NXH200B100H4F2SG

DATA SHEET www.onsemi.com F2 Boost Power Module NXH200B100H4F2SG, NXH200B100H4F2SG-R The NXH200B100H4F2SG is a power module containing high−performance IGBTs with rugged anti−parallel diodes. The module also contains an on−board thermistor. Features F2 PACKAGE CASE 180CJ SOLDER PINS • Extremely Efficient Trench with Field Stop Technology • Low Switching Loss Reduces System Power Dissipation • F2 Package with Solder Pins Typical Applications MARKING DIAGRAM • Solar Inverter • Uninterruptible Power Supplies D 41 32 ,33 IN +1 T 11 G 11 E 11 TP 1 E 21 TP 2 T 31 D21 E 22 XXXXX = Specific Device Code ZZZZ = Assembly Lot Code 26 ,27 BST 1 N D31 3 ,4 6 D 42 D12 14 D 52 11 ,12 22 ,23 E 32 G 32 19 T 32 13 D22 PIN CONNECTIONS DC −1 DC +2 21 NTC 1 18 NTC 2 BST 2 P 20 15 T 22 G 22 BST 1 P 5 T 12 E 12 DC +1 30 36 16 ,17 IN +2 G 12 1 ,2 28 ,29 E 31 G 31 31 35 T 21 G 21 D11 34 D 51 24 ,25 BST 2 N D32 7 8 9 ,10 DC −2 Figure 1. NXH200B100H4F2SG/NXH200B100H4F2SG−R Schematic Diagram ORDERING INFORMATION See detailed ordering and shipping information on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2020 May, 2023 − Rev. 4 1 Publication Order Number: NXH200B100H4F2/D NXH200B100H4F2SG, NXH200B100H4F2SG−R Table 1. ABSOLUTE MAXIMUM RATINGS (Note 1) TJ = 25°C unless otherwise noted Rating Symbol Value Unit Collector−Emitter Voltage VCES 1000 V Gate−Emitter Voltage VGE ±20 V IC 100 A ICpulse 300 A BOOST IGBT (T11, T21, T12, T22) Continuous Collector Current @ Th = 80°C Pulsed Collector Current Maximum Power Dissipation @ Th = 80°C Ptot 93 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 150 °C VRRM 1600 V BOOST IGBT INVERSE DIODE (D11, D21, D12, D22) Peak Repetitive Reverse Voltage Continuous Forward Current @ Th = 80°C IF 30 A Repetitive Peak Forward Current, Tpulse = 1 ms IFRM 90 A Power Dissipation Per Diode @ Th = 80°C Ptot 37 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 150 °C Collector−Emitter Voltage VCES 1000 V Gate−Emitter Voltage VGE ±20 V PATH IGBT (T31, T32) Continuous Collector Current @ Th = 80°C IC 100 A ICpulse 300 A Maximum Power Dissipation @ Th = 80°C Ptot 109 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 150 °C VRRM 1200 V Pulsed Collector Current PATH IGBT INVERSE DIODE (D31, D32) Peak Repetitive Reverse Voltage Continuous Forward Current @ Th = 80°C IF 40 A Repetitive Peak Forward Current IFRM 120 A Power Dissipation Per Diode @ Th = 80°C Ptot 78 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 150 °C VRRM 1200 V IF 40 A Repetitive Peak Forward Current, Tpulse = 1 ms IFRM 120 A Maximum Power Dissipation @ Th = 80°C Ptot 72 W Minimum Operating Junction Temperature TJMIN −40 °C Maximum Operating Junction Temperature TJMAX 150 °C Tstg −40 to 125 °C 3000 VRMS >12.7 mm BOOST DIODE (D41, D51, D42, D52) Peak Repetitive Reverse Voltage Continuous Forward Current @ Th = 80°C THERMAL PROPERTIES Storage Temperature