DATA SHEET
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MOSFET – Power, Single,
P-Channel
V(BR)DSS
RDS(on) MAX
ID MAX
13.8 mW @ −10 V
−40 V
18.7 mW @ −4.5 V
-40 V, 13.8 mW, -49 A
NVTFS014P04M8L
−49 A
P−Channel MOSFET
D (5−8)
Features
Small Footprint (3.3 x 3.3 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low Capacitance to Minimize Driver Losses
NVTFWS014P04M8L − Wettable Flanks Product
AEC−Q101 Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR−Free and are RoHS
Compliant
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Parameter
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current RqJC
(Notes 1, 2, 4)
TC = 25C
Power Dissipation
RqJC (Notes 1, 2)
Continuous Drain
Current RqJA
(Notes 1, 3, 4)
Steady
State
TC = 25C
Power Dissipation
RqJA (Notes 1, 3)
Pulsed Drain Current
Value
Unit
VDSS
−40
V
VGS
20
V
ID
−49
A
Steady
State
PD
30
ID
−11.3
Operating Junction and Storage Temperature
Range
Source Current (Body Diode)
A
−8
PD
3.2
IDM
224
A
TJ, Tstg
−55 to
+175
C
TA = 100C
TA = 25C, tp = 10 ms
WDFN8
(m8FL)
CASE 511AB
1
S
S
S
G
XXXX
AYWWG
G
D
D
D
D
W
61
TA = 100C
TA = 25C
MARKING DIAGRAMS
−35
TC = 100C
TA = 25C
S (1,2,3)
1
Symbol
TC = 100C
G (4)
W
1.6
IS
−50
A
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = −6.1 A)
EAS
143
mJ
Lead Temperature for Soldering Purposes
(1/8 from case for 10 s)
TL
260
C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
WDFNW8
(Full−Cut m8FL WF)
CASE 515AN
XXXX
A
Y
WW
G
XXXX
AYWWG
G
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
See detailed ordering, marking and shipping information on
page 5 of this data sheet.
THERMAL RESISTANCE MAXIMUM RATINGS (Note 1)
Symbol
Value
Unit
Junction−to−Case − Steady State (Drain)
(Notes 1, 2, 4)
Parameter
RqJC
2.5
C/W
Junction−to−Ambient − Steady State (Note 3)
RqJA
47
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Assumes heat−sink sufficiently large to maintain constant case temperature
independent of device power.
3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
4. Continuous DC current rating. Maximum current for pulses as long as 1
second is higher but is dependent on pulse duration and duty cycle.
Semiconductor Components Industries, LLC, 2017
September, 2022 − Rev. 5
1
Publication Order Number:
NVTFS014P04M8L/D
NVTFS014P04M8L
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = −250 mA
−40
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
Gate−to−Source Leakage Current
V
21
IDSS
VGS = 0 V,
VDS = −40 V
mV/C
TJ = 25C
−1.0
TJ = 125C
−1000
IGSS
VDS = 0 V, VGS = "20 V
VGS(TH)
VGS = VDS, ID = −420 mA
mA
"100
nA
−2.4
V
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
Forward Transconductance
−1.0
5.1
gFS
mV/C
VGS = −10 V, ID = −15 A
10
13.8
mW
VGS = −4.5 V, ID = −7.5 A
14.6
18.7
VDS = −1.5 V, ID = −15 A
42
S
1734
pF
CHARGES AND CAPACITANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
Plateau Voltage
VGP
VGS = 0 V, f = 1.0 MHz,
VDS = −20 V
VDS = −20 V,
ID = −20 A
682
32
VGS = −4.5V
12.5
VGS = −10V
26.5
nC
nC
2.6
VGS = −10 V, VDS = −20 V,
ID = −30 A
5.6
3.8
3.2
V
td(on)
11.5
ns
tr
97.4
SWITCHING CHARACTERISTICS, VGS = −4.5 V (Note 6)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(off)
VGS = −4.5 V, VDS = −20 V,
ID = −30 A, RG = 2.5 W
tf
44.5
38.2
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
VGS = 0 V,
IS = −15 A
TJ = 25C
−0.86
TJ = 125C
−0.74
tRR
34.9
Charge Time
ta
15.8
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V, dIS/dt = 100 A/ms,
IS = −10 A
QRR
−1.25
V
ns
19.1
16.3
52
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
5. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%.
