NXH006P120MNF2PTG

DATA SHEET www.onsemi.com Silicon Carbide (SiC) Module – EliteSiC, 6 mohm SiC M1 MOSFET, 1200 V, 2-PACK Half Bridge Topology, F2 Package NXH006P120MNF2PTG The NXH006P120MNF2 is a power module containing an 6 mW / 1200 V SiC MOSFET half−bridge and a thermistor in an F2 package. PACKAGE PICTURE PIM36 56.7x42.5 (PRESS FIT) CASE 180BY MARKING DIAGRAM Features • 6 mW / 1200 V SiC MOSFET Half−Bridge • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and • • without Pre−Applied TIM Options with Solderable Pins and Press−Fit Pins These Devices are Pb−Free, Halide Free and are RoHS Compliant Typical Applications • • • • NXH006P120MNF2PTG ATYYWW XXXXX = Specific Device Code AT = Assembly & Test Site Code YWW = Year and Work Week Code PIN CONNECTIONS Solar Inverter Uninterruptible Power Supplies Electric Vehicle Charging Stations Industrial Power See Pin Function Description for pin names ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. Figure 1. NXH006P120MNF2 Schematic Diagram © Semiconductor Components Industries, LLC, 2019 February, 2023 − Rev. 4 1 Publication Order Number: NXH006P120MNF2/D NXH006P120MNF2PTG PIN FUNCTION DESCRIPTION Pin Name 1 S1 Q1 Kelvin Emitter (High side switch) Description 2 G1 Q1 Gate (High side switch) 3 G1 Q1 Gate (High side switch) 4 S1 Q1 Kelvin Emitter (High side switch) 5 DC+ DC Positive Bus connection 6 DC+ DC Positive Bus connection 7 DC+ DC Positive Bus connection 8 DC+ DC Positive Bus connection 9 DC+ DC Positive Bus connection 10 DC+ DC Positive Bus connection 11 DC+ DC Positive Bus connection 12 DC+ DC Positive Bus connection 13 DC− DC Negative Bus connection 14 DC− DC Negative Bus connection 15 DC− DC Negative Bus connection 16 DC− DC Negative Bus connection 17 DC− DC Negative Bus connection 18 DC− DC Negative Bus connection 19 DC− DC Negative Bus connection 20 DC− DC Negative Bus connection 21 PHASE Center point of half bridge 22 PHASE Center point of half bridge 23 PHASE Center point of half bridge 24 PHASE Center point of half bridge 25 PHASE Center point of half bridge 26 S2 Q2 Kelvin Emitter (Low side switch) 27 G2 Q2 Gate (Low side switch) 28 TH1 Thermistor Connection 1 29 TH2 Thermistor Connection 2 30 S2 Q2 Kelvin Emitter (Low side switch) 31 G2 Q2 Gate (Low side switch) 32 PHASE Center point of half bridge 33 PHASE Center point of half bridge 34 PHASE Center point of half bridge 35 PHASE Center point of half bridge 36 PHASE Center point of half bridge www.onsemi.com 2 NXH006P120MNF2PTG MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 1200 V Gate−Source Voltage VGS +25/−15 V ID 304 A IDpulse 912 A Maximum Power Dissipation (TJ = 175°C) Ptot 950 W Short Circuit Withstand Time @ VGE = 15 V, VCE = 600 V, TJ v 150°C Tsc 2.0 ms Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 175 °C Storage Temperature Range Tstg −40 to 150 °C TIM Layer Thickness TTIM 160 ± 20 mm Vis 4800 VRMS Creepage distance 12.7 mm CTI 600 Substrate Ceramic Material HPS SiC MOSFET Continuous Drain Current @ Tc = 80°C (TJ = 175°C) Pulsed Drain Current (TJ = 175°C) (Note 2) THERMAL PROPERTIES INSULATION PROPERTIES Isolation test voltage, t = 1 sec, 60 Hz Substrate Ceramic Material Thickness Substrate Warpage (Note 3) W 0.38 mm Max 0.18 mm Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. 2. Calculated for 1 ms pulse, package limitation at 400 A. 3. Height difference between horizontal plane and substrate bottom copper. RECOMMENDED OPERATING RANGES Rating Symbol Min Max Unit TJ −40 175 °C Module Operating Junction Temperature Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. ELECTRICAL CHARACTERISTICS TJ = 25 °C unless otherwise noted Parameter Test Conditions Symbol Min Typ Max Unit V(BR)DSS 1200 − − V IDSS – − 300 mA RDS(ON) – 5.48 7.2 mW VGS = 20 V, ID = 200 A, TJ = 125°C − 6.52 − VGS = 20 V, ID = 200 A, TJ = 150°C – 7.28 – VGS(TH) 1.8 2.83 4.3 V IGSS –1000 − 1000 nA SiC MOSFET CHARACTERISTICS