NXH020F120MNF1PG

DATA SHEET www.onsemi.com Silicon Carbide (SiC) Module – EliteSiC, 20 mohm SiC M1 MOSFET, 1200 V, 4-PACK Full Bridge Topology, F1 Package PACKAGE PICTURE PIM22 33.8x42.5 (PRESS FIT) CASE 180BX NXH020F120MNF1PTG, NXH020F120MNF1PG MARKING DIAGRAM The NXH020F120MNF1 is a power module containing an 20 mW/1200 V SiC MOSFET full bridge and a thermistor in an F1 package. NXH020F120MNF1PTG/PG ATYYWW Features • 20 mW / 1200 V SiC MOSFET Half−Bridge • Thermistor • Options with Pre−Applied Thermal Interface Material (TIM) and XXXXX = Specific Device Code AT = Assembly & Test Site Code YWW = Year and Work Week Code without Pre−Applied TIM PIN CONNECTIONS • Press−Fit Pins • These Devices are Pb−Free, Halide Free and are RoHS Compliant Typical Applications • • • • Solar Inverter Uninterruptible Power Supplies Electric Vehicle Charging Stations Industrial Power 15 16 11 17 18 12 19 20 21 22 9 1 10 2 3 4 5 6 13 14 7 8 See Pin Function Description for pin names Figure 1. NXH020F120MNF1 Schematic Diagram ORDERING INFORMATION See detailed ordering and shipping information on page 4 of this data sheet. © Semiconductor Components Industries, LLC, 2021 September, 2023 − Rev. 0 1 Publication Order Number: NXH020F120MNF1/D NXH020F120MNF1PTG, NXH020F120MNF1PG PIN FUNCTION DESCRIPTION Pin Name Description 1 Phase 1 Center point of M1 and M2 2 Phase 1 Center point of M1 and M2 3 S2 M2 Kelvin Emitter (High side switch) 4 G2 M2 Gate (High side switch) 5 S4 M4 Kelvin Emitter (High side switch) 6 G4 M4 Gate (High side switch) 7 AC2 Center point of M3 and M4 8 AC2 Center point of M3 and M4 9 TH2 Thermistor Connection 2 10 TH1 Thermistor Connection 1 11 DC− DC Negative Bus connection 12 DC− DC Negative Bus connection 13 DC− DC Negative Bus connection 14 DC− DC Negative Bus connection 15 DC+ DC Positive Bus connection 16 DC+ DC Positive Bus connection 17 G1 M1 Gate (High side switch) 18 S1 M1 Kelvin Emitter (High side switch) 19 G3 M3 Gate (Low side switch) 20 S3 M3 Kelvin Emitter (High side switch) 21 DC+ DC Positive Bus connection 22 DC+ DC Positive Bus connection MAXIMUM RATINGS Rating Symbol Value Unit Drain−Source Voltage VDSS 1200 V Gate−Source Voltage VGS +25/−15 V ID 51 A IDpulse 102 A Ptot 211 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 175 °C Tstg −40 to 150 °C Vis 4800 VRMS 12.7 mm SiC MOSFET Continuous Drain Current @ TC = 80°C (TJ = 175°C) Pulsed Drain Current (TJ = 175°C) Maximum Power Dissipation @TC = 80°C (TJ = 175°C) THERMAL PROPERTIES Storage Temperature Range INSULATION PROPERTIES Isolation Test Voltage, t = 1 s, 60 Hz Creepage Distance Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. www.onsemi.com 2 NXH020F120MNF1PTG, NXH020F120MNF1PG RECOMMENDED OPERATING RANGES Rating Symbol Min Max Unit TJ −40 175 °C Module Operating Junction Temperature Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. ELECTRICAL CHARACTERISTICS TJ = 25 °C unless otherwise noted Test Conditions Symbol Min Typ Max Unit V(BR)DSS 1200 – – V IDSS – – 200 mA RDS(ON) – 20 30 mW VGS = 20 V, ID = 50 A, TJ = 125°C – 28 – VGS = 20 V, ID = 50 A, TJ = 150°C – 31 – VGS(TH) 1.8 2.81 4.3 V IGSS −500 – 500 nA pF Parameter SiC MOSFET CHARACTERISTICS Drain−Source