NTJD4001N, NVTJD4001N
MOSFET – Dual, N-Channel,
Small Signal, SC-88
30 V, 250 mA
Features
•
•
•
•
•
www.onsemi.com
Low Gate Charge for Fast Switching
Small Footprint − 30% Smaller than TSOP−6
ESD Protected Gate
AEC Q101 Qualified − NVTJD4001N
These Devices are Pb−Free and are RoHS Compliant
V(BR)DSS
RDS(on) TYP
ID Max
1.0 W @ 4.0 V
30 V
250 mA
1.5 W @ 2.5 V
Applications
•
•
•
•
Low Side Load Switch
Li−Ion Battery Supplied Devices − Cell Phones, PDAs, DSC
Buck Converters
Level Shifts
SOT−363
SC−88 (6 LEADS)
MAXIMUM RATINGS (TJ = 25°C unless otherwise stated)
Symbol
Value
Units
Drain−to−Source Voltage
VDSS
30
V
Gate−to−Source Voltage
VGS
±20
V
ID
250
mA
Parameter
Continuous Drain
Current (Note 1)
Steady
State
TA = 25 °C
Power Dissipation
(Note 1)
Steady
State
TA = 25 °C
PD
272
mW
t =10 ms
IDM
600
mA
TJ, TSTG
−55 to
150
°C
Pulsed Drain Current
TA = 85 °C
Operating Junction and Storage Temperature
1
6
D1
G1
2
5
G2
D2
3
4
S2
Top View
180
Source Current (Body Diode)
IS
250
mA
Lead Temperature for Soldering Purposes
(1/8” from case for 10 s)
TL
260
°C
MARKING DIAGRAM &
PIN ASSIGNMENT
D1 G2 S2
6
1
SOT−363
CASE 419B
STYLE 26
TE M G
G
1
S1 G1 D2
THERMAL RESISTANCE RATINGS (Note 1)
Symbol
Value
Unit
Junction−to−Ambient − Steady State
RqJA
458
°C/W
Junction−to−Lead − Steady State
RqJL
252
Parameter
S1
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. Surface mounted on FR4 board using min pad size
(Cu area = 0.155 in sq [1 oz] including traces).
TE
= Device Code
M
= Date Code
G
= Pb−Free Package
(Note: Microdot may be in either location)
ORDERING INFORMATION
Package
Shipping†
NTJD4001NT1G
SOT−363
(Pb−Free)
3000 / Tape &
Reel
NVTJD4001NT1G
SOT−363
(Pb−Free)
3000 / Tape &
Reel
Device
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
© Semiconductor Components Industries, LLC, 2015
May, 2019− Rev. 7
1
Publication Order Number:
NTJD4001N/D
NTJD4001N, NVTJD4001N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise stated)
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 100 mA
30
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
Parameter
Typ
Max
Unit
OFF CHARACTERISTICS
V
56
mV/ °C
Zero Gate Voltage Drain Current
IDSS
VGS = 0 V, VDS = 30 V
1.0
mA
Gate−to−Source Leakage Current
IGSS
VDS = 0 V, VGS = ±10 V
±1.0
mA
VGS(TH)
VGS = VDS, ID = 100 mA
1.5
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Gate Threshold Temperature
Coefficient
Drain−to−Source On Resistance
VGS(TH)/TJ
RDS(on)
0.8
1.2
−3.2
mV/ °C
VGS = 4.0 V, ID = 10 mA
1.0
1.5
VGS = 2.5 V, ID = 10 mA
1.5
2.5
gFS
VDS = 3.0 V, ID = 10 mA
80
Input Capacitance
CISS
33
COSS
VGS = 0 V, f = 1.0 MHz,
VDS = 5.0 V
20
Output Capacitance
19
32
Reverse Transfer Capacitance
CRSS
7.25
12
0.9
1.3
Forward Transconductance
W
mS
CHARGES AND CAPACITANCES
VGS = 5.0 V, VDS = 24 V,
ID = 0.1 A
Total Gate Charge
QG(TOT)