Drain−Source Breakdown Voltage VGS = 0 V, ID = 800 mA Zero Gate Voltage Drain Current VGS = 0 V, VDS = 1200 V Drain−Source On Resistance VGS = 20 V, ID = 200 A, TJ = 25°C Gate−Source Threshold Voltage VGS = VDS, ID = 80 mA Gate Leakage Current VGS = −10 V / 20 V, VDS = 0 V www.onsemi.com 3 NXH006P120MNF2PTG ELECTRICAL CHARACTERISTICS (continued) TJ = 25 °C unless otherwise noted Parameter Test Conditions Symbol Min Typ Max Unit CISS – 6687 – pF CRSS – 49 – SiC MOSFET CHARACTERISTICS VDS = 800 V, VGS = 0 V, f = 1 MHz Input Capacitance Reverse Transfer Capacitance Output Capacitance COSS – 1092 – QG(TOTAL) – 847 – nC Gate−Source Charge QGS – 231 – nC Gate−Drain Charge QGD – 195 – nC td(on) – 54 – ns tr – 21 – td(off) – 174 – tf – 22 – Turn−on Switching Loss per Pulse EON – 2.1 – Turn−off Switching Loss per Pulse EOFF – 2.75 – td(on) – 48 – tr – 19 – td(off) – 196 – tf – 22 – Turn−on Switching Loss per Pulse EON – 2.3 – Turn off Switching Loss per Pulse EOFF – 2.93 – VSD – 4.0 6 – 3.6 – VDS = 800 V, VGS = 20 V, ID = 200 A Total Gate Charge TJ = 25°C VDS= 600 V, ID = 200 A VGS = −5 V / 20 V, RG = 1.8 W Turn−on Delay Time Rise Time Turn−off Delay Time Fall Time TJ = 150°C VDS = 600 V, ID = 200 A VGS = −5 V / 20 V, RG = 1.8 W Turn−on Delay Time Rise Time Turn−off Delay Time Fall Time Diode Forward Voltage ID = 200 A, TJ = 25°C ID = 200 A, TJ = 150°C mJ ns mJ V Thermal Resistance − Chip−to−Case M1, M2 RthJC – 0.10 – °C/W Thermal Resistance − Chip−to−Heatsink Thermal grease, Thickness = 2 Mil +2%, A = 2.8 W/mK RthJH – 0.21 – °C/W R25 – 5 – kW THERMISTOR CHARACTERISTICS Nominal Resistance T = 25°C T = 100°C Deviation of R25 R100 – 457 – W DR/R −3 – 3 % PD – 50 – mW – 5 – mW/K Power Dissipation Power Dissipation Constant B−value B(25/50), tolerance ±3% – 3375 – K B−value B(25/100), tolerance ±3% – 3455 – K Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Orderable Part Number Marking Package Shipping NXH006P120MNF2PTG NXH006P120MNF2PTG F2HALFBR: Case 180BY Press−fit Pins with pre−applied thermal interface material (TIM) (Pb-Free / Halide Free) 20 Units / Blister Tray www.onsemi.com 4 NXH006P120MNF2PTG TYPICAL CHARACTERISTICS HALFBRIDGE MOSFET Figure 2. MOSFET Typical Output Characteristic at 1255C Figure 3. MOSFET Typical Output Characteristic Figure 4. MOSFET Typical Output Characteristic Figure 5. MOSFET Typical Transfer Characteristic Figure 6. Body Diode Forward Characteristic Figure 7. Gate−to−Source Voltage vs. Total Charge www.onsemi.com 5 NXH006P120MNF2PTG TYPICAL CHARACTERISTICS (25°C unless otherwise noted) Figure 8. Capacitance vs. Drain−to−Source Voltage Figure 9. Typical Switching Loss Eon vs. IC Figure 10. Typical Switching Loss Eon vs. Rg Figure 11. Typical Switching Loss Eoff vs. IC Figure 12. Typical Switching Loss Eoff vs. Rg Figure 13. Typical Switching Loss Tdon vs. IC www.onsemi.com 6 NXH006P120MNF2PTG TYPICAL CHARACTERISTICS (25°C unless otherwise noted) Figure 14. Typical Switching Loss Tdon vs. Rg Figure 15. Typical Switching Loss Tdoff vs. IC Figure 16. Typical Switching Loss Tdoff vs. Rg Figure 17. Typical Switching Loss Tr vs. IC Figure 18. Typical Switching Loss Tr vs. Rg Figure 19. Typical Switching Loss Tf vs. IC www.onsemi.com 7 NXH006P120MNF2PTG TYPICAL CHARACTERISTICS (25°C unless otherwise noted) Figure 20. Typical Switching Loss Tf vs. Rg Figure 21. MOSFET Junction−to−Case Transient Thermal Impedance www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PIM36 56.70x42.50x12.00 CASE 180BY ISSUE D DATE 24 NOV 2023 GENERIC MARKING DIAGRAM* XXXXXXXXXXXXXXXXXXXXXX ATYYWW FRONTSIDE MARKING 2D CODE BACKSIDE MARKING XXXXX = Specific Device Code AT = Assembly & Test Site Code YYWW = Year and Work Week Code DOCUMENT NUMBER: DESCRIPTION: *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. 98AON19725H PIM36 56.70x42.50x12.00 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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