range INSULATION PROPERTIES Isolation test voltage, t = 1 sec, 50 Hz Vis Creepage distance (pin to heatsink) Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Refer to ELECTRICAL CHARACTERISTICS, RECOMMENDED OPERATING RANGES and/or APPLICATION INFORMATION for Safe Operating parameters. www.onsemi.com 2 NXH200B100H4F2SG, NXH200B100H4F2SG−R Table 2. RECOMMENDED OPERATING RANGES Rating Module Operating Junction Temperature Symbol Min Max Unit TJ −40 150 °C Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended Operating Ranges limits may affect device reliability. Table 3. ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted Parameter Test Conditions Symbol Min Typ Max Unit VGE = 0 V, VCE = 1000 V ICES VGE = 15 V, IC = 100 A, TJ = 25°C VCE(sat) – – 200 mA – 1.8 2.4 V – 2.1 – BOOST IGBT CHARACTERISTICS (T11, T21, T12, T22) Collector−Emitter Cutoff Current Collector−Emitter Saturation Voltage VGE = 15 V, IC = 100 A, TJ = 150°C Gate−Emitter Threshold Voltage VGE = VCE, IC = 100 mA VGE(TH) 3.9 5 6.3 V VGE = 20 V, VCE = 0 V IGES – − 800 nA TJ = 25°C VCE = 600 V, IC = 30 A VGE = −5 V ~ 15 V, RG = 10 W Eon – 0.57 – mJ Eoff – 0.96 – TJ = 125°C VCE = 600 V, IC = 30 A VGE = −5 V ~ 15 V, RG = 10 W Eon – 0.70 – Eoff – 1.60 – VCE = 20 V, VGE = 0 V, f = 1 MHz Cies – 6523 – Output Capacitance Coes – 253 – Reverse Transfer Capacitance Cres – 26 – Qg – 326 – nC RthJC – 0.42 – °C/W RthJH – 0.75 – °C/W VF – 1 1.6 V – 0.94 – RthJC – 0.77 – °C/W Thermal grease, Thickness ≈ 57 mm, l = 2.87 W/mK RthJH – 1.19 – °C/W VGE = 0 V, VCE = 1000 V ICES – – 200 mA VGE = 15 V, IC = 100 A, TJ = 25°C VCE(sat) – 1.26 2.1 V – 1.34 – Gate Leakage Current Turn−on Switching Loss per Pulse Turn−off Switching Loss per Pulse Turn−on Switching Loss per Pulse Turn−off Switching Loss per Pulse Input Capacitance Total Gate Charge VCE = 600 V, IC = 100 A, VGE = ±15 V Thermal Resistance − chip−to−case Thermal Resistance − chip−to−heatsink Thermal grease, Thickness ≈ 57 mm, l = 2.87 W/mK mJ pF BOOST IGBT INVERSE DIODE CHARACTERISTICS (D11, D21, D12, D22) Diode Forward Voltage IF = 30 A, TJ = 25°C IF = 30 A, TJ = 150°C Thermal Resistance − chip−to−case Thermal Resistance − chip−to−heatsink PATH IGBT CHARACTERISTICS (T31, T32) Collector−Emitter Cutoff Current Collector−Emitter Saturation Voltage VGE = 15 V, IC = 100 A, TJ = 150°C Gate−Emitter Threshold Voltage VGE = VCE, IC = 100 mA VGE(TH) 3.2 4.6 5.5 V VGE = 20 V, VCE = 0 V IGES – − 800 nA VCE = 20 V, VGE = 0 V, f = 1 MHz Cies – 20937 – pF Output Capacitance Coes – 341 – Reverse Transfer Capacitance Cres – 158 – Qg – 1746 – nC RthJC – 0.33 – °C/W RthJH – 0.64 – °C/W Gate Leakage Current Input Capacitance Total Gate Charge VCE = 600 V, IC = 100 A, VGE = 15 V Thermal Resistance − chip−to−case Thermal Resistance − chip−to−heatsink Thermal grease, Thickness ≈ 57 mm, l = 2.87 W/mK www.onsemi.com 3 NXH200B100H4F2SG, NXH200B100H4F2SG−R Table 3. ELECTRICAL