6. Switching characteristics are independent of operating junction temperatures.
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2
NVTFS014P04M8L
TYPICAL CHARACTERISTICS
80
VGS = 4.0 V
60
VGS = 3.6 V
40
VGS = 3.2 V
20
.
1.0
1.5
2.0
60
40
2.5
3.0
TJ = −55C
TJ = 25C
TJ = 125C
20
VGS = 2.8 V
VGS = 2.6 V
VGS = 2.4 V
3.5 4.0 4.5 5.0
0
0
1
2
3
4
5
6
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
−VGS, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
32
TJ = 25C
ID = −15 A
28
24
20
16
12
8
2
80
3
4
5
6
7
8
9
10
RDS(ON), DRAIN−TO−SOURCE RESISTANCE
(mW)
RDS(ON), DRAIN−TO−SOURCE RESISTANCE
(mW)
0.5
100
−ID, DRAIN CURRENT (A)
VGS = 4.5 V
4
VDS = −3 V
VGS = 4.8 V
100
0
0.0
RDS(ON), NORMALIZED DRAIN−TO−SOURCE
RESISTANCE
120
VGS = 5.5 V to 10 V
40
30
20
VGS = −4.5 V
10
VGS = −10 V
0
VGS, GATE−TO−SOURCE VOLTAGE (V)
21
31
41
51
61
−ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.5
2
VGS = −10 V
ID = −15 A
11
71
81
TJ = 25C
TJ = 85C
TJ = 125C
TJ = 150C
TJ = 175C
1,E−05
1.5
1
0.5
0
−50
1
1,E−04
−IDSS, LEAKAGE (A)
−ID, DRAIN CURRENT (A)
120
1,E−06
1,E−07
1,E−08
1,E−09
−25
0
25
50
75
100
125
150
1,E−10
0
175
TJ, JUNCTION TEMPERATURE (C)
5
10
15
20
25
30
35
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
40
NVTFS014P04M8L
C, CAPACITANCE (pF)
1,E+04
VGS = −0 V
TJ = 25C
f = 1 MHz
CISS
1,E+03
COSS
CRSS
1,E+02
CISS
COSS
CRSS
1,E+01
0,1
1
10
−VDS, DRAIN−TO−SOURCE VOLTAGE (V)
100
−VGS, GATE−TO−SOURCE VOLTAGE (V)
TYPICAL CHARACTERISTICS (continued)
10
9 VDS = −20 V
ID = −30 A
8 T = 25C
J
7
6
5
4
2
1
0
0
Figure 7. Capacitance Variation
IS, SOURCE CURRENT (A)
t, TIME (ns)
VGS = −4.5 V
VDS = −20 V
ID = −30 A
100
10
td(on)
tr
td(off)
tf
10
RG, GATE RESISTANCE (W)
25
30
TJ = −55C
TJ = 25C
TJ = 125C
20
10
0
0.2
0.4
0.6
0.8
1
1.2
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 10. Diode Forward Voltage vs. Current
100
VGS 10 V
SINGLE PULSE
TC = 25C
10
IPEAK (A)
ID, DRAIN CURRENT (A)
20
30
0
100
1000
10 ms
0.5 ms
1 ms
10 ms
1
0.1
15
VGS = 0 V
40
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
100
10
Figure 8. Gate−to−Source vs. Total Charge
50
1
5
QG, TOTAL GATE CHARGE (nC)
1000
1
QGD
QGS
3
RDS(on) LIMIT
THERMAL LIMIT
PACKAGE LIMIT
0.1
1
10
TJ (initial) = 25C
10
TJ (initial) = 100C
100
1000
1
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
0.0001
0.001
0.01
TIME IN AVALANCHE (s)
Figure 11. Maximum Rated Forward Biased
Dafe operating Area
Figure 12. Maximum Drain Current vs. Time in
Avalanche
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4
NVTFS014P04M8L
TYPICAL CHARACTERISTICS (continued)
100
R(t) (C/W)
10
Single Pulse
Duty Cycle 1%
2%
5%
10%
20%
50%
1
0.1
0.01
0.000001 0.00001 0.0001 0.001 0.01
0.1
1
10
100
1000
Time (s)
Figure 13. Thermal Response
DEVICE ORDERING INFORMATION
Marking
Package
Shipping†
NVTFS014P04M8LTAG
014M
WDFN8
(Pb−Free)
1500 / Tape & Reel
NVTFWS014P04M8LTAG
014W
WDFNW8
(Pb−Free, Wettable Flank)
1500 / Tape & Reel
Device
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFN8 3.3x3.3, 0.65P
CASE 511AB
ISSUE D
1
SCALE 2:1
DATE 23 APR 2012
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSION D1 AND E1 DO NOT INCLUDE MOLD FLASH
PROTRUSIONS OR GATE BURRS.