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
0.3
Gate−to−Drain Charge
QGD
0.2
pF
nC
0.2
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
td(ON)
tr
VGS = 4.5 V, VDD = 5.0 V,
ID = 10 mA, RG = 50 W
ns
17
23
td(OFF)
94
tf
82
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
tRR
VGS = 0 V,
IS = 10 mA
TJ = 25°C
0.65
TJ = 125°C
0.45
VGS = 0 V, dIS/dt = 8.0 A/ms,
IS = 10 mA
12.4
0.7
V
ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
www.onsemi.com
2
NTJD4001N, NVTJD4001N
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
VGS = 10 V to 3 V
0.16
2.5 V
0.14
2.25 V
0.12
0.1
0.08
2V
0.06
0.04
1.75 V
1.5 V
0.02
1.25
0.4
0.8
1.2
1.6
VDS = 5 V
ID, DRAIN CURRENT (AMPS)
VGS = 2.75 V
0
0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0.1
TJ = 25°C
0.08
0.06
TJ = 125°C
0.04
25°C
0.02
TJ = −55°C
0
2
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1.2
1.4
1.6
2
1.8
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
VGS = 10 V
TJ = 125°C
1.0
0.75
TJ = 25°C
0.5
TJ = −55°C
0.25
0.005
0.055
0.105
0.155
ID, DRAIN CURRENT (AMPS)
0.205
1
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
ID, DRAIN CURRENT (AMPS)
0.2
0.18
1.25
VGS = 4.5 V
0.75
1.6
VGS = 10 V
0.5
0.25
0.005
0.055
0.105
0.155
ID, DRAIN CURRENT (AMPS)
10000
ID = 0.01 A
VGS = 10 V
VGS = 0 V
1.4
1000
1.2
1
0.8
0.6
TJ = 150°C
100
0.4
TJ = 125°C
0.2
0
−50
0.205
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE
RESISTANCE (NORMALIZED)
1.8
TJ = 25°C
1.0
Figure 3. On−Resistance vs. Drain Current and
Temperature
2
2.2
−25
0
25
50
75
100
125
150
10
0
TJ, JUNCTION TEMPERATURE (°C)
5
10
15
20
25
VDS, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
30
NTJD4001N, NVTJD4001N
C, CAPACITANCE (pF)
50
VDS = 0 V
40
Ciss
30
Crss
VGS, GATE−TO−SOURCE VOLTAGE (VOLTS)
TYPICAL PERFORMANCE CURVES (TJ = 25°C unless otherwise noted)
TJ = 25°C
VGS = 0 V
20
Ciss
Coss
10
Crss
0
10
5
VGS
0
VDS
5
10
15
20
25
5
QG
4
3
QGS
QGD
2
1
0
ID = 0.1 A
TJ = 25°C
0.4
0.8
0.2
0.6
QG, TOTAL GATE CHARGE (nC)
0
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
Figure 8. Gate−to−Source Voltage vs. Total
Gate Charge
Figure 7. Capacitance Variation
IS, SOURCE CURRENT (AMPS)
0.1
0.08
VGS = 0 V
TJ = 25°C
0.06
0.04
0.02
0
0.5
0.55
0.6
0.65
0.7
0.75
VSD, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
r(t), EFFECTIVE TRANSIENT THERMAL RESPONSE
Figure 9. Diode Forward Voltage vs. Current
1000
D = 0.5
100
0.2
0.1
0.05
10
0.02
0.01
1
0.000001
SINGLE PULSE
0.00001
0.0001
0.001
0.01
0.1
PULSE TIME t,(s)
Figure 10. Thermal Response
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4
1
10
100
1000
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
1
SCALE 2:1
DATE 11 DEC 2012
2X
aaa H D
D
H
A
D
6
5
GAGE
PLANE
4
1
2
L
L2
E1
E
DETAIL A
3
aaa C
2X
bbb H D
2X 3 TIPS
e
B
6X
b
ddd
TOP VIEW
C A-B D
M
A2
DETAIL A
A
6X
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETERS.
