NVTYS004N04CLTWG

ON Semiconductor Is Now To learn more about onsemi™, please visit our website at www.onsemi.com onsemi and       and other names, marks, and brands are registered and/or common law trademarks of Semiconductor Components Industries, LLC dba “onsemi” or its affiliates and/or subsidiaries in the United States and/or other countries. onsemi owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of onsemi product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. onsemi reserves the right to make changes at any time to any products or information herein, without notice. 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Should Buyer purchase or use onsemi products for any such unintended or unauthorized application, Buyer shall indemnify and hold onsemi and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that onsemi was negligent regarding the design or manufacture of the part. onsemi is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. Other names and brands may be claimed as the property of others. MOSFET - Power, Single N-Channel 40 V, 4.3 mW, 85 A NVTYS004N04CL Features • • • • • Small Footprint (3.3 x 3.3 mm) for Compact Design Low RDS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses AEC−Q101 Qualified and PPAP Capable These Devices are Pb−Free and are RoHS Compliant www.onsemi.com V(BR)DSS Symbol Value Unit Drain−to−Source Voltage VDSS 40 V Gate−to−Source Voltage VGS ±20 V ID 84 A Continuous Drain Current RqJC (Notes 1, 2, 3, 4) TC = 25°C Power Dissipation RqJC (Notes 1, 2, 3) Continuous Drain Current RqJA (Notes 1, 3, 4) Steady State TC = 100°C TC = 25°C Power Dissipation RqJA (Notes 1, 3) Pulsed Drain Current Steady State PD W 55 27 ID A 20 TA = 100°C TA = 25°C PD A TJ, Tstg −55 to +175 °C IS 46 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 5.2 A) EAS 173 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. THERMAL RESISTANCE MAXIMUM RATINGS (Note 1) Parameter Symbol Value Unit Junction−to−Case − Steady State (Note 3) RqJC 2.7 °C/W Junction−to−Ambient − Steady State (Note 3) RqJA 47.4 1. The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted. 2. Psi (Y) is used as required per JESD51−12 for packages in which substantially less than 100% of the heat flows to single case surface. 3. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad. 4. Continuous DC current rating. Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle. © Semiconductor Components Industries, LLC, 2019 April, 2021 − Rev. 1 D (5 − 8) G (4) S (1, 2, 3) 1.6 371 Source Current (Body Diode) N−Channel W 3.2 IDM Operating Junction and Storage Temperature Range 85 A 14 TA = 100°C TA = 25°C, tp = 10 ms 6.9 mW @ 4.5 V ID MAX 59 TC = 100°C TA = 25°C 4.3 mW @ 10 V 40 V MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter RDS(on) MAX 1 LFPAK8 3.3x3.3 CASE 760AD MARKING DIAGRAM 004N 04CL AWLYW 004N04CL = Specific Device Code A = Assembly Location WL = Wafer Lot Y = Year W = Work Week (Note: Microdot may be in either location) ORDERING INFORMATION See detailed ordering, marking and shipping information in the package dimensions section on page 5 of this data sheet. Publication Order Number: NVTYS004N04CL/D NVTYS004N04CL ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted) Parameter Symbol Test Condition Min V(BR)DSS VGS = 0 V, ID = 250 mA 40 Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Zero Gate Voltage Drain Current IDSS Gate−to−Source Leakage Current VGS = 0 V, VDS = 40 V V TJ = 25°C 10 TJ = 125°C 250 100 mA IGSS VDS = 0 V, VGS = 20 V nA Gate Threshold Voltage VGS(TH) VGS = VDS, ID = 50 mA 2.0 V Drain−to−Source On Resistance RDS(on) VGS = 10 V, ID = 20 A 3.6 4.3 