGS = 0 V,
VDS = 40 V
V
TJ = 25°C
10
TJ = 125°C
250
100
mA
IGSS
VDS = 0 V, VGS = 20 V
nA
Gate Threshold Voltage
VGS(TH)
VGS = VDS, ID = 90 mA
Drain−to−Source On Resistance
RDS(on)
VGS = 10 V, ID = 50 A
2.0
gFS
VDS = 15 V, ID = 50 A
92
S
2250
pF
ON CHARACTERISTICS (Note 5)
Forward Transconductance
2.5
3.5
V
2.4
mW
CHARGES AND CAPACITANCES
Ciss
Input Capacitance
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Total Gate Charge
QG(TOT)
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
1230
41
nC
6.7
VGS = 10 V, VDS = 20 V, ID = 50 A
11.4
5.7
VGS = 10 V, VDS = 20 V, ID = 50 A
34
nC
11
ns
SWITCHING CHARACTERISTICS (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(on)
tr
td(off)
VGS = 10 V, VDS = 32 V,
ID = 50 A
tf
77
23
7
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
VGS = 0 V,
IS = 50 A
TJ = 25°C
0.84
TJ = 125°C
0.72
tRR
50
Charge Time
ta
25
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, dlS/dt = 100 A/ms,
IS = 50 A
QRR
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2
V
ns
25
50
5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
6. Switching characteristics are independent of operating junction temperatures.
1.2
nC
NVTFS002N04C
TYPICAL CHARACTERISTICS
210
VGS = 10 V to 6.6 V
210
6.2 V
ID, DRAIN CURRENT (A)
5.6 V
120
5.4 V
90
5.2 V
30
5.0 V
4.8 V
4.6 V
0
4.4 V
60
0
2
1
150
120
90
TJ = 25°C
60
30
0
3
TJ = 125°C
0
7
8
130
150
6
Figure 2. Transfer Characteristics
TJ = 25°C
ID = 50 A
3.0
2.5
2.0
1.5
5
7
6
8
10
9
VGS, GATE−TO−SOURCE VOLTAGE (V)
4.0
3.5
TJ = 25°C
3.0
2.5
VGS = 10 V
2.0
1.5
1.0
0.5
0
10
30
50
70
90
110
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
100K
2.0
VGS = 10 V
ID = 50 A
TJ = 175°C
TJ = 150°C
10K
IDSS, LEAKAGE (nA)
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
5
Figure 1. On−Region Characteristics
3.5
1.6
TJ = −55°C
4
3
VGS, GATE−TO−SOURCE VOLTAGE (V)
4.0
1.8
2
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
ID, DRAIN CURRENT (A)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
5.8 V
150
1.0
VDS = 10 V
180
180
1.4
1.2
1.0
0.8
TJ = 125°C
1K
TJ = 85°C
100
10
TJ = 25°C
0.6
0.4
−50 −25
0
25
50
75
100
125
150
175
1
5
10
15
20
25
30
35
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NVTFS002N04C
TYPICAL CHARACTERISTICS
VGS, GATE−TO−SOURCE VOLTAGE (V)
10K
C, CAPACITANCE (pF)
CISS
COSS
1K
100
CRSS
10
1
VGS = 0 V
TJ = 25°C
f = 1 MHz
5
0
10
15
20
25
30
35
40
10
9
8
7
QGS
6
QGD
5
4
3
VDS = 20 V
TJ = 25°C
ID = 50 A
2
1
0
5
0
10
15
20
25
30
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
35
100
tr
100
t, TIME (ns)
IS, SOURCE CURRENT (A)
VGS = 0 V
td(off)
td(on)
10
1
tf
VGS = 10 V
VDS = 32 V
ID = 50 A
1
10
1
TJ = 125°C
0.1
100
0.4
0.5
0.6
0.8
0.9
1.0
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
TJ(initial) = 25°C
RDS(on) Limit
Thermal Limit
Package Limit
0.1
1
10
IPEAK (A)
TC = 25°C
Single Pulse
VGS ≤ 10 V
1
0.1
0.7
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
100
10
TJ = −55°C
TJ = 25°C
0.3
RG, GATE RESISTANCE (W)
1000
ID, DRAIN CURRENT(A)
10
10 ms
0.5 ms
1 ms
10 ms
100
1000
10
TJ(initial) = 100°C
1
0.00001
0.0001
0.001
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
0.01
NVTFS002N04C
TYPICAL CHARACTERISTICS
100
R(t) (°C/W)
Duty Cycle = 0.5
0.2
10
0.1
0.05
1
0.02
0.01
0.1
0.01
Single Pulse
0.000001
0.00001
0.0001
0.001
0.1
0.01
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Marking
Package
Shipping†
NVTFS002N04CTAG
02NC
WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFWS002N04CTAG
02NW
WDFN8
(Pb−Free, Wettable Flanks)
1500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511DY
ISSUE A
DATE 21 AUG 2018
GENERIC
MARKING DIAGRAM*
XXXX
AYWW
XXXX
A
Y
WW
= Specific Device Code
= Assembly Location
= Year Code
= Work Week Code
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present. Some products
may not follow the Generic Marking.
DOCUMENT NUMBER:
DESCRIPTION:
98AON90827G
WDFN8 3.3x3.3, 0.65P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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