Breakdown Voltage VGS = 0 V, ID = 400 mA Zero Gate Voltage Drain Current VGS = 0 V, VDS = 1200 V Drain−Source On Resistance VGS = 20 V, ID = 50 A, TJ = 25°C Gate−Source Threshold Voltage VGS = VDS, ID = 20 mA Gate Leakage Current VGS = −10 V/20 V, VDS = 0 V Input Capacitance VDS = 800 V, VGS = 0 V, f = 1 MHz CISS – 2420 – Reverse Transfer Capacitance CRSS – 19 – Output Capacitance COSS – 293 – QG(TOTAL) – 213.5 – nC Gate−Source Charge QGS – 60.0 – nC Gate−Drain Charge QGD – 61.2 – nC td(on) – 30.6 – ns Total Gate Charge Turn−on Delay Time Rise Time VDS = 800 V, VGS = 20 V, ID = 50 A TJ = 25°C, VDS = 600 V, ID = 50 A, VGS = −5 V/18 V, RG = 2.2 W tr – 8.7 – td(off) – 70.2 – tf – 3.8 – Turn−on Switching Loss per Pulse EON – 0.26 – Turn off Switching Loss per Pulse EOFF – 0.21 – td(on) – 29.7 – Turn−off Delay Time Fall Time Turn−on Delay Time Rise Time TJ = 150°C, VDS = 600 V, ID = 50 A, VGS = −5 V/18 V, RG = 2.2 W mJ ns tr – 8.1 – td(off) – 78.4 – tf – 6.4 – Turn−on Switching Loss per Pulse EON – 0.24 – Turn off Switching Loss per Pulse EOFF – 0.24 – VSD – 3.93 6 ID = 50 A, TJ = 125°C – 3.47 – ID = 50 A, TJ = 150°C – 3.39 – trr – 23.5 – ns Qrr – 1069 – nC Peak Reverse Recovery Current IRRM – 70 – A Peak Rate of Fall of Recovery Current di/dt – 6897 – A/ms Err – 592 – mJ Turn−off Delay Time Fall Time Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge ID = 50 A TJ = 25°C, VDS = 600 V, ID = 50 A, VGS = −5 V/18 V, RG = 2.2 W Reverse Recovery Energy www.onsemi.com 3 mJ V NXH020F120MNF1PTG, NXH020F120MNF1PG ELECTRICAL CHARACTERISTICS (continued) TJ = 25 °C unless otherwise noted Parameter Test Conditions Symbol Min Typ Max Unit trr – 28.0 – ns Qrr – 2000 – mC IRRM – 117 – A di/dt – 9137 – A/ms Err – 1163 – mJ SiC MOSFET CHARACTERISTICS TJ = 150°C, VDS = 600 V, ID = 50 A, VGS = −5 V/18 V, RG = 2.2 W Reverse Recovery Time Reverse Recovery Charge Peak Reverse Recovery Current Peak Rate of Fall of Recovery Current Reverse Recovery Energy Thermal Resistance − Chip−to−Case M1, M2, M3, M4 RthJC – 0.4495 – °C/W Thermal Resistance − Chip−to−Heatsink Thermal grease, Thickness = 2 Mil ±2%, A = 2.8 W/mK RthJH – 0.7971 – °C/W THERMISTOR CHARACTERISTICS Nominal Resistance TNTC = 25°C R25 – 5 – kW Nominal Resistance TNTC = 100°C R100 – 493 – W Nominal Resistance TNTC = 150°C R150 – 159.5 – W Deviation of R100 TNTC = 100°C DR/R −5 – 5 % Power Dissipation − Recommended Limit 0.15 mA, non−self−heating effect PD – 0.1 – mW Power Dissipation Constant − Absolute Maximum 5 mA PD – 34.2 – mW − – 1.4 – mW/K Power Dissipation Constant B−value B(25/50), tolerance ±2% − – 3375 – K B−value B(25/100), tolerance ±2% − – 3436 – K Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. ORDERING INFORMATION Orderable Part Number Marking Package Shipping NXH020F120MNF1PTG NXH020F120MNF1PTG F1−4PACK Press−fit Pins with pre*applied thermal interface material (TIM) (Pb−Free and Halide−Free) 28 Units / Blister Tray NXH020F120MNF1PG NXH020F120MNF1PG F1−4PACK Press−fit Pins (Pb−Free and Halide−Free) 28 Units / Blister Tray www.onsemi.com 4 NXH020F120MNF1PTG, NXH020F120MNF1PG TYPICAL CHARACTERISTICS (25°C UNLESS OTHERWISE NOTED) Figure 2. MOSFET Typical Output Characteristics Figure 