CHARACTERISTICS TJ = 25°C unless otherwise noted Parameter Test Conditions Symbol Min Typ Max Unit VF – 2.3 3 V – 1.6 – RthJC – 0.6 – °C/W RthJH – 0.9 – °C/W VR = 1200 V, TJ = 25°C IR – − 400 mA IF = 40 A, TJ = 25°C VF – 1.5 2 V − 2.0 − PATH IGBT INVERSE DIODE CHARACTERISTICS (D31, D32) Diode Forward Voltage IF = 40 A, TJ = 25°C IF = 40 A, TJ = 150°C Thermal Resistance − chip−to−case Thermal Resistance − chip−to−heatsink Thermal grease, Thickness ≈ 57 mm, l = 2.87 W/mK BOOST DIODE CHARACTERISTICS (D41, D51, D42, D52) Diode Reverse Leakage Current Diode Forward Voltage IF = 40 A, TJ = 150°C Peak Reverse Recovery Current Reverse Recovery Energy Peak Reverse Recovery Current Reverse Recovery Energy TJ = 25°C VCE = 600 V, IC = 30 A VGE = −5 V ~ 15V, RG = 10 W IRRM – 10 – A Err – 66 – mJ TJ = 125°C VCE = 600 V, IC = 30 A VGE = −5 V ~ 15V, RG = 10 W IRRM – 9.9 – A Err – 64 – mJ RthJC – 0.59 – °C/W RthJH – 0.97 – °C/W Thermal Resistance − chip−to−case Thermal Resistance − chip−to−heatsink Thermal grease, Thickness ≈ 57 mm, l = 2.87 W/mK Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. Table 4. THERMISTOR CHARACTERISTICS Parameter Test Conditions Nominal resistance Nominal resistance T = 100°C Symbol Min Typ Max Unit R25 − 22 − kW R100 − 1486 − W Deviation of R25 −R/R −5 − 5 % Power dissipation PD − 200 − mW − 2 − mW/K Power dissipation constant B−value B(25/50), tolerance ±3% − 3950 − K B−value B(25/100), tolerance ±3% − 3998 − K Table 5. ORDERING INFORMATION Orderable Part Number NXH200B100H4F2SG, NXH200B100H4F2SG−R Marking Package Shipping NXH200B100H4F2SG, NXH200B100H4F2SG−R F2 − Case 180CJ (Pb−Free and Halide−Free, Solder Pins) 20 Units / Blister Tray www.onsemi.com 4 NXH200B100H4F2SG, NXH200B100H4F2SG−R TYPICAL CHARACTERISTICS – BOOST IGBT & INVERSE DIODE Figure 2. Typical Output Characteristics Figure 3. Typical Output Characteristics 300 90 25oC 25oC 25C IF , F O R W A R D C U R R E N T (A ) IC , C O L L E C T O R C U R R E N T (A ) 150oC 150oC 200 100 150C 60 30 0 0 0.0 0 1 2 3 4 5 6 7 0.2 8 0.4 0.6 0.8 1.0 1.2 1.4 VF, FORWARD VOLTAGE (V) VGE, GATE−EMITTER VOLTAGE (V) Figure 4. Typical Transfer Characteristics Figure 5. Inverse Diode Forward Characteristics Duty cycle peak response [degC/W] 1 0.1 single pulse @1% duty cycle @2% duty cycle 0.01 @5% duty cycle @10% duty cycle @20% duty cycle @50% duty cycle 0.001 0.00001 0.0001 0.001 0.01 pulse on �me [s] Figure 6. Boost IGBT Transient Thermal Impedance www.onsemi.com 5 0.1 1 NXH200B100H4F2SG, NXH200B100H4F2SG−R TYPICAL CHARACTERISTICS – BOOST IGBT & INVERSE DIODE Duty cycle peak response [degC/W] 1 0.1 single pulse @1% duty cycle @2% duty cycle 0.01 @5% duty cycle @10% duty cycle @20% duty cycle @50% duty cycle 0.001 0.00001 0.0001 0.001 0.01 0.1 pulse on �me [s] Figure 7. Inverse Diode Transient Thermal Impedance Figure 8. Boost IGBT FBSOA Figure 9. Boost IGBT Gate Voltage vs. Gate Charge