mW VGS = 4.5 V, ID = 20 A 5.6 6.9 gFS VDS = 5 V, ID = 40 A 90 S Input Capacitance Ciss 1600 pF Output Capacitance Coss VGS = 0 V, f = 1.0 MHz, VDS = 25 V Reverse Transfer Capacitance Crss 21 Total Gate Charge QG(TOT) 11.9 nC Threshold Gate Charge QG(TH) 2.4 nC Gate−to−Source Charge QGS Gate−to−Drain Charge QGD ON CHARACTERISTICS (Note 5) Forward Transconductance 1.2 CHARGES AND CAPACITANCES Total Gate Charge QG(TOT) VGS = 4.5 V, VDS = 32 V, ID = 40 A 590 4.7 4.2 VGS = 10 V, VDS = 32 V, ID = 40 A 25 nC 13 ns SWITCHING CHARACTERISTICS (Note 6) Turn−On Delay Time Rise Time Turn−Off Delay Time Fall Time td(on) tr td(off) VGS = 4.5 V, VDS = 32 V, ID = 40 A, RG = 1 W tf 6 17 6 DRAIN−SOURCE DIODE CHARACTERISTICS Forward Diode Voltage Reverse Recovery Time VSD TJ = 25°C 0.86 TJ = 125°C 0.75 tRR Charge Time ta Discharge Time tb Reverse Recovery Charge VGS = 0 V, IS = 40 A 30 VGS = 0 V, dlS/dt = 100 A/ms, IS = 40 A QRR 1.2 V ns 13 17 10 nC Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 2 NVTYS004N04CL TYPICAL CHARACTERISTICS 80 80 10 V to 3.6 V ID, DRAIN CURRENT (A) 3.2 V 60 50 40 2.8 V 30 20 60 50 40 30 10 0 0 0.5 1.0 1.5 2.0 2.5 3.0 TJ = 125°C 0 35 30 25 20 15 10 5 0 3 4 5 6 7 9 8 10 VGS, GATE−TO−SOURCE VOLTAGE (V) 10 5 TJ = 25°C 9 8 7 VGS = 4.5 V 6 5 VGS = 10 V 4 3 2 10 20 30 40 50 60 70 80 ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Voltage Figure 4. On−Resistance vs. Drain Current and Gate Voltage 100000 VGS = 10 V ID = 20 A TJ = 175°C 10000 IDSS, LEAKAGE (nA) RDS(on), NORMALIZED DRAIN−TO− SOURCE RESISTANCE 4 Figure 2. Transfer Characteristics 40 1.5 1.0 0.5 0 −50 3 Figure 1. On−Region Characteristics 45 2.0 TJ = −55°C 2 VGS, GATE−TO−SOURCE VOLTAGE (V) TJ = 25°C ID = 20 A 2.5 1 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 50 2 TJ = 25°C 20 10 0 VDS = 10 V 70 RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW) ID, DRAIN CURRENT (A) 70 TJ = 150°C 1000 TJ = 125°C 100 TJ = 85°C 10 TJ = 25°C 1 −25 0 25 50 75 100 125 150 175 0.1 5 10 15 20 25 30 35 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 3 40 NVTYS004N04CL TYPICAL CHARACTERISTICS VGS, GATE−TO−SOURCE VOLTAGE (V) C, CAPACITANCE (pF) 10000 CISS 1000 COSS 100 10 VGS = 0 V TJ = 25°C f = 1 MHz 0 5 CRSS 10 15 20 25 30 40 35 6 5 QGD QGS 4 3 VDS = 20 V ID = 40 A TJ = 25°C 2 1 0 0 5 20 15 10 Figure 7. Capacitance Variation Figure 8. Gate−to−Source Voltage vs. Total Charge 25 100 IS, SOURCE CURRENT (A) VGS = 0 V 100 t, TIME (ns) 8 7 QG, TOTAL GATE CHARGE (nC) tr td(off) td(on) 10 tf VGS = 4.5 V VDD = 20 V ID = 40 A 1 10 10 1 TJ = 25°C 0.1 0.01 0.001 100 TJ = −55°C TJ = 125°C 0.2 0 0.4 0.6 0.8 1.0 1.2 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current 100 1000 TJ(initial) = 25°C 100 10 10 ms IPEAK, (A) ID, DRAIN CURRENT (A) 9 VDS, DRAIN−TO−SOURCE VOLTAGE (V) 1000 1 10 10 1 0.1 TC = 25°C VGS ≤ 10 V Single Pulse RDS(on) Limit Thermal Limit Package Limit 0.1 1 10 0.5 ms 1 ms 10 ms 0.1 100 TJ(initial) = 150°C 1 1000 0.0001 0.001 VDS, DRAIN−TO−SOURCE VOLTAGE (V) TIME IN AVALANCHE (s) Figure 11. Safe Operating Area Figure 12. IPEAK vs. Time in Avalanche www.onsemi.com 4 0.01 NVTYS004N04CL TYPICAL CHARACTERISTICS 100 50% Duty Cycle R(t) (°C/W) 10 1 20% 10% 5% 2% 1% 0.1 Single Pulse 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 PULSE TIME (sec) Figure 13. Thermal Characteristics DEVICE ORDERING INFORMATION Device NVTYS004N04CLTWG Marking Package Shipping† 004N 04CL LFPAK33 (Pb−Free) 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NVTYS004N04CL PACKAGE DIMENSIONS LFPAK8 3.3x3.3, 0.65P CASE 760AD ISSUE A ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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