3. DIMENSIONS D AND E1 DO NOT INCLUDE MOLD FLASH,
PROTRUSIONS, OR GATE BURRS. MOLD FLASH, PROTRUSIONS, OR GATE BURRS SHALL NOT EXCEED 0.20 PER END.
4. DIMENSIONS D AND E1 AT THE OUTERMOST EXTREMES OF
THE PLASTIC BODY AND DATUM H.
5. DATUMS A AND B ARE DETERMINED AT DATUM H.
6. DIMENSIONS b AND c APPLY TO THE FLAT SECTION OF THE
LEAD BETWEEN 0.08 AND 0.15 FROM THE TIP.
7. DIMENSION b DOES NOT INCLUDE DAMBAR PROTRUSION.
ALLOWABLE DAMBAR PROTRUSION SHALL BE 0.08 TOTAL IN
EXCESS OF DIMENSION b AT MAXIMUM MATERIAL CONDITION. THE DAMBAR CANNOT BE LOCATED ON THE LOWER
RADIUS OF THE FOOT.
ccc C
A1
SIDE VIEW
C
SEATING
PLANE
END VIEW
c
RECOMMENDED
SOLDERING FOOTPRINT*
6X
DIM
A
A1
A2
b
C
D
E
E1
e
L
L2
aaa
bbb
ccc
ddd
MILLIMETERS
MIN
NOM MAX
−−−
−−−
1.10
0.00
−−−
0.10
0.70
0.90
1.00
0.15
0.20
0.25
0.08
0.15
0.22
1.80
2.00
2.20
2.00
2.10
2.20
1.15
1.25
1.35
0.65 BSC
0.26
0.36
0.46
0.15 BSC
0.15
0.30
0.10
0.10
GENERIC
MARKING DIAGRAM*
6
XXXMG
G
6X
0.30
INCHES
NOM MAX
−−− 0.043
−−− 0.004
0.035 0.039
0.008 0.010
0.006 0.009
0.078 0.086
0.082 0.086
0.049 0.053
0.026 BSC
0.010 0.014 0.018
0.006 BSC
0.006
0.012
0.004
0.004
MIN
−−−
0.000
0.027
0.006
0.003
0.070
0.078
0.045
0.66
1
2.50
0.65
PITCH
XXX = Specific Device Code
M
= Date Code*
G
= Pb−Free Package
(Note: Microdot may be in either location)
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
*Date Code orientation and/or position may
vary depending upon manufacturing location.
*This information is generic. Please refer to
device data sheet for actual part marking.
Pb−Free indicator, “G” or microdot “G”, may
or may not be present. Some products may
not follow the Generic Marking.
STYLES ON PAGE 2
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC−88/SC70−6/SOT−363
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 1 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
SC−88/SC70−6/SOT−363
CASE 419B−02
ISSUE Y
DATE 11 DEC 2012
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
STYLE 2:
CANCELLED
STYLE 3:
CANCELLED
STYLE 4:
PIN 1. CATHODE
2. CATHODE
3. COLLECTOR
4. EMITTER
5. BASE
6. ANODE
STYLE 5:
PIN 1. ANODE
2. ANODE
3. COLLECTOR
4. EMITTER
5. BASE
6. CATHODE
STYLE 6:
PIN 1. ANODE 2
2. N/C
3. CATHODE 1
4. ANODE 1
5. N/C
6. CATHODE 2
STYLE 7:
PIN 1. SOURCE 2
2. DRAIN 2
3. GATE 1
4. SOURCE 1
5. DRAIN 1
6. GATE 2
STYLE 8:
CANCELLED
STYLE 9:
PIN 1. EMITTER 2
2. EMITTER 1
3. COLLECTOR 1
4. BASE 1
5. BASE 2
6. COLLECTOR 2
STYLE 10:
PIN 1. SOURCE 2
2. SOURCE 1
3. GATE 1
4. DRAIN 1
5. DRAIN 2
6. GATE 2
STYLE 11:
PIN 1. CATHODE 2
2. CATHODE 2
3. ANODE 1
4. CATHODE 1
5. CATHODE 1
6. ANODE 2
STYLE 12:
PIN 1. ANODE 2
2. ANODE 2
3. CATHODE 1
4. ANODE 1
5. ANODE 1
6. CATHODE 2
STYLE 13:
PIN 1. ANODE
2. N/C
3. COLLECTOR
4. EMITTER
5. BASE
6. CATHODE
STYLE 14:
PIN 1. VREF
2. GND
3. GND
4. IOUT
5. VEN