Figure 10. Boost IGBT Capacitance www.onsemi.com 6 1 NXH200B100H4F2SG, NXH200B100H4F2SG−R TYPICAL CHARACTERISTICS – PATH IGBT & INVERSE DIODE Figure 11. Typical Output Characteristics Figure 12. Typical Output Characteristics Figure 13. Typical Transfer Characteristics Figure 14. Inverse Diode Forward Characteristics Duty cycle peak response [degC/W] 1 0.1 single pulse @1% duty cycle @2% duty cycle 0.01 @5% duty cycle @10% duty cycle @20% duty cycle @50% duty cycle 0.001 0.00001 0.0001 0.001 0.01 pulse on �me [s] Figure 15. Path IGBT Transient Thermal Impedance www.onsemi.com 7 0.1 1 NXH200B100H4F2SG, NXH200B100H4F2SG−R TYPICAL CHARACTERISTICS – PATH IGBT & INVERSE DIODE Duty cycle peak response [degC/W] 1 0.1 single pulse @1% duty cycle @2% duty cycle 0.01 @5% duty cycle @10% duty cycle @20% duty cycle @50% duty cycle 0.001 0.00001 0.0001 0.001 0.01 0.1 pulse on �me [s] Figure 16. Inverse Diode Transient Thermal Impedance Figure 17. Path IGBT FBSOA Figure 18. Path IGBT Gate Voltage vs. Gate Charge Figure 19. Path IGBT Capacitance www.onsemi.com 8 1 NXH200B100H4F2SG, NXH200B100H4F2SG−R TYPICAL CHARACTERISTICS – BOOST DIODE IF , F O R W A R D C U R R E N T (A ) 100 25C 80 150C 60 40 20 0 0 0.5 1 1.5 2 2.5 3 3.5 4 VF, FORWARD VOLTAGE (V) Figure 20. Typical Forward Characteristics Duty cycle peak response [degC/W] 1 0.1 single pulse @1% duty cycle @2% duty cycle 0.01 @5% duty cycle @10% duty cycle @20% duty cycle @50% duty cycle 0.001 0.00001 0.0001 0.001 0.01 pulse on �me [s] Figure 21. Junction−to−Case Transient Thermal Impedance www.onsemi.com 9 0.1 1 NXH200B100H4F2SG, NXH200B100H4F2SG−R TYPICAL CHARACTERISTICS – BOOST IGBT COMMUTATE BOOST DIODE Figure 22. Typical Turn On Loss vs. IC Figure 23. Typical Turn On Loss vs. RG Figure 24. Typical Turn Off Loss vs. IC Figure 25. Typical Turn Off Loss vs. RG Figure 26. Typical Reverse Recovery Loss vs. IC Figure 27. Typical Reverse Recovery Loss vs. RG www.onsemi.com 10 NXH200B100H4F2SG, NXH200B100H4F2SG−R Figure 28. Typical Reverse Recovery Current vs. IC Figure 29. Typical Reverse Recovery Current vs. RG TYPICAL CHARACTERISTICS – THERMISTOR Figure 30. Thermistor Characteristics www.onsemi.com 11 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS PIM36 56.7x42.5 (SOLDER PIN) CASE 180CJ ISSUE C DATE 18 MAY 2023 GENERIC MARKING DIAGRAM* XXXXXXXXXXXXXXXXXXXXXXX XXXXXXXXXXXXXXX ZZZZZZZZZZZ ATYYWW FRONTSIDE MARKING 2D CODE BACKSIDE MARKING XXXXX = Specific Device Code ZZZZ = Assembly Lot Code AT = Assembly & Test Site Code YYWW = Year and Work Week Code DOCUMENT NUMBER: DESCRIPTION: 98AON22702H *This information is generic. Please refer to device data sheet for actual part marking. Pb−Free indicator, “G” or microdot “ G”, may or may not be present. Some products may not follow the Generic Marking. Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red. 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