0.20 C
D
A
D1
B
2X
0.20 C
8 7 6 5
4X
E1 E
q
c
1 2 3 4
A1
TOP VIEW
0.10 C
A
e
SIDE VIEW
0.10
8X b
C A B
0.05
C
4X
DETAIL A
8X
e/2
1
0.42
4
INCHES
NOM
0.030
−−−
0.012
0.008
0.130 BSC
0.116
0.120
0.078
0.083
0.130 BSC
0.116
0.120
0.058
0.063
0.009
0.012
0.026 BSC
0.012
0.016
0.026
0.032
0.012
0.017
0.002
0.005
0.055
0.059
0_
−−−
MIN
0.028
0.000
0.009
0.006
MAX
0.031
0.002
0.016
0.010
0.124
0.088
0.124
0.068
0.016
0.020
0.037
0.022
0.008
0.063
12 _
0.65
PITCH
PACKAGE
OUTLINE
4X
0.66
M
E3
8
5
D2
BOTTOM VIEW
1
3.60
L1
GENERIC
MARKING DIAGRAM*
XXXXX
A
Y
WW
G
MILLIMETERS
MIN
NOM
MAX
0.70
0.75
0.80
0.00
−−−
0.05
0.23
0.30
0.40
0.15
0.20
0.25
3.30 BSC
2.95
3.05
3.15
1.98
2.11
2.24
3.30 BSC
2.95
3.05
3.15
1.47
1.60
1.73
0.23
0.30
0.40
0.65 BSC
0.30
0.41
0.51
0.65
0.80
0.95
0.30
0.43
0.56
0.06
0.13
0.20
1.40
1.50
1.60
0_
−−−
12 _
SOLDERING FOOTPRINT*
L
G
SEATING
PLANE
DETAIL A
K
E2
C
6X
0.10 C
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
E3
e
G
K
L
L1
M
q
XXXXX
AYWWG
G
0.75
2.30
0.57
0.47
2.37
3.46
DIMENSION: MILLIMETERS
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
*This information is generic. Please refer
to device data sheet for actual part
marking.
Pb−Free indicator, “G” or microdot “ G”,
may or may not be present.
DOCUMENT NUMBER:
DESCRIPTION:
98AON30561E
WDFN8 3.3X3.3, 0.65P
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
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ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL WF)
CASE 515AN
ISSUE O
GENERIC
MARKING DIAGRAM*
XXXX
AYWWG
G
DOCUMENT NUMBER:
DESCRIPTION:
DATE 25 AUG 2020
XXXX = Specific Device Code
*This information is generic. Please refer to
A
= Assembly Location
device data sheet for actual part marking.
Y
= Year
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
WW = Work Week
not follow the Generic Marking.
G
= Pb−Free Package
(Note: Microdot may be in either location)
98AON24556H
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
WDFNW8 3.3x3.3, 0.65P (Full−Cut m8FL WF)
PAGE 1 OF 1
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2018
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