3. MOSFET Typical Output Characteristics Figure 4. MOSFET Typical Output Characteristics Figure 5. MOSFET Typical Transfer Characteristics Figure 6. Body Diode Forward Characteristic Figure 7. Gate−to−Source Voltage vs. Total Charge www.onsemi.com 5 NXH020F120MNF1PTG, NXH020F120MNF1PG TYPICAL CHARACTERISTICS (CONTINUED) (25°C UNLESS OTHERWISE NOTED) Figure 8. Typical Switching Loss EON vs. IC Figure 9. Typical Switching Loss EON vs. RG Figure 10. Typical Switching Loss EOFF vs. IC Figure 11. Typical Switching Loss EOFF vs. RG Figure 12. Typical Turn−On Switching Tdon vs. IC Figure 13. Typical Turn−On Switching Tdon vs. RG www.onsemi.com 6 NXH020F120MNF1PTG, NXH020F120MNF1PG TYPICAL CHARACTERISTICS (CONTINUED) (25°C UNLESS OTHERWISE NOTED) Figure 14. Typical Turn−Off Switching Tdoff vs. IC Figure 15. Typical Turn−Off Switching Tdoff vs. RG Figure 16. Typical Turn−On Switching Tr vs. IC Figure 17. Typical Turn−On Switching Tr vs. RG Figure 18. Typical Turn−Off Switching Tf vs. IC Figure 19. Typical Turn−Off Switching Tf vs. RG www.onsemi.com 7 NXH020F120MNF1PTG, NXH020F120MNF1PG TYPICAL CHARACTERISTICS (CONTINUED) (25°C UNLESS OTHERWISE NOTED) Figure 20. Typical Reverse Recovery Energy vs. IC Figure 21. Typical Reverse Recovery Energy vs. RG Figure 22. Typical Reverse Recovery Time vs. IC Figure 23. Typical Reverse Recovery Time vs. RG Figure 24. Typical Reverse Recovery Charge vs. IC Figure 25. Typical Reverse Recovery Charge vs. RG www.onsemi.com 8 NXH020F120MNF1PTG, NXH020F120MNF1PG TYPICAL CHARACTERISTICS (CONTINUED) (25°C UNLESS OTHERWISE NOTED) Figure 26. Typical Reverse Recovery Current vs. IC Figure 27. Typical Reverse Recovery Current vs. RG Figure 28. Typical di/dt vs. IC Figure 29. Typical di/dt vs. RG www.onsemi.com 9 NXH020F120MNF1PTG, NXH020F120MNF1PG TYPICAL CHARACTERISTICS (CONTINUED) (25°C UNLESS OTHERWISE NOTED) Figure 30. Capacitance vs. Drain−to−Source Voltage Figure 31. MOSFET Junction−to−Case Transient Thermal Impedance www.onsemi.com 10 NXH020F120MNF1PTG, NXH020F120MNF1PG Table 1. FOSTER NETWORKS – M1, M2, M3, M4 M1, M3 M2, M4 Foster Element # Rth (K/W) Cth (Ws/K) Rth (K/W) Cth (Ws/K) 1 0.017325 0.008638 0.026614 0.005297 2 0.022329 0.043836 0.014274 0.064284 3 0.016565 0.107000 0.006208 0.315671 4 0.041616 0.125888 0.075096 0.078283 5 0.338223 0.099402 0.338851 0.124492 Table 2. CAUER NETWORKS – M1, M2, M3, M4 M1, M3 M2, M4 Cauer Element # Rth (K/W) Cth (Ws/K) Rth (K/W) Cth (Ws/K) 1 0.034247 0.006027 0.038327 0.004380 2 0.073342 0.018048 0.072292 0.025045 3 0.106345 0.041141 0.118744 0.030910 4 0.100786 0.040901 0.069379 0.066961 5 0.121340 0.076490 0.162299 0.074739 www.onsemi.com 11 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PIM22 33.8x42.5 (PRESS FIT) CASE 180BX ISSUE A XXXXXXXXXXXXXXXXXXXXXX ATYYWW G1 S1 G3 S3 T1 DC DC DC − − − DC + DC + DC + DC + AC 2 AC 2 S4 GENERIC MARKING DIAGRAM* G4 DC − T2 AC AC 1 1 DATE 20 AUG 2021 FRONTSIDE MARKING 2D CODE BACKSIDE MARKING XXXXX = Specific Device Code AT = Assembly & Test Site Code YYWW = Year and Work Week Code DOCUMENT NUMBER: DESCRIPTION: 98AON19724H *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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