6. VCC
STYLE 15:
PIN 1. ANODE 1
2. ANODE 2
3. ANODE 3
4. CATHODE 3
5. CATHODE 2
6. CATHODE 1
STYLE 16:
PIN 1. BASE 1
2. EMITTER 2
3. COLLECTOR 2
4. BASE 2
5. EMITTER 1
6. COLLECTOR 1
STYLE 17:
PIN 1. BASE 1
2. EMITTER 1
3. COLLECTOR 2
4. BASE 2
5. EMITTER 2
6. COLLECTOR 1
STYLE 18:
PIN 1. VIN1
2. VCC
3. VOUT2
4. VIN2
5. GND
6. VOUT1
STYLE 19:
PIN 1. I OUT
2. GND
3. GND
4. V CC
5. V EN
6. V REF
STYLE 20:
PIN 1. COLLECTOR
2. COLLECTOR
3. BASE
4. EMITTER
5. COLLECTOR
6. COLLECTOR
STYLE 21:
PIN 1. ANODE 1
2. N/C
3. ANODE 2
4. CATHODE 2
5. N/C
6. CATHODE 1
STYLE 22:
PIN 1. D1 (i)
2. GND
3. D2 (i)
4. D2 (c)
5. VBUS
6. D1 (c)
STYLE 23:
PIN 1. Vn
2. CH1
3. Vp
4. N/C
5. CH2
6. N/C
STYLE 24:
PIN 1. CATHODE
2. ANODE
3. CATHODE
4. CATHODE
5. CATHODE
6. CATHODE
STYLE 25:
PIN 1. BASE 1
2. CATHODE
3. COLLECTOR 2
4. BASE 2
5. EMITTER
6. COLLECTOR 1
STYLE 26:
PIN 1. SOURCE 1
2. GATE 1
3. DRAIN 2
4. SOURCE 2
5. GATE 2
6. DRAIN 1
STYLE 27:
PIN 1. BASE 2
2. BASE 1
3. COLLECTOR 1
4. EMITTER 1
5. EMITTER 2
6. COLLECTOR 2
STYLE 28:
PIN 1. DRAIN
2. DRAIN
3. GATE
4. SOURCE
5. DRAIN
6. DRAIN
STYLE 29:
PIN 1. ANODE
2. ANODE
3. COLLECTOR
4. EMITTER
5. BASE/ANODE
6. CATHODE
STYLE 30:
PIN 1. SOURCE 1
2. DRAIN 2
3. DRAIN 2
4. SOURCE 2
5. GATE 1
6. DRAIN 1
Note: Please refer to datasheet for
style callout. If style type is not called
out in the datasheet refer to the device
datasheet pinout or pin assignment.
DOCUMENT NUMBER:
DESCRIPTION:
98ASB42985B
SC−88/SC70−6/SOT−363
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
PAGE 2 OF 2
ON Semiconductor and
are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding
the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically
disclaims any and all liability, including without limitation special, consequential or incidental damages. ON Semiconductor does not convey any license under its patent rights nor the
rights of others.
© Semiconductor Components Industries, LLC, 2019
www.onsemi.com
onsemi,
, and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates
and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property.
A listing of onsemi’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. onsemi reserves the right to make changes at any time to any
products or information herein, without notice. The information herein is provided “as−is” and onsemi makes no warranty, representation or guarantee regarding the accuracy of the
information, product features, availability, functionality, or suitability of its products for any particular purpose, nor does onsemi assume any liability arising out of the application or use
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vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. onsemi does not convey any license
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